Dr. Fabien Massabuau
Department of Physics, SUPA, University of Strathclyde, Glasgow, United Kingdom
Defects in α-phase Ga2O3
Ga2O3 is an emerging yet already technologically important ultrawide bandgap semiconductor. Defects play a vital role in the development of semiconductor devices, often thought to hamper the full potential of the technology. It is therefore crucial to better understand the properties of defects to identify “killer defects” and implement targeted mitigation methods that will lead to step increase in device performance and reliability. Dislocations is one of the most prominent defects in epitaxial Ga2O3, yet their properties are to date unknown.
This presentation will review our recent investigations of the properties of dislocations in αGa2O3 using cathodoluminescence [1], and transmission electron microscopy [2] techniques.
[1] Maruzane et al., J. Phys. D: Appl. Phys. 58 03LT02 (2025) [2] Mullen et al., AIP Adv. 14, 115018 (2024)