Publikationen AG Eickhoff
β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy Sushma Raghuvansy, Jon P. McCandless, Marco Schowalter, Alexander Karg, Manuel Alonso-Orts, Martin S. Williams, Christian Tessarek, Stephan Figge [...] α-(InxGa1−x)2O3 on m-plane α-Al2O3 by molecular beam epitaxy Martin S. Williams, Manuel Alonso-Orts, Marco Schowalter, Alexander Karg, Sushma Raghuvansy, Jon P. McCandless, Debdeep Jena, Andreas Rosenauer [...] on of sputter-deposited Ga 2 O 3 -based memristive devices Aman Baunthiyal, Jon-Olaf Krisponeit, Marco Schowalter, Thorsten Mehrtens, Alexander Karg, Andreas Rosenauer, Martin Eickhoff, Jens Falta Applied