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Publikationen AG Eickhoff

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2020

 

Rare Earth-Doped Y4Al2O9 Nanoparticles for Stable Light-Converting Phosphors

Chenyang Liu, Suman Pokhrel, Christian Tessarek, Haipeng Li, Marco Schowalter, Andreas Rosenauer, Martin Eickhoff, Lutz Mädler

ACS Applied Nano Materials 3, 699 (2020)

DOI: 10.1021/acsanm.9b02231

 

2019

 

Consistent description of mesoscopic transport: Case study of current-dependent magnetoconductance in single GaN:Ge nanowires

Patrick Uredat, Pascal Hille, Jörg Schörmann, Martin Eickhoff, Peter J. Klar, Matthias T. Elm

Physical Review B 100, 085409 (2019)

DOI: 10.1103/PhysRevB.100.085409

 

 

The Role of Polarity in Nonplanar Semiconductor Nanostructures

María de la Mata, Reza R. Zamani, Sara Martí-Sánchez, Martin Eickhoff, Qihua Xiong, Anna Fontcuberta i Morral, Philippe Caroff, Jordi Arbiol

Nano Letters 19, 3396 (2019)

DOI: 10.1021/acs.nanolett.9b00459

 

 

Electrical Polarization in AlN/GaN Nanodisks Measured by Momentum-Resolved 4D Scanning Transmission Electron Microscopy

Knut Müller-Caspary, Tim Grieb, Jan Müßener, Nicolas Gauquelin, Pascal Hille, Jörg Schörmann, Johan Verbeeck, Sandra Van Aert, Martin Eickhoff, Andreas Rosenauer

Physical Review Letters 122, 106102 (2019)

DOI: 10.1103/PhysRevLett.122.106102

 

2018 

 

Photoluminescence Detection of Surface Oxidation Processes on InGaN/GaN Nanowire Arrays

Konrad Maier, Andreas Helwig, Gerhard Müller, Jörg Schörmann, Martin Eickhoff

ACS Sensors 3, 2254 (2018)

DOI: 10.1021/acssensors.8b0041

 

 

Influence of the atom source operating parameters on the structural and optical properties of InxGa1−xN nanowires grown by plasma-assisted molecular beam epitaxy

P. Hille, F. Walther, P. Klement, J. Müßener, J. Schörmann, J. Kaupe, S. Mitić, N. W. Rosemann, S. Chatterjee, A. Beyer, K. I. Gries, K. Volz, M. Eickhoff

Journal of Applied Physics 124, 165703 (2018)

DOI: 10.1063/1.5050391

 

 

Optical Analysis of Oxygen Self‐Diffusion in Ultrathin CeO2 Layers at Low Temperatures

Paula Neuderth, Pascal Hille, Sara Martí‐Sánchez, María de la Mata, Mariona Coll, Jordi Arbiol, Martin Eickhoff

Advanced Energy Materials 8, 1802120 (2018)

DOI: 10.1002/aenm.201802120

 

 

Effects of the Fermi level energy on the adsorption of O-2 to monolayer MoS2

Philip Klement, Christina Steinke, Sangam Chatterjee, Tim O. Wehling, Martin Eickhoff

2D Materials 5, 045025 (2018)

DOI: 10.1088/2053-1583/aadc24

 

 

Dynamic Extracellular Imaging of Biochemical Cell Activity Using InGaN/GaN Nanowire Arrays as Nanophotonic Probes

Sara Hölzel, Mikhail V. Zyuzin, Jens Wallys, Ervice Pouokam, Jan Müßener, Pascal Hille, Martin Diener, Wolfgang J. Parak, Martin Eickhoff

Advanced Functional Materials 28, 1802503 (2018)

DOI: 10.1002/adfm.201802503

 

 

Anisotropic Optical Properties of Metastable (01(1)over-bar2) α-Ga2O3 Grown by Plasma-Assisted Molecular Beam Epitaxy

M. Kracht, A. Karg, M. Feneberg, J. Bläsing, J. Schörmann, R. Goldhahn, M. Eickhoff

Physical Review Applied 10, 024047 (2018)

DOI: 10.1103/PhysRevApplied.10.024047

 

 

Suppression of the quantum-confined Stark effect in polar nitride heterostructures

S. Schlichting, G. M. O. Hönig, J. Müßener, P. Hille, T. Grieb, S. Westerkamp, J. Teubert, J. Schörmann, M. R. Wagner, A. Rosenauer, M. Eickhoff, A. Hoffmann, G. Callsen 

Communications Physics 1, 48 (2018)

DOI: 10.1038/s42005-018-0044-1

 

 

Ion sensitive AlGaN/GaN field-effect transistors with monolithically integrated wheatstone bridge for temperature- and drift compensation in enzymatic biosensors

Daniel Stock, Gesche Mareike Müntze, Stephan Figge, Martin Eickhoff

Sensors and Actuators B: Chemical 263, 20 (2018)

DOI: 10.1016/j.snb.2018.02.068

 

 

Photoelectrochemical response of GaN, InGaN, and GaNP nanowire ensembles

Jan M. Philipps, Sara Hölzel, Pascal Hille, Jörg Schörmann, Sangam Chatterjee, Irina A. Buyanova, Martin Eickhoff, Detlev M. Hofmann

Journal of Applied Physics 123, 175703 (2018)

DOI: 10.1063/1.5024334

 

 

Optical emission of GaN/AlN quantum-wires – the role of charge transfer from a nanowire template

Jan Müßener, Ludwig A. Th. Greif, Stefan Kalinowski, Gordon Callsen, Pascal Hille, Jörg Schörmann, Markus R. Wagner, Andrei Schliwa, Sara Martí-Sánchez, Jordi Arbiol, Axel Hoffmann, Martin Eickhoff

Nanoscale 10, 5591 (2018)

DOI: 10.1039/C7NR08057C

 

 

Synthesis of SnO2 Nanowires Using SnI2 as Precursor and Their Application as High‐Performance Self‐Powered Ultraviolet Photodetectors

Jie Jiang, Florian Heck, Detlev M. Hofmann, Martin Eickhoff

Physica Status Solidi B 255, 1700426 (2018)

DOI: 10.1002/pssb.201700426

 

 

Passivation layers for nanostructured photoanodes: ultra-thin oxides on InGaN nanowires

P. Neuderth, P. Hille, J. Schörmann, A. Frank, C. Reitz, S. Martí-Sánchez, M. de la Mata, M. Coll, J. Arbiol, R. Marschall, M. Eickhoff

Journal of Materials Chemistry A 6, 565 (2018)

DOI: 10.1039/C7TA08071A

 

 

Flexible Modulation of Electronic Band Structures of Wide Band Gap GaN Semiconductors Using Bioinspired, Nonbiological Helical Peptides

Sven Mehlhose, Nataliya Frenkel, Hirotaka Uji, Sara Hölzel, Gesche Müntze, Daniel Stock, Silvio Neugebauer, Armin Dadgar, Wasim Abuillan, Martin Eickhoff, Shunsaku Kimura, Motomu Tanaka

Advanced Functional Materials 28, 1704034 (2018)

DOI: 10.1002/adfm.201704034

 

2017

 

Evidence for nitrogen-related deep acceptor states in SnO2 grown by chemical vapor deposition

Jie Jiang, Lars Ostheim, Matthias Kleine-Boymann, Detlev M. Hofmann, Peter J. Klar, Martin Eickhoff

Journal of Applied Physics 122, 205702 (2017)

DOI: 10.1063/1.5000115

 

 

Tin-Assisted Synthesis of ε−Ga2O3 by Molecular Beam Epitaxy

M. Kracht, A. Karg, J. Schörmann, M. Weinhold, D. Zink, F. Michel, M. Rohnke, M. Schowalter, B. Gerken, A. Rosenauer, P. J. Klar, J. Janek, M. Eickhoff

Physical Review Applied 8, 054002 (2017)

DOI: 10.1103/PhysRevApplied.8.054002

 

 

Three dimensional reconstruction of InGaN nanodisks in GaN nanowires: Improvement of the nanowire sample preparation to avoid missing wedge effects

Katharina Ines Gries, Julian Schlechtweg, Pascal Hille, Jörg Schörmann, Martin Eickhoff, Kerstin Volz

Journal of Crystal Growth 475, 202 (2017)

DOI: 10.1016/j.jcrysgro.2017.06.020

 

 

Competitive adsorption of air constituents as observed on InGaN/GaN nano-optical probes

Konrad Maier, Andreas Helwig, Gerhard Müller, Pascal Hille, Jörg Teubert, Martin Eickhoff

Sensors and Actuators B: Chemical 250, 91 (2017)

DOI: 10.1016/j.snb.2017.04.098

 

 

Bias-Controlled Optical Transitions in GaN/AlN Nanowire Heterostructures

Jan Müßener, Pascal Hille, Tim Grieb, Jörg Schörmann, Jörg Teubert, Eva Monroy, Andreas Rosenauer, Martin Eickhoff

ACS Nano 11, 8758 (2017)

DOI: 10.1021/acsnano.7b02419

 

 

InGaN/GaN nanowires as a new platform for photoelectrochemical sensors – detection of NADH

M. Riedel, S. Hölzel, P. Hille, J. Schörmann, M. Eickhoff, F. Lisdat

Biosensors and Bioelectronics 94, 298 (2017)

DOI: 10.1016/j.bios.2017.03.022

 

 

Bias-Controlled Spectral Response in GaN/AlN Single-Nanowire Ultraviolet Photodetectors

Maria Spies, Martien I. den Hertog , Pascal Hille, Jörg Schörmann, Jakub Polaczyński, Bruno Gayral, Martin Eickhoff, Eva Monroy, Jonas Lähnemann

Nano Letters 17, 4231 (2017)

DOI: 10.1021/acs.nanolett.7b01118

 

 

Transport mechanisms in SnO2:N,H thin film grown by chemical vapor deposition

Jie Jiang, Lars Ostheim, David Hartung, Yinmei Lu, Detlev M. Hofmann, Martin Eickhoff, Peter J. Klar

Physica Status Solidi B 254, 1700003 (2017)

DOI: 10.1002/pssb.201700003

 

 

Study of the carrier transfer across the GaNP nanowire electrolyte interface by electron paramagnetic spin trapping

Jan M. Philipps, Jan E. Stehr, Detlev M. Hofmann, Irina A. Buyanova, Martin Eickhoff

Applied Physics Letters 110, 222101 (2017)

DOI: 10.1063/1.4984277

 

 

Influence of the cluster constituents’ reactivity on the desorption/ionization process induced by neutral SO2 clusters

A. Portz, M. Baur, C. R. Gebhardt, A. J. Frank, P. Neuderth, M. Eickhoff, M. Dürr

Journal of Chemical Physics 146, 134705 (2017)

DOI: 10.1063/1.4979488

 

 

Photoluminescence Probing of Complex H2O Adsorption on InGaN/GaN Nanowires

Konrad Maier, Andreas Helwig, Gerhard Müller, Pascal Hille, Jörg Teubert, Martin Eickhoff

Nano Letters 17, 615 (2017)

DOI: 10.1021/acs.nanolett.6b03299

 

2016 

 

Interfacial properties of self-assembled GaN nanowires on pre-processed Al2O3(0001) surfaces

T. Koukoula, J. Kioseoglou,Th. Kehagias, F. Furtmayr, M. Eickhoff, H. Kirmse, Th. Karakostas, Ph. Komninou

Materials Science in Semiconductor Processing 55, 46 (2016)

DOI: 10.1016/j.mssp.2016.03.015

 

 

Hydrogen induced mobility enhancement in RF sputtered Cu2O thin films

K. P. Hering, C. Kandzia, J. Benz, B. G. Kramm, M. Eickhoff, P. J. Klar

Journal of Applied Physics 120, 185705 (2016)

DOI: 10.1063/1.4966605

 

 

Ge doping of GaN beyond the Mott transition

A. Ajay, J. Schörmann, M. Jiménez-Rodriguez, C. B. Lim, F. Walther, M. Rohnke, I. Mouton, L. Amichi, C. Bougerol, M. I. Den Hertog, M. Eickhoff

Journal of Physics D: Applied Physics 49, 445301 (2016)

DOI: 10.1088/0022-3727/49/44/445301

 

 

Luminescent properties of ZnO and ZnMgO epitaxial layers under high hydrostatic pressure

A. Kaminska, A. Duzynska, M. Nowakowska, A. Suchocki, T. A. Wassner, B. Laumer, M. Eickhoff

Journal of Alloys and Compounds 672, 125 (2016)

DOI: 10.1016/j.jallcom.2016.02.128

 

 

Shift of optical absorption edge in SnO2 films with high concentrations of nitrogen grown by chemical vapor deposition

Jie Jiang, Yinmei Lu, Bruno K. Meyer, Detlev M. Hofmann, Martin Eickhoff

Journal of Applied Physics 119, 245703 (2016)

DOI: 10.1063/1.4954693

 

 

Nitrogen incorporation in SnO2 thin films grown by chemical vapor deposition

Jie Jiang, Yinmei Lu, Benedikt Kramm, Fabian Michel, Christian T. Reindl, Max E. Kracht, Peter J. Klar, Bruno K. Meyer, Martin Eickhoff

Physica Status Solidi B 253, 1087 (2016)

DOI: 10.1002/pssb.201552747

 

 

Short-wavelength, mid- and far-infrared intersubband absorption in nonpolar GaN/Al(Ga)N heterostructures

Caroline B. Lim, Mark Beeler, Akhil Ajay, Jonas Lähnemann, Edith Bellet-Amalric, Catherine Bougerol, Jörg Schörmann, Martin Eickhoff, Eva Monroy

Japanese Journal of Applied Physics 55, 05FG05 (2016)

DOI: 10.7567/JJAP.55.05FG05

 

 

UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices

Jonas Lähnemann, Martien Den Hertog, Pascal Hille, Marı́a de la Mata, Thierry Fournier, Jörg Schörmann, Jordi Arbiol, Martin Eickhoff, Eva Monroy

Nano Letters 16, 3260 (2016)

DOI: 10.1021/acs.nanolett.6b00806

 

 

Optical manipulation of a multilevel nuclear spin in ZnO: Master equation and experiment

J. H. Buß, J. Rudolph, T. A. Wassner, M. Eickhoff, D. Hägele

Physical Review B 93, 155204 (2016)

DOI: 10.1103/PhysRevB.93.155204

 

 

In situ monitoring of myenteric neuron activity using acetylcholinesterase-modified AlGaN/GaN solution-gate field-effect transistors

Gesche Mareike Müntze, Ervice Pouokam, Julia Steidle, Wladimir Schäfer, Alexander Sasse, Kai Röth, Martin Diener, Martin Eickhoff

Biosensors and Bioelectronics 77, 1048 (2016)

DOI: 10.1016/j.bios.2015.10.076

 

 

Plasma assisted molecular beam epitaxy of Cu2O on MgO(001): Influence of copper flux on epitaxial orientation

M. Kracht, J. Schoermann, M. Eickhoff

Journal of Crystal Growth 436, 87 (2016)

DOI: 10.1016/j.jcrysgro.2015.11.041

 

2015

 

Doping-induced universal conductance fluctuations in GaN nanowires

Matthias T. Elm, Patrick Uredat, Jan Binder, Lars Ostheim, Markus Schäfer, Pascal Hille, Jan Müßener, Jörg Schörmann, Martin Eickhoff, Peter J. Klar

Nano Letters 15, 7822 (2015)

DOI: 10.1021/acs.nanolett.5b02332

 

 

Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5-10 THz band

C. B. Lim, A. Ajay, C. Bougerol, B. Haas, J. Schörmann, M. Beeler, J. Lähnemann, M. Eickhoff, E. Monroy

Nanotechnology 26, 435201 (2015)

DOI: 10.1088/0957-4484/26/43/435201

 

 

Effect of water vapor and surface morphology on the low temperature response of metal oxide semiconductor gas sensors

Konrad Maier, Andreas Helwig, Gerhard Müller, Pascal Hille, Martin Eickhoff

Materials 8, 6570 (2015)

DOI: 10.3390/ma8095323

 

 

Self-assembly of ordered wurtzite/rock salt heterostructures - A new view on phase separation in MgxZn1-xO

K. I. Gries, T. A. Wassner, S. Vogel, J. Bruckbauer, I. Häusler, R. Straubinger, A. Beyer, A. Chernikov, B. Laumer, M. Kracht, C. Heiliger, J. Janek, S. Chatterjee, K. Volz, M. Eickhoff

Journal of Applied Physics 118, 045706 (2015)

DOI: 10.1063/1.4926776

 

 

Structural and electronic properties of GaN nanowires with embedded InxGa1-xN nanodisks

J. Kioseoglou, Th. Pavloudis, Th. Kehagias, Ph. Komninou, Th. Karakostas, C. D. Latham, M. J. Rayson, P. R. Briddon, M. Eickhoff

Journal of Applied Physics 118, 034301 (2015)

DOI: 10.1063/1.4926757

 

 

Long-lived excitons in GaN/AlN nanowire heterostructures

M. Beeler, C. B. Lim, P. Hille, J. Bleuse, J. Schörmann, M. de la Mata, J. Arbiol, M. Eickhoff, E. Monroy

Physical Review B 91, 205440 (2015)

DOI: 10.1103/PhysRevB.91.205440

 

 

Electrical transport properties of Ge-doped GaN nanowires

M. Schäfer, M. Günther, C. Länger, J. Müßener, M. Feneberg, P. Uredat, M. T. Elm, P. Hille, J. Schörmann, J. Teubert, T. Henning, P. J. Klar, M. Eickhoff

Nanotechnology 26, 135704 (2015)

DOI: 10.1088/0957-4484/26/13/135704

 

 

Quantitative analysis of immobilized penicillinase using enzyme-modified AlGaN/GaN field-effect transistors

Gesche Mareike Müntze, Barbara Baur, Wladimir Schäfer, Alexander Sasse, John Howgate, Kai Röth, Martin Eickhoff

Biosensors and Bioelectronics 64, 605 (2015)

DOI: 10.1016/j.bios.2014.09.062

 

 

Integration of an opto-chemical detector based on group III-nitride nanowire heterostructures

R. Kleindienst, P. Becker, V. Cimalla, A. Grewe, P. Hille, M. Krüger, J. Schörmann, U. T. Schwarz, J. Teubert, M. Eickhoff, S. Sinzinger

Applied Optics 54, 839 (2015)

DOI: 10.1364/AO.54.000839

 

2014 

 

Probing the Internal Electric Field in GaN/AlGaN Nanowire Heterostructures

Jan Müßener, Jörg Teubert, Pascal Hille, Markus Schäfer, Jörg Schörmann, Maria de la Mata, Jordi Arbiol, Martin Eickhoff

Nano Letters 14, 5118 (2014)

DOI: 10.1021/nl501845m

 

 

High Precision, Electrochemical Detection of Reversible Binding of Recombinant Proteins on Wide Bandgap GaN Electrodes Functionalized with Biomembrane Models

Nataliya Frenkel, Jens Wallys, Sara Lippert, Jörg Teubert, Stefan Kaufmann, Aparna Das, Eva Monroy, Martin Eickhoff, Motomu Tanaka

Advanced Functional Materials 24, 4927 (2014)

DOI: 10.1002/adfm.201400388

 

 

Detection of oxidising gases using an optochemical sensor system based on GaN/InGaN nanowires

Konrad Maier, Andreas Helwig, Gerhard Müller, Pascal Becker, Pascal Hille, Jörg Schörmann, Jörg Teubert, Martin Eickhoff

Sensors and Actuators B: Chemical 197, 87 (2014 )

DOI: 10.1016/j.snb.2014.02.002

 

 

Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by germanium doping

P. Hille, J. Müßener, P. Becker, M. de la Mata, N. Rosemann, C. Magén, J. Arbiol, J. Teubert, S. Chatterjee, J. Schörmann, M. Eickhoff

Applied Physics Letters 104, 102104 (2014)

DOI: 10.1063/1.4868411

 

 

Intraband Absorption in Self-Assembled Ge-Doped GaN/AlN Nanowire Heterostructures

M. Beeler†, P. Hille, J. Schörmann, J. Teubert, M. de la Mata, J. Arbiol, M. Eickhoff, E. Monroy

Nano Letters 14, 1665 (2014)

DOI: 10.1021/nl5002247

 

2013

 

Contactless electroreflectance studies of free exciton binding energy in Zn1-xMgxO epilayers

M. Wełna, R. Kudrawiec, A. Kaminska, A. Kozanecki, B. Laumer, M. Eickhoff J. Misiewicz

Applied Physics Letters 103, 251908 (2013)

DOI: 10.1063/1.4851215

 

 

Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires

Th. Kehagias, G. P. Dimitrakopulos, P. Becker, J. Kioseoglou, F. Furtmayr, T. Koukoula, I. Häusler, A. Chernikov, S. Chatterjee, Th. Karakostas, H.-M. Solowan, U. T. Schwarz, M. Eickhoff, Ph. Komninou

Nanotechnology 24, 435702 (2013)

DOI: 10.1088/0957-4484/24/43/435702

 

 

Germanium doping of self-assembled GaN nanowires grown by plasma-assisted molecular beam epitaxy

Jörg Schörmann, Pascal Hille, Markus Schäfer, Jan Müßener, Pascal Becker, Peter J. Klar, Matthias Kleine-Boymann, Marcus Rohnke, Maria de la Mata, Jordi Arbiol, Detlev M. Hofmann, Jörg Teubert, Martin Eickhoff

Journal of Applied Physics 114, 103505 (2013)

DOI: 10.1063/1.4820264

 

 

InGaN/GaN quantum dots as optical probes for the electric field at the GaN/electrolyte interface

J. Teubert, S. Koslowski, S. Lippert, M. Schäfer, J. Wallys, G. Dimitrakopulos, Th. Kehagias, Ph. Komninou, A. Das, E. Monroy, M. Eickhoff

Journal of Applied Physics 114, 074313 (2013)

DOI: 10.1063/1.4818624

 

 

Radical formation at the gallium nitride nanowire-electrolyte interface by photoactivated charge transfer

J. M. Philipps, G. M. Müntze, P. Hille, J. Wallys, J. Schörmann, J. Teubert, D. M. Hofmann, M. Eickhoff

Nanotechnology 24, 325701 (2013)

DOI: 10.1088/0957-4484/24/32/325701

 

 

Accurate determination of optical bandgap and lattice parameters of Zn1-xMgxO epitaxial films (0 <= x <= 0.3) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire

Bernhard Laumer, Fabian Schuster, Martin Stutzmann, Andreas Bergmaier, Günther Dollinger, Martin Eickhoff

Journal of Applied Physics 113, 233512 (2013)

DOI: 10.1063/1.4811693

 

 

Bandgap engineering in a nanowire: self-assembled 0, 1 and 2D quantum structures

Jordi Arbiol, Maria de la Mata, Martin Eickhoff, Anna Fontcuberta i Morral

Materials Today 16, 213 (2013)

DOI: 10.1016/j.mattod.2013.06.006

 

 

Optical properties of GaN-based nanowires containing a single Al0.14Ga0.86N/GaN quantum disc

G. Jacopin, L. Rigutti, J. Teubert, F. H. Julien, F. Furtmayr, Ph. Komninou, Th. Kehagias, M. Eickhoff, M. Tchernycheva

Nanotechnology 24, 125201 (2013)

DOI: 10.1088/0957-4484/24/12/125201

 

 

Probing carrier populations in ZnO quantum wells by screening of the internal electric fields

A. Chernikov, S. Schäfer, M. Koch, S. Chatterjee, B. Laumer, M. Eickhoff

Physical Review B 87, 035309 (2013)

DOI: 10.1103/PhysRevB.87.035309

 

 

A review of MBE grown 0D, 1D and 2D quantum structures in a nanowire

Maria de la Mata, Xiang Zhou, Florian Furtmayr, Jörg Teubert, Silvija Gradečak, Martin Eickhoff, Anna Fontcuberta i Morral, Jordi Arbiol

Journal of Materials Chemistry C 1, 4300 (2013)

DOI: 10.1039/C3TC30556B

 

 

Effects of interface geometry on the thermoelectric properties of laterally microstructured ZnO-based thin films

G. Homm, F. Gather, A. Kronenberger, S. Petznick, T. Henning, M. Eickhoff, B. K. Meyer, C. Heiliger, P. J. Klar

Physica Status Solidi A 210, 119 (2013)

DOI: 10.1002/pssa.201228463

 

2012

 

Bias-Enhanced Optical pH Response of Group III-Nitride Nanowires

Jens Wallys, Jörg Teubert, Florian Furtmayr, Detlev M. Hofmann, Martin Eickhoff

Nano Letters 12, 6180 (2012)

DOI: 10.1021/nl303021v

 

 

Opto-chemical sensor system for the detection of H-2 and hydrocarbons based on InGaN/GaN nanowires

Sumit Paul, Andreas Helwig, Gerhard Müller, Florian Furtmayr, Jörg Teubert, Martin Eickhoff

Sensors and Actuators B - Chemical 173, 120 (2012)

DOI: 10.1016/j.snb.2012.06.022

 

 

Growth study of nonpolar Zn1-xMgxO epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy

Bernhard Laumer, Fabian Schuster, Martin Stutzmann, Andreas Bergmaier, Günther Dollinger, Stephen Vogel, Katharina I. Gries, Kerstin Volz, Martin Eickhoff

Applied Physics Letters 101, 122106 (2012)

DOI: 10.1063/1.4754076

 

 

Binary copper oxide semiconductors: From materials towards devices

B. K. Meyer, A. Polity, D. Reppin, M. Becker, P. Hering, P. J. Klar, Th. Sander, C. Reindl, J. Benz, M. Eickhoff, C. Heiliger, M. Heinemann, J. Bläsing, A. Krost, S. Shokovets, C. Müller, C. Ronning

Physica Status Solidi B 249, 1487 (2012)

DOI: 10.1002/pssb.201248128

 

 

ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers

Bernhard Laumer, Fabian Schuster, Thomas A. Wassner, Martin Stutzmann, Marcus Rohnke, Jörg Schörmann, Martin Eickhoff

Journal of Applied Physics 111, 113504 (2012)

DOI: 10.1063/1.4723642

 

 

Polarity Assignment in ZnTe, GaAs, ZnO, and GaN-AlN Nanowires from Direct Dumbbell Analysis

Maria de la Mata, Cesar Magen, Jaume Gazquez, Muhammad Iqbal Bakti Utama, Martin Heiss, Sergei Lopatin, Florian Furtmayr, Carlos J. Fernández-Rojas, Bo Peng, Joan Ramon Morante, Riccardo Rurali, Martin Eickhoff, Anna Fontcuberta i Morral, Qihua Xiong, Jordi Arbiol

Nano Letters 12, 2579 (2012)

DOI: 10.1021/nl300840q

 

 

Electrochemical properties of GaN nanowire electrodes-influence of doping and control by external bias

J. Wallys, S. Hoffmann, F. Furtmayr, J. Teubert, M. Eickhoff

Nanotechnology 23, 165701 (2012)

DOI: 10.1088/0957-4484/23/16/165701

 

 

Phonon-assisted luminescence of polar semiconductors: Frohlich coupling versus deformation-potential scattering

A. Chernikov, V. Bornwasser, M. Koch, S. Chatterjee, C. N. Böttge, T. Feldtmann, M. Kira, S. W. Koch, T. Wassner, S. Lautenschläger, B. K. Meyer, M. Eickhoff

Physical Review B 85, 035201 (2012)

DOI: 10.1103/PhysRevB.85.035201

 

 

Self-assembled GaN quantum wires on GaN/AlN nanowire templates

Jordi Arbiol, Cesar Magen, Pascal Becker, Gwénolé Jacopin, Alexey Chernikov, Sören Schäfer, Florian Furtmayr, Maria Tchernycheva, Lorenzo Rigutti, Jörg Teubert, Sangam Chatterjee, Joan R. Morante, Martin Eickhoff

Nanoscale 4, 7517 (2012)

DOI: 10.1039/C2NR32173D

 

2011

 

Intra-excitonic relaxation dynamics in ZnO

Alexej Chernikov, Martin Koch, Bernhard Laumer, Thomas A. Wassner, Martin Eickhoff, Stephan W. Koch, Sangam Chatterjee

Applied Physics Letters 99, 231910 (2011)

DOI: 10.1063/1.3668102

 

 

Carrier confinement in GaN/AlxGa1−xN nanowire heterostructures (0<x≤ 1)

Florian Furtmayr, Jörg Teubert, Pascal Becker, Sonia Conesa-Boj, Joan Ramon Morante, Alexey Chernikov, Sören Schäfer, Sangam Chatterjee, Jordi Arbiol, Martin Eickhoff

Physical Review B 84, 205303 (2011)

DOI: 10.1103/PhysRevB.84.205303

 

 

Exciton confinement in homo- and heteroepitaxial ZnO/Zn1 − xMgxO quantum wells with x < 0.1

Bernhard Laumer, Thomas A. Wassner, Fabian Schuster, Martin Stutzmann, Jörg Schörmann, Marcus Rohnke, Alexej Chernikov, Verena Bornwasser, Martin Koch, Sangam Chatterjee, Martin Eickhoff

Journal of Applied Physics 110, 093513 (2011)

DOI: 10.1063/1.3658020

 

 

Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires

G. Jacopin, L. Rigutti, L. Largeau, F. Fortuna, F. Furtmayr, F. H. Julien, M. Eickhoff, M. Tchernycheva

Journal of Applied Physics 110, 064313 (2011)

DOI: 10.1063/1.3638698

 

 

GaN nanodiscs embedded in nanowires as optochemical transducers

J. Teubert, P. Becker, F. Furtmayr, M. Eickhoff

Nanotechnology 22 275505 (2011)

DOI: 10.1088/0957-4484/22/27/275505

 

 

Optical properties of MgZnO alloys: Excitons and exciton-phonon complexes

M. D. Neumann, C. Cobet, N. Esser, B. Laumer, T. A. Wassner, M. Eickhoff, M. Feneberg, R. Goldhahn

Journal of Applied Physics 110, 013520 (2011)

DOI: 10.1063/1.3606414

 

 

Carrier dynamics in (ZnMg)O alloy materials

Alexej Chernikov, Swantje Horst, Martin Koch, Kerstin Volz, Sangam Chatterjee, Stephan W. Koch, Thomas A. Wassner, Bernhard Laumer, Martin Eickhoff

Physica Status Solidi C 8, 1149 (2011)

DOI: 10.1002/pssc.201000859

 

2010

 

Origin of energy dispersion in AlxGa1−xN/GaN nanowire quantum discs with low Al content

L. Rigutti, J. Teubert, G. Jacopin, F. Fortuna, M. Tchernycheva, A. De Luna Bugallo, F. H. Julien, F. Furtmayr, M. Stutzmann, M. Eickhoff

Physical Review B 82, 235308 (2010)

DOI: 10.1103/PhysRevB.82.235308

 

 

Investigation of carrier dynamics in Zn1−xMgxO by time-resolved photoluminescence

A. Chernikov, S. Horst, M. Koch, K. Volz, S. Chatterjee, S. W. Koch, T. A. Wassner, B. Laumer, M. Eickhoff

Journal of Luminescence 130, 2256 (2010)

DOI: 10.1016/j.jlumin.2010.06.030

 

 

Electron spin resonance of Zn1−xMgxO thin films grown by plasma-assisted molecular beam epitaxy

T. A. Wassner, B. Laumer, M. Althammer, S. T. B. Goennenwein, M. Stutzmann, M. Eickhoff, M. S. Brandt

Applied Physics Letters 97, 092102 (2010)

DOI: 10.1063/1.3477951

 

 

Photocatalytic Cleavage of Self‐Assembled Organic Monolayers by UV‐Induced Charge Transfer from GaN Substrates

John Howgate, Sebastian J. Schoell, Marco Hoeb, Wiebke Steins, Barbara Baur, Samira Hertrich, Bert Nickel, Ian D. Sharp, Martin Stutzmann, Martin Eickhoff

Advanced Materials 22, 2632 (2010)

DOI: 10.1002/adma.200903756

 

 

P‐type doping of semipolar GaN(11-22) by plasma‐assisted molecular‐beam epitaxy

A. Das, L. Lahourcade, J. Pernot, S. Valdueza‐Felip, P. Ruterana, A. Laufer, M. Eickhoff, E. Monroy

Physica Status Solidi C 7, 1913 (2010)

DOI: 10.1002/pssc.200983618

 

 

Optical characterization of AlGaN/GaN quantum disc structures in single nanowires

L. Rigutti, F. Fortuna, M. Tchernycheva, A. De Luna Bugallo, G. Jacopin, F. H. Julien, F. Furtmayr, M. Stutzmann, M. Eickhoff

Physica Status Solidi C 7, 2243 (2010)

DOI: 10.1002/pssc.200983513

 

 

Photoluminescence polarization properties of single GaN nanowires containing AlxGa1−xN/GaN quantum discs

L. Rigutti, M. Tchernycheva, A. De Luna Bugallo, G. Jacopin, F. H. Julien, F. Furtmayr, M. Stutzmann, M. Eickhoff, R. Songmuang, F. Fortuna

Physical Review B 81, 045411 (2010)

DOI: 10.1103/PhysRevB.81.045411

 

2009

 

Mg doping and its effect on the semipolar GaN(112-2) growth kinetics

L. Lahourcade, J. Pernot, A. Wirthmüller, M. P. Chauvat, P. Ruterana, A. Laufer, M. Eickhoff, E. Monroy

Applied Physics Letters 95, 171908 (2009)

DOI: 10.1063/1.3256189

 

 

Ultrathin GaN/AlN/GaN solution-gate field effect transistor with enhanced resolution at low source-gate voltage

A. Bengoechea Encabo, J. Howgate, M. Stutzmann, M. Eickhoff, M. A. Sánchez-García,

Sensors and Actuators B: Chemical 142, 304 (2009)

DOI: 10.1016/j.snb.2009.07.016

 

 

Gallium nitride electrodes for membrane-based electrochemical biosensors

T. Schubert, G. Steinhoff, H.-G. von Ribbeck, M. Stutzmannn, M. Eickhoff, M. Tanaka,

European Physical Journal E 30, 233 (2009)

DOI: 10.1140/epje/i2009-10511-x

 

 

Strain effects and phonon–plasmon coupled modes in Si‐doped AlN

M. Gómez‐Gómez, A. Cros, M. Hermann, M. Stutzmann, M. Eickhoff

Physica Status Solidi A 206, 1183 (2009)

DOI: 10.1002/pssa.200880852

 

 

Analysis of polarization‐dependent photoreflectance studies for c ‐plane GaN films grown on a ‐plane sapphire

Marcus Röppischer, Rüdiger Goldhahn, Carsten Buchheim, Florian Furtmayr, Thomas Wassner, Martin Eickhoff, Christoph Cobet, Norbert Esser

Physica Status Solidi A 206, 773 (2009)

DOI: 10.1002/pssa.200881406

 

 

Triple-twin domains in Mg doped GaN wurtzite nanowires: structural and electronic properties of this zinc-blende-like stacking

Jordi Arbiol, Sònia Estradé, Joan D Prades, Albert Cirera, Florian Furtmayr, Christoph Stark, Andreas Laufer, Martin Stutzmann, Martin Eickhoff, Mhairi H Gass, Andrew L Bleloch, Francesca Peiró, Joan R Morante

Nanotechnology 20, 145704 (2009)

DOI: 10.1088/0957-4484/20/14/145704

 

 

GaN quantum dots as optical transducers for chemical sensors

O. Weidemann, P. K. Kandaswamy, E. Monroy, G. Jegert, M. Stutzmann, M. Eickhoff

Applied Physics Letters 94, 113108 (2009)

DOI: 10.1063/1.3100301

 

 

Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy

Thomas A. Wassner, Bernhard Laumer, Stefan Maier, Andreas Laufer, Bruno K. Meyer, Martin Stutzmann, Martin Eickhoff

Journal of Applied Physics 105, 023505 (2009)

DOI: 10.1063/1.3065535

 

 

GaN/AlN Axial Multi Quantum Well Nanowires for Optoelectronic Devices

S. Conesa-Boj, J. Arbiol, F. Furtmayr, C. Stark, S. Schäfer, M. Stutzmann, M. Eickhoff, F. Peiro, J. R. Morante

Proceedings of the 2009 Spanish Conference on Electron Devices

DOI: 10.1109/SCED.2009.4800430

 

2008

 

Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

Florian Furtmayr, Martin Vielemeyer, Martin Stutzmann, Jordi Arbiol, Sònia Estradé, Francesca Peirò, Joan Ramon Morante, Martin Eickhoff

Journal of Applied Physics 104, 034309 (2008)

DOI: 10.1063/1.2953087

 

 

Gas sensing properties of hydrogen-terminated diamond

A. Helwig, G. Müller, J. A. Garrido, M. Eickhoff

Sensors and Actuators B: Chemical 133, 156 (2008)

DOI: 10.1016/j.snb.2008.02.007

 

 

Functionalization of 6H-SiC surfaces with organosilanes

S. J. Schoell, M. Hoeb, I. D. Sharp, W. Steins, M. Eickhoff, M. Stutzmann, M. S. Brandt

Applied Physics Letters 92, 153301 (2008)

DOI: 10.1063/1.2908871

 

 

The Surface Conductivity at the Diamond/Aqueous Electrolyte Interface

Jose A. Garrido, Andreas Härtl, Markus Dankerl, Andreas Reitinger, Martin Eickhoff, Andreas Helwig, Gerhard Müller, Martin Stutzmann

Journal of the American Chemical Society 130, 4177 (2008)

DOI: 10.1021/ja078207g

 

 

Field Test of Water-Steam Separators for Direct Steam Generation in Parabolic Troughs

Markus Eck, Holger Schmidt, Martin Eickhoff, Tobias Hirsch

Journal of Solar Energy Engineering 130, 011002 (2007)

DOI: 10.1115/1.2804619

 

 

A novel GaN‐based multiparameter sensor system for biochemical analysis

B. Lübbers, G. Kittler, P. Ort, S. Linkohr, D. Wegener, B. Baur, M. Gebinoga, F. Weise, M. Eickhoff, S. Maroldt, A. Schober, O. Ambacher

Physica Status Solidi C 5, 2361 (2007)

DOI: 10.1002/pssc.200778726

 

 

Optical properties of Si- and Mg-doped gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy

Florian Furtmayr, Martin Vielemeyer, Martin Stutzmann, Andreas Laufer, Bruno K. Meyer, Martin Eickhoff

Journal of Applied Physics 104, 074309 (2008)

DOI: 10.1063/1.2980341

 

2007

 

Dissociative Gas Sensing at Metal Oxide Surfaces

Andreas Helwig, Gerhard Muller, Martin Eickhoff, Giorgio Sberveglieri

IEEE Sensors Journal 7, 1675 (2007)

DOI: 10.1109/JSEN.2007.909428

 

 

Gas Sensing Interactions at Hydrogenated Diamond Surfaces

Andreas Helwig, Gerhard Muller, Olaf Weidemann, Andreas Hartl, Jose Antonio Garrido, Martin Eickhoff

IEEE Sensors Journal 7, 1349 (2007)

DOI: 10.1109/JSEN.2007.905019

 

 

Stark shift of interband transitions in AlN/GaN superlattices

C. Buchheim, R. Goldhahn, A. T. Winzer, G. Gobsch, U. Rossow, D. Fuhrmann, A. Hangleiter, F. Furtmayr, M. Eickhoff

Applied Physics Letters 90, 241906 (2007)

DOI: 10.1063/1.2748313

 

 

Selective etching of AlInN/GaN heterostructures for MEMS technology

E. Sillero, D. López-Romero, F. Calle, M. Eickhoff, J. F. Carlin, N. Grandjean, M. Ilegems

Microelectronic Engineering 84, 1152 (2007)

DOI: 10.1016/j.mee.2007.01.150

 

 

Modulation spectroscopy of AlGaN/GaN heterostructures: The influence of electron–hole interaction

R. Goldhahn, A. T. Winzer, A. Dadgar, A. Krost, O. Weidemann, M. Eickhoff

Physica Status Solidi A 204, 447 (2007)

DOI: 10.1002/pssa.200673964

 

 

GaN Quantum Dots as Optical Transducers in Field Effect Chemical Sensors

O. Weidemann, G. Jegert, S. Birner, M. Stutzmann, M. Eickhoff

Sensors, 2007 IEEE 1-3, 1175 (2007)

DOI: 10.1109/ICSENS.2007.4388617

 

 

Fully unstrained GaN on sacrificial AlN layers by nano‐heteroepitaxy

K. Tonisch, V. Cimalla, F. Niebelschütz, H. Romanus, M. Eickhoff, O. Ambacher

Physica Status Solidi C 4, 2248 (2007)

DOI: 10.1002/pssc.200674813

 

 

Fabrication of freestanding GaN microstructures using AlN sacrificial layers

E. Zaus, M. Hermann, M. Stutzmann, M. Eickhoff

Physica Status Solidi Rapid Research Letters 1, R10 (2007)

DOI: 10.1002/pssr.200600063

 

2006

 

Impact of silicon incorporation on the formation of structural defects in AlN

M. Hermann, F. Furtmayr, F. M. Morales, O. Ambacher, M. Stutzmann, M. Eickhoff

Journal of Applied Physics 100, 113531 (2006)

DOI: 10.1063/1.2363239

 

 

Direct biofunctionalization of semiconductors: A survey

Martin Stutzmann, Jose Antonio Garrido, Martin Eickhoff, Martin S. Brandt

Physica Status Solidi A 203, 3424 (2006)

DOI: 10.1002/pssa.200622512

 

 

Catalytic activity of enzymes immobilized on AlGaN/GaN solution gate field-effect transistors

B. Baur, J. Howgate, H.-G. von Ribbeck, Y. Gawlina, V. Bandalo, G. Steinhoff, M. Stutzmann, M. Eickhoff

Applied Physics Letters 89, 183901 (2006)

DOI: 10.1063/1.2369534

 

 

Nearly stress-free substrates for GaN homoepitaxy

M. Hermann, D. Gogova, D. Siche, M. Schmidbauer, B. Monemar, M. Stutzmann, M. Eickhoff

Journal of Crystal Growth 293, 462 (2006)

DOI: 10.1016/j.jcrysgro.2006.05.058

 

 

Erratum: Recording of cell action potentials with AlGaN/GaN field-effect transistors [Appl. Phys. Lett. 86, 033901 (2005)]

Georg Steinhoff, Barbara Baur, Günter Wrobel, Sven Ingebrandt, Andreas Offenhäusser, Armin Dadgar, Alois Krost, Martin Stutzmann, Martin Eickhoff

Applied Physics Letters 89, 019901 (2006)

DOI: 10.1063/1.2219129

 

 

New Materials for Chemical and Biosensors

A. Lloyd Spetz, S. Nakagomi, H. Wingbrant, M. Andersson, A. Salomonsson, S. Roy, G. Wingqvist, I. Katardjiev, M. Eickhoff, K. Uvdal, R. Yakimova

Materials and Manufacturing Processes 21, 253 (2006)

DOI: 10.1080/10426910500464495

 

 

Luminescence properties of highly Si-doped AlN

E. Monroy, J. Zenneck, G. Cherkashinin, O. Ambacher, M. Hermann, M. Stutzmann, M. Eickhoff

Applied Physics Letters 88, 071906 (2006)

DOI: 10.1063/1.2173622

 

 

Electroreflectance spectroscopy of Pt/AlGaN/GaN heterostructures exposed to gaseous hydrogen

A. T. Winzer, R. Goldhahn, G. Gobsch, A. Dadgar, A. Krost, O. Weidemann, M. Stutzmann, M. Eickhoff

Applied Physics Letters 88, 024101 (2006)

DOI: 10.1063/1.2161394

 

2005

 

Chemical functionalization of GaN and AlN surfaces

B. Baur, G. Steinhoff, J. Hernando, O. Purrucker, M. Tanaka, B. Nickel, M. Stutzmann, M. Eickhoff

Applied Physics Letters 87, 263901 (2005)

DOI: 10.1063/1.2150280

 

 

Electrochemical stabilization of crystalline silicon with aromatic self‐assembled monolayers in aqueous electrolytes

Murat Tutus, Oliver Purrucker, Klaus Adlkofer, Martin Eickhoff, Motomu Tanaka

Physica Status Solidi B 242, 2838 (2005)

DOI: 10.1002/pssb.200541263

 

 

Highly Si-doped AlN grown by plasma-assisted molecular-beam epitaxy

M. Hermann, F. Furtmayr, A. Bergmaier, G. Dollinger, M. Stutzmann, M. Eickhoff

Applied Physics Letters 86, 192108 (2005)

DOI: 10.1063/1.1923180

 

 

Determination of the polarization discontinuity at the AlGaN/GaN interface by electroreflectance spectroscopy

A. T. Winzer, R. Goldhahn, G. Gobsch, A. Link, M. Eickhoff, U. Rossow, A. Hangleiter

Applied Physics Letters 86, 181912 (2005)

DOI: 10.1063/1.1923748

 

 

Mn-rich clusters in GaN: Hexagonal or cubic symmetry?

G. Martínez-Criado, A. Somogyi, S. Ramos, J. Campo, R. Tucoulou, M. Salome, J. Susin, M. Hermann, M. Eickhoff, M. Stutzmann

Applied Physics Letters 86, 131927 (2005)

DOI: 10.1063/1.1886908

 

 

Influence of thermal oxidation on the electronic properties of Pt Schottky contacts on GaN grown by molecular-beam epitaxy

O. Weidemann, E. Monroy, E. Hahn, M. Stutzmann, M. Eickhoff

Applied Physics Letters 86, 083507 (2005)

DOI: 10.1063/1.1868863

 

 

Recording of cell action potentials with AlGaN/GaN field-effect transistors

Georg Steinhoff, Barbara Baur, Günter Wrobel, Sven Ingebrandt, Andreas Offenhäusser, Armin Dadgar, Alois Krost, Martin Stutzmann, Martin Eickhoff

Applied Physics Letters 86, 033901 (2005)

DOI: 10.1063/1.1853531

 

 

AlGaN/GaN Electrolyte-Gate Field-Effect Transistors as Transducers for Bioelectronic Devices

Georg Steinhoff, Barbara Baur, Hans-Georg von Ribbeck, Günter Wrobel, Sven Ingebrandt, Andreas Offenhäusser, Martin Stutzmann, Martin Eickhoff

Advances in Solid State Physics 45, 363 (2005)

DOI: 10.1007/11423256_29

 

 

Phase transition by Mg doping of N‐face polarity GaN

E. Sarigiannidou, E. Monroy, M. Hermann, T. Andreev, P. Holliger, S. Monnoye, H. Mank, B. Daudin, M. Eickhoff

Physica Status Solidi C 2, 2216 (2005)

DOI: 10.1002/pssc.200461429

 

2004

 

Structural and interface properties of an AlN diamond ultraviolet light emitting diode

C. R. Miskys, J. A. Garrido, M. Hermann, M. Eickhoff, C. E. Nebel, M. Stutzmann, G. Vogg

Applied Physics Letters 85, 3699 (2004)

DOI: 10.1063/1.1811382

 

 

Polytype transition of N-face GaN:Mg from wurtzite to zinc-blende

E. Monroy, M. Hermann, E. Sarigiannidou, T. Andreev, P. Holliger, S. Monnoye, H. Mank, B. Daudin, M. Eickhoff

Journal of Applied Physics 96, 3709 (2004)

DOI: 10.1063/1.1787142

 

 

Anisotropic propagation of surface acoustic waves on nitride layers

J. Pedrós, F. Calle, J. Grajal, R. J. Jiménez Riobóo, C. Prieto, J. L. Pau, J. Pereiro, M. Hermann, M. Eickhoff, Z. Bougrioua

Superlattices and Microstructures 36, 815 (2004)

DOI: 10.1016/j.spmi.2004.09.044

 

 

Electron injection-induced effects in Mn-doped GaN

William Burdett, Olena Lopatiuk, Leonid Chernyak, Martin Hermann, Martin Stutzmann, Martin Eickhoff

Journal of Applied Physics 96, 3556 (2004)

DOI: 10.1063/1.1780606

 

 

Piezoresistive properties of single crystalline, polycrystalline, and nanocrystalline n-type 3C-SiC

M. Eickhoff, M. Möller, G. Kroetz, M. Stutzmann

Journal of Applied Physics 96, 2872 (2004)

DOI: 10.1063/1.1775052

 

 

Influence of crystal defects on the piezoresistive properties of 3C–SiC

M. Eickhoff, M. Stutzmann

Journal of Applied Physics 96, 2878 (2004)

DOI: 10.1063/1.1775043

 

 

High quality heteroepitaxial AlN films on diamond

G. Vogg, C. R. Miskys, J. A. Garrido, M. Hermann, M. Eickhoff, M. Stutzmann

Journal of Applied Physics 96, 895 (2004)

DOI: 10.1063/1.1759088

 

 

Influence of crystal quality on the electronic properties of n-type 3C-SiC grown by low temperature low pressure chemical vapor deposition

M. Eickhoff, H. Möller, J. Stoemenos, S. Zappe, G. Kroetz, M. Stutzmann

Journal of Applied Physics 95, 7908 (2004)

DOI: 10.1063/1.1728311

 

 

Direct Observation of Mn Clusters in GaN by X-ray Scanning Microscopy

Gema Martínez-Criado, Andrea Somogyi, Martin Hermann, Martin Eickhoff, Martin Stutzmann

Japanese Journal of Applied Physics 43, L695 (2004)

DOI: 10.1143/JJAP.43.L695

 

 

Photoreflectance studies of (Al)Ga- and N-face AlGaN/GaN heterostructures

C. Buchheim, A. T. Winzer, R. Goldhahn, G. Gobsch, O. Ambacher, A. Link, M. Eickhoff, M. Stutzmann

Thin Solid Films 450, 155 (2004)

DOI: 10.1016/j.tsf.2003.10.062

 

 

Temperature-dependent electric fields in GaN Schottky diodes studied by electroreflectance

S. Shokhovets, D. Fuhrmann, R. Goldhahn, G. Gobsch, O. Ambacher, M. Hermann, M. Eickhoff

Thin Solid Films 450, 163 (2004)

DOI: 10.1016/j.tsf.2003.10.064

 

 

Improved 3C-SiC Films Epitaxially Grown on Si by Flash Lamp Processing

J. Stoemenos, D. Panknin, M. Eickhoff, V. Heera, W. Skorupa

Journal of the Electrochemical Society 151, G136 (2002)

DOI: 10.1149/1.1639167

 

2003

 

AlxGa1–xN—A New Material System for Biosensors

G. Steinhoff, O. Purrucker, M. Tanaka, M. Stutzmann, M. Eickhoff

Advanced Functional Materials 13, 841 (2003)

DOI: 10.1002/adfm.200304397

 

 

AlN/Diamond np-junctions

Christoph E. Nebel, Claudio R. Miskys, Jose, A. Garrido, Martin Hermann, Oliver Ambacher, Martin Eickhoff, Martin Stutzmann

Diamond and Related Materials 12, 1873 (2003)

DOI: 10.1016/S0925-9635(03)00313-3

 

 

Hydrosilylation of crystalline silicon (111) and hydrogenated amorphous silicon surfaces: A comparative x-ray photoelectron spectroscopy study

A. Lehner, G. Steinhoff, M. S. Brandt, M. Eickhoff, M. Stutzmann

Journal of Applied Physics 94, 2289 (2003)

DOI: 10.1063/1.1593223

 

 

Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes

O. Weidemann, M. Hermann, G. Steinhoff, H. Wingbrant, A. Lloyd Spetz, M. Stutzmann, M. Eickhoff

Applied Physics Letters 83, 773 (2003)

DOI: 10.1063/1.1593794

 

 

pH response of GaN surfaces and its application for pH-sensitive field-effect transistors

G. Steinhoff, M. Hermann, W. J. Schaff, L. F. Eastman, M. Stutzmann , M. Eickhoff

Applied Physics Letters 83, 177 (2003)

DOI: 10.1063/1.1589188

 

 

Exciton quenching in Pt/GaN Schottky diodes with Ga- and N-face polarity

S. Shokhovets, D. Fuhrmann, R. Goldhahn, G. Gobsch, O. Ambacher, M. Hermann, U. Karrer, M. Eickhoff

Applied Physics Letters 82, 1712 (2003)

DOI: 10.1063/1.1561160

 

 

AlN/diamond heterojunction diodes

C. R. Miskys, J. A. Garrido, C. E. Nebel, M. Hermann, O. Ambacher, M. Eickhoff, M. Stutzmann

Applied Physics Letters 82, 290 (2003)

DOI: 10.1063/1.1532545

 

 

Hydrosilylation of silicon surfaces: Crystalline versus amorphous

A. Lehner, G. Steinhoff, M. S. Brandt, M. Eickhoff, M. Stutzmann

Materials Research Society Symposium Proceedings 762, 473 (2003)

 

 

Electroreflectance and photoreflectance studies of electric fields in Pt/GaN Schottky diodes and AlGaN/GaN heterostructures

S. Shokhovets, R. Goldhahn, G. Gobsch, O. Ambacher, I. P. Smorchkova, J. S. Speck, U. Mishra, A. Link, M. Hermann, M. Eickhoff

Materials Research Society Symposium Proceedings 743, 279 (2003)

 

 

Two-dimensional charge carrier systems for chemical sensors: AlGaN/GaN and diamond

M. Stutzmann, J. A. Garrido, M. Eickhoff

Proceedings of the IEEE Sensors 1-2, 1153 (2003)

DOI: 10.1109/ICSENS.2003.1279125

 

2002

 

Gas sensitive GaN/AlGaN-heterostructures

J. Schalwig, G. Müller, M. Eickhoff, O. Ambacher, M. Stutzmann

Sensors and Actuators B: Chemical 87, 425 (2002)

DOI: 10.1016/S0925-4005(02)00292-7

 

 

Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al0.31Ga0.69N

E. Monroy, F. Calle, R. Ranchal, T. Palacios, M. Verdú, F. J. Sánchez, M. T. Montojo, M. Eickhoff, F. Omnès, Z. Bougrioua, I. Moerman

Semiconductor Science and Technology 17, L47 (2002)

DOI: 10.1088/0268-1242/17/9/103

 

 

Observation of ion-induced changes in the channel current of high electron mobility AlGaN/GaN transistors (HEMT)

Ralph Neuberger, Gerhard Müller, Martin Eickhoff, Oliver Ambacher, Martin Stutzmann

Materials Science and Engineering: B 93, 143 (2002)

DOI: 10.1016/S0921-5107(02)00053-3

 

 

Nanotechnology for SAW devices on AlN epilayers

T. Palacios, F. Calle, E. Monroy, J. Grajal, M. Eickhoff, O. Ambacher, C. Prieto

Materials Science and Engineering: B 93, 154 (2002)

DOI: 10.1016/S0921-5107(02)00022-3

 

 

Group III-nitride-based gas sensors for combustion monitoring

J. Schalwig, G. Müller, M. Eickhoff, O. Ambacher, M. Stutzmann

Materials Science and Engineering: B 93, 207 (2002)

DOI: 10.1016/S0921-5107(02)00050-8

 

 

Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, L. F. Eastman

Journal of Physics: Condensed Matter 14, 3399 (2002)

DOI: 10.1088/0953-8984/14/13/302

 

 

Thermoresistive and Piezoresistive Properties of Wurtzite N–GaN

S. Mingiacchi, P. Lugli, A. Bonfiglio, G. Conte, M. Eickhoff, O. Ambacher, A. Rizzi, A. Passaseo, P. Visconti, R. Cingolani

Physica Status Solidi A 190, 281 (2002)

DOI: 10.1002/1521-396X(200203)190:1%3C281::AID-PSSA281%3E3.0.CO;2-U

 

 

GaN-based heterostructures for sensor applications

M. Stutzmann, G. Steinhoff, M. Eickhoff, O. Ambacher, C. E. Nebel, J. Schalwig, R. Neuberger, G. Müller

Diamond and Related Materials 11, 886 (2002)

DOI: 10.1016/S0925-9635(02)00026-2

 

 

Hydrogen response mechanism of Pt–GaN Schottky diodes

J. Schalwig, G. Müller, U. Karrer, M. Eickhoff, O. Ambacher, M. Stutzmann, L. Görgens, G. Dollinger

Applied Physics Letters 80, 1222 (2002)

DOI: 10.1063/1.1450044

 

 

Group III-nitride devices for field effect based gas detection

M. Eickhoff, J. Schalwig, O. Weidemann, L. Gorgens, G. Muller, M. Stutzmann

IEEE Semiconducting and Semi-Insulating Materials Conference, 64 (2002)

 

 

High frequency SAW devices on AlGaN: fabrication, characterization and integration with optoelectronics

T. Palacios, F. Calle, J. Grajal, E. Monroy, M. Eickhoff, O. Ambacher, F. Omnes

Proceedings of the IEEE Ultrasonics Symposium 1-2, 57 (2002)

 

 

Novel sensor applications of group-III nitrides

M. Eickhoff, O. Ambacher, G. Steinhoff, J. Schalwig, R. Neuberger, T. Palacios, E. Monroy, F. Calle, G. Muller, M. Stutzmann

Materials Research Society Symposium Proceedings 693, 781 (2002)

 

 

High-resolution XRD investigations of the strain reduction in 3C-SiC thin films grown on Si(111) substrates

P. Weih, V. Cimalla, C. Forster, J. Pezoldt, T. Stauden, L. Spiess, H. Romanus, M. Hermann, M. Eickhoff, P. Masri, O. Ambacher

Materials Science Forum 433-4, 233 (2002)

 

 

Electronics and sensors based on pyroelectrc AlGaN/GaN heterostructures

O. Ambacher, M. Eickhoff, G. Steinhoff, M. Hermann, L. Gorgens, V. Weiss, B. Baur, M. Stutzmann, R. Neuberger, J. Schalwig, G. Muller, V. Tilak, B. Green, B. Schaff, L. F. Eastman, F. Bernardini, V. Fiorentini

Electrochemical Society Series 2002, 335 (2002)

 

2001

 

The beneficial role of flash lamp annealing on the epitaxial growth of the 3C–SiC on Si

D. Panknin, J. Stoemenos, M. Eickhoff, V. Heera, M. Voelskow, W. Skorupa

Applied Surface Science 184, 377 (2001)

DOI: 10.1016/S0169-4332(01)00521-9

 

 

Playing with Polarity

M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. J. Schuck, R. D. Grober

Physica Status Solidi B 228, 505 (2001)

DOI: 10.1002/1521-3951(200111)228:2<505::AID-PSSB505>3.0.CO;2-U

 

 

Wetting Behaviour of GaN Surfaces with Ga‐ or N‐Face Polarity

M. Eickhoff, R. Neuberger, G. Steinhoff, O. Ambacher, G. Müller, M. Stutzmann

Physica Status Solidi B 228, 519 (2001)

DOI: 10.1002/1521-3951(200111)228:2<519::AID-PSSB519>3.0.CO;2-A

 

 

Etching characteristics and mechanical properties of a-SiC:H thin films

U. Schmid, M. Eickhoff, Ch. Richter, G. Krötz, D. Schmitt-Landsiedel

Sensors and Actuators A: Physical 94, 87 (2001)

DOI: 10.1016/S0924-4247(01)00691-4

 

 

Piezoresistivity of AlxGa1−xN layers and AlxGa1−xN/GaN heterostructures

M. Eickhoff, O. Ambacher, G. Krötz, M. Stutzmann

Journal of Applied Physics 90, 3383 (2001)

DOI: 10.1063/1.1398602

 

 

A highly stable SiC based microhotplate NO2 gas-sensor

F. Solzbacher, C. Imawan, H. Steffes, E. Obermeier, M. Eickhoff

Sensors and Actuators B: Chemical 78, 216 (2001)

DOI: 10.1016/S0925-4005(01)00815-2

 

 

A new SiC/HfB2 based low power gas sensor

F. Solzbacher, C. Imawan, H. Steffes, E. Obermeier, M. Eickhoff

Sensors and Actuators B: Chemical 77, 111 (2001)

DOI: 10.1016/S0925-4005(01)00681-5

 

 

Oxidation Dependence on Defect Density in 3C-SiC Films

M. Eickhoff, N. Vouroutzis, A. Nielsen, G. Krötz, J. Stoemenos

Journal of the Electrochemical Society 148, G336 (2001)

DOI: 10.1149/1.1370972

 

 

Suppression of Si Cavities at the SiC/Si Interface during Epitaxial Growth of 3C-SiC on Silicon-on-Insulator

H. Möller, G. Krötz, M. Eickhoff, A. Nielsen, V. Papaioannou, J. Stoemenos

Journal of the Electrochemical Society 148, G16 (2001)

DOI: 10.1149/1.1344557

 

 

Strain and strain relaxation in SOI materials

J. Camassel, N. Planes, L. Falkovski, H. Moller, M. Eickhoff, G. Krotz

Electrochemical Society Series 99, 40 (2001)

 

 

Improvement of the 3C-SiC/Si interface by flash lamp annealing

D. Panknin, J. Stoemenos, M. Eickhoff, V. Heera, N. Vouroutzis, G. Krötz, Wolfgang Skorupa

Materials Science Forum 353, 151 (2001)

DOI: 10.4028/www.scientific.net/MSF.353-356.151

 

 

Selective Deposition of 3C-SiC Epitaxially Grown on SOI Subtrates

M. Eickhoff, S. Zappe, A. Nielsen, G. Krötz, E. Obermeier, N. Vouroutzis, J. Stoemenos

Materials Science Forum 353, 175 (2001)

DOI: 10.4028/www.scientific.net/MSF.353-356.175

 

 

Dependence of Wet Oxidation on the Defect Density in 3C-SiC

M. Eickhoff, N. Vouroutzis, A. Nielsen, G. Krötz, J. Stoemenos

Materials Science Forum 353, 663 (2001)

DOI: 10.4028/www.scientific.net/MSF.353-356.663

 

 

High Temperature 10 Bar Pressure Sensor Based on 3C-SiC/SOI for Turbine Control Applications

S. Zappe, J. Franklin, E. Obermeier, M. Eickhoff, H. Möller, G. Krötz, C. Rougeot, O. Lefort, J. Stoemenos

Materials Science Forum 353, 753 (2001)

DOI: 10.4028/www.scientific.net/MSF.353-356.753

 

2000

 

Structural Characteristics of 3C-SiC Films Epitaxially Grown on the Si/Si3N4/SiO2 System

S. Zappe, H. Möller, G. Krötz, M. Eickhoff, Wolfgang Skorupa, E. Obermeier, J. Stoemenos

Materials Science Forum 338, 529 (2000)

DOI: 10.4028/www.scientific.net/MSF.338-342.529

 

 

SOL Thinning Effects on 3C-SiC on SOI

N. Planes, H. Möller, Jean Camassel, Y. Stoimenos, L. Falkovski, M. Eickhoff, G. Krötz

Materials Science Forum 338, 301 (2000)

DOI: 10.4028/www.scientific.net/MSF.338-342.301

 

1999 und davor

 

Heteroepitaxial growth of 3C-SiC on SOI for sensor applications

G. Krötz, H. Möller, M. Eickhoff, S. Zappe, R. Ziermann, E. Obermeier, J. Stoemenos

Materials Science and Engineering: B 61, 516 (1999)

DOI: 10.1016/S0921-5107(98)00464-4

 

 

The evolution of cavities in Si at the 3C-SiC/Si interface during 3C-SiC deposition by LPCVD

V. Papaioannou, H. Möller, M. Rapp, L. Vogelmeier, M. Eickhoff, G. Krötz, J. Stoemenos

Materials Science and Engineering: B 61, 539 (1999)

DOI: 10.1016/S0921-5107(98)00469-3

 

 

Influence of the silicon overlayer thickness of SOI unibond substrates on β-SIC heteroepitaxy

H. Möller, M. Eickhoff, L. Vogelmeier, M. Rapp, G. Krötz, V. Papaioannou, J. Stoemenos

Materials Science and Engineering: B 61, 567 (1999)

DOI: 10.1016/S0921-5107(98)00475-9

 

 

High temperature piezoresistive β-SiC-on-SOI pressure sensor with on chip SiC thermistor

R. Ziermann, J. von Berg, E. Obermeier, F. Wischmeyer, E. Niemann, H. Möller, M. Eickhoff, G. Krötz

Materials Science and Engineering: B 61, 576 (1999)

DOI: 10.1016/S0921-5107(98)00477-2

 

 

SOL thickness dependence of residual strain in SOI material

J. Camassel, N. Planes, L. Falkovsky, H. Moller, M. Eickhoff, G. Krotz

Electronic Letters 35, 1284 (1999)

DOI: 10.1049/el:19990868

 

 

Selective growth of high-quality 3C-SiC using a SiO2 sacrificial-layer technique

M. Eickhoff, H. Möller, M. Rapp, G. Kroetz

Thin Solid Films 345, 197 (1999)

DOI: 10.1016/S0040-6090(99)00233-3

 

 

A high temperature pressure sensor prepared by selective deposition of cubic silicon carbide on SOI substrates

M. Eickhoff, H. Möller, G. Kroetz, J. v. Berg, R. Ziermann

Sensors and Actuators A: Physical 74, 56 (1999)

DOI: 10.1016/S0924-4247(98)00302-1

 

 

Silicon compatible materials for harsh environment sensors

Gerhard H. Kroetz, Martin H. Eickhoff, Helmut Moeller

Sensors and Actuators A: Physical 74, 182 (1999)

DOI: 10.1016/S0924-4247(98)00296-9

 

 

High quality β-SiC films obtained by low-temperature heteroepitaxy combined with a fast carbonization step

H. Möller, M. Eickhoff, M. Rapp, H. W. Grueninger, G. Krötz,

Applied Physics A 68, 461 (1999)

DOI: 10.1007/s003390050924

 

 

Measurement of the cylinder pressure in combustion engines with a piezoresistive /spl beta/-SiC-on-SOI pressure sensor

J. von Berg, R. Ziermann, W. Reichert, E. Obermeier, M. Eickhoff, G. Krotz, U. Thoma, C. Cavalloni, J. P. Nendza

IEEE 1998 Fourth International High Temperature Electronics Conference, 245 (1998)

DOI: 10.1109/HITEC.1998.676796

 

 

High Temperature Piezoresistive β-SiC-on-SOI Pressure Sensor for Combustion Engines

J. von Berg, R. Ziermann, W. Reichert, E. Obermeier, M. Eickhoff, G. Krötz, U. Thoma, Th. Boltshauser, C. Cavalloni, J. P. Nendza

Materials Science Forum 264, 1101 (1998)

DOI: 10.4028/www.scientific.net/MSF.264-268.1101

 

 

Rapid plasma etching of cubic SiC using NF3/O2 gas mixtures

Christoph Richter, Klaus Espertshuber, Christoph Wagner, Martin Eickhoff, Gerhard Krötz

Materials Science and Engineering: B 46, 160 (1997)

DOI: 10.1016/S0921-5107(96)01969-1

 

 

A high temperature pressure sensor with beta-SiC piezoresistors on SOI substrates

R. Ziermann, J. von Berg, W. Reichert, E. Obermeier, M. Eickhoff, G. Krotz

IEEE Transducers 1-2, 1411 (1997)

 

 

The influence of crystal quality on the piezoresistive effect of beta-SiC between RT and 450 degrees C measured by using microstructures

J. Strass, M. Eickhoff, G. Kroetz

IEEE Transducers 1-2, 1439 (1997)