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Publikationen

2020

Adsorption of sulfur on Si(111)
Th. Schmidt, L. Buß, M. Ewert, G. Schönhoff, T. Wehling, and J. Falta
Surf. Sci. 694, (2020), DOI: doi.org/10.1016/j.susc.2019.121561
https://doi.org/10.1016/j.susc.2019.121561
Massively Strained VO2 Thin Film Growth on RuO2
S. Fischer, J.-O. Krisponeit, M. Foerster, L. Aballe, J. Falta, and J. I. Flege
Cryst. Growth Des. 20(4) (2020), 2734-2741, DOI: 10.1021/acs.cgd.0c0012
https://doi.org/10.1021/acs.cgd.0c00120

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2019

Nucleation, morphology, and structure of sub-nm thin ceria islands on Rh(111)
J.I. Flege, J. Höcker, J.T. Sadowski, S.D. Senanayake, and J. Falta
Surface and Interface Analysis 51(1), (2019), 110-114

Growth and structure of singly oriented single-layer tungsten disulfide on Au(111)
L. Bignardi, D. Lizzit, H. Bana, E. Travaglia, P. Lacovig, Ch. E. Sanders, M. Dendzik, M. Michiardi, M. Bianchi, M. Ewert, L. Buß, J. Falta, J.I. Flege, A. Baraldi, R. Larciprete, P. Hofmann, and S. Lizzit
Phys. Rev. Mat. 3(1), (2019), 014003
Wafer-Scale Synthesis of Graphene on Sapphire: Toward Fab-Compatible Graphene
N. Mishra, S. Forti, F. Fabbri, L. Martini, C. McAleese, B.R. Conran, P.R. Whelan, A. Shivayogimath, B.S. Jessen, L. Buß, J. Falta, I. Aliaj, S. Roddaro, J.I. Flege, P. Bøggild, K.B.K. Teo, and C. Coletti
Small, (2019), DOI: 10.1002/smll.201904960
Dynamics of the interaction between ceria and platinum during redox processes
P. Luches, G. Gasperi, M. Sauerbrey, S. Valeri, J. Falta, and J.I. Flege
Frontiers in Chemistry 7, (2019), DOI: 10.3389/fchem.2019.00057
Growth of Epitaxial 3,4,9,10-Perylene Tetracarboxylic Dianhydride on Bi-Terminated Silicon
T. Schmidt, C. Ahrens, J.I. Flege, C. Jaye, D.A. Fischer, and J. Falta
Journal of Physical Chemistry C 123(12), (2019), DOI: 10.1021/acs.jpcc.8b10396

High surface area SiC(O)-based ceramic by pyrolysis of poly (ethylene glycol) methacrylate-modified polycarbosilane
S. Kaur, S. Fischer, J. Falta, K. Rezwan, and M. Wilhelm
Journal of the American Ceramic Society 102(12), (2019), DOI: 10.1111/jace.16647

Quasicrystals and their Approximants in 2D Ternary Oxides
S. Förster, S. Schenk, E.M. Zollner, O. Krahn, Ch.-T. Chiang, F.O. Schumann, A. Bayat, K.-M. Schindler, M. Trautmann, R. Hammer, K. Meinel, W.A. Adeagbo, W. Hergert, J.I. Flege, J. Falta, M. Ellguth, Ch. Tusche, M. DeBoissieu, M. Muntwiler, T. Greber, and W. Widdra
phys. stat. sol. (b), (2019), DOI: 10.1002/pssb.201900624

Layer-by-Layer Resistive Switching: Multistate Functionality due to Electric-Field-Induced Healing of Dead Layers
J.-O. Krisponeit, B. Damaschke, V. Moshnyaga, and K. Samwer
Phys. Rev. Lett. 122, (2019), 136801

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2018

In situ studies of oxide nucleation, growth, and transformation using slow electrons
J. I. Flege and D. C. Grinter
Prog. Surf. Sci., in press, available online (2018) https://doi.org/10.1016/j.progsurf.2018.02.001

Thermal reduction of ceria nanostructures on rhodium(111) and re-oxidation by CO2
A. Schaefer, B. Hagmann, J. Höcker, U. Hejral, J.I. Flege, and J. Gustafson
Phys. Chem. Chem. Phys. 20(29), (2018), 19447-19457

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2017

Cerium oxide epitaxial nanostructures on Pt(111): growth, morphology and structure
M. Sauerbrey, G. Gasperi, P. Luches, J. Falta, S. Valeri, and J.I. Flege
Top. Catal., 60 (2017) DOI: 10.1007/s11244-016-0716-6

Growth and decay of a two-dimensional oxide quasicrystal: High-temperature in situ microscopy
S. Förster, J.I. Flege, E.M. Zollner, F.O. Schumann, R. Hammer, A. Bayat, K.-M. Schindler, J. Falta, and W. Widdra
Ann. Phys. (Berlin), 529, (2017) DOI: 10.1002/andp. 201600250

Growth and structure of ultrathin praseodymium oxide layers on Ruthenium(0001)
J. Höcker, J.-O. Krisponeit, J. Cambeis, A. Zakharov, Y. Niu, G. Wei, L. Colombi Ciacchi, J. Falta, A. Schaefer, and J.I. Flege
Phys. Chem. Chem. Phys. 19, DOI: 10.1039/C6CP06853G

Ga and In adsorption on Si(112): adsorption sites and superstructure
M. Speckmann, Th. Schmidt, J. I. Flege, J. Höcker, I. Heidmann, and J. Falta
Phys. Rev. B 95, (2017), 125441

The cubic-to-hexagonal phase transition of cerium oxide particles: dynamics and structure
J. Höcker, J.-O. Krisponeit, Th. Schmidt, J. Falta, and J. I. Flege
Nanoscale 9, (2017), 9352

Nanoscale analysis of oxidation state and surface termination of praseodymium oxide ultrathin films on ruthenium(0001)
J. I. Flege, J.-O. Krisponeit, J. Höcker, M. Hoppe, Y. Niu, A. Zakharov, A. Schaefer, E. E. Krasovskii, and J. Falta
Ultramicroscopy 183, (2017), 61

Exploiting micro-scale structural and chemical observations in real time for understanding chemical conversion: LEEM/PEEM studies over CeOx-Cu(111)
T. Duchoň, J. Hackl, J. Höcker, K. Veltruská, V. Matolín, J. Falta, S. Cramm, S. Nemšák, C. M. Schneider, J. I. Flege, and S. D. Senanayake
Ultramicroscopy 183, (2017), 84

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2016

Mazes and meso-islands: Impact of Ag preadsorption on Ge growth on Si(111)
Th. Schmidt, M. Speckmann, J. I. Flege, K. Müller-Caspary, I. Heidmann, A. Kubelka-Lange, T. O. Menteş, M. Á. Niño, A. Locatelli, A. Rosenauer, and J. Falta
Phys. Rev. B 94, (2016), 235410 DOI: 10.1103/PhysRevB.94.235410 

Carrier collection losses in interface passivated amorphous silicon thin-film solar cells
A. Neumüller, S. Bereznev, M. Ewert, O. Volobujeva, O. Sergeev, J. Falta, M. Vehse, and C. Agert
Appl. Phys. Lett., 109 (4), (2016), 043903 DOI: 10.1063/1.4959995

Ultrasmooth Ru(0001) Films as Templates for Ceria Nanoarchitectures
M. Sauerbrey, J. Höcker, M. Wellbrock, M. Schowalter, J.-O. Krisponeit, K. Müller-Caspary, A. Rosenauer, G. Wei, L. Colombi Ciacchi, J. Falta, and J.I. Flege
Crystal Growth & Design 16 (8), (2016), 4216-4224

Growth and characterization of epitaxially stabilized ceria(001) nanostructures on Ru(0001)
J.I. Flege, J. Höcker, B. Kaemena, T.O. Mentes, A. Sala, A. Locatelli, S. Gangopadhyay, J.T. Sadowski, S.D. Senanayake, and J. Falta
Nanoscale 8, (2016), 10849-10856  DOI: 10.1039/C6NR02393B

Controlled growth of exclusively (100) oriented CeO2 nanostructures on Cu(111) surfaces
J. Höcker, T. Duchŏn, K. Veltruská, J. Falta, V. Matolin, S.D. Senanayake, and J.I. Flege
J. Phys. Chem. C 120, (2016), 4895

In situ growth, structure, and real-time chemical reactivity of well-defined CeOx-Ru(0001) model surfaces
D.C. Grinter, S.D. Senanayake, and J.I. Flege*
Appl. Catal., B 197, (2016), 286

Isotropic thin PTCDA films on GaN(0001)
Ch. Ahrens, J.I. Flege, C. Jaye, D.A. Fischer, Th. Schmidt, and J. Falta
J. Phys.: Condens. Matter 28, (2016), 475003

Morphology and chemical composition of cobalt germanide islands on Ge(001)
M. Ewert, Th. Schmidt, J.I. Flege, I. Heidmann, T. Grzela, W. Klesse, M. Foerster, L. Aballe, T. Schroeder, and J. Falta
Nanotechnology27(32), (2016), 325705  http://doi.org/10.1088/0957-4484/27/32/325705

Controlling Heteroepitaxy by Oxygen Chemical Potential: Exclusive Growth of (100) Oriented Ceria Nanostructures on Cu(111)
J. Höcker, T. Duchoň, K. Veltruská, V. Matolín, J. Falta, S.D. Senanayake, and J.I. Flege
Phys. Chem. C, in press (2016), DOI: 10.1021/acs.jpcc.5b11066 (selected for journal cover) 

Role of RuO2(100) in surface oxidation and CO oxidation catalysis on Ru(0001)
J.I. Flege, J. Lachnitt, D. Mazur, P. Sutter, and J. Falta
Phys. Chem. Chem. Phys. 18, (2016), 213 DOI: 10.1039/C5CP05807D

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2015

Unraveling the dynamic nanoscale reducibility (Ce4+ → Ce3+) of CeOx-Ru in hydrogen activation
J. Höcker, T.O. Menteş, A. Sala, A. Locatelli, Th. Schmidt, J. Falta, S.D. Senanayake, and J.I. Flege
Adv. Mater. Interfaces 2, (2015), 1500314 (featured on journal inside cover) 

Nanoscale origin of mesoscale roughening: real-time tracking and identification of three ruthenium oxide phases in ruthenium oxidation
J.I. Flege, B. Herd, J. Goritzka, H. Over, E.E. Krasovskii, and J. Falta
ACS Nano 9, (2015), 8468 

Growth, structure, and stability of the high-index TbOx(112) surface on Cu(111)
J. Höcker, W. Cartas, A. Schaefer, M. Bäumer, J. Weaver, J. Falta, and J.I. Flege
J. Phys. Chem. C 119, (2015), 14175 

Insights into the gas phase oxidation of Ru(0001) on the mesoscopic scale using molecular oxygen
J.C. Goritzka, B. Herd, P.P.T. Krause, J. Falta, J.I. Flege, and H. Over
Phys. Chem. Chem. Phys. 17, (2015), 13895 

Oxidation state analysis of ceria by XPS
A. Allahgholi, J.I. Flege, S. Thieß, W. Drube, and J. Falta
ChemPhysChem 16 (2015), 1083 

Surface resonances in electron reflection from overlayers
E.E. Krasovskii, J. Höcker, J. Falta, and J.I. Flege
J. Phys.: Condens. Matter 27, (2015), 035501 

Growth and evolution of nickel germanide nanostructures on Ge(001)
T. Grzela, G. Capellini, W. Koczorowski, M.A. Schubert, R. Czajka, N.J. Curson, I. Heidmann, Th. Schmidt, J. Falta, and T. Schröder
Nanotechnology 26, (2015), 385701 

Oxidation-State Analysis of Ceria by X-ray Photoelectron Spectroscopy
A. Allahgholi, J.I. Flege, S. Thieß, W. Drube, and J. Falta
ChemPhysChem, 16, (2015), 1083-1091

The electronic structure of homogeneous ferromagnetic (Ga, Mn)N epitaxial films
E. Piskorska-Hommel, M.J. Winiarski, G. Kunert, I.N. Demchenko, O.D. Roshchupkina, J. Grenzer, J. Falta, D. Hommel, and V. Holý
Journal of Applied Physics, 117 (6), (2015) 

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2014

Surface oxidation of GaN(0001): Nitrogen plasma-assisted cleaning for ultrahigh vacuum applications
S. Gangopadhyay, Th. Schmidt, C. Kruse, S. Figge, D. Hommel, and J. Falta
Journal of Vacuum Science & Technology A, 32 (5), (2014) 

Intensity-voltage low-energy electron microscopy for functional materials characterization
J.I. Flege and E.E. Krasovskii
Physica Status Solidi – Rapid Research Letters, 8 (6), (2014), 463-677 

Epitaxial, well-ordered ceria/lanthana high-k gate dielectrics on silicon
J.I. Flege, B. Kaemena, Th. Schmidt, and J. Falta
Journal of Vacuum Science & Technology B, 32 (3), (2014)  

Ultrathin, epitaxial cerium dioxide on silicon
J.I. Flege, B. Kaemena, J. Höcker, F. Bertram, J. Wollschläger, Th. Schmidt, and J. Falta
Applied Physics Letters, 104 (13), (2014) 

Influence of a low-temperature capping on the crystalline structure and morphology of InGaN quantum dot structures
B. Krause, B. Miljevic, T. Aschenbrenner, E. Piskorska-Hommel, C. Tessarek, M. Barchuk, G. Buth, R.D. Tchana, S. Figge, J. Gutowski, D. Hänschke, J. Kalden, T. Laurus, S. Lazarev, R. Magalhaes-Paniago, K. Sebald, A. Wolska, D. Hommel, J. Falta, V. Holy, and T. Baumbach
Journal of Alloys and Compounds, 585, (2014) 585-572 

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2013

Surface evolution of 4H-SiC(0001) during in-situ surface preparation and its influence on graphene properties
J. Hassan, A. Meyer, S. Cakmakyapan, O. Kazar, J.I. Flege, J. Falta, E. Ozbay, and E. Janzén
Materials Science Forum, 740-742, (2013) 157-160
DOI: 10.4028/www.scientific.net/MSF.717-720.605

Ytterbium Intercalation of Epitaxial Graphene Grown on Si-Face SiC
S. Watcharinyanon, L.I. Johansson, C. Xia, J.I. Flege, A. Meyer, J. Falta, and C. Virojanadara
Graphene, 2, (2013) 66-73
DOI: http/dx.doi.org/10.4236/graphene.2013.22010

Origin of chemical contrast in low-energy electron reflectivity of correlated multivalent oxides: The case of ceria
J.I. Flege, B. Kaemena, A. Meyer, J. Falta, S.D. Senanayake, J.T. Sadowski, R.D. Eithiraj, and E.E. Krasovskii
Physical Review B, 88 (23), (2013) 

Al-induced faceting of Si(113)
C. Klein, I. Heidmann, T. Nabbefeld, M. Speckmann, Th. Schmidt, Frank-J. Meyer zu Heringsdorf, J. Falta, and M. Horn-von Hoegen
Surface Science, 618, (2013) 109-114 

Spatial correlation of photo-induced and thermionic electron emission from low work function diamond films
N. Neugebohrn, T. Sun, Franz A.M. Koeck, Gary G. Hembree, Robert J. Nemanich, Th. Schmidt, and J. Falta
Diamond and Related Materials, 40, (2013) 12-16 

Forschendes Lernen im Bachelor-Walpflichtfach Festkörperphysik – Ein Pilotprojekt am Fachbereich Physik/Elektrotechnik
Th. Schmidt, K. Sebald, and J. Gutowski
in: Forschendes Lernen als Profilmerkmal einer Universität, L. Huber and M. Kröger (eds.)
Universitätsverlag Webler, Bielefeld, 2013, ISBN 978-3-937026-83-1 

Growth mode and oxidation state analysis of individual cerium oxide islands on Ru(0001)
J.I. Flege, B. Kaemena, S.D. Senanayake, J. Höcker, J.T. Sadowski, and J. Falta
Ultramicroscopy, 130, (2013) 87-93

Colloidally prepared platinum nanoparticles deposited on iron oxide studied by XAFS
E. Piskorska-Hommel, D. Arndt, T. Wilkens, J. Falta, and M. Bäumer
15th International Conference on X-ray Absorption Fine Structure (XAFS15)
Journal of Physics, Conference Series, 430, (2013)

Origin of chemical contrast in low-energy electron reflectivity of correlated multivalent oxides: The case of ceria
J.I. Flege, B. Kaemena, A. Meyer, J. Falta, S.D. Senanayake, J.T. Sadowski, R.D. Eithiraj, and E.E. Krasovskii
Physical Review B, 88, (2013) 235428-1 – 235428-7

Growth and morphology of Ceria on Ruthenium (0001)
B. Kaemena, S.D. Senanayake, A. Meyer, J.T. Sadowski, J. Falta, and J.I. Flege
Journal of Physical Chemistry C, 117 (1), (2013) 221-232

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2012

Control of epitaxial graphene thickness on 4H-SiC(0001) and buffer layer removal through hydrogen intercalation
J. Hassan, C. Virojanadara, A. Meyer, I.G. Ivanov, J.I. Flege, S. Watcharinyanon, J. Falta, L.I. Johansson, and E. Janzén
Materials Science Forum, 717-720, (2012) 605-608
DOI: 10.4028/www.scientific.net/MSF.717-720.605

Nanopattering in CoOx/Cu(111): A new type of surface reconstruction and enhancement of catalytic activity
S.D. Senanayake, J.T. Sadowski, and J. Evans
Journal of Physical Chemistry Letters, 3 (7), (2012) 829-843

Complementary information in CdSe/ZnSe quantum dot local structure from extended X-ray absorption fine structure and diffraction anomalous fine structure measurements.
Piskorska-Hommel, V. Holý, O. Caha, A. Wolska, A. Gust, C. Kruse, H. Kröncke, J. Falta, and D. Hommel
Journal of Alloys and Copounds, 523, (2012) 155-160

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2011

Silicate-free growth of high-quality ultrathin cerium oxxide films on Si(111)
J.I. Flege, B. Kaemena, S. Gevers, F. Bertram, T. Wilkens, D. Bruns, J. Bätjer, Th. Schmidt, J. Wollschläger, and J. Falta
Phys. Rev. B, 84 (2011) 235418

Self-limited oxide formation in Ni(111) oxidation
J.I. Flege, A. Meyer, J. Falta, and E. E. Krasovskii
Phys. Rev. B, 84 (2011) 115441

In adsorption on Si(112) and its impact on Ge growth
M. Speckmann, Th. Schmidt, J.I. Flege, and J. Falta
IMB J. Res. Dev., 55 (2011) 11

Cleaning and growth morphology of GaN and InGaN surfaces
J. Falta, Th. Schmidt, S. Gangopadhyay, Ch. Schulz, S. Kuhr, N. Berner, J.I. Flege, A. Pretorius, A. Rosenauer, K. Sebald, H. Lohmeyer, J. Gutowski, S. Figge, T. Yamaguchi, and D. Hommel
Phys. Stat. Sol. B, 248 (2011) 1800-1809

Complex surface phases of Sb on Si(113): Combining x-ray standing waves and density functional theory
M. Siebert, Th. Schmidt, J.I. Flege, and J. Falta
in: The x-ray standing wave technique: principles and applications, Series on Synchrotron Radiation Techniques and Applications, Vol. 7, J. Zegenhagen and A. Kazimirov (eds.)
World Scientific (Singapore)

Photon stimulated desorption
J.I. Flege, Th. Schmidt, A. Hille, J. Falta, and G. Materlik
in: The x-ray standing wave technique: principles and applications, Series on Synchrotron Radiation Techniques and Applications, Vol. 7, J. Zegenhagen and A. Kazimirov (eds.)
World Scientific (Singapore)

In-situ oxidation of ultrathin silver films on Ni(111)
A. Meyer, J. I. Flege, S. D. Senanayake, B. Kaemena, R. E. Rettew, F. M. Alamgir, and J. Falta
IBM J. Res. Dev., 55 (2011) 8

Mg and Si dopant incorporation and segregation in GaN
Th. Schmidt, M. Siebert, J.I. Flege, S. Figge, S. Gangopadhyay, A. Pretorius, T.-L. Lee, J. Zegenhagen, L. Gregoratti, A. Barinov, A. Rosenauer, D. Hommel, and J. Falta
Phys. Stat. Sol. B, 248 (2011) 1810-1821

Ultra-thin high-quality silicon nitride films on Si(111)
J. Falta, Th. Schmidt, S. Gangopadhyay, T. Clausen, O. Brunke, J.I. Flege, S. Heun, S. Bernstorff, L. Gregoratti, and M. Kiskinova
Europhys. Lett., 94 (2011) 16003

Lost in reciprocal space? Determination of the scattering condition in spot profile analysis low-energy electron diffraction
C. Klein, T. Nabbefeld, H. Hattab, D. Meyer, G. Jnawali, M. Kammler, F.J. Meyer zu Heringdorf, A. Golla-Franz, B.H. Müller, Th. Schmidt, M. Henzler, and M. Horn-von Hoegen
Rev. Sci. Instr., 82 (2011) 035111

Cleaning of GaN(-2110) surfaces
Ch. Schulz, S. Kuhr, H. Geffers, Th. Schmidt, J.I. Flege, T. Aschenbrenner, D. Hommel, and J. Falta
J. Vac. Sci. Technol. A, 29 (2011) 011013

Interactions of oxygen and ethylene with submonolayer Ag films supported on Ni(111)
R.E. Rettew, A. Meyer, S.D. Senanayake, T.-L. Chen, C. Petersburg, J.I. Flege, J. Falta, and F.M. Alamgir
Phys. Chem. Chem. Phys., 13 (2011) 11034-11044

Role of Palladium in Iron Based Fischer-Tropsch Catalysts Prepared by Flame Spray Pyrolysis
M. Minnermann, S. Pokhrel, K. Thiel, R. Henkel, J. Birkenstock, T. Laurus, A. Zargham, J.I. Flege, V. Zielasek, E. Piskorska-Hommel, J. Falta, L. Mädler, and M. Bäumer
J. Phys. Chem. C, 115 (2011) 1302-1310

Photoemission study of praseodymia in its highest oxidation state: The necessity of in situ plasma treatment
A. Schaefer, S. Gevers, V. Zielasek, T. Schroeder, J. Falta, J. Wollschläger, and M. Bäumer
The Journal of Chemical Physics, 134 (2011) 054701-1-054701-7

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2010

Improved epitaxy of ultrathin praseodymia films on chlorine passivated Si(111) reducing silicate interface formation
S. Gevers, J.I. Flege, B. Kaemena, D. Bruns, T. Weisemöller, J. Falta, and J. Wollschläger
Appl. Phys. Lett., 97 (2010) 242901

J. Falta and Th. Schmidt in ”Handbook of Nanophysics Functional Nanomaterials” K. D. Sattler, Edt.CRC Press, Boca Raton, Florida, USA (2010) ISBN 978-1-4200-7552-6

 

Forschung mit Synchrotronstrahlung
J. Falta and Th. Möller, Edts.
Vieweg + Teubner Verlag Wiesbaden (2010) ISBN 978-3-519-00357-1

Ge Growth on Partially and Entirely Ag Covered Si(111)
Th. Schmidt, M. Speckmann, J. Falta, T.O. Mentes, M. A. Nino, and A. Locatelli
e-J. Surf. Sci. Nanotech., Vol. 8 (2010) 221-226

On revealing the vertical structure of nanoparticle films with elemental resolution: A total external reflection X-ray standing waves study
A. Zargham, Th. Schmidt, J.I. Flege, M. Sauerbrey, R. Hildebrand, S. Röhe, M. Bäumer, and J. Falta
Nucl. Instr. Meth. Phys. Res. B, 268 (2010) 325-328

Ultrathin silver films on Ni(111)
A. Meyer, J.I. Flege, R.E. Rettew, S.D. Senanayake, Th. Schmidt, F.M. Alamgir, and J. Falta
Phys. Rev. B, 82 (2010) 085424

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2009

Silver: a novel growth catalyst for Ge nanoislands on Si(113)
M. Speckmann, Th. Schmidt, A. Locatelli, T.O. Mentes, M.A. Niño, and J. Falta
Phys. Status Solidi RRL, (2009) 305

Local structure of uncapped and capped InGaN/GaN quantum dots
E. Piskorska-Hommel, Th. Schmidt, M. Siebert, T. Yamaguchi, D. Hommel, J. Falta, and J.O. Cross
J. Synchrotron Rad., 16 (2009) 494

Growth of praseodymium oxide on Si(111) under oxygen-deficient conditions
A. Schaefer, V. Zielasek, Th. Schmidt, A. Sandell, M. Schowalter, O. Seifarth, L.E. Walle, Ch. Schulz, J. Wollschläger, T. Schroeder, A. Rosenauer, J. Falta, and M. Bäumer
Phys. Rev. B, 80 (2009) 045414

Nanoscale analysis of Ru(0001) oxidation using low-energy and photoemission electron microscopy
J.I. Flege and P. Sutter
J. Phys.: Condens. Matter, 21 (2009) 314018

Temperature dependent low energy electron microscopy study of Ge island growth on bare and Ga terminated Si(112)
M. Speckmann, Th. Schmidt, J.I. Flege, J.T. Sadowski, P. Sutter, and J. Falta
J. Phys.: Condens. Matter, 21 (2009), 314020

Atomic structure of the non-polar GaN(2110) surface by cross-sectional scanning tunneling microscopy
D. Krüger, S. Kuhr, Th. Schmidt, D. Hommel, and J. Falta
phys. stat. sol. RRL 3, 4 (2009) 91

Low-temperature growth of InGaN/GaN nano-islands investigated by grazing-incidence X-ray diffraction
Th. Schmidt, J.I. Flege, M. Siebert, S. Figge, T. Yamaguchi, D. Hommel, and J. Falta
phys. stat. sol. (c), 6 (2009) S602

From nanoislands to nanowires: Growth of germanium on gallium-terminated silicon surfaces
Th. Schmidt, J.I. Flege, M. Speckmann, T. Clausen, S. Gangopadhyay, A. Locatelli, T.O. Mentes, S. Heun, F.Z. Guo, P. Sutter, 
and J. Falta
phys. stat. sol. (a), 206 (2009) 1718

Oxide removal from GaN(0001)
Ch. Schulz, Th. Schmidt, J.I. Flege, N. Berner, Ch. Tessarek, D. Hommel, and J. Falta
phys. stat. sol. (c), 6 (2009) S305

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2008

Epitaxial graphene on ruthenium
P. Sutter, J. I. Flege, and E. Sutter
Nature Mater., 7 (2008) 406

In situ structural imaging of CO oxidation catalysis on oxidized Rh(111)
J. I. Flege and P. Sutter
Phys. Rev. B, 78 (2008) 153402

Atomic structure of chlorinated Si(113) surfaces
J.I. Flege, Th. Schmidt, M. Siebert, G. Materlik, and J. Falta
Phys. Rev. B, 78 (2008) 085317

Structural imaging of surface oxidation and oxidation catalysis on Ru(0001)
J. I. Flege, J. Hrbek, and P. Sutter
Phys. Rev. B, 78 (2008) 165407

Plasma modification of CoPt3 nanoparticle arrays - a route to catalytic coatings of surfaces
B. Gehl, J.I. Flege, V. Aleksandrovic, Th. Schmidt, A. Kornowski, S. Bernstorff, J. Falta, H. Weller, and M. Bäumer
J. Vac. Sci. Technol. A 26(4) (2008) 908

Structural and chemical effects of plasma treatment on close-packed colloidal nanoparticle layers
B. Gehl, A. Frömsdorf, V. Aleksandrovic, Th. Schmidt, A. Pretorius, J.I. Flege, S. Bernstorff, A. Rosenauer, J. Falta, H. Weller, and M. Bäumer
Adv. Funct. Mater.,18 (2008) 2398-2410

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2007

InGaN selfassembled quantum dots investigated by X-ray diffraction-anomalous-fine structure technique
E. Piskorska, V. Holý, M. Siebert, H. Renevier, Th. Schmidt, J. Falta, T. Yamaguchi, and D. Hommel
AIP Conf. Proc., 893(1) (2007) 79

Adsorbate induced self-ordering of germanium nanoislands on Si(113)
Th. Schmidt, T. Clausen, J.I. Flege, S. Gangopadhyay, A. Locatelli, T.-O. Mentes, F.Z. Guo, S. Heun, and J. Falta
New J. Phys., 9 (2007) 392

Formation and morphology of InGaN nano-islands on GaN(0001)
S. Gangopadhyay, Th. Schmidt, S. Einfeldt, T. Yamaguchi, D. Hommel, and J. Falta
J. Vac. Sci. Techn. B, 25 (2007) 791-795

Alignment of Ge nanoislands on Si(111) by Ga-induced substrate self-patterning 
Th. Schmidt, J.I. Flege, S. Gangopadhyay, T. Clausen, A. Locatelli, S. Heun, and J. Falta 
Phys. Rev. Lett. 98 (2007) 066104-1; Virt.-J. Nanoscale Sci. Techn. 15 (2007)

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2006

Diffraction anomalous fine structure investigation of InGaN quantum dots
E. Piskorska, V. Holý, M. Siebert, B. Krause, T.H. Metzger, Th. Schmidt, J. Falta, T. Yamaguchi, and D. Hommel
phys. stat. sol (c), 3 (2006) 1662-1666

Growth and formation of InGaN and GaN nanostructures studied by STM
S. Gangopadhyay, Th. Schmidt, S. Einfeldt, T. Yamaguchi, D. Hommel, and J. Falta
e-J. Surf. Sci. Nanotech., 4 (2006) 90-95

A novel approach for the growth of InGaN quantum dots
T. Yamaguchi, K. Sebald, H. Lohmeyer, S. Gangopadhyay, J. Falta, J. Gutowski, S. Figge, and D. Hommel
phys. stat. sol. (c), 3(11) (2006) 3955-3958

X-ray standing wave investigations of Si dopant incorporation in GaN
M. Siebert, Th. Schmidt, J.I. Flege, J. Zegenhagen, T.-L. Lee, S. Figge, D. Hommel, and J. Falta
Mater. Res. Soc. Symp. Proc. Vol., 892 (2006) FF03-03.1

Surface Morphology and Island Shape of MOVPE Grown InGaN Nano-Island Ensembles Studied by STM
S. Gangopadhyay, Th. Schmidt, S. Einfeldt, T. Yamaguchi, D. Hommel, and J. Falta
Mater. Res. Soc. Symp. Proc. Vol., 892 (2006) FF32-05.1

Two to three dimensional transition of InGaN layer and influences of GaN overgrowth
T. Yamaguchi, S. Einfeldt, S. Gangopadhyay, J. Falta, and D. Hommel
phys. stat. sol. (c), 3 (2006) 1396-1399

Structural investigations of GaN films with x-ray standing waves
M. Siebert, Th. Schmidt, J.I. Flege, S. Einfeldt, S. Figge, D. Hommel, and J. Falta
phys. stat. sol. (c), 3(6) (2006) 1729

Growth and morphology of MOVPE grown InGaN/GaN islands
S. Gangopadhyay, Th. Schmidt, S. Einfeldt, T. Yamaguchi, D. Hommel, and J. Falta
phys. stat. sol. (c), 3(6) (2006) 1557

N-plasma assisted MBE grown GaN on Si(111)
S. Gangopadhyay, Th. Schmidt, and J. Falta
phys. stat. sol. (c), 243(7) (2006) 1416

Surface segregation of Si and Mg dopants in MOVPE grown GaN films revealed by x-ray photoemission spectro-microscopy
Th. Schmidt, M. Siebert, J.I. Flege, S. Gangopadhyay, A. Pretorius, S. Figge, L. Gregoratti, A. Barinov, D. Hommel, and J. Falta
phys. stat. sol. (c), 3(6) (2006) 1725

Sb surfactant-mediated epitaxy of Ge on Si(113) studied by AFM, SEM and GIXRD
T. Clausen, J.I. Flege, Th. Schmidt, and J. Falta
Mater. Res. Soc. Symp. Proc. Vol. 901E (2006) Ra12-06.1

Temperature dependent low energy electron microscopy study of Ge growth on Si(113)
T. Clausen, Th. Schmidt, J.I. Flege, A. Locatelli, S. Heun, T.O. Mentes, F. Guo, and J. Falta
Appl. Surf. Sci. 252 (2006) 5321-5325

Spectro-microscopy of Si doped GaN films
Th. Schmidt, M. Siebert, A. Pretorius, S. Gangopadhyay, S. Figge, J.I. Flege, L. Gregoratti, A. Barinov, D. Hommel, and J. Falta
Nucl. Instr. Meth. B, 246 (2006) 79

Less strain energy despite fewer misfit dislocations: The impact of ordering
Th. Schmidt, R. Kröger, J.I. Flege, T. Clausen, J. Falta, A. Janzen, P. Zahl, P. Kury, M. Kammler, and M. Horn-von Hoegen
Phys. Rev. Lett. 96 (2006) 066101

Grazing-incidence small-angle x-ray scattering investigation of spin-coated CoPt3 nanoparticle films
J.I. Flege, Th. Schmidt, V. Aleksandrovic, G. Alexe, T. Clausen, B. Gehl, A. Kornowski, S. Bernstorff, H. Weller, and J. Falta 
Nucl. Instr. Meth. B 246 (2006) 25

Initial stage of silicon nitride nucleation on Si(111) by rf plasma-assisted growth
S. Gangopadhyay, Th. Schmidt, and J. Falta
e-J. Surf. Sci. Nanotech., 4 (2006) 84

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2005

Real-time low-energy electron microscopy study of Ga adsorption and facet array formation on Si(113)
T. Clausen, Th. Schmidt, J.I. Flege, J. Falta, A. Locatelli, T.O. Mentes, S.Heun, and F.Guo 
e-J. Surf. Sci. Nanotech., 3 (2005) 379-383

Self-organized 2D nanopatterns after low-coverage Ga adsorption on Si(111)
Th. Schmidt, J.I. Flege, S. Gangopadhyay, T. Clausen, A. Locatelli, S. Heun, and J. Falta
New J. Phys., 7 (2005) 193

Ordering mechanism of stacked CdSe/ZnSSe quantum dots: A combined reciprocal-space and real-space approach
Th. Schmidt, E. Roventa, G. Alexe, T. Clausen, J.I. Flege, S. Bernstorff, A. Rosenauer, D. Hommel, and J. Falta 
Phys. Rev. B, 72 (2005)

Desorption site-specificity and halogen minority sites on Si(111) 
J.I. Flege, Th. Schmidt, J. Bätjer, M. Cakmak, G. Materlik and J. Falta 
New J. Phys., 7 (2005) 208

Sb-induced reconstructions on Si(113): Adatoms as the key elements 
M. Siebert, Th. Schmidt, J.I. Flege, and J. Falta 
Phys. Rev. B, 72 (2005) 045323

Surfactant mediated epitaxy of Ge on Si(111): beyond the surface
Th. Schmidt, R. Kröger, T. Clausen, J. Falta, A. Janzen, M. Kammler. P. Kury, P. Zahl, and M. Horn-von Hoegen 
Appl. Phys. Lett. 86 (2005) 111910 
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CoPt3 nanoparticles adsorbed on SiO2: a GISAXS and SEM study
J.I. Flege, Th. Schmidt, G. Alexe, T. Clausen, S. Bernstorff, I. Randjelovic, V. Aleksandrovic, A.Kornowski, H. Weller and J. Falta 
Mater. Res. Soc. Symp. Proc. Vol. 840 (2005) 
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XSW measurements of Sb on the Si(113) surface 
M. Siebert, J.I. Flege, Th. Schmidt and J. Falta 
Physica B 357 (2005) 115-117 
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2004

Small angle x-ray scattering reveals CdSe/ZnSSe quantum dot ordering 
Th. Schmidt, G. Alexe, D. Hommel, T. Clausen, J. Falta, and S. Bernstorff 
Elettra Highlights 2004

Interfacial interactions at Au/Si3N4/Si(111) and Ni/Si3N4/Si(111) structures with ultra-thin nitride films
L. Aballe, L.Gregoratti, A. Barinov, and M. Kiskinova T. Clausen, S. Gangopadhyay, J. Falta 
Appl. Phys. Lett. 84 (2004) 5031

Dry etching characteristics and surface reconstruction of Cl/Si(113)
J.I. Flege, Th. Schmidt, G. Materlik, and J. Falta 
Surf. Sci. 566-568 (2004) 94-99 
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Direct investigation of very thin CdSe layers on ZnSe by out-of-plane grazing incidence x-ray diffraction 
G. Alexe, T. Passow, Th. Schmidt, T. Clausen, J. Falta, H. Heinke and D. Hommel 
Phys. Stat. Sol. (c), 1 (2004) 702-705 
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Investigation of CdSe/ZnSSe quantum dot ordering by grazing incidence small angle x-ray scattering 
Th. Schmidt, T. Clausen, J. Falta, S. Bernstorff, G. Alexe, T. Passow and D. Hommel 
Phys. Stat. Sol. (b), 241 (2004) 523-526

Correlated stacks of CdSe/ZnSe quantum dots 
Th. Schmidt, T. Clausen, J. Falta, G. Alexe, T. Passow, D. Hommel, and S. Bernstorff 
Appl. Phys. Lett. 84 (2004) 4367-4369 
Virt. J. Nanoscale Sci. Techn. 9 (2004) 
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Photon-stimulated Desorption and X-ray Standing Waves 
J.I. Flege, Th. Schmidt, A. Hille, J. Falta, and G. Materlik 
Synchrotron Radiation News, 17 (3) (2004) 43-47 
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Influence of substrate domain boundaries on surface reconstructions of Ga/Si(111) 
S. Gangopadhyay, Th. Schmidt, and J. Falta 
Surf. Sci., 552 (2004) 63-69
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2003

Spectro-microscopy of ultra-thin SiN films on Si(111)
Th. Schmidt, T. Clausen, S. Gangopadhyay, J. Falta, S. Heun, L. Gregoratti, A. Barinov, B. Kaulich, M. Kiskinova 
Nuclear Instruments and Methods in Physics Research B, 200 (2003) 79 - 84

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2002

Subsurface interstitials as promoters of 3D growth of Ti on Si(111): An XSW, XPS and AFM investigation 
G. Kuri, Th. Schmidt, V. Hagen, G. Materlik, R. Wiesendanger, and J. Falta 
J. Vac. Sci. Technol. A 20(6) (2002) 1997-2003

Determination of the K adsorption site on Fe(110) with XSW 
B. Moest, Th. Schmidt, W.C.A.N. Ceelen, A.W. Denier van der Gon, J. Falta, and H.H. Brongersma 
Surf. Sci., 520 (2002) 137-150

Low temperature interface structure of CaF2/Si(111) studied by combining x-ray standing waves with component-resolved photoemission 
A. Klust, M. Bierkandt, J. Wollschläger, B.H. Müller, Th. Schmidt, and J. Falta 
Phys. Rev. B, 65 (2002) 193404-1 - 193404-4

Origin of x-ray photon stimulated desorption of Cl+ and Cl2+ ions from Cl/Si(111)-(1x1) 
J.I. Flege, Th. Schmidt, J. Falta, and G. Materlik 
Surf. Sci., 507-510 (2002) 381-388 
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Influence of capping conditions on structural properties of CdSe/ZnSe quantum dot structures 
T. Passow, K. Leonardi, H. Heinke, Th. Schmidt, J. Falta, A. Stockmann, H. Selke, and D. Hommel 
Physica E, 13 (2002) 1208

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2001

Characterization of Ge d-doped Si(111) with RBS-channeling 
J. Yuhara, K. Morita, J. Falta, B.H. Müller, and M. Horn-von Hoegen 
Surf. Interface Anal., 31 (2001) 754-760

Segregation enhanced etching of Cd during Zn deposition on CdSe quantum dots 
T. Passow, H. Heinke, Th. Schmidt, J. Falta, A. Stockmann, H. Selke, P.L. Ryder, K. Leonardi and D. Hommel 
Phys. Rev. B, 64 (2001) 193311-1 - 193311-4
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Grazing incidence structural characterization of InAs quantum dots on GaAs(001) 
K. Zhang, Ch. Heyn, W. Hansen, Th. Schmidt and J. Falta 
Appl. Surf. Sci., 175-176 (2001) 606-612

Erratum to: X-ray photon stimulated ion desorption revealed by standing waves 
J. Falta, A. Hille, T. Schmidt and G. Materlik 
Surf. Sci., 472 (2001) 154

Structural characterization of self-assembled InAs quantum dots grown by MBE 
K. Zhang, Ch. Heyn, W. Hansen, Th. Schmidt and J. Falta 
Journal of Crystal Growth, 227-228 (2001) 1020-1024

Lateral distribution of buried self-assembled InAs quantum dots in GaAs 
K. Zhang, J. Falta, Ch. Heyn, Th. Schmidt and W. Hansen 
Proc. 25th Int. Conf. Phys. Semicond., Osaka 2000 (Eds. N. Miura and T. Ando), Springer Verlag (2001) 371

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> 2000

Nondestructive detection of stacking faults for optimization of CdSe/ZnSe quantum-dot structures 
T. Passow, H. Heinke, J. Falta, K. Leonardi and D. Hommel 
Appl. Phys. Lett., 77(22) (2000) 3544

Distribution and shape of self-assembled InAs quantum dots grown on GaAs(001) 
K. Zhang, J. Falta, Th. Schmidt, Ch. Heyn, G. Materlik and W. Hansen 
Pure Appl. Chem., 72 (2000) 199

Strain Status of Self-assembled InAs Quantum Dots 
K. Zhang, Ch. Heyn, W. Hansen, Th. Schmidt and J. Falta 
Appl. Phys. Lett., 77(9) (2000) 1295

Ordering and Shape of Self-assembled InAs Quantum Dots on GaAs (001)
K. Zhang, Ch. Heyn, W. Hansen, Th. Schmidt and J. Falta 
Appl. Phys. Lett., 76(16) (2000) 2229

Effects of electron irradiation on the structure and morphology of CaF2/Si(111) 
J. Wollschläger, T. Hildebrandt, R. Kayser, J. Viernow, A. Klust, J. Bätjer, A. Hille, Th. Schmidt and J. Falta 
Appl. Surf. Sci., 162-163 (2000) 309

Islands as catalyst for film relaxation in Bi mediated Ge epitaxy on Si(111) 
J. Falta, Th. Schmidt, G. Materlik, J. Zeysing, G. Falkenberg and R.L. Johnson, 
Appl. Surf. Sci., 162-163 (2000) 256

Initial stage of the Bi surfactant mediated growth of Ge on Si(111): A structural study 
Th. Schmidt, J. Falta, G. Materlik, J. Zeysing, G. Falkenberg and R.L. Johnson, 
Appl. Surf. Sci., 166 (2000) 399
X-ray interface characterization of buried InAs layers on GaAs(001) K. Zhang, A. Foede, Th. Schmidt, P. Sonntag, Ch. Heyn, G. Materlik, W. Hansen and J. Falta, Physica Status Solidi (b) 215 (1999) 791

Bi: Perfect surfactant for Ge growth on Si(111)? 
Th. Schmidt, J. Falta, G. Materlik, J. Zeysing, G. Falkenberg and R.L. Johnson, 
Appl. Phys. Lett. 74(10) (1999) 1391 
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X-ray photon stimulated desorption revealed by standing waves 
J. Falta, A. Hille, Th. Schmidt and G. Materlik, 
Surf. Sci. Lett. 436 (1999) L677

Giant magnetoresistance in Fe/Cr superlattices without bulk scattering 
R. Schad, D. Bahr, J. Falta, J. Dekoster, G. Langouche, P. Belien, G. Verbank, K. Temst, V.V. Moshchalokov and Y. Bruynseraede, 
Euro Phys. Lett. 44 (1998) 379

Strain as driving force for interface roughening of d doping layers 
J. Falta 
Appl. Surf. Sci. 130-132 (1998) 151

Structural analysis of Fe/Cr superlattices and their components 
R. Schad, D. Bahr, J. Falta, P. Belien and Y. Bruynseraede, 
J. Phys.: Condens. Matter 10 (1998) 61

High concentration Bi d doping layers on Si(001) 
J. Falta, O. Mielmann, T. Schmidt, A. Hille, C. Sánchez-Hanke, P. Sonntag, G. Materlik, F. Meyer zu Heringdorf, M. Kammler, M. Horn-von Hoegen and M. Copel, 
Appl. Surf. Sci. 123/124 (1998) 538

X-ray characterization of buried d layers 
J. Falta, D. Bahr, G. Materlik, B.H. Müller and M. Horn-von Hoegen, 
Surf. Rev. Lett. 5 (1998) 145

Strain induced interface roughness of Si1-xCx d layers 
J. Falta, D. Bahr, A. Hille, H.J. Osten and G. Materlik, 
Appl. Phys. Lett. 71 (1997) 3525

K adsorption of Fe(100) studied by x-ray standing waves 
W. Ceelen, A.W. Dernier van der Gon, J. Falta, A. Hille and G. Materlik, 
Surf. Sci. 391 (1997) 59

Ge d layers in Si(100) characterized by x-ray reflectivity, grazing incidence diffraction and standing wave measurements 
U. Beck, P. Yang, T.H. Metzger, J. Peisl, J. Falta, G. Materlik, T. Rupp, H. Baumgärtner, I. Eisele and J.R. Patel, 
Il Nuovo Cimento 19 D (1997) 403

Stress reduction and interface quality of Sb d layers on Si(001) 
J. Falta, D. Bahr, A. Hille, G. Materlik, M. Kammler and M. Horn-von Hoegen, 
Appl. Phys. Lett. 69 (1996) 2906

Surfactant adsorption site and growth mechanism of Ge on Ga terminated Si(111) 
J. Falta, Th. Schmidt, A. Hille and G. Materlik, 
Phys. Rev. B 54 (1996) R17288

Towards perfect Ge d layers on Si(001) 
J. Falta, D. Bahr, G. Materlik, B.H. Müller and M. Horn-von Hoegen, 
Appl. Phys. Lett. 68 (1996) 1394

X-ray interface characterization of Ge d layers on Si(001) 
D. Bahr, J. Falta, G. Materlik, B.H. Müller and M. Horn-von Hoegen, 
Physica B 221 (1996) 96

Domain wall structure of Si(111)(v3xv3)R30°-Au 
J. Falta, A. Hille, D. Novikov, G. Materlik, L. Seehofer, G. Falkenberg and R.L. Johnson, 
Surf. Sci. 330 (1995) L673

Ge d-layers on Si(111) and Si(001) by MBE and SPE 
J. Falta, T. Gog, G. Materlik, B.H. Müller and M. Horn-von Hoegen, 
Mat. Res. Symp. Proc. 375 (1995) 177

Lattice position of Fe in Fe-doped LiNbO3 
T. Gog, P. Schotters, J. Falta, G. Materlik and M. Grodzicki, 
Journal of Physics: Condens. Matter 7 (1995) 6971

Interface roughening of Ge d layers on Si(111) 
J. Falta, T. Gog, G. Materlik, B.H. Müller and M. Horn-von Hoegen, 
Phys. Rev. B 51 (1995) 7598

Surfactants in Si(111) homoepitaxy 
M. Horn-von Hoegen, J. Falta, M. Copel and R.M. Tromp, 
Appl. Phys. Lett. 66 (1995) 487

Kossel diffraction in nearly perfect crystals: X-ray standing waves in reverse 
T. Gog, D. Novikov, J. Falta, A. Hille and G. Materlik, 
Journal de Physique IV, suppl. au Journal de Physique III Vol. 4 (1994) C9-449

Growth modes of Ge on GaAs(001) 
J. Falta, M.C. Reuter and R.M. Tromp, 
Appl. Phys. Lett. 65 (1994) 1680

LEEM and MEIS studies of Ge growth on GaAs(001) 
J. Falta, M. Copel, M.C. Reuter, F.K. LeGoues and R.M. Tromp, 
The Formation of Semiconductor Interfaces: Proceedings of the 4th International Conference (1994) 514

Ga-As intermixing in GaAs(001) reconstructions 
J. Falta, R.M. Tromp, M. Copel, G.D. Pettit and P.D. Kirchner, 
Phys. Rev. B 48 (1993) 5282

Frustrated dimers at the CoSi2Si(001) interface 
M. Copel and J. Falta, 
Phys. Rev. B 48 (1993) 2783

Surfactant coverage and epitaxy of Ge on Ga terminated Si(111)
J. Falta, M. Copel, F.K. LeGoues and R.M. Tromp, 
Appl. Phys. Lett. 62 (1993) 2962

Reply to: Comment on Structure and composition of GaAs(001) Surfaces 
J. Falta, R.M. Tromp, M. Copel, G.D. Pettit and P.D. Kirchner, 
Phys. Rev. Lett. 70 (1993) 3173

MEIS investigations of Si and Ge epitaxy on GaAs(001)-c(2x8) 
J. Falta, M. Copel, F.K. LeGoues and R.M. Tromp, 
Phys. Rev. B 47 (1993) 9610

Structure and composition of GaAs(001) Surfaces 
J. Falta, R.M. Tromp, M. Copel, G.D. Pettit and P.D. Kirchner, 
Phys. Rev. Lett. 69 (1992) 3068

Effect of an interfacial Ti layer on the formation of CoSi2 on Si 
K. Barmak, L.A. Clevenger, P.D. Agnello, M. Copel, J. Falta, F.M. d'Heurle, P. Dehaven and C. Cabral, 
Materials Research Society Symposium Proceedings, P238, 575 (1992)

Ring clusters in transition metal surface structures 
P.A. Bennett, M. Copel, D. Cahill, J. Falta and R.M. Tromp, 
Phys. Rev. Lett. 69 (1992) 1224

Studies of crystalline defects during the early stages of growth of Si on Si(100) at low temperatures by spot profile analysis of LEED (SPA-LEED) 
J. Falta and M. Henzler, 
Surf. Sci. 269/270 (1992) 14

Low-energy electron-diffraction profile analysis of reaction-induced substrate changes on Pt(110) during catalytic CO oxidation 
J. Falta, R. Imbihl, M. Sander and M. Henzler, 
Phys. Rev. B 45 (1992) 6858

Formation of Turing structures in catalytic surface reactions: the facetting of Pt(110) in CO+O2
R. Imbihl, J. Falta, D. Kaletta and M. Henzler, 
J. Vac. Sci. Technol. A 9 (1991) 1749

The initial stages of epitaxial growth of silicon on Si(100) 2x1 
S. Heun, J. Falta and M. Henzler, 
Surf. Sci. 243 (1991) 132

Spatial pattern formation in a catalytic surface reaction: the facetting of Pt(110) in CO+O2 
J. Falta, R. Imbihl and M. Henzler, 
Phys. Rev. Lett. 64 (1990) 1409

Electron diffraction at stepped homogeneous and inhomogeneous surfaces 
J. Wollschläger, J. Falta and M. Henzler, 
Appl. Phys. A 50 (1990) 57

The initial stages of growth of silicon on Si(111) by spot profile analysis of low energy electron diffraction 
M. Horn-von Hoegen, J. Falta and M. Henzler, 
Thin Solid Films 183 (1989) 213

SPA LEED Studies of defects in thin epitaxial NiSi2 layers on Si(111) 
J. Falta, M. Horn and M. Henzler, 
Appl. Surf. Sci. 41/42 (1989) 230

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