Vortragende: Mirjam Henn, IALB, Universität Bremen

Einladender Hochschullehrer: Prof. Dr.-Ing. Nando Kaminski

Further Info: Presentation will be in English; Hybrid: participation in person and via ZOOM possible

Abstract:

Due to its high breakdown field strength, gallium nitride (GaN) is an attractive material for next-generation power devices, especially in the automotive sector.

In comparison to the already industrialized GaN high electron mobility transistors (HEMTs), metal-oxide-semiconductor field-effect-transistors (MOSFETs) are better suited to achieve the high power densities and breakdown voltages required for automotive applications.

After the previous work focused on the gate dielectric breakdown behaviour in the transistor's off-state, the attention is now directed to the transistor's on-state. For the realization of a low on-resistance, a high channel mobility is required and the channel properties are in general determined by the gate dielectric/semiconductor interface.  

This talk will mainly discuss how certain processing steps related to the interface affect crucial transistor properties, such as channel mobility and threshold voltage.

Zoom-Meeting
uni-bremen.zoom.us/j/95731785485
Meeting-ID: 957 3178 5485
Kenncode: 455134