- TechniquesScanning Tunneling Microscopy, X-ray Photoelectron Spectroscopy, and Low-Energy Electron Microscopy
- Fabrication year2012
- Measured quantity3D topography; surface structure; chemical composition
- Main applicationstructural, morphological, and chemical surface characterization of epitaxial thin films and single crystals
- In-situ, real-time compatibleYes
- Technical aspects
Typical samples are epitaxial thin film system on substrates and single crystals (polycrystalline and amorphous samples can also be examined);
The sample dimensions are restricted to max.10x10x3mm. Due to the UHV precautions, all samples are required to be very clean;
For in-situ sample treatment, the maximum scan area of the STM is 1000 nm X 1000 nm;
The XPS provides an energy resolution of approximately 0.3 eV, with characteristic x-ray radiation of Al (1486.6 eV) and Mg (1253.6 eV) for excitation.
- In-situ capabilitiesElectron beam and direct resistive heating options as well as argon sputtering are available.
- Additional measurement possibilitiesThe instrument provides scanning tunneling microscopy/spectroscopy (STM/STS), low energy electron diffraction (LEED) and x-ray photoelectron spectroscopy (XPS) under ultra-high vacuum (UHV).
- Principal investigatorJens Falta
- GroupAG Falta
- BuildingNW 1
- FacultyFachbereich 1
- Institute UniversityIFP