Intermediate status of dissertation focusing on channel properties of gallium nitride power transistors

Veranstalter:in : FB1, Kontakt: Prof. Dr.-Ing. Karl-Ludwig Krieger
Ort : Gebäude NW1, Raum W 1040
Beginn : 20. Oktober 2023, 10:00 Uhr
Ende : 20. Oktober 2023, 11:30 Uhr


Mirjam Henn, M.Sc., Institut für Elektrische Antriebe, Leistungselektronik und Bauelemente (IALB)


Inviting Professor:

Prof. Dr. Nando Kaminski



Due to its high breakdown field strength, gallium nitride (GaN) is an attractive material for next-generation power devices, especially in the automotive sector.

In comparison to the already industrialized GaN high electron mobility transistors (HEMTs), metal-oxide-semiconductor field-effect-transistors (MOSFETs) are better suited to achieve the high power densities and breakdown voltages required for automotive applications.

After the previous dissertation focused on the gate dielectric breakdown behaviour in the transistor's off-state, the attention is now directed to the transistor's on-state. The on-state and thus the transistor channel properties are in general determined by the gate dielectric-semiconductor interface.  

This talk will discuss the influence of chemical and thermal pre- and post-treatments on the gate dielectric-semiconductor interface and how these processes can be combined to improve crucial transistor properties, such as channel mobility and threshold voltage.