Instrument Database



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General information

  • Investigation area
  • Techniques
    Scanning Tunneling Microscopy, X-ray Photoelectron Spectroscopy, and Low-Energy Electron Microscopy
  • Manufacturer
  • Fabrication year
  • Measured quantity
    3D topography; surface structure; chemical composition
  • Main application
    structural, morphological, and chemical surface characterization of epitaxial thin films and single crystals
  • In-situ, real-time compatible

Instrument specification

  • Technical aspects

    Typical samples are epitaxial thin film system on substrates and single crystals (polycrystalline and amorphous samples can also be examined);

    The sample dimensions are restricted to max.10x10x3mm. Due to the UHV precautions, all samples are required to be very clean;

    For in-situ sample treatment, the maximum scan area of the STM is 1000 nm X 1000 nm;

    The XPS provides an energy resolution of approximately 0.3 eV, with characteristic x-ray radiation of Al (1486.6 eV) and Mg (1253.6 eV) for excitation.

  • In-situ capabilities
    Electron beam and direct resistive heating options as well as argon sputtering are available.
  • Additional measurement possibilities
    The instrument provides scanning tunneling microscopy/spectroscopy (STM/STS), low energy electron diffraction (LEED) and x-ray photoelectron spectroscopy (XPS) under ultra-high vacuum (UHV).


Instrument location

  • Group
    AG Falta
  • Building
    NW 1
  • Room
  • Faculty
    Fachbereich 1
  • Institute University
Updated by: MAPEX