Universität Bremen - Publikationen AG Eickhoff

60 Universität Bremen - Publikationen AG Eickhoff https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff Publikationen der Arbeitsgruppe Eickhoff de Universität Bremen Wed, 15 Jul 2026 19:33:51 +0200 Wed, 15 Jul 2026 19:33:51 +0200 Universität Bremen content-213801 Fri, 10 Apr 2026 11:03:26 +0200 Liste der Veröffentlichungen https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff#c213801 <h4>Gehe zu</h4> <h4><a class="internal-link" href="t3://page?uid=22347#720618">2026</a> &nbsp;<a class="internalLink" href="t3://page?uid=22347#630061" title="Öffnet internen Link in aktuellem Fenster">2025</a>&nbsp; <a class="internalLink" href="t3://page?uid=22347#572614" title="Öffnet internen Link in aktuellem Fenster">2024</a>&nbsp; <a class="internalLink" href="t3://page?uid=22347#514155" title="Öffnet internen Link in aktuellem Fenster">2023</a>&nbsp; <a class="internalLink" href="t3://page?uid=22347#445270" title="Öffnet internen Link in aktuellem Fenster">2022</a>&nbsp; <a class="internalLink" href="t3://page?uid=22347#315070" target="_blank">2021</a>&nbsp; <a class="internalLink" href="t3://page?uid=22347#220699" title="Öffnet internen Link in aktuellem Fenster">2020</a>&nbsp; <a class="internalLink" href="t3://page?uid=22347#234828" title="Öffnet internen Link in aktuellem Fenster">2019</a>&nbsp; <a class="internalLink" href="t3://page?uid=22347#164056" title="Öffnet internen Link in aktuellem Fenster">2018</a>&nbsp; <a class="internalLink" href="t3://page?uid=22347#164057" title="Öffnet internen Link in aktuellem Fenster">2017</a>&nbsp; <a class="internalLink" href="t3://page?uid=22347#164094" title="Öffnet internen Link in aktuellem Fenster">2016</a>&nbsp; <a class="internalLink" href="t3://page?uid=22347#164189" title="Öffnet internen Link in aktuellem Fenster">2015</a>&nbsp; <a class="internalLink" href="t3://page?uid=22347#164222" title="Öffnet internen Link in aktuellem Fenster">2014</a>&nbsp; <a class="internalLink" href="t3://page?uid=22347#164223" title="Öffnet internen Link in aktuellem Fenster">2013</a>&nbsp; <a class="internalLink" href="t3://page?uid=22347#166022" title="Öffnet internen Link in aktuellem Fenster">2012</a>&nbsp; <a class="internalLink" href="t3://page?uid=22347#194133" title="Öffnet internen Link in aktuellem Fenster">2011</a>&nbsp; <a class="internalLink" href="t3://page?uid=22347#194137" title="Öffnet internen Link in aktuellem Fenster">2010</a>&nbsp; <a class="internalLink" href="t3://page?uid=22347#194264" title="Öffnet internen Link in aktuellem Fenster">2009</a>&nbsp; <a class="internalLink" href="t3://page?uid=22347#194266" title="Öffnet internen Link in aktuellem Fenster">2008</a>&nbsp; <a class="internalLink" href="t3://page?uid=22347#194267" title="Öffnet internen Link in aktuellem Fenster">2007</a>&nbsp; <a class="internalLink" href="t3://page?uid=22347#194268" title="Öffnet internen Link in aktuellem Fenster">2006</a>&nbsp; <a class="internalLink" href="t3://page?uid=22347#194269" title="Öffnet internen Link in aktuellem Fenster">2005</a>&nbsp; <a class="internalLink" href="t3://page?uid=22347#194270" title="Öffnet internen Link in aktuellem Fenster">2004</a>&nbsp; <a class="internalLink" href="t3://page?uid=22347#194271" title="Öffnet internen Link in aktuellem Fenster">2003</a>&nbsp; <a class="internalLink" href="t3://page?uid=22347#194272" title="Öffnet internen Link in aktuellem Fenster">2002</a>&nbsp; <a class="internalLink" href="t3://page?uid=22347#194273" title="Öffnet internen Link in aktuellem Fenster">2001</a>&nbsp; <a class="internalLink" href="t3://page?uid=22347#194274" title="Öffnet internen Link in aktuellem Fenster">2000</a>&nbsp; <a class="internalLink" href="t3://page?uid=22347#194932" title="Öffnet internen Link in aktuellem Fenster">1999 und davor</a></h4> Content content-720618 Mon, 22 Jun 2026 15:21:35 +0200 2026 https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff#c720618 <figure class="table"><table><tbody><tr><td>&nbsp;Control of composition and atomic distribution in ternary molybdenum tungsten disulfide monolayers by sub-atomic layer depositionChristian Tessarek, Christian Petersen, Tim Grieb, Florian F. Krause, Niels Osterloh, Christian Habben, Andreas Rosenauer, Martin Eickhoffnpj 2D Materials and Applications 10, 69 (2026)<a class="external-link" href="https://doi.org/10.1038/s41699-026-00710-4" target="_blank">DOI: 10.1038/s41699-026-00710-4</a>&nbsp;</td></tr><tr><td>&nbsp;Direct electron transfer of xanthine dehydrogenase at photo-active InGaN nanowiresG. Göbel, G. Steingelb, H. Nell, R. Hölzel, S. Leimkühler, M. Eickhoff, F. LisdatElectrochemistry Communications 189, 108182 (2026)<a class="external-link" href="https://doi.org/10.1016/j.elecom.2026.108182" target="_blank">DOI: 10.1016/j.elecom.2026.108182</a>&nbsp;</td></tr><tr><td>&nbsp;Absorption of orthorhombic multi-domain κ-(InxGa1−x)2O3: bandgap energies by an anisotropic analysisElias Kluth, Alexander Karg, Martin Eickhoff, Rüdiger Goldhahn, Martin FenebergJapanese Journal of Applied Physics 65, 031003 (2026)<a class="external-link" href="https://doi.org/10.35848/1347-4065/ae3bc3" target="_blank">DOI: 10.35848/1347-4065/ae3bc3</a>&nbsp;</td></tr></tbody></table></figure> Content content-630060 Thu, 05 Mar 2026 17:50:19 +0100 2025 https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff#c630060 <figure class="table"><table><tbody><tr><td>&nbsp;Patent: Verfahren zur kontrollierten Abdünnung eines mehrlagigen van-der-Waals SchichtsystemsChristian Tessarek, Martin EickhoffDeutsches Patent- und Markenamt, Patent Nr. 102019002329<a class="external-link" href="https://register.dpma.de/DPMAregister/pat/register?AKZ=1020190023293" target="_blank">https://register.dpma.de/DPMAregister/pat/register?AKZ=1020190023293</a>&nbsp;</td></tr><tr><td>&nbsp;Lattice parameters and elastic properties for strain analysis in κ-(InxGa1−x)2O3/κ-Ga2O3/Al2O3 heterostructures from density functional theory, x-ray diffraction, and scanning precession nanobeam electron diffractionMarco Schowalter, Alexander Karg, Florian F. Krause, Manuel Alonso-Orts, Sushma Raghuvansy, Martin S. Williams, Tim Grieb, Christoph Mahr, Thorsten Mehrtens, Martin Eickhoff, Andreas RosenauerJournal of Applied Physics 138, 115106 (2025)<a class="external-link" href="https://doi.org/10.1063/5.0293610" target="_blank">DOI: 10.1063/5.0293610</a>&nbsp;</td></tr><tr><td>&nbsp;Confined-space annealing of 2D transition metal dichalcogenides: Improving properties, material reorganization, and chalcogen exchangeChristian Tessarek, Christian Petersen, Tim Grieb, Florian F. Krause, Alexander Karg, Christian Habben, Andreas Rosenauer, Martin EickhoffAPL Materials 13, 061105 (2025)<a class="external-link" href="https://doi.org/10.1063/5.0250685" title="Öffnet externen Link in neuem Fenster" target="_blank">DOI: 10.1063/5.0250685</a>&nbsp;</td></tr><tr><td>&nbsp;Stark manifold ultraviolet emission in Gd-implanted β-Ga2O3 thin films,Martin S. Williams, Mahmoud Elhajhasan, Marco Schowalter, Lewis Penman, Alexander Karg, Patrick Vogt, Fabien C.-P. Massabuau, Andreas Rosenauer, Gordon Callsen, Carsten Ronning, Martin Eickhoff, Manuel Alonso-OrtsMaterials Today Physics 54, 101731 (2025)<a class="external-link" href="https://doi.org/10.1016/j.mtphys.2025.101731" title="Öffnet externen Link in neuem Fenster" target="_blank">DOI: 10.1016/j.mtphys.2025.101731</a>&nbsp;</td></tr><tr><td>&nbsp;Structural evolution and nucleation dynamics of RF sputtered Ga2O3 films on Ru(0001): The impact of deposition temperature and Ru surface morphologyAman Baunthiyal, Marco Schowalter, Martin Williams, Jon-Olaf Krisponeit, Thorsten Mehrtens, Alexander Karg, Andreas Rosenauer, Martin Eickhoff, Jens FaltaAPL Materials 13, 041130 (2025)<a class="external-link" href="https://doi.org/10.1063/5.0270431" title="Öffnet externen Link in neuem Fenster" target="_blank">DOI: 10.1063/5.0270431</a>&nbsp;</td></tr><tr><td>&nbsp;β-Ga2O3 microwires and nanomembranes for photonicsDaniel Carrasco, Manuel Alonso-Orts, Paula Pérez-Peinado, Ruben J. T. Neelissen, Pedro L. Alcázar, Jaime Dolado, Gema Martínez-Criado, Jorge Quereda, Francisco Domínguez-Adame, Martin Eickhoff, Bianchi Méndez, Emilio Nogales&nbsp;Proceedings Volume 13367, Oxide-based Materials and Devices XVI; 133670I (2025)&nbsp;<a class="external-link" href="https://doi.org/10.1117/12.3043754" target="_blank">DOI: 10.1117/12.3043754</a>&nbsp;</td></tr><tr><td>&nbsp;Accurate and Robust Wide-Range Luminescent Microthermometer Based on ALD-Encapsulated Ga2O3:Cr DBR MicrocavitiesManuel Alonso-Orts,&nbsp;Ruben J. T. Neelissen,&nbsp;Daniel Carrasco,&nbsp;Marco Schowalter,&nbsp;Andreas Rosenauer,&nbsp;Emilio Nogales,&nbsp;Bianchi Méndez,&nbsp;Martin EickhoffAdvanced Materials Technologies 10, 2400881 (2025)<a class="externalLink" href="https://doi.org/10.1002/admt.202400881" title="Öffnet externen Link in neuem Fenster" target="_blank">DOI: 10.1002/admt.202400881</a>&nbsp;</td></tr></tbody></table></figure> Content content-572614 Thu, 28 May 2026 10:38:17 +0200 2024 https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff#c572614 <figure class="table"><table><tbody><tr><td>&nbsp;Composition and strain of the pseudomorphic α-phase intermediate layer at the Ga2O3/Al2O3 interfaceM. Schowalter, A. Karg, M. Alonso-Orts, J. A. Bich, S. Raghuvansy, M. S. Williams, F. F. Krause, T. Grieb, C. Mahr, T. Mehrtens, P. Vogt, A. Rosenauer, M. EickhoffAPL Materials 12, 091104 (2024)<a class="externalLink" href="https://doi.org/10.1063/5.0226857" title="Öffnet externen Link in neuem Fenster" target="_blank">DOI: 10.1063/5.0226857</a>&nbsp;</td></tr><tr><td>&nbsp;Electrochemical Detection of Selective Anion Transport through Subnanopores in Liquid-Crystalline Water Treatment MembranesSven Mehlhose,&nbsp;Takeshi Sakamoto,&nbsp;Martin Eickhoff,&nbsp;Takashi Kato,&nbsp;and&nbsp;Motomu TanakaJournal of Physical Chemistry B 128, 4537 (2024)<a class="externalLink" href="https://doi.org/10.1021/acs.jpcb.4c00047" title="Öffnet externen Link in neuem Fenster" target="_blank">DOI: 10.1021/acs.jpcb.4c00047</a>&nbsp;</td></tr><tr><td>&nbsp;Atomic vs. sub-atomic layer deposition: impact of growth rate on the optical and structural properties of MoS2 and WS2Christian Tessarek, Tim Grieb, Florian F. Krause, Christian Petersen, Alexander Karg, Alexander Hinz, Niels Osterloh, Christian Habben, Stephan Figge, Jon-Olaf Krisponeit, Thomas Schmidt, Jens Falta, Andreas Rosenauer, Martin Eickhoff2D Materials 11, 025031 (2024)<a class="externalLink" href="https://doi.org/10.1088/2053-1583/ad3134" title="Öffnet externen Link in neuem Fenster" target="_blank">DOI: 10.1088/2053-1583/ad3134</a>&nbsp;</td></tr><tr><td>&nbsp;Erratum: Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxySushma Raghuvansy, Jon P. McCandless, Marco Schowalter, Alexander Karg, Manuel Alonso-Orts, Martin S. Williams, Christian Tessarek, Stephan Figge, Kazuki Nomoto, Huili Grace Xing, Darrell G. Schlom, Andreas Rosenauer, Debdeep Jena, Martin Eickhoff, Patrick VogtAPL Materials 12, 019902 (2024)<a class="externalLink" href="https://doi.org/10.1063/5.0192370" title="Öffnet externen Link in neuem Fenster" target="_blank">DOI: 10.1063/5.0192370</a>&nbsp;</td></tr><tr><td>&nbsp;Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3 by molecular beam epitaxyMartin S. Williams, Manuel Alonso-Orts, Marco Schowalter, Alexander Karg, Sushma Raghuvansy, Jon P. McCandless, Debdeep Jena, Andreas Rosenauer, Martin Eickhoff, Patrick VogtAPL Materials 12, 011120 (2024)<a class="externalLink" href="https://doi.org/10.1063/5.0180041" title="Öffnet externen Link in neuem Fenster" target="_blank">DOI: 10.1063/5.0180041</a>&nbsp;</td></tr></tbody></table></figure> Content content-514155 Thu, 05 Mar 2026 17:50:19 +0100 2023 https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff#c514155 <table> <tbody> <tr> <td> &nbsp; Growth and characterization of sputter-deposited Ga2O3-based memristive devices Aman Baunthiyal, Jon-Olaf Krisponeit, Marco Schowalter, Thorsten Mehrtens, Alexander Karg, Andreas Rosenauer, Martin Eickhoff, Jens Falta Applied Physics Letters 123, 213504 (2023) <a class="externalLink" href="https://doi.org/10.1063/5.0170354" target="_blank" title="Öffnet externen Link in neuem Fenster">DOI: 10.1063/5.0170354</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy Sushma Raghuvansy, Jon P. McCandless, Marco Schowalter, Alexander Karg, Manuel Alonso-Orts, Martin S. Williams, Christian Tessarek, Stephan Figge, Kazuki Nomoto, Huili Grace Xing, Darrell G. Schlom, Andreas Rosenauer, Debdeep Jena, Martin Eickhoff, Patrick Vogt APL Materials 11, 111113 (2023) <a class="externalLink" href="https://doi.org/10.1063/5.0174373" target="_blank" title="Öffnet externen Link in neuem Fenster">DOI: 10.1063/5.0174373</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Indium: A surfactant for the growth of ɛ/κ-Ga2O3 by molecular beam epitaxy Alexander Karg, Alexander Hinz, Stephan Figge, Marco Schowalter, Patrick Vogt, Andreas Rosenauer, Martin Eickhoff APL Materials 11, 091114 (2023) <a class="externalLink" href="https://doi.org/10.1063/5.0167736" target="_blank" title="Öffnet externen Link in neuem Fenster">DOI: 10.1063/5.0167736</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Biotic and Abiotic Interactions in Freshwater Mesocosms Determine Fate and Toxicity of CuO Nanoparticles Tonya Gräf,&nbsp;Viviane Koch,&nbsp;Jan Köser,&nbsp;Jonas Fischer,&nbsp;Christian Tessarek,&nbsp;and&nbsp;Juliane Filser Environmental Science &amp; Technology 57, 12376 (2023)&nbsp;&nbsp; &nbsp; <a class="externalLink" href="https://doi.org/10.1021/acs.est.3c00493" target="_blank" title="Öffnet externen Link in neuem Fenster">DOI: 10.1021/acs.est.3c00493</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Nucleation window of Ga2O3 and In2O3 for Molecular Beam Epitaxy on (0001) Al2O3 Alexander Karg, Justin Andreas Bich, Adrian Messow, Marco Schowalter, Stephan Figge, Andreas Rosenauer, Patrick Vogt, Martin Eickhoff Crystal Growth &amp; Design 23, 4435 (2023) <a class="externalLink" href="https://doi.org/10.1021/acs.cgd.3c00193" target="_blank" title="Öffnet externen Link in neuem Fenster">DOI: 10.1021/acs.cgd.3c00193</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Correlative analysis on InGaN/GaN nanowires: structural and optical properties of self-assembled short-period superlattices Manuel Alonso-Orts, Rudolfo Hötzel, Tim Grieb, Matthias Auf der Maur, Maximilian Ries, Felix Nippert, Benjamin März, Knut Müller-Caspary, Markus R. Wagner, Andreas Rosenauer, Martin Eickhoff Discover Nano 18, 27 (2023) <a class="externalLink" href="https://doi.org/10.1186/s11671-023-03808-6" target="_blank" title="Öffnet externen Link in neuem Fenster">DOI: 10.1186/s11671-023-03808-6</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Growth of alpha-Ga2O3 on alpha-Al2O3 by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy J. P. McCandless, D. Rowe, N. Pieczulewski, V. Protasenko, M. Alonso-Orts, M. S. Williams, M. Eickhoff, H. G. Xing, D. A. Muller, D. Jena, P. Vogt Japanese Journal of Applied Physics 62, SF1013 (2023) <a class="externalLink" href="https://doi.org/10.35848/1347-4065/acbe04" target="_blank" title="Öffnet externen Link in neuem Fenster">DOI: 10.35848/1347-4065/acbe04</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Temperature-Dependent Anisotropic Refractive Index in β-Ga2O3: Application in Interferometric Thermometers Daniel Carrasco, Eva Nieto-Pinero, Manuel Alonso-Orts, Rosalía Serna, Jose M. San Juan , María L. Nó, Jani Jesenovec, John S. McCloy, Emilio Nogales, Bianchi Méndez Nanomaterials 13, 1126 (2023) <a class="externalLink" href="https://doi.org/10.3390/nano13061126 " target="_blank" title="Opens external link in new window">DOI: 10.3390/nano13061126 </a> &nbsp; </td> </tr> <tr> <td> &nbsp; Origin of the spectral red-shift and polarization pattersn of self-assembled InGaN nanostructures on GaN nanowires Maximilian Ries, Felix Nippert, Benjamin März, Manuel Alonso-Orts, Tim Grieb, Rudolfo Hötzel, Pascal Hille, Pouria Emtenani, Eser Metin Akinoglu, Eugen Speiser, Julian Plaickner, Jörg Schörmann, Matthias Auf der Maur, Knut Müller-Caspary, Andreas Rosenauer, Norbert Esser, Martin Eickhoff, Markus R. Wagner Nanoscale 15, 7077 (2023) <a class="externalLink" href="https://doi.org/10.1039/d2nr05529e" target="_blank" title="Öffnet externen Link in neuem Fenster">DOI: 10.1039/d2nr05529e</a> &nbsp; </td> </tr> </tbody> </table> Content content-445270 Thu, 05 Mar 2026 17:50:19 +0100 2022 https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff#c445270 <table> <tbody> <tr> <td> &nbsp; Detection of Hydrogen Dissolved in Liquid Media: A Review and Outlook Alejandra Castro-Carranza, Pablo Vega-Hernandez, Jairo C. Nolasco, Anette Ladstätter-Weißenmayer, Martin Eickhoff, Jürgen Gutowski Physica Status Solidi A 219, 2100669 (2022) <a class="externalLink" href="https://doi.org/10.1002/pssa.202100669" target="_blank" title="Öffnet externen Link in neuem Fenster">DOI: 10.1002/pssa.202100669</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Enhanced epitaxial growth of Ga2O3 using an ultrathin SnO2 layer A. Karg, M. Kracht, P. Vogt, A. Messow, N. Braud, J. Schörmann, M. Rohnke, J. Janek, J. Falta, M. Eickhoff Journal of Applied Physics 132, 195304 (2022) <a class="externalLink" href="https://doi.org/10.1063/5.0127232" target="_blank" title="Öffnet externen Link in neuem Fenster">DOI: 10.1063/5.0127232</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Controlled Si doping of β-Ga2O3 by molecular beam epitaxy J. P. McCandless, V. Protasenko, B. W. Morell, E. Steinbrunner, A. T. Neal, N. Tanen, Y. Cho, T. J. Asel, S. Mou, P. Vogt, H. G. Xing, D. Jena Appl. Phys. Lett. 121, 072108 (2022) <a class="externalLink" href="https://doi.org/10.1063/5.0101132" target="_blank" title="Öffnet externen Link in neuem Fenster">DOI: 10.1063/5.0101132</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Ga2O3 microwires as wide dynamical range temperature sensors Manuel Alonso-Orts, Daniel Carrasco, José M. San Juan, María L. Nó, Alicia de Andrés, Emilio Nogales, Bianchi Méndez Proceedings SPIE 12002, Oxide-based Materials and Devices XIII, 120020A (5 March 2022) <a class="externalLink" href="https://doi.org/10.1117/12.2618319" target="_blank" title="Öffnet externen Link in neuem Fenster">DOI: 10.1117/12.2618319</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Streched lignin/polycrylonitrile blended crbon nanofiber as high conductive electrode in electric double layer capacitor Manish Kumar, Shogo Taira, Nutthira Pakkang, Kengo Shigetomi, Yasumitsu Uraki Advances in Natural Sciences: Nanoscience and Nanotechnology 13, 025007 (2022) <a class="externalLink" href="https://doi.org/10.1088/2043-6262/ac7323" target="_blank" title="Öffnet externen Link in neuem Fenster">DOI: 10.1088/2043-6262/ac7323</a> &nbsp; </td> </tr> </tbody> </table> Content content-315069 Thu, 05 Mar 2026 09:46:29 +0100 2021 https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff#c315069 <table> <tbody> <tr> <td> &nbsp; 4D-STEM at interfaces to GaN: Centre-of-mass approach &amp; NBED-disc detection Tim Grieb, Florian F. Krause, Knut Müller-Caspary, Robert Ritz, Martin Simson, Jörg Schörmann, Christoph Mahr, Jan Müßener, Marco Schowalter, Heike Soltau, Martin Eickhoff, Andreas Rosenauer Ultramicroscopy 228, 113321 (2021) <a class="externalLink" href="https://doi.org/10.1016/j.ultramic.2021.113321" target="_blank" title="Öffnet externen Link in neuem Fenster">DOI: 10.1016/j.ultramic.2021.113321</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Surface Microscopy of Atomic and Molecular Hydrogen from Field-Evaporating Semiconductors Lorenzo Rigutti, Enrico Di Russo, Florian Chabanais, Ivan Blum, Jonathan Houard, Noëlle Gogneau, Ludovic Largeau, Alexander Karg, Martin Eickhoff, Williams Lefebvre, François Vurpillot &nbsp; &nbsp;&nbsp; Journal of Physical Chemistry C 125, 17078 (2021) &nbsp; &nbsp;&nbsp; <a class="externalLink" href="https://doi.org/10.1021/acs.jpcc.1c04778" target="_blank" title="Öffnet externen Link in neuem Fenster">DOI: 10.1021/acs.jpcc.1c04778</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Behavior of the ε-Ga2O3:Sn Evaporation During Laser-Assisted Atom Probe Tomography Florian Chabanais, Enrico Di Russo, Alexander Karg, Martin Eickhoff, Williams Lefebvre, Lorenzo Rigutti Microscopy and Microanalysis 27, 687 (2021) <a class="externalLink" href="https://doi.org/10.1017/S1431927621000544" target="_blank" title="Öffnet externen Link in neuem Fenster">DOI: 10.1017/S1431927621000544 </a> &nbsp; </td> </tr> <tr> <td> &nbsp; Free-Standing ZnSe-Based Microdisk Resonators - Influence of Edge Roughness on the Optical Quality and Reducing Degradation with Supported Geometry Wilken Seemann, Alexander Kothe, Christian Tessarek, Gesa Schmidt, Siqi Qiao, Nils von den Driesch, Jan Wiersig, Alexander Pawlis, Gordon Callsen, Jürgen Gutowski Physica Status Solidi B, 2100249 (2021) <a class="externalLink" href="https://doi.org/10.1002/pssb.202100249" target="_blank" title="Öffnet externen Link in neuem Fenster">DOI: 10.1002/pssb.202100249</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Excitons Bound to Defect States in Two-dimensional (2D) MoS2 Oleg Gridenco, Kathrin Sebald, Christian Tessarek, Sven Mehrkens, Martin Eickhoff, Jürgen Gutowski IEEE Transactions on Nanotechnology 20, 400 (2021) <a class="externalLink" href="https://doi.org/10.1109/TNANO.2021.3076574" target="_blank" title="Öffnet externen Link in neuem Fenster">DOI: 10.1109/TNANO.2021.3076574</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Ion compositions in artificial media control the impact of humic acid on colloidal behaviour, dissolution and speciation of CuO-NP Jonas Fischer, Tonya Gräf, Yvonne Sakka, Christian Tessarek, Jan Köser Science of The Total Environment 785, 147241 (2021) <a class="externalLink" href="https://doi.org/10.1016/j.scitotenv.2021.147241" target="_blank" title="Persistent link using digital object identifier">DOI: 10.1016/j.scitotenv.2021.147241</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Comparing co‐catalytic effects of ZrOx, SmOx, and Pt on COx methanation over Co‐based catalysts prepared by double flame spray pyrolysis Jakob Stahl, Jan Ilsemann, Suman Pokhrel, Marco Schowalter, Christian Tessarek, Andreas Rosenauer, Martin Eickhoff, Marcus Bäumer, Lutz Mädler ChemCatChem 13, 2815 (2021) <a class="externalLink" href="https://doi.org/10.1002/cctc.202001998" target="_blank" title="Öffnet externen Link in neuem Fenster">DOI: 10.1002/cctc.202001998</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Near-UV optical cavities in Ga2O3 nanowires Manuel Alonso-Orts, Gerwin Chilla, Rudolfo Hötzel, Emilio Nogales, Jose M. San Juan, Maria L. No, Martin Eickhoff, Bianchi Mendez Optics Letters&nbsp;46, 278 (2021) <a class="externalLink" href="https://doi.org/10.1364/OL.410757" target="_blank"><abbr title="Digital Object Identifier">DOI</abbr>: 10.1364/OL.410757</a> &nbsp; </td> </tr> </tbody> </table> Content content-164055 Wed, 04 Mar 2026 23:43:54 +0100 2020 https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff#c164055 <table> <tbody> <tr> <td> &nbsp; Influence of Polymorphism on the Electronic Structure of Ga2O3 Jack E. N. Swallow, Christian Vorwerk, Piero Mazzolini, Patrick Vogt, Oliver Bierwagen, Alexander Karg, Martin Eickhoff, Jörg Schörmann, Markus R. Wagner, Joseph W. Roberts, Paul R. Chalker, Matthew J. Smiles, Philip Murgatroyd, Sara A. Razek, Zachary W. Lebens-Higgins, Louis F. J. Piper, Leanne A. H. Jones, Pardeep K. Thakur, Tien-Lin Lee, Joel B. Varley, Jürgen Furthmüller, Claudia Draxl, Tim D. Veal, Anna Regoutz Chemistry of Materials 32, 8460, (2020) <a class="externalLink" href="https://doi.org/10.1021/acs.chemmater.0c02465" target="_blank" title="Öffnet externen Link in neuem Fenster">DOI: 10.1021/acs.chemmater.0c02465</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Chapter Eight - Luminescence probing of surface adsorption processes using InGaN/GaN nanowire heterostructure arrays Konrad Maier, Andreas Helwig, Gerhard Müller, Martin Eickhoff Semiconductor Gas Sensors (Second Edition), Woodhead Publishing, 2020, Pages 239-270, ISBN 9780081025598 <a class="externalLink" href="https://doi.org/10.1016/B978-0-08-102559-8.00008-2" target="_blank" title="Öffnet externen Link in neuem Fenster">DOI: 10.1016/B978-0-08-102559-8.00008-2</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Controlled Laser-Thinning of MoS2 Nanolayers and Transformation to Amorphous MoOx for 2D Monolayer Fabrication Christian Tessarek, Oleg Gridenco, Martin Wiesing, Jan Müßener, Stephan Figge, Kathrin Sebald, Jürgen Gutowski, Martin Eickhoff ACS Applied Nano Materials 4, 7490 (2020) <a class="externalLink" href="https://doi.org/10.1021/acsanm.0c01104" target="_blank">DOI: 10.1021/acsanm.0c01104</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Rare Earth-Doped Y4Al2O9 Nanoparticles for Stable Light-Converting Phosphors Chenyang Liu, Suman Pokhrel, Christian Tessarek, Haipeng Li, Marco Schowalter, Andreas Rosenauer, Martin Eickhoff, Lutz Mädler ACS Applied Nano Materials 3, 699 (2020) <a class="externalLink" href="https://doi.org/10.1021/acsanm.9b02231" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="Digital Object Identifier">DOI</abbr>: 10.1021/acsanm.9b02231</a> &nbsp; </td> </tr> </tbody> </table> Content content-234827 Wed, 04 Mar 2026 23:43:54 +0100 2019 https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff#c234827 <table> <tbody> <tr> <td> &nbsp; Consistent description of mesoscopic transport: Case study of current-dependent magnetoconductance in single GaN:Ge nanowires Patrick Uredat, Pascal Hille, Jörg Schörmann, Martin Eickhoff, Peter J. Klar, Matthias T. Elm Physical Review B&nbsp;100, 085409 (2019) <a class="externalLink" href="https://doi.org/10.1103/PhysRevB.100.085409" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1103/PhysRevB.100.085409</a> &nbsp; </td> </tr> <tr> <td> &nbsp; The Role of Polarity in Nonplanar Semiconductor Nanostructures María de la Mata, Reza R. Zamani, Sara Martí-Sánchez, Martin Eickhoff, Qihua Xiong, Anna Fontcuberta i Morral, Philippe Caroff, Jordi Arbiol Nano Letters&nbsp;19, 3396 (2019) <a class="externalLink" href="https://doi.org/10.1021/acs.nanolett.9b00459" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1021/acs.nanolett.9b00459</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Electrical Polarization in AlN/GaN Nanodisks Measured by Momentum-Resolved 4D Scanning Transmission Electron Microscopy Knut Müller-Caspary, Tim Grieb, Jan Müßener, Nicolas Gauquelin, Pascal Hille, Jörg Schörmann, Johan Verbeeck, Sandra Van Aert, Martin Eickhoff, Andreas Rosenauer Physical Review Letters&nbsp;122, 106102 (2019) <a class="externalLink" href="https://doi.org/10.1103/PhysRevLett.122.106102" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1103/PhysRevLett.122.106102</a> &nbsp; </td> </tr> </tbody> </table> Content content-164056 Wed, 04 Mar 2026 23:43:54 +0100 2018 https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff#c164056 <table> <tbody> <tr> <td> &nbsp; Photoluminescence Detection of Surface Oxidation Processes on InGaN/GaN Nanowire Arrays Konrad Maier, Andreas Helwig, Gerhard Müller, Jörg Schörmann, Martin Eickhoff ACS Sensors&nbsp;3, 2254 (2018) <a href="https://pubs.acs.org/doi/10.1021/acssensors.8b00417" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1021/acssensors.8b0041</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Influence of the atom source operating parameters on the structural and optical properties of InxGa1−xN nanowires grown by plasma-assisted molecular beam epitaxy P. Hille, F. Walther, P. Klement, J. Müßener, J. Schörmann, J. Kaupe, S. Mitić, N. W. Rosemann, S. Chatterjee, A. Beyer, K. I. Gries, K. Volz, M. Eickhoff Journal of Applied Physics&nbsp;124, 165703 (2018) <a href="https://doi.org/10.1063/1.5050391" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.5050391</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Optical Analysis of Oxygen Self‐Diffusion in Ultrathin CeO2 Layers at Low Temperatures Paula Neuderth, Pascal Hille, Sara Martí‐Sánchez, María de la Mata, Mariona Coll, Jordi Arbiol, Martin Eickhoff Advanced Energy Materials&nbsp;8, 1802120 (2018) <a class="externalLink" href="https://doi.org/10.1002/aenm.201802120" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1002/aenm.201802120</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Effects of the Fermi level energy on the adsorption of O-2 to monolayer MoS2 Philip Klement, Christina Steinke, Sangam Chatterjee, Tim O. Wehling, Martin Eickhoff 2D Materials&nbsp;5, 045025 (2018) <a class="externalLink" href="https://doi.org/10.1088/2053-1583/aadc24" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1088/2053-1583/aadc24</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Dynamic Extracellular Imaging of Biochemical Cell Activity Using InGaN/GaN Nanowire Arrays as Nanophotonic Probes Sara Hölzel, Mikhail V. Zyuzin, Jens Wallys, Ervice Pouokam, Jan Müßener, Pascal Hille, Martin Diener, Wolfgang J. Parak, Martin Eickhoff Advanced Functional Materials&nbsp;28, 1802503 (2018) <a class="externalLink" href="https://doi.org/10.1002/adfm.201802503" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1002/adfm.201802503</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Anisotropic Optical Properties of Metastable (01(1)over-bar2) α-Ga2O3 Grown by Plasma-Assisted Molecular Beam Epitaxy M. Kracht, A. Karg, M. Feneberg, J. Bläsing, J. Schörmann, R. Goldhahn, M. Eickhoff Physical Review Applied&nbsp;10, 024047 (2018) <a class="externalLink" href="https://doi.org/10.1103/PhysRevApplied.10.024047" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1103/PhysRevApplied.10.024047</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Suppression of the quantum-confined Stark effect in polar nitride heterostructures S. Schlichting, G. M. O. Hönig, J. Müßener, P. Hille, T. Grieb, S. Westerkamp, J. Teubert, J. Schörmann, M. R. Wagner, A. Rosenauer, M. Eickhoff, A. Hoffmann, G. Callsen&nbsp; Communications Physics&nbsp;1, 48 (2018) <a class="externalLink" href="https://doi.org/10.1038/s42005-018-0044-1" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1038/s42005-018-0044-1</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Ion sensitive AlGaN/GaN field-effect transistors with monolithically integrated wheatstone bridge for temperature- and drift compensation in enzymatic biosensors Daniel Stock, Gesche Mareike Müntze, Stephan Figge, Martin Eickhoff Sensors and Actuators B: Chemical&nbsp;263, 20 (2018) <a class="externalLink" href="https://doi.org/10.1016/j.snb.2018.02.068" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object indentifier">DOI</abbr>: 10.1016/j.snb.2018.02.068</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Photoelectrochemical response of GaN, InGaN, and GaNP nanowire ensembles Jan M. Philipps, Sara Hölzel, Pascal Hille, Jörg Schörmann, Sangam Chatterjee, Irina A. Buyanova, Martin Eickhoff, Detlev M. Hofmann Journal of Applied Physics&nbsp;123, 175703 (2018) <a href="https://doi.org/10.1063/1.5024334" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.5024334</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Optical emission of GaN/AlN quantum-wires – the role of charge transfer from a nanowire template Jan Müßener, Ludwig A. Th. Greif, Stefan Kalinowski, Gordon Callsen, Pascal Hille, Jörg Schörmann, Markus R. Wagner, Andrei Schliwa, Sara Martí-Sánchez, Jordi Arbiol, Axel Hoffmann, Martin Eickhoff Nanoscale&nbsp;10, 5591 (2018) <a class="externalLink" href="https://doi.org/10.1039/C7NR08057C" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1039/C7NR08057C</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Synthesis of SnO2 Nanowires Using SnI2 as Precursor and Their Application as High‐Performance Self‐Powered Ultraviolet Photodetectors Jie Jiang, Florian Heck, Detlev M. Hofmann, Martin Eickhoff Physica Status Solidi B&nbsp;255, 1700426 (2018) <a class="externalLink" href="https://doi.org/10.1002/pssb.201700426" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1002/pssb.201700426</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Passivation layers for nanostructured photoanodes: ultra-thin oxides on InGaN nanowires P. Neuderth, P. Hille, J. Schörmann, A. Frank, C. Reitz, S. Martí-Sánchez, M. de la Mata, M. Coll, J. Arbiol, R. Marschall, M. Eickhoff Journal of Materials Chemistry A&nbsp;6, 565 (2018) <a class="externalLink" href="https://doi.org/10.1039/C7TA08071A" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1039/C7TA08071A</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Flexible Modulation of Electronic Band Structures of Wide Band Gap GaN Semiconductors Using Bioinspired, Nonbiological Helical Peptides Sven Mehlhose, Nataliya Frenkel, Hirotaka Uji, Sara Hölzel, Gesche Müntze, Daniel Stock, Silvio Neugebauer, Armin Dadgar, Wasim Abuillan, Martin Eickhoff, Shunsaku Kimura, Motomu Tanaka Advanced Functional Materials&nbsp;28, 1704034 (2018) <a class="externalLink" href="https://doi.org/10.1002/adfm.201704034" target="_blank" title="Öffnet externen Link in neuem Fenster">DOI: 10.1002/adfm.201704034</a> &nbsp; </td> </tr> </tbody> </table> Content content-164057 Wed, 04 Mar 2026 23:43:54 +0100 2017 https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff#c164057 <table> <tbody> <tr> <td> &nbsp; Evidence for nitrogen-related deep acceptor states in SnO2 grown by chemical vapor deposition Jie Jiang, Lars Ostheim, Matthias Kleine-Boymann, Detlev M. Hofmann, Peter J. Klar, Martin Eickhoff Journal of Applied Physics&nbsp;122, 205702 (2017) <a href="https://doi.org/10.1063/1.5000115" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.5000115</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Tin-Assisted Synthesis of ε−Ga2O3 by Molecular Beam Epitaxy M. Kracht, A. Karg, J. Schörmann, M. Weinhold, D. Zink, F. Michel, M. Rohnke, M. Schowalter, B. Gerken, A. Rosenauer, P. J. Klar, J. Janek, M. Eickhoff Physical Review Applied&nbsp;8, 054002 (2017) <a href="https://doi.org/10.1103/PhysRevApplied.8.054002" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1103/PhysRevApplied.8.054002</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Three dimensional reconstruction of InGaN nanodisks in GaN nanowires: Improvement of the nanowire sample preparation to avoid missing wedge effects Katharina Ines Gries, Julian Schlechtweg, Pascal Hille, Jörg Schörmann, Martin Eickhoff, Kerstin Volz Journal of Crystal Growth&nbsp;475, 202 (2017) <a class="externalLink" href="https://doi.org/10.1016/j.jcrysgro.2017.06.020" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1016/j.jcrysgro.2017.06.020</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Competitive adsorption of air constituents as observed on InGaN/GaN nano-optical probes Konrad Maier, Andreas Helwig, Gerhard Müller, Pascal Hille, Jörg Teubert, Martin Eickhoff Sensors and Actuators B: Chemical&nbsp;250, 91 (2017) <a href="https://doi.org/10.1016/j.snb.2017.04.098" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1016/j.snb.2017.04.098</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Bias-Controlled Optical Transitions in GaN/AlN Nanowire Heterostructures Jan Müßener, Pascal Hille, Tim Grieb, Jörg Schörmann, Jörg Teubert, Eva Monroy, Andreas Rosenauer, Martin Eickhoff ACS Nano&nbsp;11, 8758 (2017) <a class="externalLink" href="https://doi.org/10.1021/acsnano.7b02419" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1021/acsnano.7b02419</a> &nbsp; </td> </tr> <tr> <td> &nbsp; InGaN/GaN nanowires as a new platform for photoelectrochemical sensors – detection of NADH M. Riedel, S. Hölzel, P. Hille, J. Schörmann, M. Eickhoff, F. Lisdat Biosensors and Bioelectronics&nbsp;94, 298 (2017) <a href="https://doi.org/10.1016/j.bios.2017.03.022" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1016/j.bios.2017.03.022</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Bias-Controlled Spectral Response in GaN/AlN Single-Nanowire Ultraviolet Photodetectors Maria Spies, Martien I. den Hertog , Pascal Hille, Jörg Schörmann, Jakub Polaczyński, Bruno Gayral, Martin Eickhoff, Eva Monroy, Jonas Lähnemann Nano Letters&nbsp;17, 4231 (2017) <a class="externalLink" href="https://doi.org/10.1021/acs.nanolett.7b01118" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1021/acs.nanolett.7b01118</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Transport mechanisms in SnO2:N,H thin film grown by chemical vapor deposition Jie Jiang, Lars Ostheim, David Hartung, Yinmei Lu, Detlev M. Hofmann, Martin Eickhoff, Peter J. Klar Physica Status Solidi B&nbsp;254, 1700003 (2017) <a href="https://doi.org/10.1002/pssb.201700003" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1002/pssb.201700003</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Study of the carrier transfer across the GaNP nanowire electrolyte interface by electron paramagnetic spin trapping Jan M. Philipps, Jan E. Stehr, Detlev M. Hofmann, Irina A. Buyanova, Martin Eickhoff Applied Physics Letters&nbsp;110, 222101 (2017) <a href="https://doi.org/10.1063/1.4984277" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.4984277</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Influence of the cluster constituents’ reactivity on the desorption/ionization process induced by neutral SO2 clusters A. Portz, M. Baur, C. R. Gebhardt, A. J. Frank, P. Neuderth, M. Eickhoff, M. Dürr Journal of Chemical Physics&nbsp;146, 134705 (2017) <a href="https://doi.org/10.1063/1.4979488" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.4979488</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Photoluminescence Probing of Complex H2O Adsorption on InGaN/GaN Nanowires Konrad Maier, Andreas Helwig, Gerhard Müller, Pascal Hille, Jörg Teubert, Martin Eickhoff Nano Letters&nbsp;17, 615 (2017) <a class="externalLink" href="https://doi.org/10.1021/acs.nanolett.6b03299" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1021/acs.nanolett.6b03299</a> &nbsp; </td> </tr> </tbody> </table> Content content-164094 Wed, 04 Mar 2026 23:43:54 +0100 2016 https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff#c164094 <table> <tbody> <tr> <td> &nbsp; Interfacial properties of self-assembled GaN nanowires on pre-processed Al2O3(0001) surfaces T. Koukoula, J. Kioseoglou, Th. Kehagias, F. Furtmayr, M. Eickhoff, H. Kirmse, Th. Karakostas, Ph. Komninou Materials Science in Semiconductor Processing&nbsp;55, 46 (2016) <a class="externalLink" href="https://doi.org/10.1016/j.mssp.2016.03.015" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1016/j.mssp.2016.03.015</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Hydrogen induced mobility enhancement in RF sputtered Cu2O thin films K. P. Hering, C. Kandzia, J. Benz, B. G. Kramm, M. Eickhoff, P. J. Klar Journal of Applied Physics&nbsp;120, 185705 (2016) <a class="externalLink" href="https://doi.org/10.1063/1.4966605" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.4966605</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Ge doping of GaN beyond the Mott transition A. Ajay, J. Schörmann, M. Jiménez-Rodriguez, C. B. Lim, F. Walther, M. Rohnke, I. Mouton, L. Amichi, C. Bougerol, M. I. Den Hertog, M. Eickhoff Journal of Physics D: Applied Physics&nbsp;49, 445301 (2016) <a class="externalLink" href="https://doi.org/10.1088/0022-3727/49/44/445301" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1088/0022-3727/49/44/445301</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Luminescent properties of ZnO and ZnMgO epitaxial layers under high hydrostatic pressure A. Kaminska, A. Duzynska, M. Nowakowska, A. Suchocki, T. A. Wassner, B. Laumer, M. Eickhoff Journal of Alloys and Compounds&nbsp;672, 125 (2016) <a class="externalLink" href="https://doi.org/10.1016/j.jallcom.2016.02.128" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1016/j.jallcom.2016.02.128</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Shift of optical absorption edge in SnO2 films with high concentrations of nitrogen grown by chemical vapor deposition Jie Jiang, Yinmei Lu, Bruno K. Meyer, Detlev M. Hofmann, Martin Eickhoff Journal of Applied Physics&nbsp;119, 245703 (2016) <a class="externalLink" href="https://doi.org/10.1063/1.4954693" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.4954693</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Nitrogen incorporation in SnO2 thin films grown by chemical vapor deposition Jie Jiang, Yinmei Lu, Benedikt Kramm, Fabian Michel, Christian T. Reindl, Max E. Kracht, Peter J. Klar, Bruno K. Meyer, Martin Eickhoff Physica Status Solidi B&nbsp;253, 1087 (2016) <a class="externalLink" href="https://doi.org/10.1002/pssb.201552747" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1002/pssb.201552747</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Short-wavelength, mid- and far-infrared intersubband absorption in nonpolar GaN/Al(Ga)N heterostructures Caroline B. Lim, Mark Beeler, Akhil Ajay, Jonas Lähnemann, Edith Bellet-Amalric, Catherine Bougerol, Jörg Schörmann, Martin Eickhoff, Eva Monroy Japanese Journal of Applied Physics&nbsp;55, 05FG05 (2016) <a class="externalLink" href="https://doi.org/10.7567/JJAP.55.05FG05" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.7567/JJAP.55.05FG05</a> &nbsp; </td> </tr> <tr> <td> &nbsp; UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices Jonas Lähnemann, Martien Den Hertog, Pascal Hille, Marı́a de la Mata, Thierry Fournier, Jörg Schörmann, Jordi Arbiol, Martin Eickhoff, Eva Monroy Nano Letters&nbsp;16, 3260 (2016) <a class="externalLink" href="https://doi.org/10.1021/acs.nanolett.6b00806" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1021/acs.nanolett.6b00806</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Optical manipulation of a multilevel nuclear spin in ZnO: Master equation and experiment J. H. Buß, J. Rudolph, T. A. Wassner, M. Eickhoff, D. Hägele Physical Review B&nbsp;93, 155204 (2016) <a class="externalLink" href="https://doi.org/10.1103/PhysRevB.93.155204" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1103/PhysRevB.93.155204</a> &nbsp; </td> </tr> <tr> <td> &nbsp; In situ monitoring of myenteric neuron activity using acetylcholinesterase-modified AlGaN/GaN solution-gate field-effect transistors Gesche Mareike Müntze, Ervice Pouokam, Julia Steidle, Wladimir Schäfer, Alexander Sasse, Kai Röth, Martin Diener, Martin Eickhoff Biosensors and Bioelectronics&nbsp;77, 1048 (2016) <a class="externalLink" href="https://doi.org/10.1016/j.bios.2015.10.076" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1016/j.bios.2015.10.076</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Plasma assisted molecular beam epitaxy of Cu2O on MgO(001): Influence of copper flux on epitaxial orientation M. Kracht, J. Schoermann, M. Eickhoff Journal of Crystal Growth&nbsp;436, 87 (2016) <a class="externalLink" href="https://doi.org/10.1016/j.jcrysgro.2015.11.041" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1016/j.jcrysgro.2015.11.041</a> &nbsp; </td> </tr> </tbody> </table> Content content-164189 Wed, 04 Mar 2026 23:43:54 +0100 2015 https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff#c164189 <table> <tbody> <tr> <td> <h3 class="workspace-title leftBuffer">&nbsp;</h3> Doping-induced universal conductance fluctuations in GaN nanowires Matthias T. Elm, Patrick Uredat, Jan Binder, Lars Ostheim, Markus Schäfer, Pascal Hille, Jan Müßener, Jörg Schörmann, Martin Eickhoff, Peter J. Klar Nano Letters&nbsp;15, 7822 (2015) <a class="externalLink" href="https://doi.org/10.1021/acs.nanolett.5b02332" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1021/acs.nanolett.5b02332</a> &nbsp; </td> </tr> <tr> <td> <h3 class="workspace-title leftBuffer">&nbsp;</h3> Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5-10 THz band C. B. Lim, A. Ajay, C. Bougerol, B. Haas, J. Schörmann, M. Beeler, J. Lähnemann, M. Eickhoff, E. Monroy Nanotechnology&nbsp;26, 435201 (2015) <a class="externalLink" href="https://doi.org/10.1088/0957-4484/26/43/435201" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1088/0957-4484/26/43/435201</a> &nbsp; </td> </tr> <tr> <td> <h3 class="workspace-title leftBuffer">&nbsp;</h3> Effect of water vapor and surface morphology on the low temperature response of metal oxide semiconductor gas sensors Konrad Maier, Andreas Helwig, Gerhard Müller, Pascal Hille, Martin Eickhoff Materials&nbsp;8, 6570 (2015) <a class="externalLink" href="https://doi.org/10.3390/ma8095323" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.3390/ma8095323</a> &nbsp; </td> </tr> <tr> <td> <h3 class="workspace-title leftBuffer">&nbsp;</h3> Self-assembly of ordered wurtzite/rock salt heterostructures - A new view on phase separation in MgxZn1-xO K. I. Gries, T. A. Wassner, S. Vogel, J. Bruckbauer, I. Häusler, R. Straubinger, A. Beyer, A. Chernikov, B. Laumer, M. Kracht, C. Heiliger, J. Janek, S. Chatterjee, K. Volz, M. Eickhoff Journal of Applied Physics&nbsp;118, 045706 (2015) <a class="externalLink" href="https://doi.org/10.1063/1.4926776" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.4926776</a> &nbsp; </td> </tr> <tr> <td> <h3 class="workspace-title leftBuffer">&nbsp;</h3> Structural and electronic properties of GaN nanowires with embedded InxGa1-xN nanodisks J. Kioseoglou, Th. Pavloudis, Th. Kehagias, Ph. Komninou, Th. Karakostas, C. D. Latham, M. J. Rayson, P. R. Briddon, M. Eickhoff Journal of Applied Physics&nbsp;118, 034301 (2015) <a class="externalLink" href="https://doi.org/10.1063/1.4926757" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.4926757</a> &nbsp; </td> </tr> <tr> <td> <h3 class="workspace-title leftBuffer">&nbsp;</h3> Long-lived excitons in GaN/AlN nanowire heterostructures M. Beeler, C. B. Lim, P. Hille, J. Bleuse, J. Schörmann, M. de la Mata, J. Arbiol, M. Eickhoff, E. Monroy Physical Review B&nbsp;91, 205440 (2015) <a class="externalLink" href="https://doi.org/10.1103/PhysRevB.91.205440" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1103/PhysRevB.91.205440</a> &nbsp; </td> </tr> <tr> <td> <h3 class="workspace-title leftBuffer">&nbsp;</h3> Electrical transport properties of Ge-doped GaN nanowires M. Schäfer, M. Günther, C. Länger, J. Müßener, M. Feneberg, P. Uredat, M. T. Elm, P. Hille, J. Schörmann, J. Teubert, T. Henning, P. J. Klar, M. Eickhoff Nanotechnology&nbsp;26, 135704 (2015) <a class="externalLink" href="https://doi.org/10.1088/0957-4484/26/13/135704" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1088/0957-4484/26/13/135704</a> &nbsp; </td> </tr> <tr> <td> <h3 class="workspace-title leftBuffer">&nbsp;</h3> Quantitative analysis of immobilized penicillinase using enzyme-modified AlGaN/GaN field-effect transistors Gesche Mareike Müntze, Barbara Baur, Wladimir Schäfer, Alexander Sasse, John Howgate, Kai Röth, Martin Eickhoff Biosensors and Bioelectronics&nbsp;64, 605 (2015) <a class="externalLink" href="https://doi.org/10.1016/j.bios.2014.09.062" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1016/j.bios.2014.09.062</a> &nbsp; </td> </tr> <tr> <td> <h3 class="workspace-title leftBuffer">&nbsp;</h3> Integration of an opto-chemical detector based on group III-nitride nanowire heterostructures R. Kleindienst, P. Becker, V. Cimalla, A. Grewe, P. Hille, M. Krüger, J. Schörmann, U. T. Schwarz, J. Teubert, M. Eickhoff, S. Sinzinger Applied Optics&nbsp;54, 839 (2015) <a class="externalLink" href="https://doi.org/10.1364/AO.54.000839" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1364/AO.54.000839</a> &nbsp; </td> </tr> </tbody> </table> Content content-164222 Wed, 04 Mar 2026 23:43:54 +0100 2014 https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff#c164222 <table> <tbody> <tr> <td> &nbsp; Probing the Internal Electric Field in GaN/AlGaN Nanowire Heterostructures Jan Müßener, Jörg Teubert, Pascal Hille, Markus Schäfer, Jörg Schörmann, Maria de la Mata, Jordi Arbiol, Martin Eickhoff Nano Letters&nbsp;14, 5118 (2014) <a class="externalLink" href="https://doi.org/10.1021/nl501845m" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1021/nl501845m</a> &nbsp; </td> </tr> <tr> <td> &nbsp; High Precision, Electrochemical Detection of Reversible Binding of Recombinant Proteins on Wide Bandgap GaN Electrodes Functionalized with Biomembrane Models Nataliya Frenkel, Jens Wallys, Sara Lippert, Jörg Teubert, Stefan Kaufmann, Aparna Das, Eva Monroy, Martin Eickhoff, Motomu Tanaka Advanced Functional Materials&nbsp;24, 4927 (2014) <a class="externalLink" href="https://doi.org/10.1002/adfm.201400388" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1002/adfm.201400388</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Detection of oxidising gases using an optochemical sensor system based on GaN/InGaN nanowires Konrad Maier, Andreas Helwig, Gerhard Müller, Pascal Becker, Pascal Hille, Jörg Schörmann, Jörg Teubert, Martin Eickhoff Sensors and Actuators B: Chemical&nbsp;197, 87 (2014 ) <a class="externalLink" href="https://doi.org/10.1016/j.snb.2014.02.002" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1016/j.snb.2014.02.002</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by germanium doping P. Hille, J. Müßener, P. Becker, M. de la Mata, N. Rosemann, C. Magén, J. Arbiol, J. Teubert, S. Chatterjee, J. Schörmann, M. Eickhoff Applied Physics Letters&nbsp;104, 102104 (2014) <a class="externalLink" href="https://doi.org/10.1063/1.4868411" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.4868411</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Intraband Absorption in Self-Assembled Ge-Doped GaN/AlN Nanowire Heterostructures M. Beeler†, P. Hille, J. Schörmann, J. Teubert, M. de la Mata, J. Arbiol, M. Eickhoff, E. Monroy Nano Letters&nbsp;14, 1665 (2014) <a class="externalLink" href="https://doi.org/10.1021/nl5002247" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1021/nl5002247</a> &nbsp; </td> </tr> </tbody> </table> Content content-164223 Wed, 04 Mar 2026 23:43:54 +0100 2013 https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff#c164223 <table> <tbody> <tr> <td> &nbsp; Contactless electroreflectance studies of free exciton binding energy in Zn1-xMgxO epilayers M. Wełna, R. Kudrawiec, A. Kaminska, A. Kozanecki, B. Laumer, M. Eickhoff,&nbsp; J. Misiewicz Applied Physics Letters&nbsp;103, 251908 (2013) <a class="externalLink" href="https://doi.org/10.1063/1.4851215" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.4851215</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires Th. Kehagias, G. P. Dimitrakopulos, P. Becker, J. Kioseoglou, F. Furtmayr, T. Koukoula, I. Häusler, A. Chernikov, S. Chatterjee, Th. Karakostas, H.-M. Solowan, U. T. Schwarz, M. Eickhoff, Ph. Komninou Nanotechnology&nbsp;24, 435702 (2013) <a class="externalLink" href="https://doi.org/10.1088/0957-4484/24/43/435702" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1088/0957-4484/24/43/435702</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Germanium doping of self-assembled GaN nanowires grown by plasma-assisted molecular beam epitaxy Jörg Schörmann, Pascal Hille, Markus Schäfer, Jan Müßener, Pascal Becker, Peter J. Klar, Matthias Kleine-Boymann, Marcus Rohnke, Maria de la Mata, Jordi Arbiol, Detlev M. Hofmann, Jörg Teubert, Martin Eickhoff Journal of Applied Physics&nbsp;114, 103505 (2013) <a class="externalLink" href="https://doi.org/10.1063/1.4820264" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.4820264</a> &nbsp; </td> </tr> <tr> <td> &nbsp; InGaN/GaN quantum dots as optical probes for the electric field at the GaN/electrolyte interface J. Teubert, S. Koslowski, S. Lippert, M. Schäfer, J. Wallys, G. Dimitrakopulos, Th. Kehagias, Ph. Komninou, A. Das, E. Monroy, M. Eickhoff Journal of Applied Physics&nbsp;114, 074313 (2013) <a class="externalLink" href="https://doi.org/10.1063/1.4818624" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.4818624</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Radical formation at the gallium nitride nanowire-electrolyte interface by photoactivated charge transfer J. M. Philipps, G. M. Müntze, P. Hille, J. Wallys, J. Schörmann, J. Teubert, D. M. Hofmann, M. Eickhoff Nanotechnology&nbsp;24, 325701 (2013) <a class="externalLink" href="https://doi.org/10.1088/0957-4484/24/32/325701" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1088/0957-4484/24/32/325701</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Accurate determination of optical bandgap and lattice parameters of Zn1-xMgxO epitaxial films (0 <= x <= 0.3) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire Bernhard Laumer, Fabian Schuster, Martin Stutzmann, Andreas Bergmaier, Günther Dollinger, Martin Eickhoff Journal of Applied Physics&nbsp;113, 233512 (2013) <a class="externalLink" href="https://doi.org/10.1063/1.4811693" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.4811693</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Bandgap engineering in a nanowire: self-assembled 0, 1 and 2D quantum structures Jordi Arbiol, Maria de la Mata, Martin Eickhoff, Anna Fontcuberta i Morral Materials Today&nbsp;16, 213 (2013) <a class="externalLink" href="https://doi.org/10.1016/j.mattod.2013.06.006" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1016/j.mattod.2013.06.006</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Optical properties of GaN-based nanowires containing a single Al0.14Ga0.86N/GaN quantum disc G. Jacopin, L. Rigutti, J. Teubert, F. H. Julien, F. Furtmayr, Ph. Komninou, Th. Kehagias, M. Eickhoff, M. Tchernycheva Nanotechnology&nbsp;24, 125201 (2013) <a class="externalLink" href="https://doi.org/10.1088/0957-4484/24/12/125201" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1088/0957-4484/24/12/125201</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Probing carrier populations in ZnO quantum wells by screening of the internal electric fields A. Chernikov, S. Schäfer, M. Koch, S. Chatterjee, B. Laumer, M. Eickhoff Physical Review B&nbsp;87, 035309 (2013) <a class="externalLink" href="https://doi.org/10.1103/PhysRevB.87.035309" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1103/PhysRevB.87.035309</a> &nbsp; </td> </tr> <tr> <td> &nbsp; A review of MBE grown 0D, 1D and 2D quantum structures in a nanowire Maria de la Mata, Xiang Zhou, Florian Furtmayr, Jörg Teubert, Silvija Gradečak, Martin Eickhoff, Anna Fontcuberta i Morral, Jordi Arbiol Journal of Materials Chemistry C&nbsp;1, 4300 (2013) <a class="externalLink" href="https://doi.org/10.1039/C3TC30556B" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1039/C3TC30556B</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Effects of interface geometry on the thermoelectric properties of laterally microstructured ZnO-based thin films G. Homm, F. Gather, A. Kronenberger, S. Petznick, T. Henning, M. Eickhoff, B. K. Meyer, C. Heiliger, P. J. Klar Physica Status Solidi A&nbsp;210, 119 (2013) <a class="externalLink" href="https://doi.org/10.1002/pssa.201228463" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1002/pssa.201228463</a> &nbsp; </td> </tr> </tbody> </table> Content content-166022 Wed, 04 Mar 2026 23:43:54 +0100 2012 https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff#c166022 <table> <tbody> <tr> <td> &nbsp; Bias-Enhanced Optical pH Response of Group III-Nitride Nanowires Jens Wallys, Jörg Teubert, Florian Furtmayr, Detlev M. Hofmann, Martin Eickhoff Nano Letters&nbsp;12, 6180 (2012) <a class="externalLink" href="https://doi.org/10.1021/nl303021v" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1021/nl303021v</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Opto-chemical sensor system for the detection of H-2 and hydrocarbons based on InGaN/GaN nanowires Sumit Paul, Andreas Helwig, Gerhard Müller, Florian Furtmayr, Jörg Teubert, Martin Eickhoff Sensors and Actuators B - Chemical&nbsp;173, 120 (2012) <a class="externalLink" href="https://doi.org/10.1016/j.snb.2012.06.022" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1016/j.snb.2012.06.022</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Growth study of nonpolar Zn1-xMgxO epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy Bernhard Laumer, Fabian Schuster, Martin Stutzmann, Andreas Bergmaier, Günther Dollinger, Stephen Vogel, Katharina I. Gries, Kerstin Volz, Martin Eickhoff Applied Physics Letters&nbsp;101, 122106 (2012) <a class="externalLink" href="https://doi.org/10.1063/1.4754076" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.4754076</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Binary copper oxide semiconductors: From materials towards devices B. K. Meyer, A. Polity, D. Reppin, M. Becker, P. Hering, P. J. Klar, Th. Sander, C. Reindl, J. Benz, M. Eickhoff, C. Heiliger, M. Heinemann, J. Bläsing, A. Krost, S. Shokovets, C. Müller, C. Ronning Physica Status Solidi B&nbsp;249, 1487 (2012) <a class="externalLink" href="https://doi.org/10.1002/pssb.201248128" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1002/pssb.201248128</a> &nbsp; </td> </tr> <tr> <td> &nbsp; ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers Bernhard Laumer, Fabian Schuster, Thomas A. Wassner, Martin Stutzmann, Marcus Rohnke, Jörg Schörmann, Martin Eickhoff Journal of Applied Physics&nbsp;111, 113504 (2012) <a class="externalLink" href="https://doi.org/10.1063/1.4723642" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.4723642</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Polarity Assignment in ZnTe, GaAs, ZnO, and GaN-AlN Nanowires from Direct Dumbbell Analysis Maria de la Mata, Cesar Magen, Jaume Gazquez, Muhammad Iqbal Bakti Utama, Martin Heiss, Sergei Lopatin, Florian Furtmayr, Carlos J. Fernández-Rojas, Bo Peng, Joan Ramon Morante, Riccardo Rurali, Martin Eickhoff, Anna Fontcuberta i Morral, Qihua Xiong, Jordi Arbiol Nano Letters&nbsp;12, 2579 (2012) <a class="externalLink" href="https://doi.org/10.1021/nl300840q" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1021/nl300840q</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Electrochemical properties of GaN nanowire electrodes-influence of doping and control by external bias J. Wallys, S. Hoffmann, F. Furtmayr, J. Teubert, M. Eickhoff Nanotechnology&nbsp;23, 165701 (2012) <a class="externalLink" href="https://doi.org/10.1088/0957-4484/23/16/165701" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1088/0957-4484/23/16/165701</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Phonon-assisted luminescence of polar semiconductors: Frohlich coupling versus deformation-potential scattering A. Chernikov, V. Bornwasser, M. Koch, S. Chatterjee, C. N. Böttge, T. Feldtmann, M. Kira, S. W. Koch, T. Wassner, S. Lautenschläger, B. K. Meyer, M. Eickhoff Physical Review B&nbsp;85, 035201 (2012) <a class="externalLink" href="https://doi.org/10.1103/PhysRevB.85.035201" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1103/PhysRevB.85.035201</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Self-assembled GaN quantum wires on GaN/AlN nanowire templates Jordi Arbiol, Cesar Magen, Pascal Becker, Gwénolé Jacopin, Alexey Chernikov, Sören Schäfer, Florian Furtmayr, Maria Tchernycheva, Lorenzo Rigutti, Jörg Teubert, Sangam Chatterjee, Joan R. Morante, Martin Eickhoff Nanoscale&nbsp;4, 7517 (2012) <a class="externalLink" href="https://doi.org/10.1039/C2NR32173D" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1039/C2NR32173D</a> &nbsp; </td> </tr> </tbody> </table> Content content-194133 Wed, 04 Mar 2026 23:43:54 +0100 2011 https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff#c194133 <table> <tbody> <tr> <td> &nbsp; Intra-excitonic relaxation dynamics in ZnO Alexej Chernikov, Martin Koch, Bernhard Laumer, Thomas A. Wassner, Martin Eickhoff, Stephan W. Koch, Sangam Chatterjee Applied Physics Letters&nbsp;99, 231910 (2011) <a class="externalLink" href="https://doi.org/10.1063/1.3668102" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.3668102</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Carrier confinement in GaN/AlxGa1−xN nanowire heterostructures (0<x≤ 1) Florian Furtmayr, Jörg Teubert, Pascal Becker, Sonia Conesa-Boj, Joan Ramon Morante, Alexey Chernikov, Sören Schäfer, Sangam Chatterjee, Jordi Arbiol, Martin Eickhoff Physical Review B&nbsp;84, 205303 (2011) <a class="externalLink" href="https://doi.org/10.1103/PhysRevB.84.205303" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1103/PhysRevB.84.205303</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Exciton confinement in homo- and heteroepitaxial ZnO/Zn1 − xMgxO quantum wells with x < 0.1 Bernhard Laumer, Thomas A. Wassner, Fabian Schuster, Martin Stutzmann, Jörg Schörmann, Marcus Rohnke, Alexej Chernikov, Verena Bornwasser, Martin Koch, Sangam Chatterjee, Martin Eickhoff Journal of Applied Physics&nbsp;110, 093513 (2011) <a class="externalLink" href="https://doi.org/10.1063/1.3658020" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.3658020</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires G. Jacopin, L. Rigutti, L. Largeau, F. Fortuna, F. Furtmayr, F. H. Julien, M. Eickhoff, M. Tchernycheva Journal of Applied Physics&nbsp;110, 064313 (2011) <a class="externalLink" href="https://doi.org/10.1063/1.3638698" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.3638698</a> &nbsp; </td> </tr> <tr> <td> &nbsp; GaN nanodiscs embedded in nanowires as optochemical transducers J. Teubert, P. Becker, F. Furtmayr, M. Eickhoff Nanotechnology&nbsp;22 275505 (2011) <a class="externalLink" href="https://doi.org/10.1088/0957-4484/22/27/275505" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1088/0957-4484/22/27/275505</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Optical properties of MgZnO alloys: Excitons and exciton-phonon complexes M. D. Neumann, C. Cobet, N. Esser, B. Laumer, T. A. Wassner, M. Eickhoff, M. Feneberg, R. Goldhahn Journal of Applied Physics&nbsp;110, 013520 (2011) <a class="externalLink" href="https://doi.org/10.1063/1.3606414" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.3606414</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Carrier dynamics in (ZnMg)O alloy materials Alexej Chernikov, Swantje Horst, Martin Koch, Kerstin Volz, Sangam Chatterjee, Stephan W. Koch, Thomas A. Wassner, Bernhard Laumer, Martin Eickhoff Physica Status Solidi C&nbsp;8, 1149 (2011) <a class="externalLink" href="https://doi.org/10.1002/pssc.201000859" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1002/pssc.201000859</a> &nbsp; </td> </tr> </tbody> </table> Content content-194137 Wed, 04 Mar 2026 23:43:54 +0100 2010 https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff#c194137 <table> <tbody> <tr> <td> <h3>&nbsp;</h3> Origin of energy dispersion in AlxGa1−xN/GaN nanowire quantum discs with low Al content L. Rigutti, J. Teubert, G. Jacopin, F. Fortuna, M. Tchernycheva, A. De Luna Bugallo, F. H. Julien, F. Furtmayr, M. Stutzmann, M. Eickhoff Physical Review B&nbsp;82, 235308 (2010) <a class="externalLink" href="https://doi.org/10.1103/PhysRevB.82.235308" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1103/PhysRevB.82.235308</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Investigation of carrier dynamics in Zn1−xMgxO by time-resolved photoluminescence A. Chernikov, S. Horst, M. Koch, K. Volz, S. Chatterjee, S. W. Koch, T. A. Wassner, B. Laumer, M. Eickhoff Journal of Luminescence&nbsp;130, 2256 (2010) <a class="externalLink" href="https://doi.org/10.1016/j.jlumin.2010.06.030" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1016/j.jlumin.2010.06.030</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Electron spin resonance of Zn1−xMgxO thin films grown by plasma-assisted molecular beam epitaxy T. A. Wassner, B. Laumer, M. Althammer, S. T. B. Goennenwein, M. Stutzmann, M. Eickhoff, M. S. Brandt Applied Physics Letters&nbsp;97, 092102 (2010) <a class="externalLink" href="https://doi.org/10.1063/1.3477951" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.3477951</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Photocatalytic Cleavage of Self‐Assembled Organic Monolayers by UV‐Induced Charge Transfer from GaN Substrates John Howgate, Sebastian J. Schoell, Marco Hoeb, Wiebke Steins, Barbara Baur, Samira Hertrich, Bert Nickel, Ian D. Sharp, Martin Stutzmann, Martin Eickhoff Advanced Materials&nbsp;22, 2632 (2010) <a class="externalLink" href="https://doi.org/10.1002/adma.200903756" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1002/adma.200903756</a> &nbsp; </td> </tr> <tr> <td> &nbsp; P‐type doping of semipolar GaN(11-22) by plasma‐assisted molecular‐beam epitaxy A. Das, L. Lahourcade, J. Pernot, S. Valdueza‐Felip, P. Ruterana, A. Laufer, M. Eickhoff, E. Monroy Physica Status Solidi C&nbsp;7, 1913 (2010) <a class="externalLink" href="https://doi.org/10.1002/pssc.200983618" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1002/pssc.200983618</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Optical characterization of AlGaN/GaN quantum disc structures in single nanowires L. Rigutti, F. Fortuna, M. Tchernycheva, A. De Luna Bugallo, G. Jacopin, F. H. Julien, F. Furtmayr, M. Stutzmann, M. Eickhoff Physica Status Solidi C&nbsp;7, 2243 (2010) <a class="externalLink" href="https://doi.org/10.1002/pssc.200983513" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1002/pssc.200983513</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Photoluminescence polarization properties of single GaN nanowires containing AlxGa1−xN/GaN quantum discs L. Rigutti, M. Tchernycheva, A. De Luna Bugallo, G. Jacopin, F. H. Julien, F. Furtmayr, M. Stutzmann, M. Eickhoff, R. Songmuang, F. Fortuna Physical Review B&nbsp;81, 045411 (2010) <a class="externalLink" href="https://doi.org/10.1103/PhysRevB.81.045411" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1103/PhysRevB.81.045411</a> &nbsp; </td> </tr> </tbody> </table> Content content-194264 Wed, 04 Mar 2026 23:43:54 +0100 2009 https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff#c194264 <table> <tbody> <tr> <td> &nbsp; Mg doping and its effect on the semipolar GaN(112-2) growth kinetics L. Lahourcade, J. Pernot, A. Wirthmüller, M. P. Chauvat, P. Ruterana, A. Laufer, M. Eickhoff, E. Monroy Applied Physics Letters&nbsp;95, 171908 (2009) <a class="externalLink" href="https://doi.org/10.1063/1.3256189" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.3256189</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Ultrathin GaN/AlN/GaN solution-gate field effect transistor with enhanced resolution at low source-gate voltage A. Bengoechea Encabo, J. Howgate, M. Stutzmann, M. Eickhoff, M. A. Sánchez-García, Sensors and Actuators B: Chemical&nbsp;142, 304 (2009) <a class="externalLink" href="https://doi.org/10.1016/j.snb.2009.07.016" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1016/j.snb.2009.07.016</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Gallium nitride electrodes for membrane-based electrochemical biosensors T.&nbsp;Schubert, G.&nbsp;Steinhoff, H.-G.&nbsp;von Ribbeck, M.&nbsp;Stutzmannn, M.&nbsp;Eickhoff, M.&nbsp;Tanaka, European Physical Journal E&nbsp;30, 233 (2009) <a class="externalLink" href="https://doi.org/10.1140/epje/i2009-10511-x" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1140/epje/i2009-10511-x</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Strain effects and phonon–plasmon coupled modes in Si‐doped AlN M. Gómez‐Gómez, A. Cros, M. Hermann, M. Stutzmann, M. Eickhoff Physica Status Solidi A&nbsp;206, 1183 (2009) <a class="externalLink" href="https://doi.org/10.1002/pssa.200880852" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1002/pssa.200880852</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Analysis of polarization‐dependent photoreflectance studies for c ‐plane GaN films grown on a ‐plane sapphire Marcus Röppischer, Rüdiger Goldhahn, Carsten Buchheim, Florian Furtmayr, Thomas Wassner, Martin Eickhoff, Christoph Cobet, Norbert Esser Physica Status Solidi A&nbsp;206, 773 (2009) <a class="externalLink" href="https://doi.org/10.1002/pssa.200881406" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1002/pssa.200881406</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Triple-twin domains in Mg doped GaN wurtzite nanowires: structural and electronic properties of this zinc-blende-like stacking Jordi Arbiol, Sònia Estradé, Joan D Prades, Albert Cirera, Florian Furtmayr, Christoph Stark, Andreas Laufer, Martin Stutzmann, Martin Eickhoff, Mhairi H Gass, Andrew L Bleloch, Francesca Peiró, Joan R Morante Nanotechnology&nbsp;20, 145704 (2009) <a class="externalLink" href="https://doi.org/10.1088/0957-4484/20/14/145704" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1088/0957-4484/20/14/145704</a> &nbsp; </td> </tr> <tr> <td> &nbsp; GaN quantum dots as optical transducers for chemical sensors O. Weidemann, P. K. Kandaswamy, E. Monroy, G. Jegert, M. Stutzmann, M. Eickhoff Applied Physics Letters&nbsp;94, 113108 (2009) <a class="externalLink" href="https://doi.org/10.1063/1.3100301" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.3100301</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy Thomas A. Wassner, Bernhard Laumer, Stefan Maier, Andreas Laufer, Bruno K. Meyer, Martin Stutzmann, Martin Eickhoff Journal of Applied Physics&nbsp;105, 023505 (2009) <a class="externalLink" href="https://doi.org/10.1063/1.3065535" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.3065535</a> &nbsp; </td> </tr> <tr> <td> &nbsp; GaN/AlN Axial Multi Quantum Well Nanowires for Optoelectronic Devices S. Conesa-Boj, J. Arbiol, F. Furtmayr, C. Stark, S. Schäfer, M. Stutzmann, M. Eickhoff, F. Peiro, J. R. Morante Proceedings of the 2009 Spanish Conference on Electron Devices <a class="externalLink" href="https://doi.org/10.1109/SCED.2009.4800430" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1109/SCED.2009.4800430</a> &nbsp; </td> </tr> </tbody> </table> Content content-194266 Wed, 04 Mar 2026 23:43:54 +0100 2008 https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff#c194266 <table> <tbody> <tr> <td> &nbsp; Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping Florian Furtmayr, Martin Vielemeyer, Martin Stutzmann, Jordi Arbiol, Sònia Estradé, Francesca Peirò, Joan Ramon Morante, Martin Eickhoff Journal of Applied Physics&nbsp;104, 034309 (2008) <a href="https://doi.org/10.1063/1.2953087" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.2953087</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Gas sensing properties of hydrogen-terminated diamond A. Helwig, G. Müller, J. A. Garrido, M. Eickhoff Sensors and Actuators B: Chemical&nbsp;133, 156 (2008) <a class="externalLink" href="https://doi.org/10.1016/j.snb.2008.02.007" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1016/j.snb.2008.02.007</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Functionalization of 6H-SiC surfaces with organosilanes S. J. Schoell, M. Hoeb, I. D. Sharp, W. Steins, M. Eickhoff, M. Stutzmann, M. S. Brandt Applied Physics Letters&nbsp;92, 153301 (2008) <a href="https://doi.org/10.1063/1.2908871" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.2908871</a> &nbsp; </td> </tr> <tr> <td> &nbsp; The Surface Conductivity at the Diamond/Aqueous Electrolyte Interface Jose A. Garrido, Andreas Härtl, Markus Dankerl, Andreas Reitinger, Martin Eickhoff, Andreas Helwig, Gerhard Müller, Martin Stutzmann Journal of the American Chemical Society&nbsp;130, 4177 (2008) <a href="https://doi.org/10.1021/ja078207g" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1021/ja078207g</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Field Test of Water-Steam Separators for Direct Steam Generation in Parabolic Troughs Markus Eck, Holger Schmidt, Martin Eickhoff, Tobias Hirsch Journal of Solar Energy Engineering&nbsp;130, 011002 (2007) <a class="externalLink" href="https://doi.org/10.1115/1.2804619" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1115/1.2804619</a> &nbsp; </td> </tr> <tr> <td> &nbsp; A novel GaN‐based multiparameter sensor system for biochemical analysis B. Lübbers, G. Kittler, P. Ort, S. Linkohr, D. Wegener, B. Baur, M. Gebinoga, F. Weise, M. Eickhoff, S. Maroldt, A. Schober, O. Ambacher Physica Status Solidi C&nbsp;5, 2361 (2007) <a class="epub-doi" href="https://doi.org/10.1002/pssc.200778726" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1002/pssc.200778726</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Optical properties of Si- and Mg-doped gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy Florian Furtmayr, Martin Vielemeyer, Martin Stutzmann, Andreas Laufer, Bruno K. Meyer, Martin Eickhoff Journal of Applied Physics&nbsp;104, 074309 (2008) <a href="https://doi.org/10.1063/1.2980341" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.2980341</a> &nbsp; </td> </tr> </tbody> </table> Content content-194267 Wed, 04 Mar 2026 23:43:54 +0100 2007 https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff#c194267 <table> <tbody> <tr> <td> &nbsp; Dissociative Gas Sensing at Metal Oxide Surfaces Andreas Helwig, Gerhard Muller, Martin Eickhoff, Giorgio Sberveglieri IEEE Sensors Journal&nbsp;7, 1675 (2007) <a href="https://doi.org/10.1109/JSEN.2007.909428" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1109/JSEN.2007.909428</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Gas Sensing Interactions at Hydrogenated Diamond Surfaces Andreas Helwig, Gerhard Muller, Olaf Weidemann, Andreas Hartl, Jose Antonio Garrido, Martin Eickhoff IEEE Sensors Journal&nbsp;7, 1349 (2007) <a href="https://doi.org/10.1109/JSEN.2007.905019" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1109/JSEN.2007.905019</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Stark shift of interband transitions in AlN/GaN superlattices C. Buchheim, R. Goldhahn, A. T. Winzer, G. Gobsch, U. Rossow, D. Fuhrmann, A. Hangleiter, F. Furtmayr, M. Eickhoff Applied Physics Letters&nbsp;90, 241906 (2007) <a href="https://doi.org/10.1063/1.2748313" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.2748313</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Selective etching of AlInN/GaN heterostructures for MEMS technology E. Sillero, D. López-Romero, F. Calle, M. Eickhoff, J. F. Carlin, N. Grandjean, M. Ilegems Microelectronic Engineering&nbsp;84, 1152 (2007) <a class="doi" href="https://doi.org/10.1016/j.mee.2007.01.150" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1016/j.mee.2007.01.150</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Modulation spectroscopy of AlGaN/GaN heterostructures: The influence of electron–hole interaction R. Goldhahn, A. T. Winzer, A. Dadgar, A. Krost, O. Weidemann, M. Eickhoff Physica Status Solidi A&nbsp;204, 447 (2007) <a class="epub-doi" href="https://doi.org/10.1002/pssa.200673964" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1002/pssa.200673964</a> &nbsp; </td> </tr> <tr> <td> &nbsp; GaN Quantum Dots as Optical Transducers in Field Effect Chemical Sensors O. Weidemann, G. Jegert, S. Birner, M. Stutzmann, M. Eickhoff Sensors, 2007 IEEE&nbsp;1-3, 1175 (2007) <a href="https://doi.org/10.1109/ICSENS.2007.4388617" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1109/ICSENS.2007.4388617</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Fully unstrained GaN on sacrificial AlN layers by nano‐heteroepitaxy K. Tonisch, V. Cimalla, F. Niebelschütz, H. Romanus, M. Eickhoff, O. Ambacher Physica Status Solidi C&nbsp;4, 2248 (2007) <a class="epub-doi" href="https://doi.org/10.1002/pssc.200674813" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1002/pssc.200674813</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Fabrication of freestanding GaN microstructures using AlN sacrificial layers E. Zaus, M. Hermann, M. Stutzmann, M. Eickhoff Physica Status Solidi Rapid Research Letters&nbsp;1, R10 (2007) <a class="epub-doi" href="https://doi.org/10.1002/pssr.200600063" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1002/pssr.200600063</a> &nbsp; </td> </tr> </tbody> </table> Content content-194268 Wed, 04 Mar 2026 23:43:54 +0100 2006 https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff#c194268 <table> <tbody> <tr> <td> &nbsp; Impact of silicon incorporation on the formation of structural defects in AlN M. Hermann, F. Furtmayr, F. M. Morales, O. Ambacher, M. Stutzmann, M. Eickhoff Journal of Applied Physics&nbsp;100, 113531 (2006) <a href="https://doi.org/10.1063/1.2363239" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.2363239</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Direct biofunctionalization of semiconductors: A survey Martin Stutzmann, Jose Antonio Garrido, Martin Eickhoff, Martin S. Brandt Physica Status Solidi A&nbsp;203, 3424 (2006) <a class="epub-doi" href="https://doi.org/10.1002/pssa.200622512" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1002/pssa.200622512</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Catalytic activity of enzymes immobilized on AlGaN/GaN solution gate field-effect transistors B. Baur, J. Howgate, H.-G. von Ribbeck, Y. Gawlina, V. Bandalo, G. Steinhoff, M. Stutzmann, M. Eickhoff Applied Physics Letters&nbsp;89, 183901 (2006) <a href="https://doi.org/10.1063/1.2369534" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.2369534</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Nearly stress-free substrates for GaN homoepitaxy M. Hermann, D. Gogova, D. Siche, M. Schmidbauer, B. Monemar, M. Stutzmann, M. Eickhoff Journal of Crystal Growth&nbsp;293, 462 (2006) <a class="doi" href="https://doi.org/10.1016/j.jcrysgro.2006.05.058" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1016/j.jcrysgro.2006.05.058</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Erratum: Recording of cell action potentials with AlGaN/GaN field-effect transistors [Appl. Phys. Lett. 86, 033901 (2005)] Georg Steinhoff, Barbara Baur, Günter Wrobel, Sven Ingebrandt, Andreas Offenhäusser, Armin Dadgar, Alois Krost, Martin Stutzmann, Martin Eickhoff Applied Physics Letters&nbsp;89, 019901 (2006) <a href="https://doi.org/10.1063/1.2219129" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.2219129</a> &nbsp; </td> </tr> <tr> <td> &nbsp; New Materials for Chemical and Biosensors A. Lloyd Spetz, S. Nakagomi, H. Wingbrant, M. Andersson, A. Salomonsson, S. Roy, G. Wingqvist, I. Katardjiev, M. Eickhoff, K. Uvdal, R. Yakimova Materials and Manufacturing Processes&nbsp;21, 253 (2006) <a href="https://doi.org/10.1080/10426910500464495" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1080/10426910500464495</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Luminescence properties of highly Si-doped AlN E. Monroy, J. Zenneck, G. Cherkashinin, O. Ambacher, M. Hermann, M. Stutzmann, M. Eickhoff Applied Physics Letters&nbsp;88, 071906 (2006) <a href="https://doi.org/10.1063/1.2173622" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.2173622</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Electroreflectance spectroscopy of Pt/AlGaN/GaN heterostructures exposed to gaseous hydrogen A. T. Winzer, R. Goldhahn, G. Gobsch, A. Dadgar, A. Krost, O. Weidemann, M. Stutzmann, M. Eickhoff Applied Physics Letters&nbsp;88, 024101 (2006) <a href="https://doi.org/10.1063/1.2161394" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.2161394</a> &nbsp; </td> </tr> </tbody> </table> Content content-194269 Wed, 04 Mar 2026 23:43:54 +0100 2005 https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff#c194269 <table> <tbody> <tr> <td> &nbsp; Chemical functionalization of GaN and AlN surfaces B. Baur, G. Steinhoff, J. Hernando, O. Purrucker, M. Tanaka, B. Nickel, M. Stutzmann, M. Eickhoff Applied Physics Letters&nbsp;87, 263901 (2005) <a href="https://doi.org/10.1063/1.2150280" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.2150280</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Electrochemical stabilization of crystalline silicon with aromatic self‐assembled monolayers in aqueous electrolytes Murat Tutus, Oliver Purrucker, Klaus Adlkofer, Martin Eickhoff, Motomu Tanaka Physica Status Solidi B&nbsp;242, 2838 (2005) <a class="epub-doi" href="https://doi.org/10.1002/pssb.200541263" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1002/pssb.200541263</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Highly Si-doped AlN grown by plasma-assisted molecular-beam epitaxy M. Hermann, F. Furtmayr, A. Bergmaier, G. Dollinger, M. Stutzmann, M. Eickhoff Applied Physics Letters&nbsp;86, 192108 (2005) <a href="https://doi.org/10.1063/1.1923180" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.1923180</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Determination of the polarization discontinuity at the AlGaN/GaN interface by electroreflectance spectroscopy A. T. Winzer, R. Goldhahn, G. Gobsch, A. Link, M. Eickhoff, U. Rossow, A. Hangleiter Applied Physics Letters&nbsp;86, 181912 (2005) <a href="https://doi.org/10.1063/1.1923748" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.1923748</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Mn-rich clusters in GaN: Hexagonal or cubic symmetry? G. Martínez-Criado, A. Somogyi, S. Ramos, J. Campo, R. Tucoulou, M. Salome, J. Susin, M. Hermann, M. Eickhoff, M. Stutzmann Applied Physics Letters&nbsp;86, 131927 (2005) <a href="https://doi.org/10.1063/1.1886908" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.1886908</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Influence of thermal oxidation on the electronic properties of Pt Schottky contacts on GaN grown by molecular-beam epitaxy O. Weidemann, E. Monroy, E. Hahn, M. Stutzmann, M. Eickhoff Applied Physics Letters&nbsp;86, 083507 (2005) <a href="https://doi.org/10.1063/1.1868863" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.1868863</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Recording of cell action potentials with AlGaN/GaN field-effect transistors Georg Steinhoff, Barbara Baur, Günter Wrobel, Sven Ingebrandt, Andreas Offenhäusser, Armin Dadgar, Alois Krost, Martin Stutzmann, Martin Eickhoff Applied Physics Letters&nbsp;86, 033901 (2005) <a href="https://doi.org/10.1063/1.1853531" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.1853531</a> &nbsp; </td> </tr> <tr> <td> &nbsp; AlGaN/GaN Electrolyte-Gate Field-Effect Transistors as Transducers for Bioelectronic Devices Georg&nbsp;Steinhoff, Barbara&nbsp;Baur, Hans-Georg&nbsp;von&nbsp;Ribbeck, Günter&nbsp;Wrobel, Sven&nbsp;Ingebrandt, Andreas&nbsp;Offenhäusser, Martin&nbsp;Stutzmann, Martin&nbsp;Eickhoff Advances in Solid State Physics&nbsp;45, 363 (2005) <a href="https://doi.org/10.1007/11423256_29" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1007/11423256_29</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Phase transition by Mg doping of N‐face polarity GaN E. Sarigiannidou, E. Monroy, M. Hermann, T. Andreev, P. Holliger, S. Monnoye, H. Mank, B. Daudin, M. Eickhoff Physica Status Solidi C&nbsp;2, 2216 (2005) <a class="epub-doi" href="https://doi.org/10.1002/pssc.200461429" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1002/pssc.200461429</a> &nbsp; </td> </tr> </tbody> </table> Content content-194270 Wed, 04 Mar 2026 23:43:54 +0100 2004 https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff#c194270 <table> <tbody> <tr> <td> &nbsp; Structural and interface properties of an AlN diamond ultraviolet light emitting diode C. R. Miskys, J. A. Garrido, M. Hermann, M. Eickhoff, C. E. Nebel, M. Stutzmann, G. Vogg Applied Physics Letters&nbsp;85, 3699 (2004) <a href="https://doi.org/10.1063/1.1811382" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.1811382</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Polytype transition of N-face GaN:Mg from wurtzite to zinc-blende E. Monroy, M. Hermann, E. Sarigiannidou, T. Andreev, P. Holliger, S. Monnoye, H. Mank, B. Daudin, M. Eickhoff Journal of Applied Physics&nbsp;96, 3709 (2004) <a href="https://doi.org/10.1063/1.1787142" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.1787142</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Anisotropic propagation of surface acoustic waves on nitride layers J. Pedrós, F. Calle, J. Grajal, R. J. Jiménez Riobóo, C. Prieto, J. L. Pau, J. Pereiro, M. Hermann, M. Eickhoff, Z. Bougrioua Superlattices and Microstructures&nbsp;36, 815 (2004) <a class="doi" href="https://doi.org/10.1016/j.spmi.2004.09.044" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1016/j.spmi.2004.09.044</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Electron injection-induced effects in Mn-doped GaN William Burdett, Olena Lopatiuk, Leonid Chernyak, Martin Hermann, Martin Stutzmann, Martin Eickhoff Journal of Applied Physics&nbsp;96, 3556 (2004) <a href="https://doi.org/10.1063/1.1780606" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.1780606</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Piezoresistive properties of single crystalline, polycrystalline, and nanocrystalline n-type 3C-SiC M. Eickhoff, M. Möller, G. Kroetz, M. Stutzmann Journal of Applied Physics&nbsp;96, 2872 (2004) <a href="https://doi.org/10.1063/1.1775052" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.1775052</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Influence of crystal defects on the piezoresistive properties of 3C–SiC M. Eickhoff, M. Stutzmann Journal of Applied Physics&nbsp;96, 2878 (2004) <a href="https://doi.org/10.1063/1.1775043" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.1775043</a> &nbsp; </td> </tr> <tr> <td> &nbsp; High quality heteroepitaxial AlN films on diamond G. Vogg, C. R. Miskys, J. A. Garrido, M. Hermann, M. Eickhoff, M. Stutzmann Journal of Applied Physics&nbsp;96, 895 (2004) <a href="https://doi.org/10.1063/1.1759088" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.1759088</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Influence of crystal quality on the electronic properties of n-type 3C-SiC grown by low temperature low pressure chemical vapor deposition M. Eickhoff, H. Möller, J. Stoemenos, S. Zappe, G. Kroetz, M. Stutzmann Journal of Applied Physics&nbsp;95, 7908 (2004) <a href="https://doi.org/10.1063/1.1728311" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.1728311</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Direct Observation of Mn Clusters in GaN by X-ray Scanning Microscopy Gema Martínez-Criado, Andrea Somogyi, Martin Hermann, Martin Eickhoff, Martin Stutzmann Japanese Journal of Applied Physics&nbsp;43, L695 (2004) <a href="https://doi.org/10.1143/JJAP.43.L695" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1143/JJAP.43.L695</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Photoreflectance studies of (Al)Ga- and N-face AlGaN/GaN heterostructures C. Buchheim, A. T. Winzer, R. Goldhahn, G. Gobsch, O. Ambacher, A. Link, M. Eickhoff, M. Stutzmann Thin Solid Films&nbsp;450, 155 (2004) <a class="doi" href="https://doi.org/10.1016/j.tsf.2003.10.062" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1016/j.tsf.2003.10.062</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Temperature-dependent electric fields in GaN Schottky diodes studied by electroreflectance S. Shokhovets, D. Fuhrmann, R. Goldhahn, G. Gobsch, O. Ambacher, M. Hermann, M. Eickhoff Thin Solid Films&nbsp;450, 163 (2004) <a class="doi" href="https://doi.org/10.1016/j.tsf.2003.10.064" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1016/j.tsf.2003.10.064</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Improved 3C-SiC Films Epitaxially Grown on Si by Flash Lamp Processing J. Stoemenos, D. Panknin, M. Eickhoff, V. Heera, W. Skorupa Journal of the Electrochemical Society&nbsp;151, G136 (2002) <a class="externalLink" href="https://doi.org/10.1149/1.1639167" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1149/1.1639167 </a> &nbsp; </td> </tr> </tbody> </table> Content content-194271 Wed, 04 Mar 2026 23:43:54 +0100 2003 https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff#c194271 <table> <tbody> <tr> <td> &nbsp; AlxGa1–xN—A New Material System for Biosensors G. Steinhoff, O. Purrucker, M. Tanaka, M. Stutzmann, M. Eickhoff Advanced Functional Materials&nbsp;13, 841 (2003) <a class="epub-doi" href="https://doi.org/10.1002/adfm.200304397" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1002/adfm.200304397</a> &nbsp; </td> </tr> <tr> <td> &nbsp; AlN/Diamond np-junctions Christoph E. Nebel, Claudio R. Miskys, Jose, A. Garrido, Martin Hermann, Oliver Ambacher, Martin Eickhoff, Martin Stutzmann Diamond and Related Materials&nbsp;12, 1873 (2003) <a class="doi" href="https://doi.org/10.1016/S0925-9635(03)00313-3" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1016/S0925-9635(03)00313-3</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Hydrosilylation of crystalline silicon (111) and hydrogenated amorphous silicon surfaces: A comparative x-ray photoelectron spectroscopy study A. Lehner, G. Steinhoff, M. S. Brandt, M. Eickhoff, M. Stutzmann Journal of Applied Physics&nbsp;94, 2289 (2003) <a href="https://doi.org/10.1063/1.1593223" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.1593223</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes O. Weidemann, M. Hermann, G. Steinhoff, H. Wingbrant, A. Lloyd Spetz, M. Stutzmann, M. Eickhoff Applied Physics Letters&nbsp;83, 773 (2003) <a href="https://doi.org/10.1063/1.1593794" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.1593794</a> &nbsp; </td> </tr> <tr> <td> &nbsp; pH response of GaN surfaces and its application for pH-sensitive field-effect transistors G. Steinhoff, M. Hermann, W. J. Schaff, L. F. Eastman, M. Stutzmann , M. Eickhoff Applied Physics Letters&nbsp;83, 177 (2003) <a href="https://doi.org/10.1063/1.1589188" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.1589188</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Exciton quenching in Pt/GaN Schottky diodes with Ga- and N-face polarity S. Shokhovets, D. Fuhrmann, R. Goldhahn, G. Gobsch, O. Ambacher, M. Hermann, U. Karrer, M. Eickhoff Applied Physics Letters&nbsp;82, 1712 (2003) <a href="https://doi.org/10.1063/1.1561160" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.1561160</a> &nbsp; </td> </tr> <tr> <td> &nbsp; AlN/diamond heterojunction diodes C. R. Miskys, J. A. Garrido, C. E. Nebel, M. Hermann, O. Ambacher, M. Eickhoff, M. Stutzmann Applied Physics Letters&nbsp;82, 290 (2003) <a href="https://doi.org/10.1063/1.1532545" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1063/1.1532545</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Hydrosilylation of silicon surfaces: Crystalline versus amorphous A. Lehner, G. Steinhoff, M. S. Brandt, M. Eickhoff, M. Stutzmann Materials Research Society Symposium Proceedings&nbsp;762, 473 (2003) &nbsp; </td> </tr> <tr> <td> &nbsp; Electroreflectance and photoreflectance studies of electric fields in Pt/GaN Schottky diodes and AlGaN/GaN heterostructures S. Shokhovets, R. Goldhahn, G. Gobsch, O. Ambacher, I. P. Smorchkova, J. S. Speck, U. Mishra, A. Link, M. Hermann, M. Eickhoff Materials Research Society Symposium Proceedings&nbsp;743, 279 (2003) &nbsp; </td> </tr> <tr> <td> &nbsp; Two-dimensional charge carrier systems for chemical sensors: AlGaN/GaN and diamond M. Stutzmann, J. A. Garrido, M. Eickhoff Proceedings of the IEEE Sensors&nbsp;1-2, 1153 (2003) <a href="https://doi.org/10.1109/ICSENS.2003.1279125" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1109/ICSENS.2003.1279125</a> &nbsp; </td> </tr> </tbody> </table> Content content-194272 Wed, 04 Mar 2026 23:43:54 +0100 2002 https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff#c194272 <table> <tbody> <tr> <td> &nbsp; Gas sensitive GaN/AlGaN-heterostructures J. Schalwig, G. Müller, M. Eickhoff, O. Ambacher, M. Stutzmann Sensors and Actuators B: Chemical&nbsp;87, 425 (2002) <a class="doi" href="https://doi.org/10.1016/S0925-4005(02)00292-7" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1016/S0925-4005(02)00292-7</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al0.31Ga0.69N E. Monroy, F. Calle, R. Ranchal, T. Palacios, M. Verdú, F. J. Sánchez, M. T. Montojo, M. Eickhoff, F. Omnès, Z. Bougrioua, I. Moerman Semiconductor Science and Technology&nbsp;17, L47 (2002) <a href="https://doi.org/10.1088/0268-1242/17/9/103" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1088/0268-1242/17/9/103</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Observation of ion-induced changes in the channel current of high electron mobility AlGaN/GaN transistors (HEMT) Ralph Neuberger, Gerhard Müller, Martin Eickhoff, Oliver Ambacher, Martin Stutzmann Materials Science and Engineering: B&nbsp;93, 143 (2002) <a class="doi" href="https://doi.org/10.1016/S0921-5107(02)00053-3" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1016/S0921-5107(02)00053-3</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Nanotechnology for SAW devices on AlN epilayers T. Palacios, F. Calle, E. Monroy, J. Grajal, M. Eickhoff, O. Ambacher, C. Prieto Materials Science and Engineering: B&nbsp;93, 154 (2002) <a class="doi" href="https://doi.org/10.1016/S0921-5107(02)00022-3" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1016/S0921-5107(02)00022-3</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Group III-nitride-based gas sensors for combustion monitoring J. Schalwig, G. Müller, M. Eickhoff, O. Ambacher, M. Stutzmann Materials Science and Engineering: B&nbsp;93, 207 (2002) <a class="doi" href="https://doi.org/10.1016/S0921-5107(02)00050-8" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1016/S0921-5107(02)00050-8</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, L. F. Eastman Journal of Physics: Condensed Matter&nbsp;14, 3399 (2002) <a href="https://doi.org/10.1088/0953-8984/14/13/302" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1088/0953-8984/14/13/302</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Thermoresistive and Piezoresistive Properties of Wurtzite N–GaN S. Mingiacchi, P. Lugli, A. Bonfiglio, G. Conte, M. Eickhoff, O. Ambacher, A. Rizzi, A. Passaseo, P. Visconti, R. Cingolani Physica Status Solidi A&nbsp;190, 281 (2002) <a class="externalLink" href="https://doi.org/10.1002/1521-396X(200203)190:1%3C281::AID-PSSA281%3E3.0.CO;2-U" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1002/1521-396X(200203)190:1%3C281::AID-PSSA281%3E3.0.CO;2-U</a> &nbsp; </td> </tr> <tr> <td> &nbsp; GaN-based heterostructures for sensor applications M. Stutzmann, G. Steinhoff, M. Eickhoff, O. Ambacher, C. E. Nebel, J. Schalwig, R. 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Stutzmann IEEE Semiconducting and Semi-Insulating Materials Conference, 64 (2002) &nbsp; </td> </tr> <tr> <td> &nbsp; High frequency SAW devices on AlGaN: fabrication, characterization and integration with optoelectronics T. Palacios, F. Calle, J. Grajal, E. Monroy, M. Eickhoff, O. Ambacher, F. Omnes Proceedings of the IEEE Ultrasonics Symposium&nbsp;1-2, 57 (2002) &nbsp; </td> </tr> <tr> <td> &nbsp; Novel sensor applications of group-III nitrides M. Eickhoff, O. Ambacher, G. Steinhoff, J. Schalwig, R. Neuberger, T. Palacios, E. Monroy, F. Calle, G. Muller, M. Stutzmann Materials Research Society Symposium Proceedings&nbsp;693, 781 (2002) &nbsp; </td> </tr> <tr> <td> &nbsp; High-resolution XRD investigations of the strain reduction in 3C-SiC thin films grown on Si(111) substrates P. Weih, V. Cimalla, C. Forster, J. Pezoldt, T. Stauden, L. Spiess, H. Romanus, M. Hermann, M. Eickhoff, P. Masri, O. Ambacher Materials Science Forum&nbsp;433-4, 233 (2002) &nbsp; </td> </tr> <tr> <td> &nbsp; Electronics and sensors based on pyroelectrc AlGaN/GaN heterostructures O. Ambacher, M. Eickhoff, G. Steinhoff, M. Hermann, L. Gorgens, V. Weiss, B. Baur, M. Stutzmann, R. Neuberger, J. Schalwig, G. Muller, V. Tilak, B. Green, B. Schaff, L. F. Eastman, F. Bernardini, V. Fiorentini Electrochemical Society Series&nbsp;2002, 335 (2002) &nbsp; </td> </tr> </tbody> </table> Content content-194273 Wed, 04 Mar 2026 23:43:54 +0100 2001 https://www.uni-bremen.de/ifp/arbeitsgruppen/festkoerpermaterialien-ag-eickhoff/publikationen-ag-eickhoff#c194273 <table> <tbody> <tr> <td> &nbsp; The beneficial role of flash lamp annealing on the epitaxial growth of the 3C–SiC on Si D. Panknin, J. Stoemenos, M. Eickhoff, V. Heera, M. Voelskow, W. 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Eickhoff Sensors and Actuators B: Chemical&nbsp;77, 111 (2001) <a class="doi" href="https://doi.org/10.1016/S0925-4005(01)00681-5" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1016/S0925-4005(01)00681-5</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Oxidation Dependence on Defect Density in 3C-SiC Films M. Eickhoff, N. Vouroutzis, A. Nielsen, G. Krötz, J. Stoemenos Journal of the Electrochemical Society&nbsp;148, G336 (2001) <a class="externalLink" href="https://doi.org/10.1149/1.1370972" target="_blank" title="Öffnet externen Link in neuem Fenster"><abbr title="digital object identifier">DOI</abbr>: 10.1149/1.1370972</a> &nbsp; </td> </tr> <tr> <td> &nbsp; Suppression of Si Cavities at the SiC/Si Interface during Epitaxial Growth of 3C-SiC on Silicon-on-Insulator H. Möller, G. Krötz, M. Eickhoff, A. Nielsen, V. Papaioannou, J. 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