Publications research group Eickhoff
in Si at the 3C-SiC/Si interface during 3C-SiC deposition by LPCVD V. Papaioannou, H. Möller, M. Rapp, L. Vogelmeier, M. Eickhoff, G. Krötz, J. Stoemenos Materials Science and Engineering: B 61 , 539 (1999) [...] -type 3C-SiC M. Eickhoff, M. Möller, G. Kroetz, M. Stutzmann Journal of Applied Physics 96 , 2872 (2004) DOI : 10.1063/1.1775052 Influence of crystal defects on the piezoresistive properties of 3C–SiC M. [...] & Technology 57 , 12376 (2023) DOI: 10.1021/acs.est.3c00493 Nucleation window of Ga 2 O 3 and In 2 O 3 for Molecular Beam Epitaxy on (0001) Al 2 O 3 Alexander Karg, Justin Andreas Bich, Adrian Messow,