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Publikationen AG Gutowski

Alle Publikationen:

Synthesis and Characterization of Oxazaborin in Phosphonate for Blue OLED Emitter Applications

Jonas Köhling, Volodymyr Kozel, Vladislav Jovanov, Romana Pajkert, Sergey N. Tverdomed, Oleg Gridenco, Malte Fugel, Simon Grabowsky, Gerd-Volker Röschenthaler, and Veit Wagner

Chem. Phys.Chem. 20 , 665 (2019)

Electrical Characteristics of Ternary Solar Cells based on PTB7:PCBM:ICBA

A. Castro-Chacón, A. Castro-Carranza, J. Gutowski, and J. C. Nolasco

2019 IEEE International Autumn Meeting on Power, Electronics and Computing (ROPEC 2019) Ixtapa (Mexico), November 13-15, 2019
Accepted for publication in IEEEXplore

Comparison of two Synthesis Processes via Low-Cost Chemical Bath Techniques for CuO Films on ITO

A. R. Vences, A. Castro-Chacón, A. Castro-Carranza, and J. Gutowski, J. C. Nolasco

2019 IEEE International Autumn Meeting on Power, Electronics and Computing (ROPEC 2019) Ixtapa (Mexico), November 13-15, 2019
Accepted for publication in IEEEXplore

Comparison of two Acid Leaching Processes toward Indium Recovery obtained from End-of-Life In-Cell Touch Smartphone Displays

C. R. Camou, A. Castro-Carranza, Jürgen Gutowski, and J. C. Nolasco

2019 IEEE International Autumn Meeting on Power, Electronics and Computing (ROPEC 2019) Ixtapa (Mexico), November 13-15, 2019
Accepted for publication in IEEEXplore

Optical Properties and Carrier Dynamics in Inorganic and Hybrid Inorganic/Organic ZnO- and GaN-based Nanowire Structures

A. Jaros, S. Bley, K. Zimmermann, L. Krieg, A. Castro-Carranza, J. Gutowski, F. Meierhofer, T. Voss

Phys. Stat. Sol. (b) 256, 1800463 (2019)

Feature Article DFG Research Unit FOR1616

Understanding the Open Circuit Voltage in Organic Solar Cells on the Basis of the Donor-Acceptor Abrupt (p-n++) Heterojunction

J. C. Nolasco, A. Castro-Carranza, Y. Arredondo León, C. Briones-Jurado, J. Gutowski, J. Parisi, and E. von Hauff

Solar Energy 184, 610 (2019)

Organoboron Donor-π-Acceptor Chromophores for Small-Molecule Organic Solar Cells

J. C. Nolasco, J. W. Ryan, M. Rodriguez, A. Castro-Carranza, J. L. Maldonado, G. Ramos-Ortiz, O. Barbosa-Garcia, J. Gutowski, E. Palomares, J. Parisi

Journal of Materials Science: Materials in Electronics 19, 16410 (2018)

Spatially resolved Luminescence Properties of Non- and Semi-Polar InGaN Quantum Wells on GaN Microrods

J. Dühn, C. Tessarek, M. Schowalter, T. Coenen, B. Gerken, K. Müller-Caspary, T. Mehrtens, M. Heilmann, S. Christiansen, A. Rosenauer, J. Gutowski, and K. Sebald

J. Phys. D: Appl. Physics 51 355102 (2018)

Tunable Bragg polaritons and nonlinear emission from a hybrid metal-unfolded ZnSe-based microcavity

SK. Shaid-Ur Rahman, T. Klein, J. Gutowski, S. Klembt, and K.Sebald

Scientific Reports 7, 767 (2017)

The influence of the quantum-confined Stark effect on InGaN/AlGaN quantum dots

E. Zakizade, S. Figge, C. Laurus, T. Mehrtens, A. Rosenauer, D. Hommel, J. Gutowski, and K. Sebald

Phys. Status Solidi B 254, 1600325 (2017)

Analytical energy-barrier-dependent Voc model for amorphous silicon solar cells

A. Castro-Carranza, J. C. Nolasco, N. Reininghaus, S. Geißendörfer, M. Vehse, J. Parisi, J. Gutowski, and T. Voss

Appl. Phys. Lett. 109, 043503 (2016)

Effects of FeCl3 as oxidizing agent on the conduction mechanisms in polypyrrole (PPy)/pc-ZnO hybrid heterojunctions grown by oxidative chemical vapor deposition

Alejandra Castro-Carranza, Jairo C. Nolasco, Stephanie Bley, Max Rückmann, Florian Meierhofer, Lutz Mädler, Tobias Voss, and Jürgen Gutowski

Journal of Polymer Science part B: Polymer Physics 54, 1537 (2016)

Luminescence dynamics of hybrid ZnO nanowire/CdSe quantum dot structures

S. Bley, F. Albrecht, S. Resch, S. Waldvogel, A. Menzel, M. Zacharias, J. Gutowski, and T. Voss

Physica Status Solidi C 13, 606 (2016)

Observation of a hybrid state of Tamm plasmons and microcavity exciton polaritons

SK. Shaid-Ur Rahman, T. Klein, J. Gutowski, S. Klembt, D. Hommel, and K.Sebald

Scientific Reports 6, 34392 (2016)

Bragg polaritons in a ZnSe-based unfolded microcavity at elevated temperatures

K. Sebald, SK. S. Rahman, M. Cornelius, T. Kaya, J. Gutowski, T. Klein, A. Gust, D. Hommel, and S. Klembt

Applied Physics Letters 108, 121105 (2016)

Tamm plasmon polaritons in the visible spectral region and its optical properties in ZnSe-based microcavities

S.K. S. Rahman, K. Sebald, J. Gutowski, T. Klein, S. Klembt, C. Kruse, D. Hommel

Phys. Status Solidi C 13, 498 (2016)

Structural and optical characterization of hybrid ZnO/polymer core-shell nanowires fabricated by oxidative chemical vapour deposition

S. Bley, M. Rückmann, A. Castro-Carranza, F. Meierhofer, L. Mädler, T. Voss, and J. Gutowski

Physica Status Solidi C 13, 614 (2015)

Electron tunneling from colloidal CdSe quantum dots to ZnO nanowires studied by time-resolved luminescence and photoconductivity experiments

S. Bley, M. Diez, F. Albrecht, S. Resch, S. Waldvogel, A. Menzel, M. Zacharias, J. Gutowski, and T. Voss

J. Phys. Chem. C 119, 27, 15627 (2015)

Tailoring the optical properties of wide-bandgap based microcavities via metal films

K. Sebald, SK. S. Rahman, M. Cornelius, J. Gutowski, T. Klein, S. Klembt, C. Kruse and D. Hommel

Appl. Phys. Lett. 107, 062101 (2015)

Functional ZnO/polymer core-shell nanowires fabricated by oxidative chemical vapour deposition

J.-P. Richter, A. Dev, C. Ronning, J. Gutowski, T. Voss

Journal of Physics D: Applied Physics 47, 394004 (2014)

Photonic crystal structures based on GaN ultrathin membranes

O. Volciuc, V. Sergentu, I. Tiginyanu, M. Schowalter, V. Ursaki, A. Rosenauer, D. Hommel, and J. Gutowski

Journal of Nanoelectronics and Optoelectronics 9, 271 (2014)

Influence of a low-temperature capping on the crystalline structure and morphology of InGaN quantum dot structures

B. Krause, B. Miljevic, T. Aschenbrenner, E. Piskorska-Hommel, C. Tessarek, M. Barchuk, G. Buth, R. Donfeu Tchana, S. Figge, J. Gutowski, D. Hänschke, J. Kalden, T. Laurus, S. Lazarev, R. Magalhaes-Paniago, K. Sebald, A. Wolska, D. Hommel, J. Falta, V. Holý, and T. Baumbach

Journal of Alloys and Compounds 585, 572 (2014)

The impact of nanoperforation on persistent photoconductivity and optical quenching effects in suspended GaN nanomembranes

O. Volciuc, T. Braniste, I. M. Tiginyanu, M. A. Stevens-Kalceff, J. Ebeling, T. Aschenbrenner, D. Hommel, V. Ursaki and J. Gutowski

Appl. Phys. Lett. 103, 243113 (2013)

The impact of the discreteness of low-fluence ion beam processing on the spatial architecture of GaN nanostructures fabricated by surface charge lithography

I. M. Tiginyanu,O. Volciuc,M. A. Stevens-Kalceff, V. Popa, J. Gutowski, S. Wille, R. Adelung, and H. Föll

Surface Engineering and Applied Electrochemistry 49, 1 (2013)

Blue lasing and strong coupling in ZnSe monolithic microcavities

K. Sebald, M. Seyfried, S. Klembt, C. Kruse, T. Aschenbrenner, D. Hommel, S. Bley, A. Rosenauer, and J. Gutowski

physica status solidi (c) 10, 1230 (2013)

Oxygen-controlled photoconductivity ZnO nanowires functionalized with colloidal CdSe quantum dots

D. Hou, A. Dev, K. Frank, A. Rosenauer, T. Voss

J. Phys. Chem. C 116, 36, 19604 (2012)

Strong coupling in monolithic microcavities with ZnSe quantum wells

K. Sebald, M. Seyfried, S. Klembt, S. Bley, A. Rosenauer, D. Hommel, and C. Kruse

Appl. Phys. Lett. 100, 161104 (2012)

Blue monolithic II-VI-based vertical-cavity surface-emitting laser

S. Klembt, M. Seyfried, T. Aschenbrenner, K. Sebald, J. Gutowski, D. Hommel, and C. Kruse

Appl. Phys. Lett. 100, 121102 (2012)

Optical properties of single InGaN quantum dots and their devices

K. Sebald, J. Kalden, H. Lohmeyer, and J. Gutowski

Phys. Status Solidi B 248, 1777 (2011)

Microphotoluminescence studies on GaN-based airpost pillar microcavities containing InGaN quantum wells and quantum dots

K. Sebald, H. Lohmeyer, J. Kalden, M. Seyfried, S. Figge, C. Kruse, H. Dartsch, C. Tessarek, D. Hommel, and J. Gutowski

Phys. Status Solidi B 248, 1756 (2011)

Composition mapping in InGaN by scanning transmission electron microscopy

A. Rosenauer, T. Mehrtens, K. Müller, K. Gries, M. Schowalter, P. V. Satyam, S. Bley, C. Tessarek, D. Hommel, K. Sebald, M. Seyfried, J. Gutowski, A. Avramescu, K. Engl, and S. Lutgen

Ultramicroscopy 111, 1316 (2011)

Strong phase separation of strained InxGa1−xN layers due to spinodal and binodal decomposition: Formation of stable quantum dots

C. Tessarek, S. Figge, T. Aschenbrenner, S. Bley, A. Rosenauer, M. Seyfried, J. Kalden, K. Sebald, J. Gutowski, and D. Hommel

Physical Review B 83, 115316 (2011)

Light-emitting diode based on mask- and catalyst-free grown N-polar GaN nanorods

G. Kunert, W. Freund, T. Aschenbrenner, C. Kruse, S. Figge, M.Schowalter, A. Rosenauer, J. Kalden, K. Sebald, J. Gutowski, M .Feneberg, I. Tischer, K. Fujan, K. Thonke, and D Hommel

Nanotechnology 22, 265202 (2011)

Optical properties of InGaN quantum dots in monolithic pillar microcavities

K. Sebald, M. Seyfried, J. Kalden, J. Gutowski, H. Dartsch, C. Tessarek, T. Aschenbrenner, S. Figge, C. Kruse, D. Hommel, M. Florian, and F. Jahnke

Appl. Phys. Lett. 96, 251906 (2011)

Optical polariton properties in ZnSe-based planar and pillar structured microcavities

K. Sebald, A. Trichet, M. Richard, L. S. Dang, M. Seyfried, S. Klembt, C. Kruse and D. Hommel

Eur. Phys. J. B 84, 381 (2011)

Optical properties of photonic molecules and elliptical pillars made of ZnSe-based microcavities

K. Sebald, M. Seyfried, S. Klmebt, and C. Kruse

Optics Express 19, 19422 (2011)

Electroluminescence from isolated single indium gallium nitride quantum dot up to 150 K

J. Kalden, C. Tessarek, K. Sebald, S. Figge, C. Kruse, D. Hommel, and J. Gutowski

Phys. Status Solidi A 207, 6, 1428 (2010)

8th International Conference on Nitride Semiconductors – ICNS 8 October 18-23, 2009 in Jeju, South Korea

Electroluminescence from a single InGaN quantum dot in the green spectral region up to 150 K

J. Kalden, C. Tessarek, K. Sebald, S. Figge, C. Kruse, D. Hommel, and J. Gutowski

Nanotechnology 21, 1, 015204 (2010)

Highly ordered catalyst- and mask-free GaN nanorods on r-plane sapphire

T. Aschenbrenner, C. Kruse, G. Kunert, S. Figge, K. Sebald, J. Kalden, T. Voss, J. Gutowski and D. Hommel

Nanotechnology 20, 7, 075604 (2009)

Optical properties and modal gain of InGaN quantum dot stacks

J. Kalden, K. Sebald, J. Gutowski, C. Tessarek, T. Aschenbrenner, S. Figge, and D. Hommel

International Workshop on Nitride Semiconductors
October 6-10, 2008 in Montreux, Switzerland
Phys. Status Solidi C 6, S2 590 (2009)
also available via arXiv.org

Optical properties of GaN nanorods grown catalyst-free on r-plane sapphire

K. Sebald, J. Kalden, T. Voss, J. Gutowski, T. Aschenbrenner, G. Kunert, C. Kruse, S. Figge, and D. Hommel

International Workshop on Nitride Semiconductors
October 6-10, 2008 in Montreux, Switzerland
phys. stat. sol. (c) 6, S2, 578 (2009)

Influence of piezoelectric fields on excitonic complexes in InGaN quantum dots

K. Sebald, J. Kalden, S. Herlufsen, H. Lohmeyer, C. Tessarek, T. Yamaguchi, S. Figge, D. Hommel, J. Gutowski

phys. stat. sol. (c) 6,4, 872 (2009)

Properties and prospects of blue-green emitting II-VI-based monolithic microcavities

K. Sebald, C. Kruse, and J. Wiersig

phys. stat. sol. (b) 248, 255(2009)

A CdSe quantum dot based resonant cavity light-emitting diode showing single line emission up to 90 K

A. Gust, C. Kruse, K. Otte, D. Hommel, J. Kalden, T. Meeser, K. Sebald, J. Gutowski, and D. Hommel

Nanotechnology 20,1, 015401 (2009)

Optical Properties of Single and Multi-Layer InGaN Quantum Dots

K. Sebald, H. Lohmeyer, S. Herlufsen, J. Kalden, J. Gutowski, C. Tessarek, T. Yamaguchi, and D. Hommel

7th International Conference of Nitride Semiconductors
September 16-21, 2007 in Las Vegas, Nevada, USA
phys. stat. sol. (c) 5,.6, 1883 (2008)

Integration of InGaN quantum dots into nitride-based microcavities

C. Kruse, S. Figge, H. Dartsch, C. Tessarek, D. Hommel, H. Lohmeyer, J. Kalden, K. Sebald, and J. Gutowski

7th International Conference of Nitride Semiconductors
September 16-21, 2007 in Las Vegas, Nevada, USA
phys. stat. sol. (c) 5, 6, 2320 (2008)

Wide-bandgap quantum dot based microcavity VCSEL structures

K. Sebald, H. Lohmeyer, J. Gutowski, C. Kruse, R. Kröger, T. Yamaguchi, A. Gust, D. Hommel, J. Wiersig, and F. Jahnke

Advances in Solid State Physics 47, 29 (2008)

Green Laser emission from monolithic II-VI-based pillar microcavities near room temperature

C. Kruse, H. Lohmeyer, K. Sebald, J. Gutowski, D. Hommel, J. Wiersig, and F. Jahnke

Appl. Phys. Lett. 92, 31101 (2008)

Fine tuning of quantum-dot pillar microcavities by focused ion beam milling

H. Lohmeyer, J. Kalden, K. Sebald, C. Kruse, D. Hommel, and J. Gutowski

Appl. Phys. Lett. 92, 011116 (2008)

On the way to InGaN quantum dots embedded into monolithic nitride cavities

K. Sebald, H. Lohmeyer, J. Gutowski, T. Yamaguchi, C. Kruse, D. Hommel, J. Wiersig, and F. Jahnke

Int. Workshop on Nitride Semiconductors, Kyoto, Japan, 2006
phys. stat. sol. (b) 244, 1806 (2007)

Enhanced spontaneous emission of CdSe/ZnSe quantum dots in monolithic II-VI pillar microcavities

H. Lohmeyer, K. Sebald, C. Kruse, D. Hommel, and J. Gutowski

28th Int. Conference on the Physics of Semiconductors, Vienna, Austria, 2006
AIP Conf. Proc. 893, 1147 (2007)

Optical Properties of Single InGaN Quantum Dots up to 150 K

K. Sebald, H. Lohmeyer, J. Gutowski, T. Yamaguchi, and D. Hommel

4th Int. Conference on Quantum Dots, Chamonix-Mont Blanc, France, 2006
phys. stat. sol. (c) 3, 3864 (2006).

A novel approach for the growth of InGaN quantum dots

T. Yamaguchi, K. Sebald, H. Lohmeyer, S. Gangopahyay, J. Falta, J. Gutowski, S. Figge, and D. Hommel

4th Int. Conference on Quantum Dots, Chamonix-Mont Blanc, France, 2006
phys. stat. sol. (c) 3, 3955 (2006)

The State of Strain in Single GaN Nanocolumns As Derived from Micro-Photoluminescence Measurements

N. Thillosen, K. Sebald, H. Hardtdegen, R. Meijers, R. Calarco, S. Montanari, N. Kaluza, J. Gutowski, and H. Lüth

Nano Lett. 6, 4, 704 (2006)

Enhanced spontaneous emission of CdSe quantum dots in monolithic II-VI pillar microcavities

H. Lohmeyer, C. Kruse, K. Sebald, J. Gutowski, and D. Hommel

Appl. Phys. Lett. 89, 091107 (2006)

Efficient Coupling into Confined Optical Modes of ZnSe-based Pillar Microcavities

H. Lohmeyer, K. Sebald, J. Gutowski, C. Kruse, D. Hommel, J. Wiersig, N. Baer, and F. Jahnke

12th International Conference on II-VI Compounds, Warsaw, 2005
phys. stat. sol. (b) 243, 844 (2006)

Growth and characterization of self-assembled CdSe quantum dots in MgS barriers

A. Gust, C. Kruse, K. Sebald, H. Lohmeyer, J. Gutowski, and D. Hommel

12th International Conference on II-VI Compounds, Warsaw, 2005
phys. stat. sol. (c) 3, 767 (2006)

Confined optical modes in monolithic II-VI pillar microcavities

H. Lohmeyer, K. Sebald, C. Kruse, R. Kröger, J. Wiersig, N. Baer, F. Jahnke, J. Gutowski, and D. Hommel

Appl. Phys. Lett. 88, 051101 (2006)

Coherent control of the exciton and exciton-biexciton transitions in a semiconductor quantum well studied in nonlinear wave-mixing signals

T. Voss, I. Rückmann, J. Gutowski, V. M. Axt, and T. Kuhn

Phys. Rev. B 73, 115311 (2006)

Coherent control of exciton-biexciton beats: direction selectivity of four-wave-mixing signals in experiment and microscopic theory
T. Voss, I. Rückmann, J. Gutowski, V. M. Axt, and T. Kuhn
8th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors
phys. stat. sol. (b) 243,10, 2410 (2006)

Coherent Control of Excitonic Excitations in II-VI Quantum Wells

T. Voss, H. G. Breunig, I. Rückmann, and J. Gutowski (invited)

12th International Conference on II-VI Compounds, Warsaw (2005)
phys. stat. sol. (b) 243, 813 (2006)

CdSe quantum dots coupled to modes of monolithic II-VI pillar microcavities: tunability and Purcell effect

H. Lohmeyer, C. Kruse, K. Sebald, J. Gutowski, and D. Hommel

4th Int. Conference on Quantum Dots, Chamonix-Mont Blanc, France, 2006
phys. stat. sol. (c) 3, 3680 (2006)

Optical coherent manipulation of polariton modes and of their radiative decay

I. Kudyk, T. Voss, I. Rückmann, J. Gutowski, S. Schumacher, and F. Jahnke

Phys. Rev. B 73, 235345 (2006)

Comparative investigation of quantum-dot-like localization centers in InGaN quantum well and quantum dot structures

K. Sebald, H. Lohmeyer, J. Gutowski, T. Yamaguchi, and D. Hommel

MRS Fall Meeting 2005, Boston (USA)
Mater. Res. Soc. Symp. Proc. 892, FF25-02.1 (2006)

Epitaxial Growth of InGaN Quantum Dots Grown by MOVPE: Effect of Capping Process on Structural and Optical Properties

T. Yamaguchi, K. Sebald, J. Gutowski, S. Figge, and D. Hommel

MRS Fall Meeting 2005, Boston (USA)
Mater. Res. Soc. Symp. Proc. 892, FF11-01.1 (2006)

Micro-photoluminescence studies of InGaN/GaN quantum dots up to 150 K

K. Sebald, H. Lohmeyer, J. Gutowski, T. Yamaguchi, and D. Hommel

6th International Conference on the Physics of Nitride Semiconductors, Bremen (2005)
phys. stat. sol. (b) 243, 1661 (2006)

Crack-free monolithic nitride vertical-cavity surface-emitting laser structures and pillar microcavities

H. Lohmeyer, K. Sebald, C. Kruse, R. Kröger, J. Gutowski, D. Hommel, J. Wiersig, and F. Jahnke

6th International Conference on the Physics of Nitride Semiconductors, Bremen (2005)
phys. stat. sol. (a) 203, 1749 (2006)

Microphotoluminescence studies of excitonic and multiexcitonic states of quantum dot-like localization centers in InGaN/GaN structures

K. Sebald, H. Lohmeyer, J. Gutowski, S. Einfeldt, C. Roder, and D. Hommel

MRS Fall Meeting 2004, Boston (USA)
Mater. Res. Soc. Symp. Proc. 831, E5.3.1 (2005)

ZnSe-based laser diodes: New approaches

A. Gust, C. Kruse, M. Klude, E. Roventa, R. Kröger, K. Sebald, H. Lohmeyer, B. Brendemühl, J. Gutowski, and D. Hommel (invited)

E-MRS Fall Meeting, Warsaw (Poland) 2004
phys. stat. sol. (c) 2, 3, 1098 (2005)

Resonant modes in monolithic nitride pillar microcavities

H. Lohmeyer, K. Sebald, J. Gutowski, R. Kröger, C. Kruse, D. Hommel, J. Wiersig, and F. Jahnke

European Physical Journal B 48, 291 (2005)

Room-temperature operation of a green monolithic II-VI vertical-cavity surface-emitting laser

C. Kruse, K. Sebald, H. Lohmeyer, B. Brendemühl, R. Kröger, J. Gutowski,and D. Hommel

27th International Conference on the Physics of Semiconductors, Flagstaff (USA) 2004
AIP Conf. Proc. 772, 1521 (2005)

Coherent Propagation of Polaritons in Semiconductor Heterostructures: Nonlinear Pulse Transmission in Theory an Experiment

S. Schumacher, G. Czycholl, F. Jahnke, I. Kudyk, L. Wischmeier, T. Voss, I. Rückmann, J. Gutowski, A. Gust, and D. Hommel

Phys. Rev. B 72, 081308(R) (2005)

Microphotoluminescence of strongly localized states in InGaN/GaN layers - emission of quantum dots?

H. Lohmeyer, K. Sebald, J. Gutowski, S. Einfeldt, and D. Hommel

Int. Workshop on Nitride Semiconductors, Pittsburgh (USA) 2004
phys. stat. sol. (c) 2, 7, 2744 (2005)

Green Monolithic II-VI Vertical Cavity Surface Emitting Laser Operating at Room Temperature

C. Kruse, S. M. Ulrich, G. Alexe, E. Roventa, R. Kröger, B. Brendemühl, P. Michler, J. Gutowski, D. Hommel (invited)

11th International Conference II-VI Compounds, Niagara Falls (USA) 2003
phys. stat. sol (b) 241, 731 (2004)

Polariton propagation in shallow-confinement heterostructures: Microscopic theory and experiment showing the breakdown of the dead-layer concept

S. Schumacher, G. Czycholl, F. Jahnke, I. Kudyk, H. I. Rückmann, J. Gutowski, A. Gust, G. Alexe, and D. Hommel

Phys. Rev. B 70, 235340 (2004)

Light-polarization and intensity dependence of higher-order nonlinearities in excitonic FWM signals

M. Buck, L. Wischmeier, S. Schumacher, G. Czycholl, F. Jahnke, T. Voss, I. Rückmann, and J. Gutowski

Eur. Phys. J. B 42, 175 (2004)

Estimating the Memory Time Induced by Eciton-Exciton Scattering

V. M. Axt, T. Kuhn, B. Haase, U. Neukirch, and J.Gutowski

Phys. Rev. Lett. 93, 127402 (2004)

Dynamics of Excitons and Exciton Complexes in Wide-Gap Semiconductors

Jürgen Gutowski, Hans-Georg Breunig, and Tobias Voss (invited)

H. Kalt, M. Hetterich (eds.), Optics of Semiconductors and Their Heterostructures, Springer Series in Solid State Sciences 146 (2004), pp. 133 - 157

Excitation-induced dephasing and biexcitonic effects in the coherent control of excitonic polarization in pulse-transmission experiments

T. Voss, H. G. Breunig, I. Rückmann, and J. Gutowski

Phys. Rev. B 69, 205318 (2004)

Real-Time Observation of the Coherent Control of Linear and Four-Wave-Mixing Polarization of Excitons in a ZnSe Single Quantum Well

T. Voss, H. G. Breunig, I. Rückmann, and J. Gutowski

13th Int. Conf. Nonequilibrium Carrier Dynamics in Semiconductors (HCIS 13), Modena (Italy) 2003
Semiconductor Science and Technology 19, S128 (2004)

Influence of the Carrier Density on the Optical Gain and Refractive Index Change in InGaN Laser Structures

M. Röwe, P. Michler, J. Gutowski, V. Kümmler, A. Lell, and V. Härle

5th Int. Conf. Nitride Semiconductors, Nara (Japan) 2003
phys. stat. sol. (a) 200, 135 (2003).

Influence of the Growth Kinetics on the Indium Distribution during MOVPE Growth of InGaN Quantum Wells

E. Hahn, A. Rosenauer, D. Gerthsen, J. Off, F. Scholz, M. Vehse, and J. Gutowski

5th Int. Conf. Nitride Semiconductors, Nara (Japan) 2003
phys. stat. sol. (c) 0, 2171 (2003).

Optical gain, gain saturation, and waveguiding in group III-nitride heterostructures

M. Röwe, M. Vehse, P. Michler, J. Gutowski, S. Heppel, and A. Hangleiter

phys. stat. sol. (c) 0, 1860 (2003)

Single-photon and photon-pair emission from CdSe/Zn(S,Se) quantum dots

S. Strauf, S. Ulrich, K. Sebald, P. Michler, T. Passow, D. Hommel, G. Bacher, and A. Forchel

phys. stat. sol. (b) 238, 321 (2003)

11th International Conference on II-VI Compounds (II-VI 2003), Niagara Falls, USA, 22-26 September 2003

J. Gutowski (Conference report, invited)

phys. stat. sol. (b) 240, 269 (2003)

Optical Coherent Control and Phase Shift of Excitonic and Biexcitonic Four-wave-mixing Polarization

T. Voss, H. G. Breunig, I. Rückmann, and J. Gutowski

Opt. Commun. 218, 415 (2003)

Influence of Higher Coulomb Correlations on Optical Coherent-control Signals from a ZnSe Quantum Well

H. G. Breunig, T. Voss, I. Rückmann, J. Gutowski, V. M. Axt, and T. Kuhn

J. Opt. Soc. Am. B 20, 1769 (2003)

Excitons in Wide-Gap Semiconductors: Coherence, Dynamics, and Lasing

J. Gutowski, P. Michler, H. I. Rückmann, H. G. Breunig, M. Röwe, K. Sebald, and T. Voss (invited)

Special Issue to the Honor of R. Zimmermann, phys. stat. sol. (b) 234, 70 (2002).

Influence of the Layer Design on the Far Field Pattern in GaN Based Laser Structures

M. Röwe, P. Michler, J. Gutowski, S. Bader, G. Brüderl, V. Kümmler, A. Weimar, A. Lell, and V. Härle

Int. Workshop on Nitride Semiconductors, Aachen (Germany) 2002
phys. stat. sol. (a) 194, 414 (2002)

Analysis of Gain Saturation Behavior in GaN Based Quantum Well Lasers

M. Vehse, J. Meinertz, O. Lange, P. Michler, J. Gutowski, S. Bader, G. Brüderl, H. A. Lell, and V. Härle

Int. Workshop on Nitride Semiconductors, Aachen (Germany) 2002
phys. stat. sol. (c) 0, 43 (2002)

Influence of the barrier height on carrier recombination and transparancy density in GaN-based laser structures

M. Vehse, P. Michler, I. Gösling, M. Röwe, J. Gutowski, S. Bader, A. Lell, G. Brüderl, and V. Härle

Appl. Phys. Lett., 80, 755 (2002)

Single-photon emission of CdSe quantum dots at temperatures up to 200 K

K. Sebald, P. Michler, T. Passow, D.Hommel, G. Bacher, and A. Forchel

Appl. Phys. Lett. 81, 2920 (2002)

On the Way to the II-VI Quantum Dot VCSEL

T. Passow, M. Klude, C. Kruse, K. Leonardi, R. Kröger, G. Alex, K. Sebald, S. Ulrich, P. Michler, J. Gutowski, H. Heinke, and D. Hommel (invited)

Spring Meeting of the German Physical Society, Regensburg (Germany) 2002
Advances in Solid State Physics 42, 13 (2002)

Excitons in Wide-Gap Semiconductors: Coherence, Dynamics, and Lasing

J. Gutowski, P. Michler, H. I. Rückmann, H. G. Breunig, M. Röwe, K. Sebald, T. Voss (invited)

phys. stat. sol. (b) 234, 70 (2002) Special Issue to the Honor of R. Zimmermann

Interplay of the trion singlet and triplet state transitions in magnetooptical and time-resolved investigation of ZnSe/Zn(S,Se) single quantum wells

J. Gutowski, K. Sebald, C. Roder, P. Michler, M. Klude, H. Wenisch, and D. Hommel

10th International Conference on II-VI Compounds, Bremen, Germany, September 9-14, 2001
phys. stat. sol. (b) 229, 653 (2002)

Optical Gain of CdSe Quantum Dot Stacks

K. Sebald, P. Michler, J. Gutowski, R. Kröger, T. Passow, M. Klude, and D. Hommel

7th International Conference on Optics and Excitons in Confined Systems, Montpellier (France) 2001
phys. stat. sol (a) 190, 593 (2002)

Displaced Substitutional Phosphorus Acceptors in Zinc Selenide

D. Wolverson, J. J. Davies, S. Strauf, P. Michler, J. Gutowski, M. Klude, H. Heinke, D. Hommel, E. Tourniee, and J.-P. Faurie

10th International Conference on II-VI Compounds, Bremen, Germany, September 9-14, 2001
phys. stat. sol. (b) 229, 257 (2002)

Quantum Optical Studies on Individual Acceptor Bound Excitons in a Semiconductor

S. Strauf, P. Michler, M. Klude, D. Hommel, G. Bacher, and A. Forchel

Phys. Rev. Lett. 89, 177403 (2002)

Negatively charged donor centers in ultrathin ZnSe:N layers

S. Strauf, P. Michler, J. Gutowski, M. Klude, D. Hommel, D. Wolverson, and J.J. Davies

10th International Conference on II-VI Compounds, Bremen, Germany, September 9-14, 2001
phys. stat. sol. (b) 229, 621 (2002)

Coherent control of biexcitonic polarization

H. G. Breunig, T. Voss, I. Rückmann, and J. Gutowski

Phys. Rev. B 66, 193302 (2002)

Biexcitonic effects in the coherent control of the excitonic polarization detected in six-wave-mixing signals

T. Voss, H. G. Breunig, I. Rückmann, J. Gutowski, V. M. Axt, and T. Kuhn

Physical Review B 66, 155301 (2002)

Evidence of density-dependent dephasing in interferometric four-wave-mixing experiments on heavy-hole excitons in ZnSe quantum wells

H. G. Breunig, T. Trüper, I. Rückmann, J. Gutowski, and F. Jahnke

Physica B 314, 283 (2002)

Influence of the Transverse and Lateral Waveguide on the Far Field Pattern in GaN Based Laser Structures

M. Röwe, P. Michler, J. Gutowski, S. Bader, B. Hahn, V. Kümmler, A. Weimar, A. Lell, and V. Härle

4th International Conference on Nitride Semiconductors, Denver, Colorado USA, July 16-20, 2001
phys. stat. sol. (a), 188,1, 65 (2001)

Correlation of Barrier Height and Nonradiative Carrier Recombination and the Consequences for Optical Gain in GaN Based Laser Structures

M. Vehse, P. Michler, I. Gösling, M. Röwe, J. Gutowski, S. Bader, A. Lell, G. Brüderl, and V. Härle

4th International Conference on Nitride Semiconductors, Denver, Colorado USA, July 16-20, 2001
phys. stat. sol. (a), 188,1, 109 (2001)

Analysis of Time-Resolved Donor-Acceptor-Pair Recombination in MBE and MOVPE Grown GaN:Mg

S. Strauf, S. M. Ulrich, P. Michler, J. Gutowski, T. Böttcher, S. Figge, S. Einfeldt, and D. Hommel

Forth International Conference on Nitride Semiconductors, Denver, Colorado USA, July 16-20, 2001
phys. stat. sol. (b) 228, 2, 379 (2001)

Influence of composition and well-width fluctuations on optical gain in (In,Ga)N multiple quantum wells

M. Vehse, P. Michler, J. Gutowski, S. Figge, D. Hommel, H. Selke, S. Keller, S. P. DenBaars

Semicond. Sci. Technol. 16, 406 (2001)

Optical gain and saturation in nitride-based laser structures

M. Vehse, P. Michler, O. Lange, M. Röwe, J. Gutowski, S. Bader, H.-J. Lugauer, G. Brüderl, A. Weimar, A. Lell, and V. Härle

Appl. Phys. Lett. 79, 1763 (2001)

Fine structure of the amplified spontaneous emission of ZnSe laser structures

R. Heinecke, U. Neukirch, P. Michler, and J. Gutowski

25nd International Conference on the Physics of Semiconductors, Osaka, (Japan), September 17-22, (2000) Proceedings of the 25th International Conference on the Physics of Semiconductors, Osaka 2000Eds N. Miura, T. Ando,
Springer Proc. in Physics 87, 585 (2001)

Direct evidence for the trigonal symmetry of shallow phosporus acceptors in ZnSeJ.

J. Davies, D. Wolverson, S. Strauf, P. Michler, J. Gutowski, M. Klude, K. Ohkawa, D. Hommel, E. Tournie, and J.-P. Faurie

Phys. Rev. B 64, 205206 (2001)

Gain saturation in (In,Ga)N/GaN/(Al,Ga)N laser structures

P. Michler, O. Lange, M. Vehse, J. Gutowski, S. Bader, B. Hahn, H.-J. Lugauer and V. Härle

3nd International Symposium on Blue Laser and Light Emitting Diodes, Zeuthen/Berlin, Germany, 6-10 March 2000
phys. stat. sol. (a) 180, 391 (2000)

Temperature Dependence of Magnesium Related Optical Transitions in GaN:Mg

S. Strauf, S. Ulrich, P. Michler, J. Gutowski, V. Kirchner, S. Figge, S. Einfeldt, and D. Hommel

Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series 1 pp. 721-724 (2000)

Determination of compensation ratios and concentration of compensating impurities in semiconductors

J. Gutowski, P. Bäume, M. Behringer, and D. Hommel

25nd International Conference on the Physics of Semiconductors, Osaka, (Japan), September 17-22 (2000).Proceedings of the 25th International Conference on the Physics of SemicondutorsSpringer, Eds N. Miura, T. Ando, p 1405-1406 (2000)

Shallow donors in ultrathin nitrogen doped ZnSe layers - a novel or a disregarded compensation mechanism in II-VI device structures?

S. Strauf, P. Michler, J. Gutowski, M. Klude, and D. Hommel

9th International Conference on II-VI Compounds, November 1-5, Kyoto, Japan 1999
Journal of Cryst. Growth. 214/215, 497 (2000)

Negatively charged trion in ZnSe single quantum wells with very low electron densities

O. Homburg, K. Sebald, P. Michler, J. Gutowski, H. Wenisch, and D. Hommel

Phys. Rev. B 62, 7413 (2000)

The trion spin-singlet and -triplet states in ZnSe single quantum wells

O. Homburg, P. Michler, K. Sebald, J. Gutowski, H. Wenisch, and D. Hommel

9th International Conference on II-VI Compounds, November 1-5, Kyoto, Japan 1999
Journal of Cryst. Growth. 214/215, 832-836 (2000)

Magnetooptics of trions in ZnSe/(Zn,Mg)(S,Se) single quantum wells

K. Sebald, O. Homburg, P. Michler, J. Gutowski, M. Klude, H. Wenisch, and D. Hommel

25nd International Conference on the Physics of Semiconductors, Osaka, (Japan), September 17-22, (2000).Proceedings of the 25th International Conference on the Physics of Semicondutors

Springer, Eds N. Miura, T. Ando, p 1523 (2000)

Polariton-biexciton transitions in a semiconductor microcavity

U. Neukirch, S.R. Bolton, N. Fromer, L.J. Sham, and D.S. Chemla

Physical Review Letters 84, 2215 (2000)

Influence of barrier doping and barrier composition on optical gain in (In,Ga)N MQWs

M. Vehse, P. Michler, J. Gutowski, S. Figge, D. Hommel, H. Selke, P. Ryder, S. Keller and S. P. DenBaars

Third International Conference on Nitride Semiconductors (ICNS3), Montpellier, France, 1999
phys. stat. sol. (b) 216, 331 (1999)

Optical spectroscopy of Mg- and C-related donor and acceptor levels in GaN grown by MBE

S. Strauf, P. Michler, J. Gutowski, U. Birkle, M. Fehrer, S. Einfeld, and D. Hommel

Third International Conference on Nitride Semiconductors (ICNS3), Montpellier, France, 1999
phys. stat. sol. (b) 216, 557 (1999)

Studies on Carbon as Alternative P-Type Dopant for Gallium Nitride

U. Birkle, M. Fehrer, V. Kirchner, S. Einfeldt, D. Hommel, S. Strauf, P. Michler, and J. Gutowski

MRS Internet J. Nitride Semicond. Res. 4S1. G5.6 (1999)

Biexcitonic gain characteristics in ZnSe-based lasers with binary wells

O. Homburg, P. Michler, R. Heinecke, J. Gutowski, H. Wenisch, M. Behringer, and D. Hommel

Phys. Rev. B 60, 5743 (1999)

Gain characteristics of ZnSe/(Zn,Mg)(S,Se)/(Zn,Mg)(S,Se) quantum-well lasers

P. Michler, M. F. Pereira Jr., O. Homburg, L. Nerger, J. Gutowski, H. Wenisch, and D. Hommel

Proceedings SPIE 3625, Physics and Simulation of Optoelectronic Devices, 1999

Gain mechanisms in ZnSe based separate-confinement-heterostructure lasers with binary wells

O. Homburg, P. Michler, H. Wenisch, M. Behringer, J. Gutowski, and D. Hommel

24nd International Conference on the Physics of Semiconductors, Jerusalem (Israel), August 2-7, (1998)
Ed. E. Gershoni, World Scientific (Singapore) 1999, IX B 36

Manifestation of exciton amplitude fluctuations in the transient polarisation state of four-wave-mixing signals

B. Haase, U. Neukirch, J. Gutowski, G. Bartels, A. Stahl, V.M. Axt, J. Nürnberger, and W. Faschinger

Physical Review B 59, R7805 (1999)

Donor-acceptor-pair recombination for impurity identification and analysis of cubic inclusions in Mg- and C-doped MBE grown hexagonal GaN

S. Strauf, P. Michler, J. Gutowski, U. Birkle, S. Einfeldt, V. Kirchner, H. Heinke, and D. Hommel

Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes, Kisarazu, Chiba, Japan
Eds. A. Yoshikawa et al., Ohmsha Ldt. (Tokyo), p. 574, 1998

Excitonic Transitions in MBE Grown h-GaN with Cubic Inclusions

S. Strauf, P. Michler, J. Gutowski, H. Selke, U. Birkle, S. Einfeldt, and D. Hommel

Journal of Cryst. Growth 189/190, 682 (1998)

Influence of Coulomb correlations on gain and stimulated emission in (Zn,Cd)Se/Zn(S,Se)/(Zn,Mg)(S,Se) quantum well lasers

P. Michler, M. Vehse, J. Gutowski, K. Behringer, D. Hommel, M. F. Pereira, and K. Henneberger

Phys. Rev. B 58, 2055 (1998)

Compensation mechanisms in ZnSe:N and codoped ZnSe:N:Cl

M. Behringer, P. Bäume, J. Gutowski, and D. Hommel

Phys. Rev. B 57, 12869 (1998)

Temperature dependent gain characteristics of ZnSe based separate-confinement heterostructure lasers with binary wells

P. Michler, M. F. Pereira Jr., O. Homburg, L. Nerger, J. Gutowski, H. Wenisch, and D. Hommel

Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes Kisarazu, Chiba, Japan, Eds. A. Yoshikawa et al.,Ohmsha Ldt. (Tokyo) p. 528, 1998

Spectro-temporal gain dynamics of optically pumped II-VI multiple quantum well structures

K. Wundke, U. Neukirch, P. Michler, J. Gutowski, M. Behringer, and D. Hommel

8th International Conference on II-VI Compounds, 25 - 29 August 1997, Grenoble, France
Journal of Crystal Growth 184/185, 637 (1998)

Optical gain characteristics and excitonic nonlinearities in II-VI laser diodes

P. Michler, M. Vehse, J. Gutowski, M. Behringer, D. Hommel, M. F. Pereira Jr. and K. Henneberger

8th International Conference on II-VI Compounds, 25 - 29 August 1997, Grenoble, France
Journal of Crystal Growth 184/185, 575 (1998)

Quantum confined Stark effect of II-VI heterostructures suitable as modulators in the blue-green spectral region

P. Michler, T. Lilienkamp, W. Ebeling, J. Gutowski, M. Behringer, M. Fehrer, and D. Hommel

Appl. Phys. Lett. 72, 3320 (1998)

Electric-field-dependent absorption of ZnSe-based quantum wells: The transition from two-dimensional to three-dimensional behavior

D. Merbach, E. Schöll, W. Ebeling, P. Michler, and J. Gutowski

Phys. Rev. B 58, 10709 (1998)

Dynamics of gain and stimulated emission in II-VI laser diodes

P. Michler, U. Neukirch, K. Wundke, J. Gutowski, M. Behringer, D. Hommel, H. Güldner, and K.Henneberger

Fifth International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors, Graal-Müritz, Germany, September 1-5, 1997
phys. stat. sol. (b), 206, 399 (1998)

Identification of higher-order electronic coherences in semiconductors by their signature in four-wave-mixing signals

G. Bartels, A. Stahl, V.M. Axt, B. Haase, U. Neukirch, and J. Gutowski

Phys. Rev. Lett. 81, 5880 (1998)

Excitonic optical nonlinearities and dynamics in II-VI heterostructures and laser diodes

J. Gutowski, U. Neukirch, P. Michler, B. Haase, and K. Wundke

Journal of Chrystal Growth 184/185, 662 (1998)

Density dependence of the exciton energy in semiconductors

G. Manzke, Q.Y. Peng, K. Henneberger, U. Neukirch, K. Hauke, K. Wundke, J. Gutowski, and D. Hommel

Phys. Rev. Lett. 80, 4943 (1998)

Lateral motion of confined excitonic polaritons

U. Neukirch, G. Bley, J. Gutowski, and D. Hommel

Phys. Rev. B 57, 9208 (1998)