Allgemeine Informationen

• Untersuchungsgebiete

  Electron Microscopy
• Techniken

  Scanning Electron Microscopy
  Focused Ion Beam
  Lithography
  
• Hersteller

  Zeiss & Raith
• Herstellungsjahr

  2012 - 2014
• Gemessene Größe

  Dimensions, layer thickness, surface morphology, composition
• Hauptanwendung

  Scanning electron microscopy with up to nm resolution, material deposition, ion beam etching, e-beam lithography, (3D) rapid nano prototyping

Spezifikationen des Geräts

• Technische Aspkete

  SEM: Auriga 40 from Zeiss with energy dispersive X-ray spectroscopy (EDS) from Oxford - X-Max 150 (150mm² detector surface), in-lens-detector for high resolution, energy selective backscatter electron (ESB)-detector for low kV-range, charge compensation (CC), backscatter detector for high kV range

  FIB: Gallium ion source with a long service life of 1500 µAh, optimum lateral resolution < 7.0 nm at 30 kV, energy range 5 kV - 30 kV (preferred operation @ 30 kV), beam current 1 pA - 50 nA, selectable via high-precision motorised aperture changer

  Nanopattering and Lithography: RAITH ELPHY MultiBeam: 20 MHz Digital Signal Processor, 50 ns minimum dwell time with 1 GHz resolution, thermally stabilized 16 bit DA converters, Multi I/O Signal Router, ELPHY NanoSuite software

  Holders for 4 and 6 inch wafers, 9-stub-holder for 12,5 mm diameter pin stubs, holder for one dove tail stub

Kontaktperson

• Anwendungswissenschaftler

  Eva-Maria Meyer
  Fachbereich 1
  NW1 / O 01120
  Telefonnummer 421 218 62617
  emeyerprotect me ?!imsas.uni-bremenprotect me ?!.de
• Reiner Klattenhoff
  , BIAS
  FZB / HB 1080
  Telefonnummer 421 218 58073
  klattenhoffprotect me ?!biasprotect me ?!.de
• Führender Anwendungswissenschaftler

  Björn Lüssem
  Bergmann, Ralf
  

Gerätestandort

• Gebäude

  NW1
• Raum

  O0080
• Fachbereich

  Fachbereich 1
• Institut (Außeruniversitär)

  BIAS
• Institut Der Universität Bremen

  IMSAS