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Semiconductor nanostructures with wide bandgap
Free-Standing ZnSe-Based Microdisk Resonators: Influence of Edge Roughness on the Optical Quality and Reducing Degradation with Supported Geometry W. Seemann, A. Kothe, C. Tessarek, G. Schmidt, S. Qiao, N. von den Driesch, J. Wiersig, A. Pawlis, G. Callsen and J. Gutowski |
Spatially resolved Luminescence Properties of Non- and Semi-Polar InGaN Quantum Wells on GaN Microrods J. Dühn, C. Tessarek, M. Schowalter, T. Coenen, B. Gerken, K. Müller-Caspary, T. Mehrtens, M. Heilmann, S. Christiansen, A. Rosenauer, J. Gutowski, and K. Sebald |
Tunable Bragg polaritons and nonlinear emission from a hybrid metal-unfolded ZnSe-based microcavity SK. Shaid-Ur Rahman, T. Klein, J. Gutowski, S. Klembt, and K.Sebald |
The influence of the quantum-confined Stark effect on InGaN/AlGaN quantum dots E. Zakizade, S. Figge, C. Laurus, T. Mehrtens, A. Rosenauer, D. Hommel, J. Gutowski, and K. Sebald |
Observation of a hybrid state of Tamm plasmons and microcavity exciton polaritons SK. Shaid-Ur Rahman, T. Klein, J. Gutowski, S. Klembt, D. Hommel, and K.Sebald |
Bragg polaritons in a ZnSe-based unfolded microcavity at elevated temperatures K. Sebald, SK. S. Rahman, M. Cornelius, T. Kaya, J. Gutowski, T. Klein, A. Gust, D. Hommel, and S. Klembt |
Tamm plasmon polaritons in the visible spectral region and its optical properties in ZnSe-based microcavities S.K. S. Rahman, K. Sebald, J. Gutowski, T. Klein, S. Klembt, C. Kruse, D. Hommel |
Tailoring the optical properties of wide-bandgap based microcavities via metal films K. Sebald, SK. S. Rahman, M. Cornelius, J. Gutowski, T. Klein, S. Klembt, C. Kruse and D. Hommel |
Photonic crystal structures based on GaN ultrathin membranes O. Volciuc, V. Sergentu, I. Tiginyanu, M. Schowalter, V. Ursaki, A. Rosenauer, D. Hommel, and J. Gutowski Journal of Nanoelectronics and Optoelectronics 9, 271 (2014) |
Influence of a low-temperature capping on the crystalline structure and morphology of InGaN quantum dot structures B. Krause, B. Miljevic, T. Aschenbrenner, E. Piskorska-Hommel, C. Tessarek, M. Barchuk, G. Buth, R. Donfeu Tchana, S. Figge, J. Gutowski, D. Hänschke, J. Kalden, T. Laurus, S. Lazarev, R. Magalhaes-Paniago, K. Sebald, A. Wolska, D. Hommel, J. Falta, V. Holý, and T. Baumbach |
The impact of nanoperforation on persistent photoconductivity and optical quenching effects in suspended GaN nanomembranes O. Volciuc, T. Braniste, I. M. Tiginyanu, M. A. Stevens-Kalceff, J. Ebeling, T. Aschenbrenner, D. Hommel, V. Ursaki and J. Gutowski |
The impact of the discreteness of low-fluence ion beam processing on the spatial architecture of GaN nanostructures fabricated by surface charge lithography I. M. Tiginyanu,O. Volciuc,M. A. Stevens-Kalceff, V. Popa, J. Gutowski, S. Wille, R. Adelung, and H. Föll Surface Engineering and Applied Electrochemistry 49, 1 (2013) |
Blue lasing and strong coupling in ZnSe monolithic microcavities K. Sebald, M. Seyfried, S. Klembt, C. Kruse, T. Aschenbrenner, D. Hommel, S. Bley, A. Rosenauer, and J. Gutowski |
Strong coupling in monolithic microcavities with ZnSe quantum wells K. Sebald, M. Seyfried, S. Klembt, S. Bley, A. Rosenauer, D. Hommel, and C. Kruse |
Blue monolithic II-VI-based vertical-cavity surface-emitting laser S. Klembt, M. Seyfried, T. Aschenbrenner, K. Sebald, J. Gutowski, D. Hommel, and C. Kruse |
Optical properties of single InGaN quantum dots and their devices K. Sebald, J. Kalden, H. Lohmeyer, and J. Gutowski |
Microphotoluminescence studies on GaN-based airpost pillar microcavities containing InGaN quantum wells and quantum dots K. Sebald, H. Lohmeyer, J. Kalden, M. Seyfried, S. Figge, C. Kruse, H. Dartsch, C. Tessarek, D. Hommel, and J. Gutowski |
Composition mapping in InGaN by scanning transmission electron microscopy A. Rosenauer, T. Mehrtens, K. Müller, K. Gries, M. Schowalter, P. V. Satyam, S. Bley, C. Tessarek, D. Hommel, K. Sebald, M. Seyfried, J. Gutowski, A. Avramescu, K. Engl, and S. Lutgen |
Strong phase separation of strained InxGa1−xN layers due to spinodal and binodal decomposition: Formation of stable quantum dots C. Tessarek, S. Figge, T. Aschenbrenner, S. Bley, A. Rosenauer, M. Seyfried, J. Kalden, K. Sebald, J. Gutowski, and D. Hommel |
Light-emitting diode based on mask- and catalyst-free grown N-polar GaN nanorods G. Kunert, W. Freund, T. Aschenbrenner, C. Kruse, S. Figge, M.Schowalter, A. Rosenauer, J. Kalden, K. Sebald, J. Gutowski, M .Feneberg, I. Tischer, K. Fujan, K. Thonke, and D Hommel |
Optical properties of InGaN quantum dots in monolithic pillar microcavities K. Sebald, M. Seyfried, J. Kalden, J. Gutowski, H. Dartsch, C. Tessarek, T. Aschenbrenner, S. Figge, C. Kruse, D. Hommel, M. Florian, and F. Jahnke |
Optical polariton properties in ZnSe-based planar and pillar structured microcavities K. Sebald, A. Trichet, M. Richard, L. S. Dang, M. Seyfried, S. Klembt, C. Kruse and D. Hommel |
Optical properties of photonic molecules and elliptical pillars made of ZnSe-based microcavities K. Sebald, M. Seyfried, S. Klmebt, and C. Kruse |
Electroluminescence from isolated single indium gallium nitride quantum dot up to 150 K J. Kalden, C. Tessarek, K. Sebald, S. Figge, C. Kruse, D. Hommel, and J. Gutowski Phys. Status Solidi A 207, 6, 1428 (2010) 8th International Conference on Nitride Semiconductors – ICNS 8 October 18-23, 2009 in Jeju, South Korea |
Electroluminescence from a single InGaN quantum dot in the green spectral region up to 150 K J. Kalden, C. Tessarek, K. Sebald, S. Figge, C. Kruse, D. Hommel, and J. Gutowski |
Highly ordered catalyst- and mask-free GaN nanorods on r-plane sapphire T. Aschenbrenner, C. Kruse, G. Kunert, S. Figge, K. Sebald, J. Kalden, T. Voss, J. Gutowski and D. Hommel |
Optical properties and modal gain of InGaN quantum dot stacks J. Kalden, K. Sebald, J. Gutowski, C. Tessarek, T. Aschenbrenner, S. Figge, and D. Hommel International Workshop on Nitride Semiconductors |
Optical properties of GaN nanorods grown catalyst-free on r-plane sapphire K. Sebald, J. Kalden, T. Voss, J. Gutowski, T. Aschenbrenner, G. Kunert, C. Kruse, S. Figge, and D. Hommel International Workshop on Nitride Semiconductors |
Influence of piezoelectric fields on excitonic complexes in InGaN quantum dots K. Sebald, J. Kalden, S. Herlufsen, H. Lohmeyer, C. Tessarek, T. Yamaguchi, S. Figge, D. Hommel, J. Gutowski |
Properties and prospects of blue-green emitting II-VI-based monolithic microcavities K. Sebald, C. Kruse, and J. Wiersig |
A CdSe quantum dot based resonant cavity light-emitting diode showing single line emission up to 90 K A. Gust, C. Kruse, K. Otte, D. Hommel, J. Kalden, T. Meeser, K. Sebald, J. Gutowski, and D. Hommel |
Optical Properties of Single and Multi-Layer InGaN Quantum Dots K. Sebald, H. Lohmeyer, S. Herlufsen, J. Kalden, J. Gutowski, C. Tessarek, T. Yamaguchi, and D. Hommel 7th International Conference of Nitride Semiconductors |
Integration of InGaN quantum dots into nitride-based microcavities C. Kruse, S. Figge, H. Dartsch, C. Tessarek, D. Hommel, H. Lohmeyer, J. Kalden, K. Sebald, and J. Gutowski 7th International Conference of Nitride Semiconductors |
Wide-bandgap quantum dot based microcavity VCSEL structures K. Sebald, H. Lohmeyer, J. Gutowski, C. Kruse, R. Kröger, T. Yamaguchi, A. Gust, D. Hommel, J. Wiersig, and F. Jahnke |
Green Laser emission from monolithic II-VI-based pillar microcavities near room temperature C. Kruse, H. Lohmeyer, K. Sebald, J. Gutowski, D. Hommel, J. Wiersig, and F. Jahnke |
Fine tuning of quantum-dot pillar microcavities by focused ion beam milling H. Lohmeyer, J. Kalden, K. Sebald, C. Kruse, D. Hommel, and J. Gutowski |
On the way to InGaN quantum dots embedded into monolithic nitride cavities K. Sebald, H. Lohmeyer, J. Gutowski, T. Yamaguchi, C. Kruse, D. Hommel, J. Wiersig, and F. Jahnke Int. Workshop on Nitride Semiconductors, Kyoto, Japan, 2006 |
Enhanced spontaneous emission of CdSe/ZnSe quantum dots in monolithic II-VI pillar microcavities H. Lohmeyer, K. Sebald, C. Kruse, D. Hommel, and J. Gutowski 28th Int. Conference on the Physics of Semiconductors, Vienna, Austria, 2006 |
Optical Properties of Single InGaN Quantum Dots up to 150 K K. Sebald, H. Lohmeyer, J. Gutowski, T. Yamaguchi, and D. Hommel 4th Int. Conference on Quantum Dots, Chamonix-Mont Blanc, France, 2006 |
A novel approach for the growth of InGaN quantum dots T. Yamaguchi, K. Sebald, H. Lohmeyer, S. Gangopahyay, J. Falta, J. Gutowski, S. Figge, and D. Hommel 4th Int. Conference on Quantum Dots, Chamonix-Mont Blanc, France, 2006 |
The State of Strain in Single GaN Nanocolumns As Derived from Micro-Photoluminescence Measurements N. Thillosen, K. Sebald, H. Hardtdegen, R. Meijers, R. Calarco, S. Montanari, N. Kaluza, J. Gutowski, and H. Lüth |
Enhanced spontaneous emission of CdSe quantum dots in monolithic II-VI pillar microcavities H. Lohmeyer, C. Kruse, K. Sebald, J. Gutowski, and D. Hommel |
Efficient Coupling into Confined Optical Modes of ZnSe-based Pillar Microcavities H. Lohmeyer, K. Sebald, J. Gutowski, C. Kruse, D. Hommel, J. Wiersig, N. Baer, and F. Jahnke 12th International Conference on II-VI Compounds, Warsaw, 2005 |
Growth and characterization of self-assembled CdSe quantum dots in MgS barriers A. Gust, C. Kruse, K. Sebald, H. Lohmeyer, J. Gutowski, and D. Hommel 12th International Conference on II-VI Compounds, Warsaw, 2005 |
Confined optical modes in monolithic II-VI pillar microcavities H. Lohmeyer, K. Sebald, C. Kruse, R. Kröger, J. Wiersig, N. Baer, F. Jahnke, J. Gutowski, and D. Hommel |
Coherent control of the exciton and exciton-biexciton transitions in a semiconductor quantum well studied in nonlinear wave-mixing signals T. Voss, I. Rückmann, J. Gutowski, V. M. Axt, and T. Kuhn |
| Coherent control of exciton-biexciton beats: direction selectivity of four-wave-mixing signals in experiment and microscopic theory T. Voss, I. Rückmann, J. Gutowski, V. M. Axt, and T. Kuhn 8th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors phys. stat. sol. (b) 243,10, 2410 (2006) |
Coherent Control of Excitonic Excitations in II-VI Quantum Wells T. Voss, H. G. Breunig, I. Rückmann, and J. Gutowski (invited) 12th International Conference on II-VI Compounds, Warsaw (2005) |
CdSe quantum dots coupled to modes of monolithic II-VI pillar microcavities: tunability and Purcell effect H. Lohmeyer, C. Kruse, K. Sebald, J. Gutowski, and D. Hommel 4th Int. Conference on Quantum Dots, Chamonix-Mont Blanc, France, 2006 |
Optical coherent manipulation of polariton modes and of their radiative decay I. Kudyk, T. Voss, I. Rückmann, J. Gutowski, S. Schumacher, and F. Jahnke |
Comparative investigation of quantum-dot-like localization centers in InGaN quantum well and quantum dot structures K. Sebald, H. Lohmeyer, J. Gutowski, T. Yamaguchi, and D. Hommel MRS Fall Meeting 2005, Boston (USA) |
Epitaxial Growth of InGaN Quantum Dots Grown by MOVPE: Effect of Capping Process on Structural and Optical Properties T. Yamaguchi, K. Sebald, J. Gutowski, S. Figge, and D. Hommel MRS Fall Meeting 2005, Boston (USA) |
Micro-photoluminescence studies of InGaN/GaN quantum dots up to 150 K K. Sebald, H. Lohmeyer, J. Gutowski, T. Yamaguchi, and D. Hommel 6th International Conference on the Physics of Nitride Semiconductors, Bremen (2005) |
Crack-free monolithic nitride vertical-cavity surface-emitting laser structures and pillar microcavities H. Lohmeyer, K. Sebald, C. Kruse, R. Kröger, J. Gutowski, D. Hommel, J. Wiersig, and F. Jahnke 6th International Conference on the Physics of Nitride Semiconductors, Bremen (2005) |
Microphotoluminescence studies of excitonic and multiexcitonic states of quantum dot-like localization centers in InGaN/GaN structures K. Sebald, H. Lohmeyer, J. Gutowski, S. Einfeldt, C. Roder, and D. Hommel MRS Fall Meeting 2004, Boston (USA) |
ZnSe-based laser diodes: New approaches A. Gust, C. Kruse, M. Klude, E. Roventa, R. Kröger, K. Sebald, H. Lohmeyer, B. Brendemühl, J. Gutowski, and D. Hommel (invited) E-MRS Fall Meeting, Warsaw (Poland) 2004 |
Resonant modes in monolithic nitride pillar microcavities H. Lohmeyer, K. Sebald, J. Gutowski, R. Kröger, C. Kruse, D. Hommel, J. Wiersig, and F. Jahnke |
Room-temperature operation of a green monolithic II-VI vertical-cavity surface-emitting laser C. Kruse, K. Sebald, H. Lohmeyer, B. Brendemühl, R. Kröger, J. Gutowski,and D. Hommel 27th International Conference on the Physics of Semiconductors, Flagstaff (USA) 2004 |
Coherent Propagation of Polaritons in Semiconductor Heterostructures: Nonlinear Pulse Transmission in Theory an Experiment S. Schumacher, G. Czycholl, F. Jahnke, I. Kudyk, L. Wischmeier, T. Voss, I. Rückmann, J. Gutowski, A. Gust, and D. Hommel |
Microphotoluminescence of strongly localized states in InGaN/GaN layers - emission of quantum dots? H. Lohmeyer, K. Sebald, J. Gutowski, S. Einfeldt, and D. Hommel Int. Workshop on Nitride Semiconductors, Pittsburgh (USA) 2004 |
Green Monolithic II-VI Vertical Cavity Surface Emitting Laser Operating at Room Temperature C. Kruse, S. M. Ulrich, G. Alexe, E. Roventa, R. Kröger, B. Brendemühl, P. Michler, J. Gutowski, D. Hommel (invited) 11th International Conference II-VI Compounds, Niagara Falls (USA) 2003 |
Polariton propagation in shallow-confinement heterostructures: Microscopic theory and experiment showing the breakdown of the dead-layer concept S. Schumacher, G. Czycholl, F. Jahnke, I. Kudyk, H. I. Rückmann, J. Gutowski, A. Gust, G. Alexe, and D. Hommel |
Light-polarization and intensity dependence of higher-order nonlinearities in excitonic FWM signals M. Buck, L. Wischmeier, S. Schumacher, G. Czycholl, F. Jahnke, T. Voss, I. Rückmann, and J. Gutowski |
Estimating the Memory Time Induced by Eciton-Exciton Scattering V. M. Axt, T. Kuhn, B. Haase, U. Neukirch, and J.Gutowski |
Dynamics of Excitons and Exciton Complexes in Wide-Gap Semiconductors Jürgen Gutowski, Hans-Georg Breunig, and Tobias Voss (invited) |
Excitation-induced dephasing and biexcitonic effects in the coherent control of excitonic polarization in pulse-transmission experiments T. Voss, H. G. Breunig, I. Rückmann, and J. Gutowski |
Real-Time Observation of the Coherent Control of Linear and Four-Wave-Mixing Polarization of Excitons in a ZnSe Single Quantum Well T. Voss, H. G. Breunig, I. Rückmann, and J. Gutowski 13th Int. Conf. Nonequilibrium Carrier Dynamics in Semiconductors (HCIS 13), Modena (Italy) 2003 |
Influence of the Carrier Density on the Optical Gain and Refractive Index Change in InGaN Laser Structures M. Röwe, P. Michler, J. Gutowski, V. Kümmler, A. Lell, and V. Härle 5th Int. Conf. Nitride Semiconductors, Nara (Japan) 2003 |
Influence of the Growth Kinetics on the Indium Distribution during MOVPE Growth of InGaN Quantum Wells E. Hahn, A. Rosenauer, D. Gerthsen, J. Off, F. Scholz, M. Vehse, and J. Gutowski 5th Int. Conf. Nitride Semiconductors, Nara (Japan) 2003 |
Optical gain, gain saturation, and waveguiding in group III-nitride heterostructures M. Röwe, M. Vehse, P. Michler, J. Gutowski, S. Heppel, and A. Hangleiter |
Single-photon and photon-pair emission from CdSe/Zn(S,Se) quantum dots S. Strauf, S. Ulrich, K. Sebald, P. Michler, T. Passow, D. Hommel, G. Bacher, and A. Forchel |
11th International Conference on II-VI Compounds (II-VI 2003), Niagara Falls, USA, 22-26 September 2003 J. Gutowski (Conference report, invited) |
Optical Coherent Control and Phase Shift of Excitonic and Biexcitonic Four-wave-mixing Polarization T. Voss, H. G. Breunig, I. Rückmann, and J. Gutowski |
Influence of Higher Coulomb Correlations on Optical Coherent-control Signals from a ZnSe Quantum Well H. G. Breunig, T. Voss, I. Rückmann, J. Gutowski, V. M. Axt, and T. Kuhn |
Excitons in Wide-Gap Semiconductors: Coherence, Dynamics, and Lasing J. Gutowski, P. Michler, H. I. Rückmann, H. G. Breunig, M. Röwe, K. Sebald, and T. Voss (invited) Special Issue to the Honor of R. Zimmermann, phys. stat. sol. (b) 234, 70 (2002). |
Influence of the Layer Design on the Far Field Pattern in GaN Based Laser Structures M. Röwe, P. Michler, J. Gutowski, S. Bader, G. Brüderl, V. Kümmler, A. Weimar, A. Lell, and V. Härle Int. Workshop on Nitride Semiconductors, Aachen (Germany) 2002 |
Analysis of Gain Saturation Behavior in GaN Based Quantum Well Lasers M. Vehse, J. Meinertz, O. Lange, P. Michler, J. Gutowski, S. Bader, G. Brüderl, H. A. Lell, and V. Härle Int. Workshop on Nitride Semiconductors, Aachen (Germany) 2002 |
Influence of the barrier height on carrier recombination and transparancy density in GaN-based laser structures M. Vehse, P. Michler, I. Gösling, M. Röwe, J. Gutowski, S. Bader, A. Lell, G. Brüderl, and V. Härle |
Single-photon emission of CdSe quantum dots at temperatures up to 200 K K. Sebald, P. Michler, T. Passow, D.Hommel, G. Bacher, and A. Forchel |
On the Way to the II-VI Quantum Dot VCSEL T. Passow, M. Klude, C. Kruse, K. Leonardi, R. Kröger, G. Alex, K. Sebald, S. Ulrich, P. Michler, J. Gutowski, H. Heinke, and D. Hommel (invited) Spring Meeting of the German Physical Society, Regensburg (Germany) 2002 |
Excitons in Wide-Gap Semiconductors: Coherence, Dynamics, and Lasing J. Gutowski, P. Michler, H. I. Rückmann, H. G. Breunig, M. Röwe, K. Sebald, T. Voss (invited) phys. stat. sol. (b) 234, 70 (2002) Special Issue to the Honor of R. Zimmermann |
Interplay of the trion singlet and triplet state transitions in magnetooptical and time-resolved investigation of ZnSe/Zn(S,Se) single quantum wells J. Gutowski, K. Sebald, C. Roder, P. Michler, M. Klude, H. Wenisch, and D. Hommel 10th International Conference on II-VI Compounds, Bremen, Germany, September 9-14, 2001 |
Optical Gain of CdSe Quantum Dot Stacks K. Sebald, P. Michler, J. Gutowski, R. Kröger, T. Passow, M. Klude, and D. Hommel 7th International Conference on Optics and Excitons in Confined Systems, Montpellier (France) 2001 |
Displaced Substitutional Phosphorus Acceptors in Zinc Selenide D. Wolverson, J. J. Davies, S. Strauf, P. Michler, J. Gutowski, M. Klude, H. Heinke, D. Hommel, E. Tourniee, and J.-P. Faurie 10th International Conference on II-VI Compounds, Bremen, Germany, September 9-14, 2001 |
Quantum Optical Studies on Individual Acceptor Bound Excitons in a Semiconductor S. Strauf, P. Michler, M. Klude, D. Hommel, G. Bacher, and A. Forchel |
Negatively charged donor centers in ultrathin ZnSe:N layers S. Strauf, P. Michler, J. Gutowski, M. Klude, D. Hommel, D. Wolverson, and J.J. Davies 10th International Conference on II-VI Compounds, Bremen, Germany, September 9-14, 2001 |
Coherent control of biexcitonic polarization H. G. Breunig, T. Voss, I. Rückmann, and J. Gutowski |
Biexcitonic effects in the coherent control of the excitonic polarization detected in six-wave-mixing signals T. Voss, H. G. Breunig, I. Rückmann, J. Gutowski, V. M. Axt, and T. Kuhn |
Evidence of density-dependent dephasing in interferometric four-wave-mixing experiments on heavy-hole excitons in ZnSe quantum wells H. G. Breunig, T. Trüper, I. Rückmann, J. Gutowski, and F. Jahnke |
Influence of the Transverse and Lateral Waveguide on the Far Field Pattern in GaN Based Laser Structures M. Röwe, P. Michler, J. Gutowski, S. Bader, B. Hahn, V. Kümmler, A. Weimar, A. Lell, and V. Härle 4th International Conference on Nitride Semiconductors, Denver, Colorado USA, July 16-20, 2001 |
Correlation of Barrier Height and Nonradiative Carrier Recombination and the Consequences for Optical Gain in GaN Based Laser Structures M. Vehse, P. Michler, I. Gösling, M. Röwe, J. Gutowski, S. Bader, A. Lell, G. Brüderl, and V. Härle 4th International Conference on Nitride Semiconductors, Denver, Colorado USA, July 16-20, 2001 |
Analysis of Time-Resolved Donor-Acceptor-Pair Recombination in MBE and MOVPE Grown GaN:Mg S. Strauf, S. M. Ulrich, P. Michler, J. Gutowski, T. Böttcher, S. Figge, S. Einfeldt, and D. Hommel Forth International Conference on Nitride Semiconductors, Denver, Colorado USA, July 16-20, 2001 |
Influence of composition and well-width fluctuations on optical gain in (In,Ga)N multiple quantum wells M. Vehse, P. Michler, J. Gutowski, S. Figge, D. Hommel, H. Selke, S. Keller, S. P. DenBaars |
Optical gain and saturation in nitride-based laser structures M. Vehse, P. Michler, O. Lange, M. Röwe, J. Gutowski, S. Bader, H.-J. Lugauer, G. Brüderl, A. Weimar, A. Lell, and V. Härle |
Fine structure of the amplified spontaneous emission of ZnSe laser structures R. Heinecke, U. Neukirch, P. Michler, and J. Gutowski 25nd International Conference on the Physics of Semiconductors, Osaka, (Japan), September 17-22, (2000) Proceedings of the 25th International Conference on the Physics of Semiconductors, Osaka 2000Eds N. Miura, T. Ando, |
Direct evidence for the trigonal symmetry of shallow phosporus acceptors in ZnSeJ. J. Davies, D. Wolverson, S. Strauf, P. Michler, J. Gutowski, M. Klude, K. Ohkawa, D. Hommel, E. Tournie, and J.-P. Faurie |
Gain saturation in (In,Ga)N/GaN/(Al,Ga)N laser structures P. Michler, O. Lange, M. Vehse, J. Gutowski, S. Bader, B. Hahn, H.-J. Lugauer and V. Härle 3nd International Symposium on Blue Laser and Light Emitting Diodes, Zeuthen/Berlin, Germany, 6-10 March 2000 |
Temperature Dependence of Magnesium Related Optical Transitions in GaN:Mg S. Strauf, S. Ulrich, P. Michler, J. Gutowski, V. Kirchner, S. Figge, S. Einfeldt, and D. Hommel Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series 1 pp. 721-724 (2000) |
Determination of compensation ratios and concentration of compensating impurities in semiconductors J. Gutowski, P. Bäume, M. Behringer, and D. Hommel 25nd International Conference on the Physics of Semiconductors, Osaka, (Japan), September 17-22 (2000).Proceedings of the 25th International Conference on the Physics of SemicondutorsSpringer, Eds N. Miura, T. Ando, p 1405-1406 (2000) |
Shallow donors in ultrathin nitrogen doped ZnSe layers - a novel or a disregarded compensation mechanism in II-VI device structures? S. Strauf, P. Michler, J. Gutowski, M. Klude, and D. Hommel 9th International Conference on II-VI Compounds, November 1-5, Kyoto, Japan 1999 |
Negatively charged trion in ZnSe single quantum wells with very low electron densities O. Homburg, K. Sebald, P. Michler, J. Gutowski, H. Wenisch, and D. Hommel |
The trion spin-singlet and -triplet states in ZnSe single quantum wells O. Homburg, P. Michler, K. Sebald, J. Gutowski, H. Wenisch, and D. Hommel 9th International Conference on II-VI Compounds, November 1-5, Kyoto, Japan 1999 |
Magnetooptics of trions in ZnSe/(Zn,Mg)(S,Se) single quantum wells K. Sebald, O. Homburg, P. Michler, J. Gutowski, M. Klude, H. Wenisch, and D. Hommel 25nd International Conference on the Physics of Semiconductors, Osaka, (Japan), September 17-22, (2000).Proceedings of the 25th International Conference on the Physics of Semicondutors Springer, Eds N. Miura, T. Ando, p 1523 (2000) |
Polariton-biexciton transitions in a semiconductor microcavity U. Neukirch, S.R. Bolton, N. Fromer, L.J. Sham, and D.S. Chemla |
Influence of barrier doping and barrier composition on optical gain in (In,Ga)N MQWs M. Vehse, P. Michler, J. Gutowski, S. Figge, D. Hommel, H. Selke, P. Ryder, S. Keller and S. P. DenBaars Third International Conference on Nitride Semiconductors (ICNS3), Montpellier, France, 1999 |
Optical spectroscopy of Mg- and C-related donor and acceptor levels in GaN grown by MBE S. Strauf, P. Michler, J. Gutowski, U. Birkle, M. Fehrer, S. Einfeld, and D. Hommel Third International Conference on Nitride Semiconductors (ICNS3), Montpellier, France, 1999 |
Studies on Carbon as Alternative P-Type Dopant for Gallium Nitride U. Birkle, M. Fehrer, V. Kirchner, S. Einfeldt, D. Hommel, S. Strauf, P. Michler, and J. Gutowski |
Biexcitonic gain characteristics in ZnSe-based lasers with binary wells O. Homburg, P. Michler, R. Heinecke, J. Gutowski, H. Wenisch, M. Behringer, and D. Hommel |
Gain characteristics of ZnSe/(Zn,Mg)(S,Se)/(Zn,Mg)(S,Se) quantum-well lasers P. Michler, M. F. Pereira Jr., O. Homburg, L. Nerger, J. Gutowski, H. Wenisch, and D. Hommel Proceedings SPIE 3625, Physics and Simulation of Optoelectronic Devices, 1999 |
Gain mechanisms in ZnSe based separate-confinement-heterostructure lasers with binary wells O. Homburg, P. Michler, H. Wenisch, M. Behringer, J. Gutowski, and D. Hommel 24nd International Conference on the Physics of Semiconductors, Jerusalem (Israel), August 2-7, (1998) |
Manifestation of exciton amplitude fluctuations in the transient polarisation state of four-wave-mixing signals B. Haase, U. Neukirch, J. Gutowski, G. Bartels, A. Stahl, V.M. Axt, J. Nürnberger, and W. Faschinger |
Donor-acceptor-pair recombination for impurity identification and analysis of cubic inclusions in Mg- and C-doped MBE grown hexagonal GaN S. Strauf, P. Michler, J. Gutowski, U. Birkle, S. Einfeldt, V. Kirchner, H. Heinke, and D. Hommel Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes, Kisarazu, Chiba, Japan |
Excitonic Transitions in MBE Grown h-GaN with Cubic Inclusions S. Strauf, P. Michler, J. Gutowski, H. Selke, U. Birkle, S. Einfeldt, and D. Hommel |
Influence of Coulomb correlations on gain and stimulated emission in (Zn,Cd)Se/Zn(S,Se)/(Zn,Mg)(S,Se) quantum well lasers P. Michler, M. Vehse, J. Gutowski, K. Behringer, D. Hommel, M. F. Pereira, and K. Henneberger |
Compensation mechanisms in ZnSe:N and codoped ZnSe:N:Cl M. Behringer, P. Bäume, J. Gutowski, and D. Hommel |
Temperature dependent gain characteristics of ZnSe based separate-confinement heterostructure lasers with binary wells P. Michler, M. F. Pereira Jr., O. Homburg, L. Nerger, J. Gutowski, H. Wenisch, and D. Hommel |
Spectro-temporal gain dynamics of optically pumped II-VI multiple quantum well structures K. Wundke, U. Neukirch, P. Michler, J. Gutowski, M. Behringer, and D. Hommel 8th International Conference on II-VI Compounds, 25 - 29 August 1997, Grenoble, France |
Optical gain characteristics and excitonic nonlinearities in II-VI laser diodes P. Michler, M. Vehse, J. Gutowski, M. Behringer, D. Hommel, M. F. Pereira Jr. and K. Henneberger 8th International Conference on II-VI Compounds, 25 - 29 August 1997, Grenoble, France |
Quantum confined Stark effect of II-VI heterostructures suitable as modulators in the blue-green spectral region P. Michler, T. Lilienkamp, W. Ebeling, J. Gutowski, M. Behringer, M. Fehrer, and D. Hommel |
Electric-field-dependent absorption of ZnSe-based quantum wells: The transition from two-dimensional to three-dimensional behavior D. Merbach, E. Schöll, W. Ebeling, P. Michler, and J. Gutowski |
Dynamics of gain and stimulated emission in II-VI laser diodes P. Michler, U. Neukirch, K. Wundke, J. Gutowski, M. Behringer, D. Hommel, H. Güldner, and K.Henneberger Fifth International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors, Graal-Müritz, Germany, September 1-5, 1997 |
Identification of higher-order electronic coherences in semiconductors by their signature in four-wave-mixing signals G. Bartels, A. Stahl, V.M. Axt, B. Haase, U. Neukirch, and J. Gutowski |
Excitonic optical nonlinearities and dynamics in II-VI heterostructures and laser diodes J. Gutowski, U. Neukirch, P. Michler, B. Haase, and K. Wundke |
Density dependence of the exciton energy in semiconductors G. Manzke, Q.Y. Peng, K. Henneberger, U. Neukirch, K. Hauke, K. Wundke, J. Gutowski, and D. Hommel |
Lateral motion of confined excitonic polaritons U. Neukirch, G. Bley, J. Gutowski, and D. Hommel |