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ThermalFit

displayed in the appropriate fields. For the SHO fit this will be AMp (DC), Q, Omega, White Noise and the force constant. For the Lorentzian it will C1, C2, Omega, White Noise and the force constant. If [...] The results of the SHO can be seen in the third column of numbers (Amp (DC), Q, Omega0, White Noise and Force Constant), whereas the reulst of the Lorentzian will be seen in the right most column (C1, C2 [...] new version has a streamlined graphics. In addition an equivalent AmpDC and Q is calculated for the Lorentzian fit. Source Code released The source code of this version is made available to the public.

Section: FB1

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Team

Team Directors & Administration Name, Forename E-Mail Room NW1 Tel. +49 421 218- Lüssem, Björn, Prof. Dr.-Ing. Director Kontakt O2120 62610 Vellekoop, Michael J., Prof. Dr.-Ing. Director Kontakt O2140 62604 Lang, Walter, Prof. Dr.-Ing. emeritus Kontakt Cau, Johann Alain Pierre Office Kontakt O2110 62601 Burdorf, Kai Microsystems Center Bremen (MCB) Kontakt O1050 62640 Hütten, Robert IT-Administration Kontakt N3290 62580 Mehrtens, Meike Finances Kontakt O2100 62598 Technical Staff Name, Forename E-Mail Room NW1 Tel. +49 421 218- Baser, Ismail, Dipl.-Ing. (FH) Kontakt O1110 62589 Golla, Shreeteja Kontakt O2150 62639 Immoor, Lukas Kontakt O1070 62614 Kirsch, Melanie Kontakt O1070 62647 Meyer, Eva-Maria, Dipl.-Ing. (FH) Kontakt O1120 62617 Michels, Ingrid Kontakt O1050 62578 Nöbel, Henrik Kontakt O2150 62605 Schander, Andreas, Dr.-Ing. Kontakt O2100 62590 Scientific Staff Name, Forename E-Mail Room NW1 Tel. +49 421 218- Bornemann, Sarah, Dr.-Ing. Kontakt N2140 62645 Driesche van den, Sander, Dr. ir. Kontakt O2080 62652 Frulani de Paula Barbosa, Henrique, Dr. Kontakt O2050 62618 Jedermann, Reiner, Dr.-Ing. Kontakt O2130 62603 Kumar, Ankush Kontakt O2060 62638 Kumar, Ramesh, Dr. Kontakt Kunze, Fynn Lukas, Dr. rer. nat. Kontakt O1120 62591 Lawaniya, Shiv Dutta, Dr. Kontakt O1120 62606 Luginieski, Marcos Kontakt Marcq, Chiara Kontakt N2140 62607 Müller, Hendrik Kontakt N2160 62612 Panambur, Sumantha Aithal Kontakt O2050 62579 kleine Piening, Jan Kontakt N2160 62642 Rathnayake, Varuni Kontakt N2160 62599 Schweizer, Thomas Kontakt N3170 62583 Striethorst, Luka Kontakt N2140 62588 Tagale, Kapil Kontakt O2090 62609 Trautmann, Tobias Kontakt O1050 62619

Section: FB1

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Institute for Telecommunications and High-Frequency Techniques

Institute for Telecommunications and High-Frequency Techniques The Institute of Telecommunications and High-Frequency Techniques confises three departments: RF & Microwave Engineering, Communication Networks and Communications Engineering. © Universität Bremen/HF RF & Microwave Engineering Prof. Dr.-Ing. Martin Schneider more © Universität Bremen/comnets Communication Networks Prof. Dr. Anna Förster more © Universität Bremen/ant Communications Engineering Prof. Dr.-Ing. Armin Dekorsy more

Section: FB1

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Projects Group Lang

Projects Group Lang To find out more about past and current project work, please follow the links below. © IMSAS Fraunhofer IFAM smartCAST smartCAST – digital castings with condition monitoring for autonomous vehicles In the course of the "smartCAST" project, piezoresistive sensors are being developed for direct embedding in safety-relevant aluminum components in autonomous vehicles. The integrated sensors are intended to monitor critical loads and identify imminent component failure at an early stage. find out more: smartCAST more © #TFE TheFishExperts Tuna Defrosting Defrosting is one of the most critical steps in the logistics and processing chain of tuna. A sensor system will enable optimal defrosting by thawing the fish down to the core without an unnecessary increase of the surface temperature and thus avoid quality losses. find out more: Tuna Defrosting more © EKU https://www.eku-elektronik.de/ Xematic Development of a xenon-capable application device for innovative therapy and anesthesia treatment strategies. find out more: Xematic more © IMSAS FASAN: Antenna-structure for the realization of wireless sensor networks in fibre-metal-laminates Subject of the IMSAS project „FASAN“ is the wireless power provision for newly developed sensors for structural health monitoring (SHM) in fibre-metal-laminates (FML), as well as the wireless data acquisition of those sensors. find out more: FASAN: Antenna-structure for the realization of wireless sensor networks in fibre-metal-laminates more © IMSAS Smart Seal II - Dichtung II Aim of the project is condition monitoring of Elastomer-sealing with integrated pressure sensors. find out more: Smart Seal II - Dichtung II more © IMSAS Read Set The aim of project READSET (Reproduzierbare Applikation von drahtloser Sensorik in technischen Textilien für Faser-Kunststoff-Verbundbauteile auf Basis passiver RFID-Sensortags‘, i.e. ‘Reproducible application of wireless sensor tags onto technical textiles for fibre reinforced plastics, using passive RFID technology‘) is to develop a wireless, material integrated sensor node (often referred to as ‘sensor tag’) for data acquisition inside a fibre reinforced plastic (FRP) component. Additionally, a system for automatic placement of the sensor node during FRP production is to be developed. find out more: Read Set more © IMSAS Hermimplant The longevity of existing flexible neuroimplants is very limited. During the course of the project Hermimplant layer systems will be tested, that can enhance the longevity of electrode structures, in order to make long-lasting application in humans possible. find out more: Hermimplant more © IMSAS Smart Tool - Intelligentes Werkzeug The aim of the project is to equip a conventional progressive stamping die with sensors to monitor process parameters such as cutting and bending forces, cutting speed as well as bending angles. In order to identify tool wear and defective components at an early stage in the production process, the sensor data is analyzed by a network attached microcomputer. find out more: Smart Tool - Intelligentes Werkzeug more © R.Jedermann Monitoring dehumidifying of buildings damaged by water - Project "Baufeuchte" Different sensor technologies for measuring the moisture content in building materials will be evaluated, developed and tested. Sensor information will be used to monitor drying equipment after water-induced damages. find out more: Monitoring dehumidifying of buildings damaged by water - Project "Baufeuchte" more © IMSAS Functional additive fabrication of simple sensor systems The additive fabrication of objects with electrical or magnetic functionality is still a challenge especially for smaller dimensions. We combine different 3D and screen printing techniques to showcase the possibilities of printing custom sensor elements and ‘smart’ parts in a simple way. find out more: Functional additive fabrication of simple sensor systems more © IMSAS Ligand Within the scope of the project, a long-term stable combustible catalytic micro gas sensor will be developed for detecting hydrogen of very low concentration. Metalic nanoparticles linked by organic ligands will be used as catalysts. Long-term stability will be earned by creating a homogeneous temperature field on a catalytic layer by optimizing the design of the microfabricated sensor. Along with long-term stability, the sensor will have low power consumption, high sensitivity, low response time and low cross sensitivity. The Project LIGAND is funded by the DFG - Deutsche Forschungsgemeinschaft. find out more: Ligand more © IMSAS SINA – Sensorintegration in Aluminium Cast Project „SINA“ - Sensorintegration in aluminum cast - piezoresistive sensors for the direct integration in aluminum cast will be developed. Integration taking place during the casting process produces a shape connection between sensor and component which allows the measurement of strain directly at the relevant place in the component. find out more: SINA – Sensorintegration in Aluminium Cast more © IMSAS Lecksensorik Testing for impermeability and detection of leaks play an important role in the construction and installation of Heating, Ventilation and Air Conditioning ( HVAC ) systems and other kinds of equipment. In cooperation with the company ZILA GmbH from Suhl, IMSAS develops a sensor module which can be used for testing HVAC systems and gas pipe systems for leaks. find out more: Lecksensorik more © R. Jedermann COOL: Flow sensor based air management in fruit and vegetable storage In the research project, COOL - flow sensor based air management in fruit and vegetable storage' researchers pursue a novel approach to optimize cooling ventilation. Their aim is to allow energy savings of over 20% and to improve the quality preservation of the stock. find out more: COOL: Flow sensor based air management in fruit and vegetable storage more © M. Vargas Fiber & Flow In cooperation with Faserinstitut Bremen e.V. the FWBI does research on the development of very small pressure sensors for use in fiber reenforced composites. The sensor system will be applied for production control of thick compostie elements in infusion and autoclaving. FWBI produces prototypes and Faserinstitut is embedding the prototypes. The sensorsystem should not change fundamentally the production process (infusion) nor the mechanical properties. Fiber and Flow website Friedrich-Wilhelm-Bessel-Institut © Universität Bremen SFB Prozesssignaturen The project is a part of the Transregional Collaborative Research Centre SFB/TR /TRR 136. The Universities of Bremen, RWTH Aachen and Oklahoma State University, Stillwater ( USA ) are cooperating. The subproject entitled ‘’In situ measurement of mechanical and thermal material loads’’ aims at measuring material deformation and temperature change during manufacturing processes with very high resolution. The measurement will be done using material integrated thin-film sensors that will be fabricated at IMSAS. find out more: SFB Prozesssignaturen more © Universität Bremen Wireless SHM - Wireless sensors / sensor networks for structural fiber health monitoring The FWBI Friedrich-Wilhelm-Bessel Institute is working under the direction of Prof. Lang in collaboration with the FASER Institute e.V. on the project "Wireless sensors / sensor networks for structural fiber health monitoring (SHM) of fiber reinforced composites by means of Lamb waves" short "Wireless SHM". Completed Projects © IMSAS InAuKa II - Development of novel multi-contact floating microelectrodes for the neuroscience InAuKa - “Interareal phase coherence as a mechanism for attention-dependent neuronal signal routing: A model-guided causal analysis using new, multi-contact floating silicon probes for intracortical chronic stimulation and recording in primates”. The project works on characterizing basic dynamic properties while processing visual stimuli in the brain and on developing realistic models for mechanisms taking place. The project’s results are essential for the development of visual neural prostheses, which enable patients with complete blindness to have a visual sensation. find out more: InAuKa II - Development of novel multi-contact floating microelectrodes for the neuroscience more © IMSAS ProWaChip – BioProzesswasserchip The ProWaChip project will develop a Bio-Chip for fast, on-site detection of bacterial contamination in drinkable and industrial water, whose detection principle is based on a high-specific hybridization reaction taking place within the microfluidic chip. The BioChip performs both the lysis and analysis of bacterial RNA in a single substrate. The BioChip will be developed to produce “On-line”, “ in-situ ” detection of two indicator bacteria ( E. Colli and L. pneumophila ), technique which constantly monitors the process water of industries, such the sugar production, and becomes functional in drink water systems in combination with AGIL-equipment. find out more: ProWaChip – BioProzesswasserchip more © IMSAS ReDynForce Using measurement, modeling and feedback control of dynamic forces in order to reduce wind turbines' dynamic forces. The service lifetime of wind energy plants is diminished by strong alternating loads, which are caused by turbulences in wind flow. In future systems improved control algorithms will have to be used, in order to reduce alternating mechanical loads. This requires instant sensory information about a change of flow. The project ReDynForce is funded by AiF and investigates the possibility to implement acceleration sensors into the rotor to get this sensory information right at the beginning of an increased energy input. Based on this information an innovative control strategy will be developed at the FWBI under the direction of Prof. Orlik. © IMSAS Kammsensor In the project „ Kammsensor “ an ultrathin (a few microns) dielectric sensor will be developed to monitor the product life-time of fiber reinforced plastics parts. For this task, the sensor will be embedded in the composite. The focus is on the curing process of the resin which can be measured on-line with this method. Due to the small size the sensor can remain in the composite without disturbing the material’s properties which make it possible to use the sensor also for structural health monitoring. find out more: Kammsensor more © IMSAS [Translate to English:] O-Ring mit integriertem DMS [1] Intelligente Dichtung Elastomerdichtungen finden in vielen Bereichen der Industrie (z.B. Hydraulik, Druckluft) aber auch im Anwenderbereich (z.B. Auto, Wasserleitungen) Verwendung. Obwohl es sich bei Dichtungen um relativ kleine, kostengünstige und unscheinbare Bestandteile eines Systems handelt, kann ein Versagen oft großen Schaden anrichten. Dieses Projekt hat es zum Ziel, Sensoren in Dichtungsringe zu integrieren, um eine permanente Zustandsüberwachung dieser zu ermöglichen, so Ausfälle vorherzusagen und letztendlich zu vermeiden. Zur website Intelligente Dichtung © IMSAS AddSense The project AddSense is focusing on the local fabrication of sensor structures by additive manufacturing like printing, in order to build up material integrated sensors and thus sensorial materials. find out more: AddSense more © R.Jedermann In-Network-Data Analysis of spatially distributed quantities The In-Network-Processing project will start in January 2015. It is the second project following The Intelligent Container project. After a first project on mold/fungi detection, we now put the focus on In-Network-Processing. With this method we want to analyse spatial data, which have been captured by sensor networks. Project Flyer find out more: In-Network-Data Analysis of spatially distributed quantities more © IMSAS Joint Project MaUS - An Autonomous Microreactor System for Detection of Mold Contaminations Group Vellekoop und Group Lang The MaUS project aims at designing an autonomous sensor system for the detection of mold contaminations in archives and in food transport containers. In collaboration with four industrial partners, various mold detection methods based on optical, electrochemical, fluorescence principles etc. will be investigated. One novel way to design such an autonomous system is to automatize the traditional culturing techniques by integrating an air sampling unit. find out more: Joint Project MaUS - An Autonomous Microreactor System for Detection of Mold Contaminations more © IMSAS Creative Unit „I-See das künstliche Auge“ Main objective of the Creative Unit ( CU ) I-See is the development of a cortical visual prosthesis. For this purpose the researchers of the CU plan to investigate the neurobiological bases of feeding elementary visual information into the visual cortex as well as to design a completely wireless implant. For more information please refer to the website: Creative Unit I-See find out more: Creative Unit „I-See das künstliche Auge“ more © IMSAS InAuKa 1 -Development of novel multi-contact floating microelectrodes for the neuroscience InAuKa - “Interareal phase coherence as a mechanism for attention-dependent neuronal signal routing: A model-guided causal analysis using new, multi-contact floating silicon probes for intracortical chronic stimulation and recording in primates”. The project works on characterizing basic dynamic properties while processing visual stimuli in the brain and on developing realistic models for mechanisms taking place. The project’s results are essential for the development of visual neural prostheses, which enable patients with complete blindness to have a visual sensation. mehr » © IMSAS Saphir - Von der Silizium-Mikroelektronik zur nanophotonischen Informationsverarbeitung Das Projekt erarbeitet Basistechnologien für den Übergang von der klassischen Silizium-Mikroelektronik zur photonischen Informationsverarbeitung. find out more: Saphir - Von der Silizium-Mikroelektronik zur nanophotonischen Informationsverarbeitung more © IMSAS KatSense – Katalytische Gassensoren Im Rahmen dieses Projektes wird ein katalytischer Mikrogassensor entwickelt, welcher sich besonders durch einen geringen Leistungsverbrauch, eine kurze Ansprechzeit, eine hohe Empfindlichkeit und eine verbesserte Langzeitstabilität auszeichnet. Dies wird u. a. durch die Verwendung höchstporöser, auf Nanopartikel basierender Katalysatoren erreicht, welche durch organische Netzwerkbildung (Liganden) stabilisiert werden. find out more: KatSense – Katalytische Gassensoren more © IMSAS Flexible Thermoelectric Flow Sensors Based on an existing approach, the Microsystems Center Bremen ( MCB ) develops a thermoelectric flow sensor on a 10 μm thick polyimide foil. The result is a new thermal flow sensor on a thin film substrate which can be easily integrated into different shaped surfaces. The first prototype has been developed at the MCB . (PDF) © IMSAS Thermal Flow Sensor The Microsystems Center Bremen ( MCB ) develops thermal flow sensors based on a new high-temperature fabrication process. The key advantage of this new fabrication process is a high-temperature LPCVD (Low-Pressure Chemical Vapour Deposition) passivation layer that makes the sensor superior for liquid applications, such as in hydraulic systems, or for medical and biological sensing. These flow sensors are also excellent for measuring gaseous flow in pneumatic systems or for wind-speed measurement devices. (PDF) © R.Jedermann „The Intelligente Container" Website of the intelligent container © IMSAS Wireless medical technology More information - only on the German website. © IMSAS Entwicklung von Nanosensoren zur Überwachung von Nahrungsmitteln Gerade für den Entwurf und die Entwicklung mikrofluidischer Systeme bieten sich eine Vielzahl von Anwendungen an, hauptsächlich im Bereich der Biotechnologie. Der besondere Vorteil der Miniaturisierung liegt in den notwendigen geringen Probevolumina (Nano- bis Mikroliter), um Untersuchungen des biologischen Materials, wie z.B. Zellen, Viren oder Bakterien durchführen zu können. mehr » © IMSAS Entwicklung eines mechanisch hoch belastbaren Drucksensors für Bauteile mit Kontaktbeanspruchung Die Überwachung verschiedener Betriebsparameter (Health Monitoring) ist heute schon ein wichtiger Bestandteil beim Betrieb von Anlagen und Geräten. In diesem Projekt wird untersucht, in wie fern Dehnungsmessstreifen in die Lauffläche von Wälzlagern eingebettet werden können, um Dehnungen und Spannungen im laufenden Betrieb messen zu können. Als Einsatzgebiet sind Lager in Offshore-Windkraftanlagen denkbar oder allgemein hochpreisige Lager, deren Wartung, Austausch und Ausfall kritisch sind. mehr » back to research

Section: FB1

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Team

Team © Privat Staff members © Privat Dr. Bálint Aradi Senior scientist Room: TAB 3.12 Tel: +49 421 218 62331 Email GPG-key find out more: Dr. Bálint Aradi more © Privat Juan Ignacio Aranzadi PhD student Room: TAB 3.02 Tel: +49 421 218 62339 Email © Privat Paul Bodewei PhD student Raum: TAB 3.02 Tel: +49 421 218 62337 Email Klaus Bowe Technician Room: NW1 O3210 Tel: +49 421 218 62046 Email Dr. Paul Fadler Postdoc Room: TAB 3.13 Tel: +49 218 421 62343 Email Sarah-Jane Farley Administrator Room: NW1 O3140 Tel: +49 421 218 62031 Email © Privat Nils Jacobsen PhD student Room: TAB 3.02 Tel: +49 421 218 62348 Email Dr. Christof Köhler Senior scientist Room: TAB 3.13 Tel: +49 421 218 62334 Email GPG-key © Privat Dr. Carlos R. Lien-Medrano Guest scientist Email © Lukas Klose Prof. Dr. Michael Sentef Group leader Room: TAB 3.15 & NW1 O3070 Tel: +49 421 218 62039 Email find out more: Prof. Dr. Michael Sentef more © Privat Ferdinand Tölkes Doktorand Raum: TAB 3.02 Tel: +49 421 218 62333 Email © Privat Dr. Huimin Wang Postdoc Room: TAB 3.14 Tel: +49 421 218 62771 Email © Privat Dr. David Yun Yen Postdoc Room: TAB 3.14 Tel: +49 421 218 62342 Email Scholarship holders © Privat Pengcheng Li PhD student Room: NW1 O3050 Email © Privat Changgeng Wei Phd student Room: NW1 O3050 Email © Privat Yang Wu PhD student Room: NW1 O3050 Email Students Finn Wittrock Master student Room: TAB 3.43 Email

Section: FB1

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Publications

Publications Rewiews Publications F. Heinemann, M. Launspach, K. Gries, M. Fritz Gastropod nacre: Structure, properties and growth — Biological, chemical and physical basics Biophysical Chemistry (2011) 153, 126-153. L. Treccani, S. Koshnavaz, S. Blank, K. von Roden, U. Schulz, I. M. Weiss, K. Mann, M. Radmacher, M. Fritz Biomineralizing Proteins in : Biopolymers (2003) Vol. 8, Chapter 11 p. 289-321 Wiley, VCH, Berlin, Steinbüchl (Ed) M. Fritz and D. E. Morse The formation of highly organized biogenic polymer/ceramic composite materials: the high-performance microlaminate of molluscan nacre Curr. Op. Coll. Interfac. Sci. (1998) 3 55-62 since 2000 M. Launspach, K. I. Gries, F. Heinemann, A. Hübner, M. Fritz, M. Radmacher Mapping nanomechanical properties of freshly grown, native, interlamellar organic sheets on flat pearl nacre. Acta biomaterialia (2014) 10, 3986-3996 M. Dietzsch, M. Barz,, T. Schüler, S. Klaasen, M. Schreiber, M. Susewind, N. Loges, M. Lang, N. Hellmann, M. Frit, K. Fischer, P. Theato, A. Kühne, M. Schmidt, R. Zentel, W. Tremel PAA-PAMPS Copolymers as an Efficient Tool CaCO 3 Scale Formation Langmuir , (2013) 29, 3080-88 K. Gries, F. Heinemann, A. Rosenauer, M. Fritz In vitro growth of flat aragonite crystals between the layers of the insoluble organic matrix of the abalone Haliotis laevigata Journal of Crystal Growth , (2012) 358, 75-80 M. Launspach, K. Rückmann, M. Gummich, H. Rademaker, H. Doschke, M. Radmacher, M. Fritz Immobilisation and Characterisation of the Demineralised, Fully HydrateOrganic Matrix of Nacre Micron (2012) 43, 1351-1363 K. Gries, F. Heinemann, M. Gummich, A. Ziegler, A. Rosenauer, M. Fritz Influence of the Insoluble and Soluble Matrix of Abalone Nacre on the Growth of Calcium Carbonate Crystals Crystal Growth & Design (2011) 11, 729-734 F. Heinemann, M. Gummich, M. Radmacher, M. Fritz Classification method for biomineralising proteins according to their influence on CaCO 3 precipitation rates Mat. Sci. Eng. C (2011) 31, 99-105 K. Gries, R. Kröger, C. Kübel, M. Fritz, and A. Rosenauer Investigations of voids in nacre Acta Biomat. (2009) 5, 3038-3044 K. Gries, R. Kröger, C. Kübel, M. Schowalter, M. Fritz, A. Rosenauer Correlation of stacked aragonite platelets in nacre and their connection via mineral bridges Ultramicroscopy (2009) 109, 230-236 K. Mann, F. Siedler, L. Treccani, F. Heinemann, M. Fritz Perlinhibin, a cystein-, histidin- and arginine-rich miniprotein from abalone (Haliotis laevigata ) nacre inhibits in vitro calcium carbonate crystallization Biophys. J . (2007) 93, 1-9 L. Treccani, K. Mann, F. Heinemann, M. Fritz Perlwapin, an abalone nacre protein with three four-disulfide core (WAP) domains, inhibits growth of calcium carbonate crystals Biophys. J. (2006) 91 2601-2608 F. Heinemann, L. Treccani, M. Fritz Abalone nacre insoluble matrix induces growth of flat and oriented aragonite crystals Biochem. Biophys. Res. Com. (2006) 344, 45-49 M. Arnoldi, T. Schäffer, M. Fritz, M. Radmacher Direct observation of single catalytic events of chitosanase by atomic force microscopy Online J. Nanotech (2005) 1 1- 11 www.azonano.com/Details.asp S. Blank, M. Arnoldi, S. Koshnavaz, L. Treccani, M. Kuntz, K. Mann, G. Grathwohl, M. Fritz The nacre protein perlucin nucleates growth of calcium carbonate crystals J. of Microscopy (2003) 212 280-291 Weiss, Ch. Renner, M. G. Strigl, M. Fritz A simple and reliable method for the determination and localization of chitin in abalone nacre Chem. Mat. (2002) 14 3252-3259 M. Weiss, W. Göhring, M. Fritz, K. Mann Perlustrin, a Haliotis laevigata (abalone) nacre protein is homologous to the insulin-like growth factor binding protein N-terminal module of vertebrates Biophys. Biochem. Res. Comm. . (2001) 285 244-249 N. Persike, M. Pfeiffer, R. Guckenberger, M. Radmacher, M. Fritz Direct observation of different surface structures on high resolution images of native halorhodopsin J. Mol Biol. (2001) 310 773-780 K. Mann, I. M. Weiss, S. André, H.-J. Gabius, M. Fritz The amino-acid sequence of the abalone ( Haliotis laevigata ) nacre protein perlucin. Detection of a functional C-type lectin domain with galactose/mannose specificity Eur. J. Biochem. (2000) 267 5257-5264 M. Arnoldi, M. Fritz, E. Bäuerlein, M. Radmacher, E. Sackmann, A. Boulbitch Can bacterial turgor pressure be measured by atomic force microscope? Phys. Rev.E. (2000) 62 1034-1044 M. Weiss, S. Kaufmann, K.-H. Mann, M. Fritz Purification and characterization of perlucin and perlustrin, two new proteins from the shell of the mollusc Haliotis laevigata Biophys. Biochem. Res. Comm. , (2000) 267 17-21 N. Persike, M. Pfeiffer, R. Guckenberger, M. Fritz Changes in the surface structure of purple membrane upon illumination measured by atomic force microscopy Coll. Surf. Sci, B (2000) 19 325-332 C. M. Kacher, I. M. Weiss, R. J. Stewart, C. F. Schmidt P. K. Hansma, M. Radmacher, M. Fritz Imaging of microtubules and kinesin decorated microtubules using tapping in fluids atomic force microscopy Eur. Biophys. J. , (2000) 28 611-620 1992 - 1999 M. Radmacher, M. Fritz-Stephan, H. E. Gaub Changes in surface topology of amorphous silicon oxide and mica after ion milling Pure & Appl. Chem. (1992) 64 1635-1639 M. Radmacher, R. W. Tillmann, M. Fritz, H. E. Gaub From molecules to cells- imaging soft samples with the AFM Science (1992) 257 1900-1905 M. Fritz, R. M. Zimmermann, M. Bärmann, H. E. Gaub Actin-binding to lipid-inserted alpha-actinin Biophys. J. (1993) 65 1878-1885 M. Fritz, M. Radmacher and H. E. Gaub In vitro activation of human platelets triggered and probed by SFM Exp. Cell Res. (1993) 205 187-190 M. Fritz, M. Radmacher, N. Petersen, H. E. Gaub Visualization and identification of intracellular structures by force modulation microscopy and drug induced degradation J. Vac. Sci. Techn. B (1994) 12 1526-1529 M. Fritz, A. M. Belcher, M. Radmacher, D. A. Walters, P. K. Hansma, G. D. Stucky, D. E. Morse, S. Mann Flat pearls from biofabrication of organized composites on inorganic substrates Nature (1994) 371 49-51 M. Fritz, M. Radmacher, H. E. Gaub Granula motion and membrane spreading during activation of human platelets imaged by AFM Biophys. J. (1994) 66 1328-1334 M. Radmacher, J. P. Cleveland, M. Fritz, H. G. Hansma, P. K. Hansma Mapping interaction forces with the atomic force microscope Biophys. J. (1994) 66 2159-2165 P. K. Hansma, J. P. Cleveland, M. Radmacher, D. A. Walters, P. E. Hillner, M. Bezanilla, M. Fritz, D. Vie, H. G. Hansma, C. B. Prater, J. Massie, L. Fukunaga, J. Gurley, V. Elings Tapping mode atomic force microscopy in liquids Appl. Phys. Lett. (1994) 64 1738-1740 M. Radmacher, M. Fritz, J. P. Cleveland, D. A. Walters, P. K. Hansma Imaging adhesion forces and elasticity of lysozyme adsorbed on mica by AFM Langmuir (1994) 10 3809-3814 M. Radmacher, M. Fritz, H. G. Hansma, P. K. Hansma Direct observation of enzyme activity with the AFM Science (1994) 265 1577-1579 M. Radmacher, M. Fritz, P. K. Hansma Imaging soft samples with the AFM: Gelatin in water and propanol Biophys. J. (1995) 69 264-270 M. Fritz, M. Radmacher, J. P. Cleveland, R. Gieselmann, C. F. Schmidt, M. W. Allersma, R. J. Stewart, D. E. Morse, P. K. Hansma Imaging globular and filamentous proteins in physiological buffer solution in tapping mode atomic force microscopy Langmuir (1995) 11 3529-3535 M. Fritz, M. Radmacher, J. Cleveland, M. W. Allersma, R. J. Stewart, P. K. Hansma, C. F. Schmidt Imaging microtubules using tapping mode in liquids atomic force microscopy Proceedings of the SPIE (1995) 2384 150-157 C. M. Zaremba, A. M. Belcher, M. Fritz, P. K. Hansma, Y. Li, D. E. Morse, J. S. Speck, G. D. Stucky Critical transitions in the biofabrication of red abalone shells and flat pearls Chem. Mat. (1996) 8 679-690 M. Radmacher, M. Fritz, C. M. Kacher, J. P. Cleveland, P. K. Hansma Measuring viscoelastic properties of human platelets with the AFM Biophys. J. (1996) 70 556-567. N. H. Thomson, M. Fritz, M. Radmacher, P. K. Hansma Protein tracking and observation of protein motion using AFM Biophys. J. (1996) 70 2421-2431. T. M. Schäffer, C. Ionescu-Zanetti, R. Proksch, M. Fritz, D. A. Walters, N. Almquist, C. M. Zaremba, A. M. Belcher, B. L. Smith, G. D. Stucky, D. E. Morse, P. K. Hansma Does abalone nacre form by heteroepitaxial nucleation or by growth through mineral bridges? Chem. Mat. (1997) 9 1731-1740 M. Arnoldi, C. M. Kacher, E. Bäuerlein, M. Radmacher, M. Fritz Elastic properties of the cell wall of Magnetospirillum gryphiswaldense investigated by atomic force microscopy Appl. Phys. A (1998) 66 S613-S617

Section: FB1

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Research

Research Publications and Talks A Study on Dielectric Lens Antennas fed by Circular Dielectric Waveguides for D-Band Applications A. Pal, D. Dutta, M. Schneider International Journal of Microwave and Wireless Technologies, June 2026, https://doi.org/10.1017/S1759078726103286 Mono-Block Orthomode Transducers for W-Band Applications A. Pal, D. Dutta, L.Hinz, M. Schneider German Microwave Conference (GeMiC) 2026, 09.-11. March 2026, Karlsruhe, DOI: 10.1109/GeMiC71240.2026.11516430 Analysis, Design, and Fabrication of a High-Gain Low-Profile Metasurface Antenna using direct Feeding of Sievenpiper’s HIS A. Ghaneizadeh,S. F. Peik, M. Schneider, M. Joodaki Nature Scientific Reports, 15, 42940 (12/2025), DOI: 10.1038/s41598-025-30458-8 Orthomode Transducer and Polarizer for the Practical Application of Circular Dielectric Waveguides in W Band and D Band M. Schneider 2025 International Conference on Electromagnetics in Advanced Applications (ICEAA), 8 - 12 September 2025, Palermo, Italy, DOI: 10.1109/ICEAA65662.2025.11305976 A Frequency Beam-Scanning TMA Without Utilizing Phase Shifters or Complex Feeds A. Ghaneizadeh, Soeren F. Peik, M. Schneider, M. Joodaki 2025 Nineteenth International Congress on Artifical Materials for Novel Wave Phenomena (Metamaterials), 1 -6 September 2025, Amsterdam, Netherlands, DOI: 10.1109/Metamaterials65622.2025.11174230 High-Gain Dielectric Lens Antenna Fed by Circular Dielectric Waveguide for Applications in D-Band A. Pal, D. Dutta, M. Schneider European Conference on Antennas and Propagation 2025 (EuCAP), 30 March - 4 April 2025, Stockholm, Sweden, DOI: 10.23919/EuCAP63536.2025.10999273 Analysis, Design, and Fabrication of a High-Gain Low-Profile Metasurface Antenna Using Direct Feeding of Sievenpiper's HIS A. Ghaneizadeh, Soeren F. Peik, M. Schneider, M. Joodaki Preprint December 2024, DOI: 10.4855o/arXiv.2412.02502 A New Compact Ultra-Thin Circularly Polarized True Metasurface Antenna A. Ghaneizadeh, S. F. Peik, M. Schneider, M. Joodaki Eighteenth International Congress on Artificial Materials for Novel Wave Phenomena (Metamaterials) 9-14 September 2024, Crete, Greece, DOI: 10.1109/Metamaterials62190.2024.10703261 Circular Dielectric Waveguides for D-Band Applications in Communications and Radar M. Schneider International Conference on Electromagnetics in Advanced Applications (ICEAA-IEEE APWC), 2-6 September 2024, Lisboa, Portugal, IEEE Xplore Link Normalized Design Charts for Low-loss and Dispersion-Minimized Circular Dielectric Waveguides for Millimeter Waves M. Schneider, A. Meyer German Microwave Conference 2024 (GeMiC), 11-13 March 2024, Duisburg, Germany, IEEE Xplore Link Compact Transitions for Loopback Testing of Packaged Antennas with Waveguide Launchers A. Pal, M. Schneider 53 rd European Microwave Conference 2023 (EuMC), 19-21 September 2023, Berlin, DOI: 10.23919/EuMC58039.2023.10290420 Dispersion-Minimized Low-Loss Dielectric Waveguides for High Data-Rate Transmission at Millimeter Wave Frequencies M. Schneider, A. Meyer PMF 2023 , 2nd International Workshop on Polymer Microwave Fiber Technology, March 7-8, 2023, Leuven, Belgium QAM-4 Dielectric Waveguide Communication Link for Mid-range Distances at W-Band Frequencies A. Meyer, M. Schneider German Microwave Conference 2022 (GeMiC), 16-18 May 2022, Ulm, Gemany, IEEE Xplore Link Loopback Testing of Automotive 77 GHz Antenna-in-Package Radar Transceiver ICs A. Pal, M. Schneider, A. Zanati German Microwave Conference 2022 (GeMiC), 16-18 May 2022, Ulm, Gemany, IEEE Xplore Link Signal Distortions in Circular Dielectric Waveguides at mm-Wave Frequencies A. Meyer, M. Schneider International Journal of Microwave and Wireless Technologies, Volume 14 , Issue 1 , February 2022 , pp. 8 – 18, DOI: 10.1017/S1759078721000209 Robust Design of a Broadband Dual-polarized transition from PCB to Circular Dielectric Waveguide for mm-Wave Applications A. Meyer, M. Schneider International Journal of Microwave and Wireless Technologies, Vol. 12, no. 7, pp. 559-566, April 2020, DOI: 10.1017/S175907872000032X Broadband Stacked-Patch Transition from Microstrip Line to Circular Dieletric Waveguide for Dual-Polarized Applications at W-Band Frequencies A. Meyer, S. Karau, M. Schneider European Microwave Conference EuMC 2019, October 2019, Paris, France, DOI: 10.23919/EuMC.2019.8910938 Low-Dispersive Transition from Circular Metallic to Circular Dielectric Waveguides at W-Band Frequencies A. Meyer, K. Krüger, J. Obermeyer, M. Schneider German Microwave Conference 2019 (GeMiC), March 2019, DOI: 10.23919/GEMIC.2019.8698177 Modal Dispersion Reduction in Multi-Mode Circular Dielectric Waveguides at W-Band Frequencies A. Meyer, B. Turan, M. Schneider European Microwave Conference EuMC 2018, 23-28 September 2018, Madrid, Spain, DOI: 10.23919/EuMC.2018.8541752 Dispersion-Minimized Rod and Tube Dielectric Waveguides at W-Band and D-Band Frequencies A. Meyer, K. Krüger, M. Schneider IEEE Microwave and Wireless Components Letters, Vol. 28, no. 7, pp. 555-557, July 2018, DOI: 10.1109/LMWC.2018.2839649 Implications for a Wireless, External Device System to Study Electrocorticography D. Rotermund 1, J. Pistor, J. Hoeffmann, T. Schellenberg, D. Boll, E. Tolstosheeva, D. Gauck, H. Stemmann, D. Peters-Drolshagen, A. K. Kreiter, M. Schneider, S. Paul, W. Lang, K. R. Pawelzik Sensors 2017, 17, 761 , April, 4, 2017 In-Orbit Reconfigurable Waveguide Filter C. Arnold, J. Parlebas, T. Zwick, M. Schneider European Microwave Conference EuMC 2016, October 3 -7, 2016; London, UK 90 Degree Microstrip to Rectangular Dielectric Waveguide Transition in the W-Band J. Häseker, M. Schneider IEEE Microwave and Wireless Components Letters, Vol. 26, no. 6, pp. 416-418, June 2016 DOI: http://dx.doi.org/10.1109/LMWC.2016.2558640 Dielectric Permittivity Determination in W-Band with Dielectric Ring Resonators J. Häseker, S. Vogt, M. Schneider German Microwave Conference GeMiC 2016, March 14-16, 2016, Bochum, Germany Open Hardware: Towards a Fully-Wireless Sub-Cranial Neuro-Implant for Measuring Electrocorticography Signals D. Rotermund, J. Pistor, J. Hoeffmann, T. Schellenberg, D. Boll, E. Tolstosheeva, D. Gauck, D. Peters-Drolshagen, A. K. Kreiter, M. Schneider, St. Paul, W. Lang, K. R. Pawelzik DOI: http://dx.doi.org/10.1101/036855 , January 2016 DoA Estimation With Reduced Hardware Complexity Markus Stefer Dissertation, University of Bremen, September 21, 2015, published: Verlag Dr. Hut, ISBN 978-3-8439-2617-1 Directivity of Monopoles Forming a UCA and Resolution Capability of MUSIC M. Stefer, M. Schneider Workshop on Smart Antennas WSA 2014 , March 12-13, 2014, Erlangen, Germany Multi-User Pre-Processing in Multi-Antenna OFDM TDD Systems with Non-Reciprocal Transceivers M. Petermann, M. Stefer, F. Ludwig, D. Wuebben, M. Schneider, S. Paul, and K-D. Kammeyer IEEE Transactions on Communications , Vol. 61, No. 9, pp. 3781-3793, September 2013 GMRES-FFT Accelerated Magnetoquasistatic Calculations Using PEEC T. Schellenberg, M. Schneider International Symposium on Electromagnetic Compatability EMC Europe 2013, September 2-6, 2013, Brugge, Belgium DoA Estimation Combining Uniform Circular Array and Sequential Array Processing M. Stefer, Ch. Schmedt, M. Schneider European Microwave Week EuMW 2013, Nuremberg, Germany Towards a Wireless and Fully-Implantable ECOG System E. Tolstosheeva, J. Hoeffmann, J. Pistor, D. Rotermund, T. Schellenberg, D. Boll, T. Hertzberg, V. Gordillo-Gonzalez, S. Mandon, D. Peters-Drolshagen, M. Schneider, K. Pawelzik, A. Kreiter, S. Paul, and W. Lang Transducers 2013 & Eurosensors XXVII , June 16-20, 2013, Barcelona, Spain Development of a Fully Implantable Recording System for ECoG Signals J. Pistor, J. Hoeffmann, D. Rotermund, E. Tolstosheeva, T. Schellenberg, D. Boll, V. G. Gonzalez, S. Mandon, D. Peters-Drolshagen, A. Kreiter, M. Schneider, W. Lang, K. Pawelzik and S. Paul Proceedings, DATE Conference, March 18-22, 2013, Grenoble, France Antenna-in-Package (AiP) in mm-Wave Band M. Alhenawy, M. Schneider International Journal of Microwave and Wireless Technologies , Cambridge University Press, Vol. 5, pp. 55-64, 2013 Network Analysis of the Influence of Hardware Imperfections on DoA Estimation M. Stefer, S. Kablitz, M. Schneider European Microwave Conference EuMC 2012 , October 28 - November 2, 2012, Amsterdam, The Netherlands Accelerated Methods for Computing Internal Inductances of Rectangular Conductors T. Schellenberg, G. Xu, M. El-Arabied, M. Schneider International Symposium on Electromagnetic Compatability EMC Europe 2012 , September 17-21, 2012, Rome, Italy A wireless and fully implantable recording system for ECoG signals D. Rotermund D. Boll, V. Gordillo-Gonzales, D. Gould, T. Hertzberg, J. Hoeffmann, S. Mandon, D. Peters-Drolshagen, J. Pistor, M. Richter, T. Schellenberg, E. Tolstosheeva, G. Widman, C. Elger, W. Lang, S. Paul, M. Schneider, K. Pawelzik, A. Kreiter Bernstein Conference 2012 (BCCN), September 12-14, 2012, Munich, Germany Rectangular Waveguide to Coplanar Stripline Transition Based on a Unilateral Finline M. Al Henawy, M. Schneider European Conference on Antennas and Propagation EuCAP 2012 , Prague, Czech Republic Inductive Link for Biomedical Implants in the MICS Band T. Schellenberg, G. Xu, M. Schneider German Microwave Conference GeMIC 2012, Ilmenau, Germany Differentially Driven Loop Antennas at 77 GHz M. Al Henawy, N. Aliya, M. Schneider German Microwave Conference GeMIC 2012, Ilmenau, German Integrated Antennas in eWLB Packages for 77 GHz and 79 GHz Automotive Radar Sensors M. Al Henawy, M. Schneider European Microwave Conference 2011 , October 2011, Manchester, United Kingdom Relative Navigation with High-Frequency Radio Waves D. Bindel, M. Stefer, D. Padeletti, G. Arantes Jr. 62nd International Astronautical Congress (IAC), October 2011, Cape Town, South Africa Enhanced Adaptive Downlink Transmission in MIMO-OFDM Systems by Hardware-Based Calibration M. Stefer, M. Petermann, M. Schneider, D. Wübben, K-D. Kammeyer 16th International OFDM Workshop 2011 (InOWo' 11), 31st August - 1st September 2011, Hamburg, Germany 60 GHz Planar Antenna Arrays on Thermoplastic Material and RoCC Antenna-in-Package Technology M. Schneider IWPC Workshop on “60 GHz Short Range Wireless – What is the Future?” , May 2011, Berlin, Germany The RoCC Project and 76-81 GHz Antenna-in-Package Technology M. Schneider IWPC Workshop on “Automotive Radar Safety for Everybody” , February 2011, Karlsruhe, Germany Planar 77GHz Antennas on New Thermoplastic Polymer Substrate M. Schneider, M. Richter Asia Pacific Microwave Conference APMC 2010, December 7-10, Yokohama, Japan Antennas in eWLB package M. Schneider, M. Al Henawy European Microwave Conference 2010, WFF01, September 26 - October 1, 2010, Paris, France Low-Complexity Calibration of Mutually Coupled Non-Reciprocal Multi-Antenna OFDM Transceivers M. Petermann, M. Stefer, D. Wübben, M. Schneider, K.-D. Kammeyer 7th International Symposium on Wireless Communication Systems, September 19-22, 2010, York, United Kingdom An Enhanced MIMO Hardware Demonstrator - Polarization Diversity in Adaptive OFDM Systems M. Petermann, M. Stefer, D. Wübben, M. Schneider, K.-D. Kammeyer 15th International OFDM-Workshop 2010, 1.-2. September 2010, Hamburg, Germany Planar Antenna Arrays at 60 GHz Realized on a New Thermoplastic Polymer Substrate M. Al Henawy, M. Schneider European Conference on Antennas and Propagation EuCAP 2010 , 12-16 April 2010, Barcelona, Spain 77 GHz Automotive Digital Beamforming Radar with SiGe Chipset M. Richter, M. Schneider, P. Wenig, R. Weigel German Microwave Conference GeMiC 2010, 15 - 17 March 2010, Berlin, Germany New Thermoplastic Polymer Substrate for Microstrip Antennas at 60 GHz M. Al Henawy, M. Richter, M. Schneider German Microwave Conference GeMiC 2010, 15 - 17 March 2010, Berlin, German KRAFAS – Projektergebnisse der innovativen Einbetttechnologien CID und CHIP+ für den Einsatz in automobilen Radarsensoren J. Kostelnik, F. Ebling, K.-F. Becker, R. Kahle, A. Kugler, J.-P. Sommer, E. Noack, M. Richter, M. Schneider Elektronische Baugruppen und Leiterplatten EBL 2010 , 24.-25. Februar 2010, Fellbach, Germany On Modeling Antenna Coupling for Adaptive MIMO-OFDM Systems M. Stefer, M. Schneider Workshop on Smart Antennas WSA 2010, 23 - 24 February 2010, Bremen, Germany Iterative Pre–Compensation of I/Q Imbalances in an Adaptive 2.4 GHz MIMO–OFDM System M. Petermann, M. Niemiec, D. Wübben, M. Stefer, M. Schneider Workshop on Smart Antennas WSA 2010, 23 - 24 February 2010, Bremen, Germany Embedding Technology Development for a 77 GHz Automotive Radar System K.-F. Becker, M. Koch, R. Kahle, T. Braun, L. Böttcher, A. Ostmann, J. Kostelnik, F. Ebling, E. Noack, J.P. Sommer, M. Richter, M. Schneider, H. Reichl Mikrosystemtechnik Kongress 2009 , 12.-14. October 2009, Berlin, Germany Influence of Non-reciprocal Transceivers at 2.4 GHz in Adaptive MIMO-OFDM Systems M. Stefer, M. Petermann, M. Schneider, D. Wübben, K.-D. Kammeyer 14th International OFDM-Workshop 2009, 2.-3. September 2009, Hamburg, Germany Substrate-Embedded Millimeter Wave SiGe VCO Chip M. Richter, M. Schneider International Microwave Symposium IMS 2009, June 7-12, 2009, Boston, USA Substrate-Embedded Millimeter Wave SiGe VCO Chip M. Richter, M. Schneider International Microwave Symposium IMS 2009, June 7-12, 2009, Boston, USA Embedding Technologies for an Automotive Radar System K.-F. Becker, M. Koch, R. Kahle, T. Braun, L. Böttcher, A. Ostmann, J. Kostelnik, F. Ebling, E. Noack, J.P. Sommer, M. Richter, M. Schneider, H. Reichl Electronic Components and Technology Conference ECTC 2009, May 26-29, 2009, San Diego, USA KRAFAS - Kostenoptimierte Radarsensorik für aktive Fahrerassistenzsysteme M. Schneider, K.-F. Becker, K. Schneider BMBF Clustermeeting "Fahrerassistenzsysteme",May 4, 2009, Berlin, Germany Indoor Relative Localization with Mobile Short-Range Radar K. Yokoo, S. Beauregard, M. Schneider Vehicular Technology Conference VTC 2009, April 26-29, 2009, Barcelona, Spain Interconnects for Buried W-Band MMICs Using Novel System-in-Package Technology M. Richter, K.-F.Becker, L. Böttcher, M. Schneider German Microwave Conference GeMiC 2009, March 16-18, 2009, Munich, Germany Design of 77 GHz Interconnects for Buried SiGe MMICs Using Novel System-in-Package Technology M. Richter, K.-F. Becker, M. Schneider European Microwave Conference 2008, October 28-30, 2008, Amsterdam, The Netherlands High Resolution Channel Estimation Using Expectation Maximization Algorithms O. Qaise, S. Sand, M. Schneider German Aerospace Congress 2008, September 2008, Darmstadt, Germany 77 GHz Radar für aktive Fahrerassistenzsysteme mit neuartiger Chip-Packaging Technologie M. Schneider SMT/Hybrid/Packaging 2008, June 4, 2008, Nuremberg, Germany Performance Analysis of a Cylindric Dielectric Lens Antenna for 77GHz Automotive Radar P. Wenig, M. Schneider, R. Weigel International Radar Symposium 2008, May 21-23, 2008, Wroclaw, Poland A Dielectric Lens Antenna for Digital Beamforming and Superresolution DOA Estimation in 77 GHz Automotive Radar P. Wenig, R. Weigel, M. Schneider International ITG Workshop on Smart Antennas WSA-2008, February 26-27, 2008, Darmstadt, Germany Fernbereichsradar und kostengünstige Fertigung M. Schneider, J. Hilsebecher BMBF Workshop FASVision - Mikrosystemtechnik für Fahrerassistenzsysteme, 3. Dezember 2007, Munich, Germany Smart Antennas for Automotive Radar Front-Ends: from Beam Steering to high-resolution Algorithms J. Schöbel, M. Schneider European Microwave Week 2007, October 8-12, 2007, Munich, Germany Advances in Microsystems Technology and RF Microelectronics for Highly Integrated 77 GHz Automotive Radar Sensors M. Schneider IEEE International Microwave Symposium IMS 2007, Workshop on "Low-cost, Integrated, Automotive and Industrial Radar Sensors", June 2007, Honolulu, USA KRAFAS – Innovationen in der Mikrosystemtechnik und der Hochfrequenz-Mikroelektronik für kostenoptimierte Radarsensoren im Automotive-Bereich M. Schneider VDE Kongress 2006, October 23-25, 2006, Aachen, Germany Tutorial on Automotive Radar Sensors and Systems M. Schneider, A. Hoess IWPC Millimeter Wave Markets & Technology Week, September 17-22, 2006, Washington DC, USA Beam steering with RF-MEMS in W-band automotive radar systems,“ Workshop on “Frequency-Agile Radio: Systems and Technologies J. Schöbel, Th. Buck, M. Schneider IEEE International Microwave Symposium IMS 2006, June 2006, San Francisco, USA Hochintegrierte 77 GHz Weitbereichsradarsensorik für zukünftige Fahrerassistenzsysteme M. Schneider, Th. Walter Öffentliches Statusseminar des BMBF Verbundvorhabens „Kfz-Höchstfrequenz-Elektronik KOKON“, RadioTecC 2005, 26.-27. Oktober 2005, Berlin, Germany Design Considerations and Technology Assessment of Phased-Array Antenna Systems with RF-MEMS for Automotive Radar Applications J. Schöbel, T. Buck, M. Reimann, M. Ulm, M. Schneider, A. Jourdain, Geert J. Carchon, H. Tilmans IEEE Transactions on Microwave Theory and Techniques, vol. 53, No. 6, June 2005 Automotive Radar – Status and Trends M. Schneider German Microwave Conference GeMiC 2005 , 5.-7. April 2005, Ulm, Germany Planar Phased Array Antenna Systems for W-Band Automotive Radar Sensors with Beam Steering Based on RF MEMS J. Schöbel, T. Buck, M. Reimann, M. Ulm, T. Hansen, M. Schneider Special Issue on „Tunable Microwave Components and RF-MEMS“, Frequenz, vol. 59, No. 1-2, 2005 Antennas for Civil Radar Applications J. Freese, M. Schneider, R. Jakoby 13th International Symposium on Antennas, JINA 2004, Nizza, November 2004 W-Band RF-MEMS Subsystems for Smart Antennas in Automotive Radar Sensors J. Schöbel, T. Buck, M. Reimann, M. Ulm, M. Schneider European Microwave Conference EUMC 2004, October 2004, Amsterdam, The Netherlands RF-MEMS Subsystems for Automotive Radar Sensors with Smart Antennas J. Schöbel, M. Schneider 2nd VDE World Microtechnologies Congress Micro.tec 2003, October 2003, Munich, Germany 24 GHz Short Range Radar Sensors with Angular Resolution M. Schneider IWPC Workshop on “Millimeterwave Markets, Applications and Technologies from 20-100 GHz – An Overview,” May 2003, Stuttgart, Germany 24 GHz Nahbereichssensoren mit Intelligenten Antennen M. Schneider BMBF Workshop “Fortgeschrittene Systemtechnologien und Verfahren zur Beurteilung bewegter 3D-Szenarien“, December 2002, Universität Siegen, Germany Funkbasierte Sensorsysteme für Fahrerassistenz M. Schneider ITG Kolloquium „Funk und Bildverarbeitung für Fahrerassistenz- und Fahrerinformationssysteme“, September 2002, Hildesheim, Germany 24 GHz Short Range Radar (SRR) Sensors with Smart Antennas M. Schneider, V. Groß, O. Brüggemann, T. Focke, T. Hansen, J. Schöbel, T. Schöberl German Radar Symposium 2002, September 2002, Bonn, Germany Smart Antennas and their Relevance for Car Radar Sensors M. Schneider IEEE International Microwave Symposium IMS 2002, June 2002, Seattle, USA High Performance Transitions for Overmoded Operation of Elliptical Waveguides U. Rosenberg, M. Schneider IEEE Trans. on Microwave Theory and Techniques, 2000, Vol. 48, No. 10, pp. 1749-1755 Power Splitting Transition for Circularly Polarized Feed Networks U. Rosenberg, M. Schneider IEEE Microwave and Guided Wave Letters, 2000, Vol. 10, No. 8, pp. 307-309 Fast Computation of Modified Mathieu Functions Applied to Elliptical Waveguide Problems M. Schneider IEEE Trans. on Microwave Theory and Techniques, 1999, vol. 47, No. 4, pp. 513-515 Waveguide Circuits with Nearly Arbitrary Cross Sections J. Marquardt, M. Schneider International Conference on Microwave and Millimeter Wave Technology (ICMMT), Beijing, Proceedings, Aug. 1998, pp. 557-560 Dispersions- und Dämpfungseigenschaften der Eigenmoden periodisch gewellter Hohlleiter M. Schneider Dissertation, Universität Hannover, 1997 Mode Matching Method for the Calculation of Steps between Rectangular and Elliptical Waveguides M. Schneider, J. Marquardt International Journal of Electronics and Communications (AEÜ), Vol. 50, 1996, No. 6, pp. 375-383 Transmission Characteristics of Corrugated Waveguides with Arbitrary Cross Sections M. Schneider, J. Marquardt International Journal of Electronics and Communications (AEÜ), Vol. 50, 1996, No. 3, pp. 196-200

Section: FB1

Relevance:

2%
Publications

Publications Publications at the group of Prof. Dr. Falta 2025 2024 2023 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 2002 2001 >2000 2025 Structural evolution and nucleation dynamics of RF sputtered Ga 2 O 3 films on Ru(0001): The impact of deposition temperature and Ru surface morphology A. Baunthiyal, M. Schowalter, M. Williams, J.-O. Krisponeit, T. Mehrtens, A. Karg, A. Rosenauer, M. Eickhoff, and J. Falta APL Materials 13 , (2025), 041130 DOI: 10.1063/5.0270431 Stabilization of Ce 3+ cations via U-Ce charge transfer in mixed oxides: consequences on the thermochemical water splitting to hydrogen C. Morales, R. Tschammer, T. Gouder, YM Choi, D. Anjum, A. Baunthiyal, J.-O. Krisponeit, J. Falta, J.I. Flege, and H. Idriss Journal of Physics: Energy 7 (2), (2025), 025012 DOI: 10.1088/2515-7655/adbad9 High-Temperature Growth of CeO x on Au(111) and Behavior under Reducing and Oxidizing Conditions R. Tschammer, L. Buß, E. Pozarowska, C. Morales, SD Senanayake, M.J. Prieto, L.C. Tanase, L. de Souza Caldas, A. Tiwari, T. Schmidt, M.A. Nino, M. Foerster, J. Falta, and J.I. Flege J. Phys. Chem. C 129 (7), (2025), 3583-3594 DOI: 10.1021/acs.jpcc.4c8072 The Relationship between Sm alloying and structure sensitivity of ceria(111)-and (100)-oriented nanoislands on Cu(111) E. Pozarowska, L. Pleines, M.J. Prieto, L.C. Tanase, L. de Souza Caldas, A. Tiwari, T. Schmidt, J. Falta, C. Morales, and J.I. Flege Phys. Chem. Chem. Phys., (2025) DOI: 10.1039/d5cp01171j Hexagons on rectanges: Epitaxial graphene on Ru101¯0 L. Buß, G. Zamborlini, C. Sulaiman, M. Ewert, M. Cinchetti, J. Falta, and J.I. Flege Carbon 231 (2025), 119600 DOI : 10.1016/j.carbon.2024.119600 Rise and fall of 1T-TaS 2 : Epitaxial growth of monolayer TaS 2 on Au(111) L. Buß, C. Sulaiman, R. Sanchez-Barquilla, J. Corocariu, M. Szpytma, T.O. Mentes, A. Locatelli, J. Falta, and J.I. Flege Phys. Rev. Mat. 9 , (2025), 074006 DOI: 10.1103/1bxg-yvw2 Transition metal dichalcogenide surfaces as scattering targets in spin-polarization detectors: A case study of MoS 2 C. Angrick, A. Henriksen, N. Edossa, A. Reimann, M. Ewert, L. Buß, J. Falta, J.I. Flege, and M. Donath Phys, Rev. B 112 (2025), 235408 DOI: 10.1103/fln2-pf6n In-situ growth and characterization of 2D TaSe 2 on Au(111) C. Sulaiman, L. Buß, R. Sanchez-Barquilla, J. Falta, and J.I. Flege Deutsche Physikalische Gesellschaft (2025) Growth and oxidation of ultra-thin Pt-Sn layers on Pt(111) by molecular and atomic oxygen N. Braud, L. Buß, L. Merte, H. Wallander, J.-O. Krisponeit, T. Schmidt, E. Lundgren, J.I. Flege, and J. Falta Ultramicroscopy, 278 , (2025), 114243 DOI: 10.1016/j.ultramic.2025.114243 top 2024 Atomic vs. Sub-atomic layer deposition: impact of growth rate on the optical and structural properties of MoS2 and WS2 C. Tessarek, T. Grieb, F.F. Krause, C. Petersen, A. Karg, A. Hinz, N. Osterloh, C. Habben, F. Figge, J.-O. Krisponeit, T. Schmidt, J. Falta, A. Rosenauer, and M. Eickhoff 2D Materials 11 (2), (2024), 025031 DOI: 10.1088/2053-1583/ad3134 In situ Low-Energy Electron Microscopy of Chemical Waves on a Composite V-oxide Rh(110) Surface B. von Boehn, J.-O. Krisponeit, J. Falta, and R. Imbihl ChemPhysChem 25 (16), (2024), e202400186 DOI: 10.1002/cphc.202400186 top 2023 Low-energy electron microscopy intensity-voltage data – Factorization, sparse sampling and classification F. Masia, W. Langbein, S. Fischer, J.-O. Krisponeit, and J. Falta Journal of Microscopy 289 (2), (2023) DOI: 10.1111/jmi.13155 Oxygen Storage by Tin Oxide Monolayers on Pt3Sn(111) L.R. Merte, N. Braud, L. Buß, M.K. Bisbo, H.J. Wallander, J.-O. Krisponeit, J.I. Flege, B. Hammer, J. Falta, and E. Lundgren Journal of Physical Chemistry C, 127 (6), 2023, 2988-2994 DOI: 10.1021/acs.jpcc.2c09041 Cleaning and tailoring the Pt3Sn(111) surface for surface experiments N. Braud, L. Buß, E. Lundgren, L.R. Merte, H.J. Wallander, J.-O. Krisponeit, A. Locatelli, T.O. Mentes, M. Jugovac, J.I. Flege, and J. Falta Surface Science, 732 , (2023), 122081 DOI: 10.1016/j.susc.2023.122281 Erratum to „Complementary information on CdSe/ZnSe quantum dot local structure from extended x-ray absorption fine structures and diffraction anomalous fine structuremeasurements“ E. Piskorska-Hommel, V. Holý, O. Caha, A. Wolska, A. Gust, C. Kruse, H. Kröncke, J. Falta, and D. Hommel Journal of Alloys and Compounds, 949 , (2023), 169782 DOI: 10.1016/j.jallcom.2023.169782 Unraveling van der Waals epitaxy: A real-time in-situ study of MoSe2 growth on graphene/Ru(0001) L. Buß, N. Braud, M. Ewert, M. Jugovac, T.O. Mentes, A. Locatelli, J. Falta, and J.I. Flege Ultramicroscopy, 250 , (2023), 113749 DOI: 10.1016/j.ultramic.2023.113749 Preparation and stability of the hexagonal phase of samarium oxide on Ru(0001) E. Pozarowska, L. Pleines, , Ewert, M.J. Prieto, L.C. Tänase, L. de Souza Caldas, A. Tiwari, Th. Schmidt, J. Falta, E. Krasovskii, C. Morales, and J.I. Flege Ultramicroscopy, 250 , (2023), 113755 DOI: 10.1016/j.ultramic.2023.113755 Dynamic Behavior of Tin at Platinum Surfaces during Calatytic CO Oxidation H.J. Wallander, D. Gajdek, S. Albertin, G. Harlow, N. Braud, L. Buß, J.-O. Krisponeit, J.I. Flege, J. Falta, E. Lundgren, and L. Merte ACS Catalysis, 13 (24), (2023), 16158-16167 DOI: 10.1021/acscatal.3c04657 Growth and characterization of sputter-deposited Ga2O3-based memristive devices A. Baunthiyal, J.-O. Krisponeit, M. Schowalter, T. Mehrtens, A. Karg, A. Rosenauer, M. Eickhoff, and J. Falta Applied Physics Letters, 123 (21), (2023), 213504 pubs.aip.org/aip/apl/article/123/21/213504/2922373 DOI: 10.1063/5.0170354 Sputter-deposited ß-Ga2O3 Films With Al top electrodes for resistive random access memory technology A. Baunthiyal, J.-O. Krisponeit, A. Karg, S.M. Mahdian, M. Schowalter, T. Mehrtens, M. Eickhoff, A. Rosenauer, and J. Falta 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), (2023), 536-540 DOI: 10.1109/NMDC57951.2023.10343972 top 2022 Ordering of copper phthalocyanine films on functionalized Si(111) T. Schmidt, T. Wilkens, and J. Falta Surf. Sci. 725 , (2022) DOI: 10.1016/j.susc.2022.122127 Phase separation within Vanadium Oxide Islands under Reaction Conditions: Methanol Oxidation at Vanadium Oxide Films on Rh(111) B. von Boehn, A. Weißbach, J.-O. Krisponeit, J.I. Flege, J. Falta, L. Gregoratti, M. Amati, P. Zeller, and R. Imbihl Journal of Physical Chemistry C 126 (45 ) , (2022) DOI: 10.1021/acs.jpcc.2c04174 Enhanced epitaxial growth of Ga203 using an ultrathin SnO 2 layer A. Karg, M. Kracht, P. Vogt, A. Messow, N. Braud, J. Schörmann, M. Rohnke, J. Janek, J. Falta, and M. Eickhoff Journal of Applied Physics 132 (19), (2022) DOI: 10.1063/5.0127232 Growth Mechanism of Single-Domain Monolayer MoS 2 Nanosheets on Au(111) M. Ewert, L. Buß, J.V. Lauritsen, J. Falta, and J.I. Flege ACS Applied Nano Materials 5 (12), (2022) DOI: 10.1021/acsanm.2c03584 top 2021 Structural Transitions Driving Interface Pulses in Methanol Oxidation on Rh(110) and VOx/Rh(110): A LEEM Study B. von Boehn, J.-O. Krisponeit, J. Falta, and R. Imbihl Journal of Physical Chemistry C, 125, (2021), 22539–22546 DOI: 10.1021/acs.jpcc.1c06106 The Transition From MoS 2 Single-Layer to Bilayer Growth on the Au(111) Surface M. Ewert, L. Buß, N. Braud, A.K. Kundu, P.M. Sheverdyaeva, P. Moras, F. Genuzio, T.O. Mentes, A. Locatelli, J. Falta, and J.I. Flege Frontiers in Physics, 9 (2021), 654845 DOI: 10.3389/fphy.2021.654845 top 2020 Adsorption of sulfur on Si(111) Th. Schmidt, L. Buß, M. Ewert, G. Schönhoff, T. Wehling, and J. Falta Surf. Sci. 694, (2020), DOI: doi.org/10.1016/j.susc.2019.121561 DOI: 10.1016/j.susc.2019.121561 Massively Strained VO2 Thin Film Growth on RuO2 S. Fischer, J.-O. Krisponeit, M. Foerster, L. Aballe, J. Falta, and J. I. Flege Cryst. Growth Des. 20(4) (2020), 2734-2741, DOI: 10.1021/acs.cgd.0c0012 DOI: 10.1021/acs.cgd.0c00120 Reaction dynamics of metal/oxide catalysts: Methanol oxidation at vanadium oxide films on Rh(111) from UHV to 10^−2 mbar B.von Boehn, Ch. Penschke, X. Li, J. Paier, J. Sauer, J.-O. Krisponeit, J.I. Flege, J. Falta, H. Marchetto, T. Franz, G. Lilienkamp, and R. Imbihl Journal of Catalysis 385 , (2020), 255-264 , DOI: 10.1016/j.jcat.2020.03.016 Switching friction at a manganite surface using electric fields H. Schmidt, J.-O. Krisponeit, N. Weber, K. Samwer, and C.A. Volkert Phys. Rev. Materials 4 (11), (2020), 113610 DOI: 10.1103/PhysRevMaterials.4.113610 The morphology of VO2/TiO2(001): terraces, facets and cracks J.-O. Krisponeit, S. Fischer, S. Esser, V. Moshnyaga, Th. Schmidt, L.F.J. Piper, J.I. Flege, and J. Falta Scientific Reports 10 (1), (2020),1-8 DOI: 10.1038/s41598-020-78584-9 top 2019 Nucleation, morphology, and structure of sub-nm thin ceria islands on Rh(111) J.I. Flege, J. Höcker, J.T. Sadowski, S.D. Senanayake, and J. Falta Surface and Interface Analysis 51 (1), (2019), 110-114 DOI: 10.1002/sia.6567 Growth and structure of singly oriented single-layer tungsten disulfide on Au(111) L. Bignardi, D. Lizzit, H. Bana, E. Travaglia, P. Lacovig, Ch. E. Sanders, M. Dendzik, M. Michiardi, M. Bianchi, M. Ewert, L. Buß, J. Falta, J.I. Flege, A. Baraldi, R. Larciprete, P. Hofmann, and S. Lizzit Phys. Rev. Mat. 3 (1), (2019), 014003 DOI: 10.1103/PhysRevMaterials.3.014003 Wafer-Scale Synthesis of Graphene on Sapphire: Toward Fab-Compatible Graphene N. Mishra, S. Forti, F. Fabbri, L. Martini, C. McAleese, B.R. Conran, P.R. Whelan, A. Shivayogimath, B.S. Jessen, L. Buß, J. Falta, I. Aliaj, S. Roddaro, J.I. Flege, P. Bøggild, K.B.K. Teo, and C. Coletti Small, (2019), DOI: 10.1002/smll.201904960 DOI: 10.1002/smll.201904906 Dynamics of the interaction between ceria and platinum during redox processes P. Luches, G. Gasperi, M. Sauerbrey, S. Valeri, J. Falta, and J.I. Flege Frontiers in Chemistry 7 , (2019), DOI: 10.3389/fchem.2019.00057 DOI: 10.3389/fchem.2019.00057 Growth of Epitaxial 3,4,9,10-Perylene Tetracarboxylic Dianhydride on Bi-Terminated Silicon T. Schmidt, C. Ahrens, J.I. Flege, C. Jaye, D.A. Fischer, and J. Falta Journal of Physical Chemistry C 123 (12), (2019) DOI: 10.1021/acs.jpcc.8b10396 High surface area SiC(O)-based ceramic by pyrolysis of poly (ethylene glycol) methacrylate-modified polycarbosilane S. Kaur, S. Fischer, J. Falta, K. Rezwan, and M. Wilhelm Journal of the American Ceramic Society 102 (12), (2019), DOI: 10.1111/jace.16647 Quasicrystals and their Approximants in 2D Ternary Oxide s S. Förster, S. Schenk, E.M. Zollner, O. Krahn, Ch.-T. Chiang, F.O. Schumann, A. Bayat, K.-M. Schindler, M. Trautmann, R. Hammer, K. Meinel, W.A. Adeagbo, W. Hergert, J.I. Flege, J. Falta, M. Ellguth, Ch. Tusche, M. DeBoissieu, M. Muntwiler, T. Greber, and W. Widdra phys. stat. sol. (b), (2019), DOI: 10.1002/pssb.201900624 Layer-by-Layer Resistive Switching: Multistate Functionality due to Electric-Field-Induced Healing of Dead Layers J.-O. Krisponeit, B. Damaschke, V. Moshnyaga, and K. Samwer Phys. Rev. Lett. 122 , (2019), 136801 DOI: 10.1103/PhysRevLett.122.136801 top 2018 In situ studies of oxide nucleation, growth, and transformation using slow electrons J. I. Flege and D. C. Grinter Prog. Surf. Sci., in press, available online (2018) DOI: 10.1016/j.progsurf.2018.02.001 Thermal reduction of ceria nanostructures on rhodium(111) and re-oxidation by CO2 A. Schaefer, B. Hagmann, J. Höcker, U. Hejral, J.I. Flege, and J. Gustafson Phys. Chem. Chem. Phys. 20 (29), (2018), 19447-19457 DOI: 10.1039/C8CP01505H top 2017 Cerium oxide epitaxial nanostructures on Pt(111): growth, morphology and structure M. Sauerbrey, G. Gasperi, P. Luches, J. Falta, S. Valeri, and J.I. Flege Top. Catal., 60 (2017) DOI: 10.1007/s11244-016-0716-6 Growth and decay of a two-dimensional oxide quasicrystal: High-temperature in situ microscopy S. Förster, J.I. Flege, E.M. Zollner, F.O. Schumann, R. Hammer, A. Bayat, K.-M. Schindler, J. Falta, and W. Widdra Ann. Phys. (Berlin), 529 , (2017) DOI: 10.1002/andp. 201600250 Growth and structure of ultrathin praseodymium oxide layers on Ruthenium(0001) J. Höcker, J.-O. Krisponeit, J. Cambeis, A. Zakharov, Y. Niu, G. Wei, L. Colombi Ciacchi, J. Falta, A. Schaefer, and J.I. Flege Phys. Chem. Chem. Phys. 19 , DOI: 10.1039/C6CP06853G Ga and In adsorption on Si(112): adsorption sites and superstructure M. Speckmann, Th. Schmidt, J. I. Flege, J. Höcker, I. Heidmann, and J. Falta Phys. Rev. B 95 , (2017), 125441 DOI: 10.1103/PhysRevB.95.125441 The cubic-to-hexagonal phase transition of cerium oxide particles: dynamics and structure J. Höcker, J.-O. Krisponeit, Th. Schmidt, J. Falta, and J. I. Flege Nanoscale 9 , (2017), 9352 DOI: 10.1039/C6NR09760J Nanoscale analysis of oxidation state and surface termination of praseodymium oxide ultrathin films on ruthenium(0001) J. I. Flege, J.-O. Krisponeit, J. Höcker, M. Hoppe, Y. Niu, A. Zakharov, A. Schaefer, E. E. Krasovskii, and J. Falta Ultramicroscopy 183 , (2017), 61 DOI: 10.1016/j.ultramic.2017.05.007 Exploiting micro-scale structural and chemical observations in real time for understanding chemical conversion: LEEM/PEEM studies over CeO x -Cu(111) T. Duchoň, J. Hackl, J. Höcker, K. Veltruská, V. Matolín, J. Falta, S. Cramm, S. Nemšák, C. M. Schneider, J. I. Flege, and S. D. Senanayake Ultramicroscopy 183 , (2017), 84 DOI: 10.1016/j.ultramic.2017.05.003 top 2016 Mazes and meso-islands: Impact of Ag preadsorption on Ge growth on Si(111) Th. Schmidt, M. Speckmann, J. I. Flege, K. Müller-Caspary, I. Heidmann, A. Kubelka-Lange, T. O. Menteş, M. Á. Niño, A. Locatelli, A. Rosenauer, and J. Falta Phys. Rev. B 94 , (2016), 235410 DOI: 10.1103/PhysRevB.94.235410 Carrier collection losses in interface passivated amorphous silicon thin-film solar cells A. Neumüller, S. Bereznev, M. Ewert, O. Volobujeva, O. Sergeev, J. Falta, M. Vehse, and C. Agert Appl. Phys. Lett., 109 (4), (2016), 043903 DOI: 10.1063/1.4959995 Ultrasmooth Ru(0001) Films as Templates for Ceria Nanoarchitectures M. Sauerbrey, J. Höcker, M. Wellbrock, M. Schowalter, J.-O. Krisponeit, K. Müller-Caspary, A. Rosenauer, G. Wei, L. Colombi Ciacchi, J. Falta, and J.I. Flege Crystal Growth & Design 16 (8), (2016), 4216-4224 DOI: 10.1021/acs.cgd.6b00192 Growth and characterization of epitaxially stabilized ceria(001) nanostructures on Ru(0001) J.I. Flege, J. Höcker, B. Kaemena, T.O. Mentes, A. Sala, A. Locatelli, S. Gangopadhyay, J.T. Sadowski, S.D. Senanayake, and J. Falta Nanoscale 8 , (2016), 10849-10856 DOI: 10.1039/C6NR02393B In situ growth, structure, and real-time chemical reactivity of well-defined CeO x -Ru(0001) model surfaces D.C. Grinter, S.D. Senanayake, and J.I. Flege* Appl. Catal., B 197 , (2016), 286 DOI: 10.1016/j.apcatb.2016.02.043 I sotropic thin PTCDA films on GaN(0001) Ch. Ahrens, J.I. Flege, C. Jaye, D.A. Fischer, Th. Schmidt, and J. Falta J. Phys.: Condens. Matter 28, (2016), 475003 DOI: 10.1088/0953-8984/28/47/475003 Morphology and chemical composition of cobalt germanide islands on Ge(001) M. Ewert, Th. Schmidt, J.I. Flege, I. Heidmann, T. Grzela, W. Klesse, M. Foerster, L. Aballe, T. Schroeder, and J. Falta Nanotechnology , 27 (32), (2016) , 325705 DOI: 10.1088/0957-4484/27/32/325705 Controlling Heteroepitaxy by Oxygen Chemical Potential: Exclusive Growth of (100) Oriented Ceria Nanostructures on Cu(111) J. Höcker, T. Duchoň, K. Veltruská, V. Matolín, J. Falta, S.D. Senanayake, and J.I. Flege J. Phys. Chem. C 2016, 120, 9, 4895–4901 , DOI: 10.1021/acs.jpcc.5b11066 (selected for journal cover) Role of RuO 2 (100) in surface oxidation and CO oxidation catalysis on Ru(0001) J.I. Flege, J. Lachnitt, D. Mazur, P. Sutter, and J. Falta Phys. Chem. Chem. Phys. 18, (2016), 213 DOI: 10.1039/C5CP05807D top 2015 Unraveling the dynamic nanoscale reducibility (Ce4+ → Ce3+) of CeOx-Ru in hydrogen activation J. Höcker, T.O. Menteş, A. Sala, A. Locatelli, Th. Schmidt, J. Falta, S.D. Senanayake, and J.I. Flege Adv. Mater. Interfaces 2, (2015), 1500314 (featured on journal inside cover) DOI: 10.1002/admi.201500314 Nanoscale origin of mesoscale roughening: real-time tracking and identification of three ruthenium oxide phases in ruthenium oxidation J.I. Flege, B. Herd, J. Goritzka, H. Over, E.E. Krasovskii, and J. Falta ACS Nano 9, (2015), 8468 DOI: 10.1021/acsnano.5b03393 Growth, structure, and stability of the high-index TbOx(112) surface on Cu(111) J. Höcker, W. Cartas, A. Schaefer, M. Bäumer, J. Weaver, J. Falta, and J.I. Flege J. Phys. Chem. C 119, (2015), 14175 DOI: 10.1021/acs.jpcc.5b02463 Insights into the gas phase oxidation of Ru(0001) on the mesoscopic scale using molecular oxygen J.C. Goritzka, B. Herd, P.P.T. Krause, J. Falta, J.I. Flege, and H. Over Phys. Chem. Chem. Phys. 17, (2015), 13895 DOI: 10.1039/C4CP06010E Oxidation state analysis of ceria by XPS A. Allahgholi, J.I. Flege, S. Thieß, W. Drube, and J. Falta ChemPhysChem 16 (2015), 1083 DOI: 10.1002/cphc.201402729 Surface resonances in electron reflection from overlayers E.E. Krasovskii, J. Höcker, J. Falta, and J.I. Flege J. Phys.: Condens. Matter 27, (2015), 035501 DOI: 10.1088/0953-8984/27/3/035501 Growth and evolution of nickel germanide nanostructures on Ge(001) T. Grzela, G. Capellini, W. Koczorowski, M.A. Schubert, R. Czajka, N.J. Curson, I. Heidmann, Th. Schmidt, J. Falta, and T. Schröder Nanotechnology 26, (2015), 385701 DOI: 10.1088/0957-4484/26/38/385701 Oxidation-State Analysis of Ceria by X-ray Photoelectron Spectroscopy A. Allahgholi, J.I. Flege, S. Thieß, W. Drube, and J. Falta ChemPhysChem, 16, (2015), 1083-1091 DOI: 10.1002/cphc.201402729 The electronic structure of homogeneous ferromagnetic (Ga, Mn)N epitaxial films E. Piskorska-Hommel, M.J. Winiarski, G. Kunert, I.N. Demchenko, O.D. Roshchupkina, J. Grenzer, J. Falta, D. Hommel, and V. Holý Journal of Applied Physics, 117 (6), (2015) DOI: 10.1063/1.4907583 top 2014 Surface oxidation of GaN(0001): Nitrogen plasma-assisted cleaning for ultrahigh vacuum applications S. Gangopadhyay, Th. Schmidt, C. Kruse, S. Figge, D. Hommel, and J. Falta Journal of Vacuum Science & Technology A, 32 (5), (2014) DOI: 10.1116/1.4886956 Intensity-voltage low-energy electron microscopy for functional materials characterization J.I. Flege and E.E. Krasovskii Physica Status Solidi – Rapid Research Letters, 8 (6), (2014), 463-677 DOI : 10.1002/pssr.201409102 Epitaxial, well-ordered ceria/lanthana high-k gate dielectrics on silicon J.I. Flege, B. Kaemena, Th. Schmidt, and J. Falta Journal of Vacuum Science & Technology B, 32 (3), (2014) DOI: 10.1116/1.4876122 Ultrathin, epitaxial cerium dioxide on silicon J.I. Flege, B. Kaemena, J. Höcker, F. Bertram, J. Wollschläger, Th. Schmidt, and J. Falta Applied Physics Letters, 104 (13), (2014) DOI: 10.1063/1.4870585 Influence of a low-temperature capping on the crystalline structure and morphology of InGaN quantum dot structures B. Krause, B. Miljevic, T. Aschenbrenner, E. Piskorska-Hommel, C. Tessarek, M. Barchuk, G. Buth, R.D. Tchana, S. Figge, J. Gutowski, D. Hänschke, J. Kalden, T. Laurus, S. Lazarev, R. Magalhaes-Paniago, K. Sebald, A. Wolska, D. Hommel, J. Falta, V. Holy, and T. Baumbach Journal of Alloys and Compounds, 585, (2014) 585-572 DOI: 10.1016/j.jallcom.2013.09.005 top 2013 Surface evolution of 4H-SiC(0001) during in-situ surface preparation and its influence on graphene properties J. Hassan, A. Meyer, S. Cakmakyapan, O. Kazar, J.I. Flege, J. Falta, E. Ozbay, and E. Janzén Materials Science Forum, 740-742, (2013) 157-160 DOI: 10.4028/www.scientific.net/MSF.717-720.605 Ytterbium Intercalation of Epitaxial Graphene Grown on Si-Face SiC S. Watcharinyanon, L.I. Johansson, C. Xia, J.I. Flege, A. Meyer, J. Falta, and C. Virojanadara Graphene, 2, (2013) 66-73 DOI: 10.4236/graphene.2013.22010 Origin of chemical contrast in low-energy electron reflectivity of correlated multivalent oxides: The case of ceria J.I. Flege, B. Kaemena, A. Meyer, J. Falta, S.D. Senanayake, J.T. Sadowski, R.D. Eithiraj, and E.E. Krasovskii Physical Review B, 88 (23), (2013) DOI: 10.1103/PhysRevB.88.235428 Al-induced faceting of Si(113) C. Klein, I. Heidmann, T. Nabbefeld, M. Speckmann, Th. Schmidt, Frank-J. Meyer zu Heringsdorf, J. Falta, and M. Horn-von Hoegen Surface Science, 618, (2013) 109-114 DOI: 10.1016/j.susc.2013.08.007 Spatial correlation of photo-induced and thermionic electron emission from low work function diamond films N. Neugebohrn, T. Sun, Franz A.M. Koeck, Gary G. Hembree, Robert J. Nemanich, Th. Schmidt, and J. Falta Diamond and Related Materials, 40, (2013) 12-16 DOI: 10.1016/j.diamond.2013.09.009 Forschendes Lernen im Bachelor-Walpflichtfach Festkörperphysik – Ein Pilotprojekt am Fachbereich Physik/Elektrotechnik Th. Schmidt, K. Sebald, and J. Gutowski in: Forschendes Lernen als Profilmerkmal einer Universität, L. Huber and M. Kröger (eds.) Universitätsverlag Webler, Bielefeld, 2013, ISBN 978-3-937026-83-1 Link Growth mode and oxidation state analysis of individual cerium oxide islands on Ru(0001) J.I. Flege, B. Kaemena, S.D. Senanayake, J. Höcker, J.T. Sadowski, and J. Falta Ultramicroscopy, 130, (2013) 87-93 DOI: 10.1016/j.ultramic.2013.04.007 Colloidally prepared platinum nanoparticles deposited on iron oxide studied by XAFS E. Piskorska-Hommel, D. Arndt, T. Wilkens, J. Falta, and M. Bäumer 15th International Conference on X-ray Absorption Fine Structure (XAFS15) Journal of Physics, Conference Series, 430, (2013) DOI: 10.1088/1742-6596/430/1/012058 Growth and morphology of Ceria on Ruthenium (0001) B. Kaemena, S.D. Senanayake, A. Meyer, J.T. Sadowski, J. Falta, and J.I. Flege Journal of Physical Chemistry C, 117 (1), (2013) 221-232 DOI: 10.1021/jp3081782 top 2012 Control of epitaxial graphene thickness on 4H-SiC(0001) and buffer layer removal through hydrogen intercalation J. Hassan, C. Virojanadara, A. Meyer, I.G. Ivanov, J.I. Flege, S. Watcharinyanon, J. Falta, L.I. Johansson, and E. Janzén Materials Science Forum, 717-720, (2012) 605-608 DOI: 10.4028/www.scientific.net/MSF.717-720.605 Nanopattering in CoOx/Cu(111): A new type of surface reconstruction and enhancement of catalytic activity S.D. Senanayake, J.T. Sadowski, and J. Evans Journal of Physical Chemistry Letters, 3 (7), (2012) 829-843 DOI: 10.1021/jz300159p Complementary information in CdSe/ZnSe quantum dot local structure from extended X-ray absorption fine structure and diffraction anomalous fine structure measurements. Piskorska-Hommel, V. Holý, O. Caha, A. Wolska, A. Gust, C. Kruse, H. Kröncke, J. Falta, and D. Hommel Journal of Alloys and Copounds, 523, (2012) 155-160 DOI: 10.1016/j.jallcom.2012.01.133 top 2011 Silicate-free growth of high-quality ultrathin cerium oxxide films on Si(111) J.I. Flege, B. Kaemena, S. Gevers, F. Bertram, T. Wilkens, D. Bruns, J. Bätjer, Th. Schmidt, J. Wollschläger, and J. Falta Phys. Rev. B, 84 (2011) 235418 DOI: 10.1103/PhysRevB.84.235418 Self-limited oxide formation in Ni(111) oxidation J.I. Flege, A. Meyer, J. Falta, and E. E. Krasovskii Phys. Rev. B, 84 (2011) 115441 DOI: 10.1103/PhysRevB.84.115441 In adsorption on Si(112) and its impact on Ge growth M. Speckmann, Th. Schmidt, J.I. Flege, and J. Falta IMB J. Res. Dev., 55 (2011) 11 DOI: 10.1147/JRD.2011.2158763 Cleaning and growth morphology of GaN and InGaN surfaces J. Falta, Th. Schmidt, S. Gangopadhyay, Ch. Schulz, S. Kuhr, N. Berner, J.I. Flege, A. Pretorius, A. Rosenauer, K. Sebald, H. Lohmeyer, J. Gutowski, S. Figge, T. Yamaguchi, and D. Hommel Phys. Stat. Sol. B, 248 (2011) 1800-1809 DOI: 10.1002/pssb.201046574 Complex surface phases of Sb on Si(113): Combining x-ray standing waves and density functional theory M. Siebert, Th. Schmidt, J.I. Flege, and J. Falta in: The x-ray standing wave technique: principles and applications, Series on Synchrotron Radiation Techniques and Applications, Vol. 7, J. Zegenhagen and A. Kazimirov (eds.) World Scientific (Singapore) DOI: 10.1142/9789812779014_0020 Photon stimulated desorption J.I. Flege, Th. Schmidt, A. Hille, J. Falta, and G. Materlik in: The x-ray standing wave technique: principles and applications, Series on Synchrotron Radiation Techniques and Applications, Vol. 7, J. Zegenhagen and A. Kazimirov (eds.) World Scientific (Singapore) DOI: 10.1142/9789812779014_0022 In-situ oxidation of ultrathin silver films on Ni(111) A. Meyer, J. I. Flege, S. D. Senanayake, B. Kaemena, R. E. Rettew, F. M. Alamgir, and J. Falta IBM J. Res. Dev., 55 (2011) 8 DOI: 10.1147/JRD.2011.2157262 Mg and Si dopant incorporation and segregation in GaN Th. Schmidt, M. Siebert, J.I. Flege, S. Figge, S. Gangopadhyay, A. Pretorius, T.-L. Lee, J. Zegenhagen, L. Gregoratti, A. Barinov, A. Rosenauer, D. Hommel, and J. Falta Phys. Stat. Sol. B, 248 (2011) 1810-1821 DOI: 10.1002/pssb.201046531 Ultra-thin high-quality silicon nitride films on Si(111) J. Falta, Th. Schmidt, S. Gangopadhyay, T. Clausen, O. Brunke, J.I. Flege, S. Heun, S. Bernstorff, L. Gregoratti, and M. Kiskinova Europhys. Lett., 94 (2011) 16003 DOI: 10.1209/0295-5075/94/16003 Lost in reciprocal space? Determination of the scattering condition in spot profile analysis low-energy electron diffraction C. Klein, T. Nabbefeld, H. Hattab, D. Meyer, G. Jnawali, M. Kammler, F.J. Meyer zu Heringdorf, A. Golla-Franz, B.H. Müller, Th. Schmidt, M. Henzler, and M. Horn-von Hoegen Rev. Sci. Instr., 82 (2011) 035111 DOI: 10.1063/1.3554305 Cleaning of GaN(-2110) surfaces Ch. Schulz, S. Kuhr, H. Geffers, Th. Schmidt, J.I. Flege, T. Aschenbrenner, D. Hommel, and J. Falta J. Vac. Sci. Technol. A, 29 (2011) 011013 DOI: 10.1116/1.3520117 Interactions of oxygen and ethylene with submonolayer Ag films supported on Ni(111) R.E. Rettew, A. Meyer, S.D. Senanayake, T.-L. Chen, C. Petersburg, J.I. Flege, J. Falta, and F.M. Alamgir Phys. Chem. Chem. Phys., 13 (2011) 11034-11044 DOI: 10.1039/C1CP20357F Role of Palladium in Iron Based Fischer-Tropsch Catalysts Prepared by Flame Spray Pyrolysis M. Minnermann, S. Pokhrel, K. Thiel, R. Henkel, J. Birkenstock, T. Laurus, A. Zargham, J.I. Flege, V. Zielasek, E. Piskorska-Hommel, J. Falta, L. Mädler, and M. Bäumer J. Phys. Chem. C, 115 (2011) 1302-1310 DOI: 10.1021/jp106860d Photoemission study of praseodymia in its highest oxidation state: The necessity of in situ plasma treatment A. Schaefer, S. Gevers, V. Zielasek, T. Schroeder, J. Falta, J. Wollschläger, and M. Bäumer The Journal of Chemical Physics, 134 (2011) 054701-1-054701-7 DOI: 10.1063/1.3516953 top 2010 Improved epitaxy of ultrathin praseodymia films on chlorine passivated Si(111) reducing silicate interface formation S. Gevers, J.I. Flege, B. Kaemena, D. Bruns, T. Weisemöller, J. Falta, and J. Wollschläger Appl. Phys. Lett., 97 (2010) 242901 DOI: 10.1063/1.3525175 J. Falta and Th. Schmidt in ”Handbook of Nanophysics Functional Nanomaterials” K. D. Sattler, Edt.CRC Press, Boca Raton, Florida, USA (2010) ISBN 978-1-4200-7552-6 Forschung mit Synchrotronstrahlung J. Falta and Th. Möller, Edts. Vieweg + Teubner Verlag Wiesbaden (2010) ISBN 978-3-519-00357-1 Ge Growth on Partially and Entirely Ag Covered Si(111) Th. Schmidt, M. Speckmann, J. Falta, T.O. Mentes, M. A. Nino, and A. Locatelli e-J. Surf. Sci. Nanotech., Vol. 8 (2010) 221-226 DOI: 10.1380/ejssnt.2010.221 On revealing the vertical structure of nanoparticle films with elemental resolution: A total external reflection X-ray standing waves study A. Zargham, Th. Schmidt, J.I. Flege, M. Sauerbrey, R. Hildebrand, S. Röhe, M. Bäumer, and J. Falta Nucl. Instr. Meth. Phys. Res. B, 268 (2010) 325-328 DOI: 10.1016/j.nimb.2009.09.029 Ultrathin silver films on Ni(111) A. Meyer, J.I. Flege, R.E. Rettew, S.D. Senanayake, Th. Schmidt, F.M. Alamgir, and J. Falta Phys. Rev. B, 82 (2010) 085424 DOI: 10.1103/PhysRevB.82.085424 top 2009 Silver: a novel growth catalyst for Ge nanoislands on Si(113) M. Speckmann, Th. Schmidt, A. Locatelli, T.O. Mentes, M.A. Niño, and J. Falta Phys. Status Solidi RRL, 3 (2009) 305 DOI: 10.1002/pssr.200903294 Local structure of uncapped and capped InGaN/GaN quantum dots E. Piskorska-Hommel, Th. Schmidt, M. Siebert, T. Yamaguchi, D. Hommel, J. Falta, and J.O. Cross J. Synchrotron Rad., 16 (2009) 494 DOI: 10.1107/S0909049509012345 Growth of praseodymium oxide on Si(111) under oxygen-deficient conditions A. Schaefer, V. Zielasek, Th. Schmidt, A. Sandell, M. Schowalter, O. Seifarth, L.E. Walle, Ch. Schulz, J. Wollschläger, T. Schroeder, A. Rosenauer, J. Falta, and M. Bäumer Phys. Rev. B, 80 (2009) 045414 DOI: 10.1103/PhysRevB.80.045414 Nanoscale analysis of Ru(0001) oxidation using low-energy and photoemission electron microscopy J.I. Flege and P. Sutter J. Phys.: Condens. Matter, 21 (2009) 314018 DOI: 10.1088/0953-8984/21/31/314018 Temperature dependent low energy electron microscopy study of Ge island growth on bare and Ga terminated Si(112) M. Speckmann, Th. Schmidt, J.I. Flege, J.T. Sadowski, P. Sutter, and J. Falta J. Phys.: Condens. Matter, 21 (2009), 314020 DOI: 10.1088/0953-8984/21/31/314020 Atomic structure of the non-polar GaN(2110) surface by cross-sectional scanning tunneling microscopy D. Krüger, S. Kuhr, Th. Schmidt, D. Hommel, and J. Falta phys. stat. sol. RRL 3, 4 (2009) 91 DOI: 10.1002/pssr.200903041 Low-temperature growth of InGaN/GaN nano-islands investigated by grazing-incidence X-ray diffraction Th. Schmidt, J.I. Flege, M. Siebert, S. Figge, T. Yamaguchi, D. Hommel, and J. Falta phys. stat. sol. (c), 6 (2009) S602 DOI: 10.1002/pssc.200880979 From nanoislands to nanowires: Growth of germanium on gallium-terminated silicon surfaces Th. Schmidt, J.I. Flege, M. Speckmann, T. Clausen, S. Gangopadhyay, A. Locatelli, T.O. Mentes, S. Heun, F.Z. Guo, P. Sutter, and J. Falta phys. stat. sol. (a), 206 (2009) 1718 DOI: 10.1002/pssa.200881602 Oxide removal from GaN(0001) Ch. Schulz, Th. Schmidt, J.I. Flege, N. Berner, Ch. Tessarek, D. Hommel, and J. Falta phys. stat. sol. (c), 6 (2009) S305 DOI: 10.1002/pssc.200880845 top 2008 Epitaxial graphene on ruthenium P. Sutter, J. I. Flege, and E. Sutter Nature Mater., 7 (2008) 406 In situ structural imaging of CO oxidation catalysis on oxidized Rh(111) J. I. Flege and P. Sutter Phys. Rev. B, 78 (2008) 153402 DOI: 10.1103/PhysRevB.78.153402 Atomic structure of chlorinated Si(113) surfaces J.I. Flege, Th. Schmidt, M. Siebert, G. Materlik, and J. Falta Phys. Rev. B, 78 (2008) 085317 DOI: 10.1103/PhysRevB.78.085317 Structural imaging of surface oxidation and oxidation catalysis on Ru(0001) J. I. Flege, J. Hrbek, and P. Sutter Phys. Rev. B, 78 (2008) 165407 DOI: 10.1103/PhysRevB.78.165407 Plasma modification of CoPt3 nanoparticle arrays - a route to catalytic coatings of surfaces B. Gehl, J.I. Flege, V. Aleksandrovic, Th. Schmidt, A. Kornowski, S. Bernstorff, J. Falta, H. Weller, and M. Bäumer J. Vac. Sci. Technol. A 26(4) (2008) 908 DOI: 10.1116/1.2936222 Structural and chemical effects of plasma treatment on close-packed colloidal nanoparticle layers B. Gehl, A. Frömsdorf, V. Aleksandrovic, Th. Schmidt, A. Pretorius, J.I. Flege, S. Bernstorff, A. Rosenauer, J. Falta, H. Weller, and M. Bäumer Adv. Funct. Mater., 18 (2008) 2398-2410 DOI: 10.1002/adfm.200800274 top 2007 InGaN selfassembled quantum dots investigated by X-ray diffraction-anomalous-fine structure technique E. Piskorska, V. Holý, M. Siebert, H. Renevier, Th. Schmidt, J. Falta, T. Yamaguchi, and D. Hommel AIP Conf. Proc., 893(1) (2007) 79 DOI: 10.1063/1.2729779 Adsorbate induced self-ordering of germanium nanoislands on Si(113) Th. Schmidt, T. Clausen, J.I. Flege, S. Gangopadhyay, A. Locatelli, T.-O. Mentes, F.Z. Guo, S. Heun, and J. Falta New J. Phys., 9 (2007) 392 DOI: 10.1088/1367-2630/9/10/392 Formation and morphology of InGaN nano-islands on GaN(0001) S. Gangopadhyay, Th. Schmidt, S. Einfeldt, T. Yamaguchi, D. Hommel, and J. Falta J. Vac. Sci. Techn. B, 25 (2007) 791-795 DOI: 10.1116/1.2734156 Alignment of Ge nanoislands on Si(111) by Ga-induced substrate self-patterning Th. Schmidt, J.I. Flege, S. Gangopadhyay, T. Clausen, A. Locatelli, S. Heun, and J. Falta Phys. Rev. Lett. 98 (2007) 066104-1; Virt.-J. Nanoscale Sci. Techn. 15 (2007) DOI: 10.1103/PhysRevLett.98.066104 top 2006 Diffraction anomalous fine structure investigation of InGaN quantum dots E. Piskorska, V. Holý, M. Siebert, B. Krause, T.H. Metzger, Th. Schmidt, J. Falta, T. Yamaguchi, and D. Hommel phys. stat. sol (c), 3 (2006) 1662-1666 DOI: 10.1002/pssc.200565443 Growth and formation of InGaN and GaN nanostructures studied by STM S. Gangopadhyay, Th. Schmidt, S. Einfeldt, T. Yamaguchi, D. Hommel, and J. Falta e-J. Surf. Sci. Nanotech., 4 (2006) 90-95 DOI: 10.1380/ejssnt.2006.90 A novel approach for the growth of InGaN quantum dots T. Yamaguchi, K. Sebald, H. Lohmeyer, S. Gangopadhyay, J. Falta, J. Gutowski, S. Figge, and D. Hommel phys. stat. sol. (c), 3(11) (2006) 3955-3958 DOI: 10.1002/pssc.200671592 X-ray standing wave investigations of Si dopant incorporation in GaN M. Siebert, Th. Schmidt, J.I. Flege, J. Zegenhagen, T.-L. Lee, S. Figge, D. Hommel, and J. Falta Mater. Res. Soc. Symp. Proc. Vol., 892 (2006) FF03-03.1 DOI: 10.1557/PROC-0892-FF03-03 Surface Morphology and Island Shape of MOVPE Grown InGaN Nano-Island Ensembles Studied by STM S. Gangopadhyay, Th. Schmidt, S. Einfeldt, T. Yamaguchi, D. Hommel, and J. Falta Mater. Res. Soc. Symp. Proc. Vol., 892 (2006) FF32-05.1 DOI: 10.1557/PROC-0892-FF32-05 Two to three dimensional transition of InGaN layer and influences of GaN overgrowth T. Yamaguchi, S. Einfeldt, S. Gangopadhyay, J. Falta, and D. Hommel phys. stat. sol. (c), 3 (2006) 1396-1399 DOI: 10.1002/pssc.200565349 Structural investigations of GaN films with x-ray standing waves M. Siebert, Th. Schmidt, J.I. Flege, S. Einfeldt, S. Figge, D. Hommel, and J. Falta phys. stat. sol. (c), 3(6) (2006) 1729 DOI: 10.1002/pssc.200565440 Growth and morphology of MOVPE grown InGaN/GaN islands S. Gangopadhyay, Th. Schmidt, S. Einfeldt, T. Yamaguchi, D. Hommel, and J. Falta phys. stat. sol. (c), 3(6) (2006) 1557 DOI: 10.1002/pssc.200565438 N-plasma assisted MBE grown GaN on Si(111) S. Gangopadhyay, Th. Schmidt, and J. Falta phys. stat. sol. (c), 243(7) (2006) 1416 DOI: 10.1002/pssb.200565439 Surface segregation of Si and Mg dopants in MOVPE grown GaN films revealed by x-ray photoemission spectro-microscopy Th. Schmidt, M. Siebert, J.I. Flege, S. Gangopadhyay, A. Pretorius, S. Figge, L. Gregoratti, A. Barinov, D. Hommel, and J. Falta phys. stat. sol. (c), 3(6) (2006) 1725 DOI: 10.1002/pssc.200565437 Sb surfactant-mediated epitaxy of Ge on Si(113) studied by AFM, SEM and GIXRD T. Clausen, J.I. Flege, Th. Schmidt, and J. Falta Mater. Res. Soc. Symp. Proc. Vol. 901E (2006) Ra12-06.1 DOI: 10.1557/PROC-0901-Ra12-06 Temperature dependent low energy electron microscopy study of Ge growth on Si(113) T. Clausen, Th. Schmidt, J.I. Flege, A. Locatelli, S. Heun, T.O. Mentes, F. Guo, and J. Falta Appl. Surf. Sci. 252 (2006) 5321-5325 DOI: 10.1016/j.apsusc.2005.12.021 Spectro-microscopy of Si doped GaN films Th. Schmidt, M. Siebert, A. Pretorius, S. Gangopadhyay, S. Figge, J.I. Flege, L. Gregoratti, A. Barinov, D. Hommel, and J. Falta Nucl. Instr. Meth. B, 246 (2006) 79 DOI: https://doi.org/10.1016/j.nimb.2005.12.018 Less strain energy despite fewer misfit dislocations: The impact of ordering Th. Schmidt, R. Kröger, J.I. Flege, T. Clausen, J. Falta, A. Janzen, P. Zahl, P. Kury, M. Kammler, and M. Horn-von Hoegen Phys. Rev. Lett. 96 (2006) 066101 DOI: 10.1103/PhysRevLett.96.066101 Grazing-incidence small-angle x-ray scattering investigation of spin-coated CoPt3 nanoparticle films J.I. Flege, Th. Schmidt, V. Aleksandrovic, G. Alexe, T. Clausen, B. Gehl, A. Kornowski, S. Bernstorff, H. Weller, and J. Falta Nucl. Instr. Meth. B 246 (2006) 25 DOI: 10.1016/j.nimb.2005.12.013 Initial stage of silicon nitride nucleation on Si(111) by rf plasma-assisted growth S. Gangopadhyay, Th. Schmidt, and J. Falta e-J. Surf. Sci. Nanotech., 4 (2006) 84 DOI: 10.1380/ejssnt.2006.84 top 2005 Real-time low-energy electron microscopy study of Ga adsorption and facet array formation on Si(113) T. Clausen, Th. Schmidt, J.I. Flege, J. Falta, A. Locatelli, T.O. Mentes, S.Heun, and F.Guo e-J. Surf. Sci. Nanotech., 3 (2005) 379-383 DOI: 10.1380/ejssnt.2005.379 Self-organized 2D nanopatterns after low-coverage Ga adsorption on Si(111) Th. Schmidt, J.I. Flege, S. Gangopadhyay, T. Clausen, A. Locatelli, S. Heun, and J. Falta New J. Phys., 7 (2005) 193 DOI: 10.1088/1367-2630/7/1/193 Ordering mechanism of stacked CdSe/ZnSSe quantum dots: A combined reciprocal-space and real-space approach Th. Schmidt, E. Roventa, G. Alexe, T. Clausen, J.I. Flege, S. Bernstorff, A. Rosenauer, D. Hommel, and J. Falta Phys. Rev. B, 72 (2005) DOI: 10.1103/PhysRevB.72.195334 Desorption site-specificity and halogen minority sites on Si(111) J.I. Flege, Th. Schmidt, J. Bätjer, M. Cakmak, G. Materlik and J. Falta New J. Phys., 7 (2005) 208 DOI: 10.1088/1367-2630/7/1/208 Sb-induced reconstructions on Si(113): Adatoms as the key elements M. Siebert, Th. Schmidt, J.I. Flege, and J. Falta Phys. Rev. B, 72 (2005) 045323 DOI: 10.1103/PhysRevB.72.045323 Surfactant mediated epitaxy of Ge on Si(111): beyond the surface Th. Schmidt, R. Kröger, T. Clausen, J. Falta, A. Janzen, M. Kammler. P. Kury, P. Zahl, and M. Horn-von Hoegen Appl. Phys. Lett. 86 (2005) 111910 DOI: 10.1063/1.1882760 CoPt 3 nanoparticles adsorbed on SiO 2 : a GISAXS and SEM study J.I. Flege, Th. Schmidt, G. Alexe, T. Clausen, S. Bernstorff, I. Randjelovic, V. Aleksandrovic, A.Kornowski, H. Weller and J. Falta Mater. Res. Soc. Symp. Proc. Vol. 840 (2005) DOI: 10.1557/PROC-840-Q6.10 XSW measurements of Sb on the Si(113) surface M. Siebert, J.I. Flege, Th. Schmidt and J. Falta Physica B 357 (2005) 115-117 DOI: 10.1016/j.physb.2004.11.037 top 2004 Small angle x-ray scattering reveals CdSe/ZnSSe quantum dot ordering Th. Schmidt, G. Alexe, D. Hommel, T. Clausen, J. Falta, and S. Bernstorff Elettra Highlights 2004 DOI: 10.1002/pssb.200304237 Interfacial interactions at Au/Si 3 N 4 /Si(111) and Ni/Si 3 N 4 /Si(111) structures with ultra-thin nitride films L. Aballe, L.Gregoratti, A. Barinov, and M. Kiskinova T. Clausen, S. Gangopadhyay, J. Falta Appl. Phys. Lett. 84 (2004) 5031 DOI: 10.1063/1.1763636 Dry etching characteristics and surface reconstruction of Cl/Si(113) J.I. Flege, Th. Schmidt, G. Materlik, and J. Falta Surf. Sci. 566-568 (2004) 94-99 DOI: 10.1016/j.susc.2004.05.028 Direct investigation of very thin CdSe layers on ZnSe by out-of-plane grazing incidence x-ray diffraction G. Alexe, T. Passow, Th. Schmidt, T. Clausen, J. Falta, H. Heinke and D. Hommel Phys. Stat. Sol. (c), 1 (2004) 702-705 DOI: 10.1002/pssc.200304297 Investigation of CdSe/ZnSSe quantum dot ordering by grazing incidence small angle x-ray scattering Th. Schmidt, T. Clausen, J. Falta, S. Bernstorff, G. Alexe, T. Passow and D. Hommel Phys. Stat. Sol. (b), 241 (2004) 523-526 DOI: 10.1002/pssb.200304237 Correlated stacks of CdSe/ZnSe quantum dots Th. Schmidt, T. Clausen, J. Falta, G. Alexe, T. Passow, D. Hommel, and S. Bernstorff Appl. Phys. Lett. 84 (2004) 4367-4369 Virt. J. Nanoscale Sci. Techn. 9 (2004) DOI: 10.1063/1.1756195 Photon-stimulated Desorption and X-ray Standing Waves J.I. Flege, Th. Schmidt, A. Hille, J. Falta, and G. Materlik Synchrotron Radiation News, 17 (3) (2004) 43-47 DOI: 10.1080/08940880408603094 Influence of substrate domain boundaries on surface reconstructions of Ga/Si(111) S. Gangopadhyay, Th. Schmidt, and J. Falta Surf. Sci., 552 (2004) 63-69 DOI: 10.1016/j.susc.2003.12.038 top 2003 Spectro-microscopy of ultra-thin SiN films on Si(111) Th. Schmidt, T. Clausen, S. Gangopadhyay, J. Falta, S. Heun, L. Gregoratti, A. Barinov, B. Kaulich, M. Kiskinova Nuclear Instruments and Methods in Physics Research B, 200 (2003) 79 - 84 DOI: 10.1016/S0168-583X(02)01678-6 top 2002 Subsurface interstitials as promoters of 3D growth of Ti on Si(111): An XSW, XPS and AFM investigation G. Kuri, Th. Schmidt, V. Hagen, G. Materlik, R. Wiesendanger, and J. Falta J. Vac. Sci. Technol. A 20(6) (2002) 1997-2003 Determination of the K adsorption site on Fe(110) with XSW B. Moest, Th. Schmidt, W.C.A.N. Ceelen, A.W. Denier van der Gon, J. Falta, and H.H. Brongersma Surf. Sci., 520 (2002) 137-150 Low temperature interface structure of CaF 2 /Si(111) studied by combining x-ray standing waves with component-resolved photoemission A. Klust, M. Bierkandt, J. Wollschläger, B.H. Müller, Th. Schmidt, and J. Falta Phys. Rev. B, 65 (2002) 193404-1 - 193404-4 Origin of x-ray photon stimulated desorption of Cl + and Cl 2+ ions from Cl/Si(111)-(1x1) J.I. Flege, Th. Schmidt, J. Falta, and G. Materlik Surf. Sci., 507-510 (2002) 381-388 [Download] Influence of capping conditions on structural properties of CdSe/ZnSe quantum dot structures T. Passow, K. Leonardi, H. Heinke, Th. Schmidt, J. Falta, A. Stockmann, H. Selke, and D. Hommel Physica E, 13 (2002) 1208 top 2001 Characterization of Ge d-doped Si(111) with RBS-channeling J. Yuhara, K. Morita, J. Falta, B.H. Müller, and M. Horn-von Hoegen Surf. Interface Anal., 31 (2001) 754-760 Segregation enhanced etching of Cd during Zn deposition on CdSe quantum dots T. Passow, H. Heinke, Th. Schmidt, J. Falta, A. Stockmann, H. Selke, P.L. Ryder, K. Leonardi and D. Hommel Phys. Rev. B, 64 (2001) 193311-1 - 193311-4 [Download] Grazing incidence structural characterization of InAs quantum dots on GaAs(001) K. Zhang, Ch. Heyn, W. Hansen, Th. Schmidt and J. Falta Appl. Surf. Sci., 175-176 (2001) 606-612 Erratum to: X-ray photon stimulated ion desorption revealed by standing waves J. Falta, A. Hille, T. Schmidt and G. Materlik Surf. Sci., 472 (2001) 154 Structural characterization of self-assembled InAs quantum dots grown by MBE K. Zhang, Ch. Heyn, W. Hansen, Th. Schmidt and J. Falta Journal of Crystal Growth, 227-228 (2001) 1020-1024 Lateral distribution of buried self-assembled InAs quantum dots in GaAs K. Zhang, J. Falta, Ch. Heyn, Th. Schmidt and W. Hansen Proc. 25th Int. Conf. Phys. Semicond., Osaka 2000 (Eds. N. Miura and T. Ando), Springer Verlag (2001) 371 top > 2000 Nondestructive detection of stacking faults for optimization of CdSe/ZnSe quantum-dot structures T. Passow, H. Heinke, J. Falta, K. Leonardi and D. Hommel Appl. Phys. Lett., 77(22) (2000) 3544 Distribution and shape of self-assembled InAs quantum dots grown on GaAs(001) K. Zhang, J. Falta, Th. Schmidt, Ch. Heyn, G. Materlik and W. Hansen Pure Appl. Chem., 72 (2000) 199 Strain Status of Self-assembled InAs Quantum Dots K. Zhang, Ch. Heyn, W. Hansen, Th. Schmidt and J. Falta Appl. Phys. Lett., 77(9) (2000) 1295 Ordering and Shape of Self-assembled InAs Quantum Dots on GaAs (001) K. Zhang, Ch. Heyn, W. Hansen, Th. Schmidt and J. Falta Appl. Phys. Lett., 76(16) (2000) 2229 Effects of electron irradiation on the structure and morphology of CaF 2 /Si(111) J. Wollschläger, T. Hildebrandt, R. Kayser, J. Viernow, A. Klust, J. Bätjer, A. Hille, Th. Schmidt and J. Falta Appl. Surf. Sci., 162-163 (2000) 309 Islands as catalyst for film relaxation in Bi mediated Ge epitaxy on Si(111) J. Falta, Th. Schmidt, G. Materlik, J. Zeysing, G. Falkenberg and R.L. Johnson, Appl. Surf. Sci., 162-163 (2000) 256 Initial stage of the Bi surfactant mediated growth of Ge on Si(111): A structural study Th. Schmidt, J. Falta, G. Materlik, J. Zeysing, G. Falkenberg and R.L. Johnson, Appl. Surf. Sci., 166 (2000) 399 X-ray interface characterization of buried InAs layers on GaAs(001) K. Zhang, A. Foede, Th. Schmidt, P. Sonntag, Ch. Heyn, G. Materlik, W. Hansen and J. Falta, Physica Status Solidi (b) 215 (1999) 791 Bi: Perfect surfactant for Ge growth on Si(111)? Th. Schmidt, J. Falta, G. Materlik, J. Zeysing, G. Falkenberg and R.L. Johnson, Appl. Phys. Lett. 74(10) (1999) 1391 [Download] X-ray photon stimulated desorption revealed by standing waves J. Falta, A. Hille, Th. Schmidt and G. Materlik, Surf. Sci. Lett. 436 (1999) L677 Giant magnetoresistance in Fe/Cr superlattices without bulk scattering R. Schad, D. Bahr, J. Falta, J. Dekoster, G. Langouche, P. Belien, G. Verbank, K. Temst, V.V. Moshchalokov and Y. Bruynseraede, Euro Phys. Lett. 44 (1998) 379 Strain as driving force for interface roughening of d doping layers J. Falta Appl. Surf. Sci. 130-132 (1998) 151 Structural analysis of Fe/Cr superlattices and their components R. Schad, D. Bahr, J. Falta, P. Belien and Y. Bruynseraede, J. Phys.: Condens. Matter 10 (1998) 61 High concentration Bi d doping layers on Si(001) J. Falta, O. Mielmann, T. Schmidt, A. Hille, C. Sánchez-Hanke, P. Sonntag, G. Materlik, F. Meyer zu Heringdorf, M. Kammler, M. Horn-von Hoegen and M. Copel, Appl. Surf. Sci. 123/124 (1998) 538 X-ray characterization of buried d layers J. Falta, D. Bahr, G. Materlik, B.H. Müller and M. Horn-von Hoegen, Surf. Rev. Lett. 5 (1998) 145 Strain induced interface roughness of Si 1-x C x d layers J. Falta, D. Bahr, A. Hille, H.J. Osten and G. Materlik, Appl. Phys. Lett. 71 (1997) 3525 K adsorption of Fe(100) studied by x-ray standing waves W. Ceelen, A.W. Dernier van der Gon, J. Falta, A. Hille and G. Materlik, Surf. Sci. 391 (1997) 59 Ge d layers in Si(100) characterized by x-ray reflectivity, grazing incidence diffraction and standing wave measurements U. Beck, P. Yang, T.H. Metzger, J. Peisl, J. Falta, G. Materlik, T. Rupp, H. Baumgärtner, I. Eisele and J.R. Patel, Il Nuovo Cimento 19 D (1997) 403 Stress reduction and interface quality of Sb d layers on Si(001) J. Falta, D. Bahr, A. Hille, G. Materlik, M. Kammler and M. Horn-von Hoegen, Appl. Phys. Lett. 69 (1996) 2906 Surfactant adsorption site and growth mechanism of Ge on Ga terminated Si(111) J. Falta, Th. Schmidt, A. Hille and G. Materlik, Phys. Rev. B 54 (1996) R17288 Towards perfect Ge d layers on Si(001) J. Falta, D. Bahr, G. Materlik, B.H. Müller and M. Horn-von Hoegen, Appl. Phys. Lett. 68 (1996) 1394 X-ray interface characterization of Ge d layers on Si(001) D. Bahr, J. Falta, G. Materlik, B.H. Müller and M. Horn-von Hoegen, Physica B 221 (1996) 96 Domain wall structure of Si(111)(v3xv3)R30°-Au J. Falta, A. Hille, D. Novikov, G. Materlik, L. Seehofer, G. Falkenberg and R.L. Johnson, Surf. Sci. 330 (1995) L673 Ge d-layers on Si(111) and Si(001) by MBE and SPE J. Falta, T. Gog, G. Materlik, B.H. Müller and M. Horn-von Hoegen, Mat. Res. Symp. Proc. 375 (1995) 177 Lattice position of Fe in Fe-doped LiNbO 3 T. Gog, P. Schotters, J. Falta, G. Materlik and M. Grodzicki, Journal of Physics: Condens. Matter 7 (1995) 6971 Interface roughening of Ge d layers on Si(111) J. Falta, T. Gog, G. Materlik, B.H. Müller and M. Horn-von Hoegen, Phys. Rev. B 51 (1995) 7598 Surfactants in Si(111) homoepitaxy M. Horn-von Hoegen, J. Falta, M. Copel and R.M. Tromp, Appl. Phys. Lett. 66 (1995) 487 Kossel diffraction in nearly perfect crystals: X-ray standing waves in reverse T. Gog, D. Novikov, J. Falta, A. Hille and G. Materlik, Journal de Physique IV, suppl. au Journal de Physique III Vol. 4 (1994) C9-449 Growth modes of Ge on GaAs(001) J. Falta, M.C. Reuter and R.M. Tromp, Appl. Phys. Lett. 65 (1994) 1680 LEEM and MEIS studies of Ge growth on GaAs(001) J. Falta, M. Copel, M.C. Reuter, F.K. LeGoues and R.M. Tromp, The Formation of Semiconductor Interfaces: Proceedings of the 4th International Conference (1994) 514 Ga-As intermixing in GaAs(001) reconstructions J. Falta, R.M. Tromp, M. Copel, G.D. Pettit and P.D. Kirchner, Phys. Rev. B 48 (1993) 5282 Frustrated dimers at the CoSi 2 Si(001) interface M. Copel and J. Falta, Phys. Rev. B 48 (1993) 2783 Surfactant coverage and epitaxy of Ge on Ga terminated Si(111) J. Falta, M. Copel, F.K. LeGoues and R.M. Tromp, Appl. Phys. Lett. 62 (1993) 2962 Reply to: Comment on Structure and composition of GaAs(001) Surfaces J. Falta, R.M. Tromp, M. Copel, G.D. Pettit and P.D. Kirchner, Phys. Rev. Lett. 70 (1993) 3173 MEIS investigations of Si and Ge epitaxy on GaAs(001)-c(2x8) J. Falta, M. Copel, F.K. LeGoues and R.M. Tromp, Phys. Rev. B 47 (1993) 9610 Structure and composition of GaAs(001) Surfaces J. Falta, R.M. Tromp, M. Copel, G.D. Pettit and P.D. Kirchner, Phys. Rev. Lett. 69 (1992) 3068 Effect of an interfacial Ti layer on the formation of CoSi 2 on Si K. Barmak, L.A. Clevenger, P.D. Agnello, M. Copel, J. Falta, F.M. d'Heurle, P. Dehaven and C. Cabral, Materials Research Society Symposium Proceedings, P238, 575 (1992) Ring clusters in transition metal surface structures P.A. Bennett, M. Copel, D. Cahill, J. Falta and R.M. Tromp, Phys. Rev. Lett. 69 (1992) 1224 Studies of crystalline defects during the early stages of growth of Si on Si(100) at low temperatures by spot profile analysis of LEED (SPA-LEED) J. Falta and M. Henzler, Surf. Sci. 269/270 (1992) 14 Low-energy electron-diffraction profile analysis of reaction-induced substrate changes on Pt(110) during catalytic CO oxidation J. Falta, R. Imbihl, M. Sander and M. Henzler, Phys. Rev. B 45 (1992) 6858 Formation of Turing structures in catalytic surface reactions: the facetting of Pt(110) in CO+O 2 R. Imbihl, J. Falta, D. Kaletta and M. Henzler, J. Vac. Sci. Technol. A 9 (1991) 1749 The initial stages of epitaxial growth of silicon on Si(100) 2x1 S. Heun, J. Falta and M. Henzler, Surf. Sci. 243 (1991) 132 Spatial pattern formation in a catalytic surface reaction: the facetting of Pt(110) in CO+O 2 J. Falta, R. Imbihl and M. Henzler, Phys. Rev. Lett. 64 (1990) 1409 Electron diffraction at stepped homogeneous and inhomogeneous surfaces J. Wollschläger, J. Falta and M. Henzler, Appl. Phys. A 50 (1990) 57 The initial stages of growth of silicon on Si(111) by spot profile analysis of low energy electron diffraction M. Horn-von Hoegen, J. Falta and M. Henzler, Thin Solid Films 183 (1989) 213 SPA LEED Studies of defects in thin epitaxial NiSi 2 layers on Si(111) J. Falta, M. Horn and M. Henzler, Appl. Surf. Sci. 41/42 (1989) 230 top

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Schedule

Schedule 17. April 2018, NW1, Otto-Hahn-Allee 1, Room H2 15:00 Registration & Coffee 16:00 - 16:15 Hans-Günther Döbereiner , Universität Bremen, Physarum & beyond 16:15 - 16:55 Klaudia Brix , Jacobs University, Proteases as cellular decision-making molecules – imaging proteolytic activities on the spot 16:55 - 17:35 Marcus Hauser , Otto-von-Guericke Universität Magdeburg, Migratory behaviour of Physarum polycephalum microplasmodia 17:35 - 18:00 Coffee 18:00 - 18:30 Christina Oettmeier , Universität Bremen, The fluidic circuitry of Physarum polycephalum 18:30 - 19:10 Mark Fricker , University of Oxford, Quantitation of Physarum networks and foraging behavior 20:00 + Informal dinner at Stadtwirt, Katharinenklosterhof 7, 28195 Bremen 18. April 2018, Cartesium, Rotunde, Enrique-Schmidt-Straße 5 09:00 - 09:40 Martin Grube , KFU Graz, Microscopic analyses of slime mold plasmodia 09:40 - 10:20 Gernot Glöckner , Universität Köln, The Physarum genome: A reconstruction 10:20 - 11:00 Wolfgang Marwan , Otto-von-Guericke Universität Magdeburg, The developmental decision in Physarum polycephalum taken during a walk through the Waddington landscape 11:00 - 11:30 Coffee 11:30 - 12:10 Markus Bär , PTB Berlin, Modeling Physarum microdroplets as active poroelastic two-phase media: deformation patterns and waves and comparison to experiments 12:10 - 12:40 Jakob Löber , MPI Dresden, Two-fluid model for crawling cell motility 12:40 - 13:10 Dirk Kulawiak , TU Berlin, Poroelastic two-phase model for moving droplets of Physarum polycephalum with free boundaries 13:10 - 14:20 Lunch 14:20 - 14:50 Daniel Schenz , Hokkaido University, Routing while scouting: How a slime mold optimizes its transportation network during exploration 14:50 - 15:30 Karen Alim , MPI Göttingen, Mechanism of signal propagation in Physarum polycephalum 15:30 - 16:15 Coffee 16:15 - 17:45 Audrey Dussutour , U Toulouse, Basal Cognition in Slime Molds Workshop keynote, ring lecture scheduled in the series Universal Mechanisms of Decision-Making 19:00 Workshop Dinner at Ratskeller 19. April 2018, NW1, Otto-Hahn-Allee 1, W1180 09:00 - 09:40 Heather Barnett , University of the Arts London, Interspecies Encounters: slime mould as bisocial mediator 09:40 - 10:20 Ursula Damm , Bauhaus Universität Weimar, How to make decisions like an artist? 10:20 - 11:00 Coffee 11:00 - 11:30 Tanja Huxoll , Universität Bremen, Binary decision-making of Physarum polycephalum 11:30 - 12:00 Jonghyun Lee , Universität Bremen, Alternative growth of Physarum polycephalum 12:00 - 12:30 Adrian Fessel , Universität Bremen, Topological dynamics of (planar) transportation networks 12:30 - 13:00 Jean Daniel Julien , MPI Göttingen, A model for the organization of contractions by fluid flows in Physarum polycephalum 13:00 - 14:00 Lunch 14:00 - 16:00 Free slots & Closing 16:00 - 18:00 Time to meet and discuss and visit local labs

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Publications research group Eickhoff

Publications research group Eickhoff List of publications Go to 2026 2025 2024 2023 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 2002 2001 2000 1999 and before 2026 Control of composition and atomic distribution in ternary molybdenum tungsten disulfide monolayers by sub-atomic layer deposition Christian Tessarek, Christian Petersen, Tim Grieb, Florian F. Krause, Niels Osterloh, Christian Habben, Andreas Rosenauer, Martin Eickhoff npj 2D Materials and Applications 10 , 69 (2026) DOI: 10.1038/s41699-026-00710-4 Direct electron transfer of xanthine dehydrogenase at photo-active InGaN nanowires G. Göbel, G. Steingelb, H. Nell, R. Hölzel, S. Leimkühler, M. Eickhoff, F. Lisdat Electrochemistry Communications 189 , 108182 (2026) DOI: 10.1016/j.elecom.2026.108182 Absorption of orthorhombic multi-domain κ-(In x Ga 1−x ) 2 O 3 : bandgap energies by an anisotropic analysis Elias Kluth, Alexander Karg, Martin Eickhoff, Rüdiger Goldhahn, Martin Feneberg Japanese Journal of Applied Physics 65 , 031003 (2026) DOI: 10.35848/1347-4065/ae3bc3 2025 Patent: Verfahren zur kontrollierten Abdünnung eines mehrlagigen van-der-Waals Schichtsystems Christian Tessarek, Martin Eickhoff German Patent and Trade Mark Office, Patent No. 102019002329 https://register.dpma.de/DPMAregister/pat/register?AKZ=1020190023293 Lattice parameters and elastic properties for strain analysis in κ-(In x Ga 1−x ) 2 O 3 /κ-Ga 2 O 3 /Al 2 O 3 heterostructures from density functional theory, x-ray diffraction, and scanning precession nanobeam electron diffraction Marco Schowalter, Alexander Karg, Florian F. Krause, Manuel Alonso-Orts, Sushma Raghuvansy, Martin S. Williams, Tim Grieb, Christoph Mahr, Thorsten Mehrtens, Martin Eickhoff, Andreas Rosenauer Journal of Applied Physics 138 , 115106 (2025) DOI: 10.1063/5.0293610 Confined-space annealing of 2D transition metal dichalcogenides: Improving properties, material reorganization, and chalcogen exchange Christian Tessarek, Christian Petersen, Tim Grieb, Florian F. Krause, Alexander Karg, Christian Habben, Andreas Rosenauer, Martin Eickhoff APL Materials 13 , 061105 (2025) DOI: 10.1063/5.0250685 Stark manifold ultraviolet emission in Gd-implanted β-Ga 2 O 3 thin films, Martin S. Williams, Mahmoud Elhajhasan, Marco Schowalter, Lewis Penman, Alexander Karg, Patrick Vogt, Fabien C.-P. Massabuau, Andreas Rosenauer, Gordon Callsen, Carsten Ronning, Martin Eickhoff, Manuel Alonso-Orts Materials Today Physics 54 , 101731 (2025) DOI: 10.1016/j.mtphys.2025.101731 Structural evolution and nucleation dynamics of RF sputtered Ga 2 O 3 films on Ru(0001): The impact of deposition temperature and Ru surface morphology Aman Baunthiyal, Marco Schowalter, Martin Williams, Jon-Olaf Krisponeit, Thorsten Mehrtens, Alexander Karg, Andreas Rosenauer, Martin Eickhoff, Jens Falta APL Materials 13 , 041130 (2025) DOI: 10.1063/5.0270431 β-Ga 2 O 3 microwires and nanomembranes for photonics Daniel Carrasco, Manuel Alonso-Orts, Paula Pérez-Peinado, Ruben J. T. Neelissen, Pedro L. Alcázar, Jaime Dolado, Gema Martínez-Criado, Jorge Quereda, Francisco Domínguez-Adame, Martin Eickhoff, Bianchi Méndez, Emilio Nogales Proceedings Volume 13367, Oxide-based Materials and Devices XVI; 133670I (2025) DOI: 10.1117/12.3043754 Accurate and Robust Wide-Range Luminescent Microthermometer Based on ALD-Encapsulated Ga 2 O 3 :Cr DBR Microcavities Manuel Alonso-Orts, Ruben J. T. Neelissen, Daniel Carrasco, Marco Schowalter, Andreas Rosenauer, Emilio Nogales, Bianchi Méndez, Martin Eickhoff Advanced Materials Technologies 10 , 2400881 (2024) DOI: 10.1002/admt.202400881 2024 Initial results of a pilot project for sub-seabed basalt storage of carbon dioxide on the Reykjanes Ridge Achim Kopf, Sayoni Bhattacharya, Melanie Dunger, Alexander Hinz, Marcel Kamrad, Isabel Kremin, Isabel Lange, Eric Pieter Achterberg, Wolfgang Bach, Ralf Bachmayer, Raimund Brunner, Martin Eickhoff, Mario Esposito, Tim Freudenthal, Nike Fuchs, Christian Meurer, Lars Rüpke, Heinz Schelwat, Gerd Seidel, Matthias Zabel Carbon Capture Science & Technology 13, 100265 (2024) DOI: 10.1016/j.ccst.2024.100265 Composition and strain of the pseudomorphic α-phase intermediate layer at the Ga 2 O 3 /Al 2 O 3 interface M. Schowalter, A. Karg, M. Alonso-Orts, J. A. Bich, S. Raghuvansy, M. S. Williams, F. F. Krause, T. Grieb, C. Mahr, T. Mehrtens, P. Vogt, A. Rosenauer, M. Eickhoff APL Materials 12 , 091104 (2024) DOI: 10.1063/5.0226857 Electrochemical Detection of Selective Anion Transport through Subnanopores in Liquid-Crystalline Water Treatment Membranes Sven Mehlhose, Takeshi Sakamoto, Martin Eickhoff, Takashi Kato, and Motomu Tanaka Journal of Physical Chemistry B 128 , 4537 (2024) DOI: 10.1021/acs.jpcb.4c00047 Atomic vs. sub-atomic layer deposition: impact of growth rate on the optical and structural properties of MoS 2 and WS 2 Christian Tessarek, Tim Grieb, Florian F. Krause, Christian Petersen, Alexander Karg, Alexander Hinz, Niels Osterloh, Christian Habben, Stephan Figge, Jon-Olaf Krisponeit, Thomas Schmidt, Jens Falta, Andreas Rosenauer, Martin Eickhoff 2D Materials 11 , 025031 (2024) DOI: 10.1088/2053-1583/ad3134 Erratum: Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy Sushma Raghuvansy, Jon P. McCandless, Marco Schowalter, Alexander Karg, Manuel Alonso-Orts, Martin S. Williams, Christian Tessarek, Stephan Figge, Kazuki Nomoto, Huili Grace Xing, Darrell G. Schlom, Andreas Rosenauer, Debdeep Jena, Patrick Vogt APL Materials 12 , 019902 (2024) DOI: 10.1063/5.0192370 Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3 by molecular beam epitaxy Martin S. Williams, Manuel Alonso-Orts, Marco Schowalter, Alexander Karg, Sushma Raghuvansy, Jon P. McCandless, Debdeep Jena, Andreas Rosenauer, Martin Eickhoff, Patrick Vogt APL Materials 12 , 011120 (2024) DOI: 10.1063/5.0180041 2023 Growth and characterization of sputter-deposited Ga 2 O 3 -based memristive devices Aman Baunthiyal, Jon-Olaf Krisponeit, Marco Schowalter, Thorsten Mehrtens, Alexander Karg, Andreas Rosenauer, Martin Eickhoff, Jens Falta Applied Physics Letters 123 , 213504 (2023) DOI: 10.1063/5.0170354 Growth of β-Ga 2 O 3 and ϵ/κ-Ga 2 O 3 on AlN(0001) by molecular-beam epitaxy Sushma Raghuvansy, Jon P. McCandless, Marco Schowalter, Alexander Karg, Manuel Alonso-Orts, Martin S. Williams, Christian Tessarek, Stephan Figge, Kazuki Nomoto, Huili Grace Xing, Darrell G. Schlom, Andreas Rosenauer, Debdeep Jena, Martin Eickhoff, Patrick Vogt APL Materials 11 , 111113 (2023) DOI: 10.1063/5.0174373 Indium: A surfactant for the growth of ɛ/κ-Ga 2 O 3 by molecular beam epitaxy Alexander Karg, Alexander Hinz, Stephan Figge, Marco Schowalter, Patrick Vogt, Andreas Rosenauer, Martin Eickhoff APL Mater. 11 , 091114 (2023) DOI: 10.1063/5.0167736 Biotic and Abiotic Interactions in Freshwater Mesocosms Determine Fate and Toxicity of CuO Nanoparticles Tonya Gräf, Viviane Koch, Jan Köser, Jonas Fischer, Christian Tessarek, and Juliane Filser Environmental Science & Technology 57 , 12376 (2023) DOI: 10.1021/acs.est.3c00493 Nucleation window of Ga 2 O 3 and In 2 O 3 for Molecular Beam Epitaxy on (0001) Al 2 O 3 Alexander Karg, Justin Andreas Bich, Adrian Messow, Marco Schowalter, Stephan Figge, Andreas Rosenauer, Patrick Vogt, Martin Eickhoff Crystal Growth & Design 23 , 4435 (2023) DOI: 10.1021/acs.cgd.3c00193 Correlative analysis on InGaN/GaN nanowires: structural and optical properties of self-assembled short-period superlattices Manuel Alonso-Orts, Rudolfo Hötzel, Tim Grieb, Matthias Auf der Maur, Maximilian Ries, Felix Nippert, Benjamin März, Knut Müller-Caspary, Markus R. Wagner, Andreas Rosenauer, Martin Eickhoff Discover Nano 18 , 27 (2023) DOI: 10.1186/s11671-023-03808-6 Growth of alpha-Ga2O3 on alpha-Al2O3 by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy J. P. McCandless, D. Rowe, N. Pieczulewski, V. Protasenko, M. Alonso-Orts, M. S. Williams, M. Eickhoff, H. G. Xing, D. A. Muller, D. Jena, P. Vogt Japanese Journal of Applied Physics 62 , SF1013 (2023) DOI: 10.35848/1347-4065/acbe04 Temperature-Dependent Anisotropic Refractive Index in β-Ga 2 O 3 : Application in Interferometric Thermometers Daniel Carrasco, Eva Nieto-Pinero, Manuel Alonso-Orts, Rosalía Serna, Jose M. San Juan , María L. Nó, Jani Jesenovec, John S. McCloy, Emilio Nogales, Bianchi Méndez Nanomaterials 13 , 1126 (2023) DOI: 10.3390/nano13061126 Origin of the spectral red-shift and polarization pattersn of self-assembled InGaN nanostructures on GaN nanowires Maximilian Ries, Felix Nippert, Benjamin März, Manuel Alonso-Orts, Tim Grieb, Rudolfo Hötzel, Pascal Hille, Pouria Emtenani, Eser Metin Akinoglu, Eugen Speiser, Julian Plaickner, Jörg Schörmann, Matthias Auf der Maur, Knut Müller-Caspary, Andreas Rosenauer, Norbert Esser, Martin Eickhoff, Markus R. Wagner Nanoscale 15 , 7077 (2023) DOI: 10.1039/d2nr05529e 2022 Detection of Hydrogen Dissolved in Liquid Media: A Review and Outlook Alejandra Castro-Carranza, Pablo Vega-Hernandez, Jairo C. Nolasco, Anette Ladstätter-Weißenmayer, Martin Eickhoff, Jürgen Gutowski Physica Status Solidi A 219 , 2100669 (2022) DOI: 10.1002/pssa.202100669 Enhanced epitaxial growth of Ga 2 O 3 using an ultrathin SnO 2 layer A. Karg, M. Kracht, P. Vogt, A. Messow, N. Braud, J. Schörmann, M. Rohnke, J. Janek, J. Falta, M. Eickhoff Journal of Applied Physics 132 , 195304 (2022) DOI: 10.1063/5.0127232 Controlled Si doping of β-Ga 2 O 3 by molecular beam epitaxy J. P. McCandless, V. Protasenko, B. W. Morell, E. Steinbrunner, A. T. Neal, N. Tanen, Y. Cho, T. J. Asel, S. Mou, P. Vogt, H. G. Xing, D. Jena Appl. Phys. Lett. 121, 072108 (2022) DOI: 10.1063/5.0101132 Ga 2 O 3 microwires as wide dynamical range temperature sensors Manuel Alonso-Orts, Daniel Carrasco, José M. San Juan, María L. Nó, Alicia de Andrés, Emilio Nogales, Bianchi Méndez Proceedings SPIE 12002, Oxide-based Materials and Devices XIII, 120020A (5 March 2022) DOI: 10.1117/12.2618319 Streched lignin/polycrylonitrile blended crbon nanofiber as high conductive electrode in electric double layer capacitor Manish Kumar, Shogo Taira, Nutthira Pakkang, Kengo Shigetomi, Yasumitsu Uraki Advances in Natural Sciences: Nanoscience and Nanotechnology 13 , 025007 (2022) DOI: 10.1088/2043-6262/ac7323 2021 4D-STEM at interfaces to GaN: Centre-of-mass approach & NBED-disc detection Tim Grieb, Florian F. Krause, Knut Müller-Caspary, Robert Ritz, Martin Simson, Jörg Schörmann, Christoph Mahr, Jan Müßener, Marco Schowalter, Heike Soltau, Martin Eickhoff, Andreas Rosenauer Ultramicroscopy 228 , 113321 (2021) DOI: 10.1016/j.ultramic.2021.113321 Surface Microscopy of Atomic and Molecular Hydrogen from Field-Evaporating Semiconductors Lorenzo Rigutti, Enrico Di Russo, Florian Chabanais, Ivan Blum, Jonathan Houard, Noëlle Gogneau, Ludovic Largeau, Alexander Karg, Martin Eickhoff, Williams Lefebvre, François Vurpillot Journal of Physical Chemistry C 125 , 17078 (2021) DOI: 10.1021/acs.jpcc.1c04778 Behavior of the ε-Ga2O3:Sn Evaporation During Laser-Assisted Atom Probe Tomography Florian Chabanais, Enrico Di Russo, Alexander Karg, Martin Eickhoff, Williams Lefebvre, Lorenzo Rigutti Microscopy and Microanalysis 27 , 687 (2021) DOI: 10.1017/S1431927621000544 Free-Standing ZnSe-Based Microdisk Resonators - Influence of Edge Roughness on the Optical Quality and Reducing Degradation with Supported Geometry Wilken Seemann, Alexander Kothe, Christian Tessarek, Gesa Schmidt, Siqi Qiao, Nils von den Driesch, Jan Wiersig, Alexander Pawlis, Gordon Callsen, Jürgen Gutowski Physica Status Solidi B, 2100249 (2021) DOI: 10.1002/pssb.202100249 Excitons Bound to Defect States in Two-dimensional (2D) MoS 2 Oleg Gridenco, Kathrin Sebald, Christian Tessarek, Sven Mehrkens, Martin Eickhoff, Jürgen Gutowski IEEE Transactions on Nanotechnology 20 , 400 (2021) DOI: 10.1109/TNANO.2021.3076574 Ion compositions in artificial media control the impact of humic acid on colloidal behaviour, dissolution and speciation of CuO-NP Jonas Fischer, Tonya Gräf, Yvonne Sakka, Christian Tessarek, Jan Köser Science of The Total Environment 785 , 147241 (2021) DOI: 10.1016/j.scitotenv.2021.147241 Comparing co‐catalytic effects of ZrOx, SmOx, and Pt on COx methanation over Co‐based catalysts prepared by double flame spray pyrolysis Jakob Stahl, Jan Ilsemann, Suman Pokhrel, Marco Schowalter, Christian Tessarek, Andreas Rosenauer, Martin Eickhoff, Marcus Bäumer, Lutz Mädler ChemCatChem 13 , 2815 (2021) DOI: 10.1002/cctc.202001998 Near-UV optical cavities in Ga 2 O 3 nanowires Manuel Alonso-Orts, Gerwin Chilla, Rudolfo Hötzel, Emilio Nogales, Jose M. San Juan, Maria L. No, Martin Eickhoff, Bianchi Mendez Optics Letters 46 , 278 (2021) DOI : 10.1364/OL.410757 2020 Influence of Polymorphism on the Electronic Structure of Ga 2 O 3 Jack E. N. Swallow, Christian Vorwerk, Piero Mazzolini, Patrick Vogt, Oliver Bierwagen, Alexander Karg, Martin Eickhoff, Jörg Schörmann, Markus R. Wagner, Joseph W. Roberts, Paul R. Chalker, Matthew J. Smiles, Philip Murgatroyd, Sara A. Razek, Zachary W. Lebens-Higgins, Louis F. J. Piper, Leanne A. H. Jones, Pardeep K. Thakur, Tien-Lin Lee, Joel B. Varley, Jürgen Furthmüller, Claudia Draxl, Tim D. Veal, Anna Regoutz Chemistry of Materials 32 , 8460, (2020) DOI: 10.1021/acs.chemmater.0c02465 Chapter Eight - Luminescence probing of surface adsorption processes using InGaN/GaN nanowire heterostructure arrays Konrad Maier, Andreas Helwig, Gerhard Müller, Martin Eickhoff Semiconductor Gas Sensors (Second Edition), Woodhead Publishing, 2020, Pages 239-270, ISBN 9780081025598 DOI: 10.1016/B978-0-08-102559-8.00008-2 Controlled Laser-Thinning of MoS 2 Nanolayers and Transformation to Amorphous MoO x for 2D Monolayer Fabrication Christian Tessarek, Oleg Gridenco, Martin Wiesing, Jan Müßener, Stephan Figge, Kathrin Sebald, Jürgen Gutowski, Martin Eickhoff ACS Applied Nano Materials 4 , 7490 (2020) DOI: 10.1021/acsanm.0c01104 Rare Earth-Doped Y 4 Al 2 O 9 Nanoparticles for Stable Light-Converting Phosphors Chenyang Liu, Suman Pokhrel, Christian Tessarek, Haipeng Li, Marco Schowalter, Andreas Rosenauer, Martin Eickhoff, Lutz Mädler ACS Applied Nano Materials 3 , 699 (2020) DOI : 10.1021/acsanm.9b02231 2019 Consistent description of mesoscopic transport: Case study of current-dependent magnetoconductance in single GaN:Ge nanowires Patrick Uredat, Pascal Hille, Jörg Schörmann, Martin Eickhoff, Peter J. Klar, Matthias T. Elm Physical Review B 100 , 085409 (2019) DOI : 10.1103/PhysRevB.100.085409 The Role of Polarity in Nonplanar Semiconductor Nanostructures María de la Mata, Reza R. Zamani, Sara Martí-Sánchez, Martin Eickhoff, Qihua Xiong, Anna Fontcuberta i Morral, Philippe Caroff, Jordi Arbiol Nano Letters 19 , 3396 (2019) DOI : 10.1021/acs.nanolett.9b00459 Electrical Polarization in AlN/GaN Nanodisks Measured by Momentum-Resolved 4D Scanning Transmission Electron Microscopy Knut Müller-Caspary, Tim Grieb, Jan Müßener, Nicolas Gauquelin, Pascal Hille, Jörg Schörmann, Johan Verbeeck, Sandra Van Aert, Martin Eickhoff, Andreas Rosenauer Physical Review Letters 122 , 106102 (2019) DOI : 10.1103/PhysRevLett.122.106102 2018 Photoluminescence Detection of Surface Oxidation Processes on InGaN/GaN Nanowire Arrays Konrad Maier, Andreas Helwig, Gerhard Müller, Jörg Schörmann, Martin Eickhoff ACS Sensors 3 , 2254 (2018) DOI : 10.1021/acssensors.8b0041 Influence of the atom source operating parameters on the structural and optical properties of In x Ga 1−x N nanowires grown by plasma-assisted molecular beam epitaxy P. Hille , F. Walther , P. Klement , J. Müßener , J. Schörmann , J. Kaupe , S. Mitić , N. W. Rosemann , S. Chatterjee , A. Beyer , K. I. Gries , K. Volz , M. Eickhoff Journal of Applied Physics 124 , 165703 (2018) DOI : 10.1063/1.5050391 Optical Analysis of Oxygen Self‐Diffusion in Ultrathin CeO 2 Layers at Low Temperatures Paula Neuderth, Pascal Hille, Sara Martí‐Sánchez, María de la Mata, Mariona Coll, Jordi Arbiol, Martin Eickhoff Advanced Energy Materials 8 , 1802120 (2018) DOI : 10.1002/aenm.201802120 Effects of the Fermi level energy on the adsorption of O-2 to monolayer MoS 2 Philip Klement, Christina Steinke, Sangam Chatterjee, Tim O. Wehling, Martin Eickhoff 2D Materials 5 , 045025 (2018) DOI : 10.1088/2053-1583/aadc24 Dynamic Extracellular Imaging of Biochemical Cell Activity Using InGaN/GaN Nanowire Arrays as Nanophotonic Probes Sara Hölzel, Mikhail V. Zyuzin, Jens Wallys, Ervice Pouokam, Jan Müßener, Pascal Hille, Martin Diener, Wolfgang J. 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Callsen Communications Physics 1 , 48 (2018) DOI : 10.1038/s42005-018-0044-1 Ion sensitive AlGaN/GaN field-effect transistors with monolithically integrated wheatstone bridge for temperature- and drift compensation in enzymatic biosensors Daniel Stock, Gesche Mareike Müntze, Stephan Figge, Martin Eickhoff Sensors and Actuators B: Chemical 263 , 20 (2018) DOI : 10.1016/j.snb.2018.02.068 Photoelectrochemical response of GaN, InGaN, and GaNP nanowire ensembles Jan M. Philipps , Sara Hölzel , Pascal Hille , Jörg Schörmann , Sangam Chatterjee , Irina A. Buyanova , Martin Eickhoff , Detlev M. Hofmann Journal of Applied Physics 123 , 175703 (2018) DOI : 10.1063/1.5024334 Optical emission of GaN/AlN quantum-wires – the role of charge transfer from a nanowire template Jan Müßener, Ludwig A. Th. Greif, Stefan Kalinowski, Gordon Callsen, Pascal Hille, Jörg Schörmann, Markus R. Wagner, Andrei Schliwa, Sara Martí-Sánchez, Jordi Arbiol, Axel Hoffmann, Martin Eickhoff Nanoscale 10 , 5591 (2018) DOI : 10.1039/C7NR08057C Synthesis of SnO 2 Nanowires Using SnI 2 as Precursor and Their Application as High‐Performance Self‐Powered Ultraviolet Photodetectors Jie Jiang, Florian Heck, Detlev M. Hofmann, Martin Eickhoff Physica Status Solidi B 255 , 1700426 (2018) DOI : 10.1002/pssb.201700426 Passivation layers for nanostructured photoanodes: ultra-thin oxides on InGaN nanowires P. Neuderth, P. Hille, J. Schörmann, A. Frank, C. Reitz, S. Martí-Sánchez, M. de la Mata, M. Coll, J. Arbiol, R. Marschall, M. Eickhoff Journal of Materials Chemistry A 6 , 565 (2018) DOI : 10.1039/C7TA08071A Flexible Modulation of Electronic Band Structures of Wide Band Gap GaN Semiconductors Using Bioinspired, Nonbiological Helical Peptides Sven Mehlhose, Nataliya Frenkel, Hirotaka Uji, Sara Hölzel, Gesche Müntze, Daniel Stock, Silvio Neugebauer, Armin Dadgar, Wasim Abuillan, Martin Eickhoff, Shunsaku Kimura, Motomu Tanaka Advanced Functional Materials 28 , 1704034 (2018) DOI: 10.1002/adfm.201704034 2017 Evidence for nitrogen-related deep acceptor states in SnO 2 grown by chemical vapor deposition Jie Jiang , Lars Ostheim , Matthias Kleine-Boymann , Detlev M. Hofmann , Peter J. Klar , Martin Eickhoff Journal of Applied Physics 122 , 205702 (2017) DOI : 10.1063/1.5000115 Tin-Assisted Synthesis of ε−Ga 2 O 3 by Molecular Beam Epitaxy M. Kracht, A. Karg, J. Schörmann, M. Weinhold, D. Zink, F. Michel, M. Rohnke, M. Schowalter, B. Gerken, A. Rosenauer, P. J. Klar, J. Janek, M. Eickhoff Physical Review Applied 8 , 054002 (2017) DOI : 10.1103/PhysRevApplied.8.054002 Three dimensional reconstruction of InGaN nanodisks in GaN nanowires: Improvement of the nanowire sample preparation to avoid missing wedge effects Katharina Ines Gries, Julian Schlechtweg, Pascal Hille, Jörg Schörmann, Martin Eickhoff, Kerstin Volz Journal of Crystal Growth 475 , 202 (2017) DOI : 10.1016/j.jcrysgro.2017.06.020 Competitive adsorption of air constituents as observed on InGaN/GaN nano-optical probes Konrad Maier, Andreas Helwig , Gerhard Müller, Pascal Hille , Jörg Teubert, Martin Eickhoff Sensors and Actuators B: Chemical 250 , 91 (2017) DOI : 10.1016/j.snb.2017.04.098 Bias-Controlled Optical Transitions in GaN/AlN Nanowire Heterostructures Jan Müßener, Pascal Hille, Tim Grieb, Jörg Schörmann, Jörg Teubert, Eva Monroy, Andreas Rosenauer, Martin Eickhoff ACS Nano 11 , 8758 (2017) DOI : 10.1021/acsnano.7b02419 InGaN/GaN nanowires as a new platform for photoelectrochemical sensors – detection of NADH M. Riedel, S. Hölzel, P. Hille, J. Schörmann, M. Eickhoff, F. Lisdat Biosensors and Bioelectronics 94 , 298 (2017) DOI : 10.1016/j.bios.2017.03.022 Bias-Controlled Spectral Response in GaN/AlN Single-Nanowire Ultraviolet Photodetectors Maria Spies, Martien I. den Hertog , Pascal Hille, Jörg Schörmann, Jakub Polaczyński, Bruno Gayral, Martin Eickhoff, Eva Monroy, Jonas Lähnemann Nano Letters 17 , 4231 (2017) DOI : 10.1021/acs.nanolett.7b01118 Transport mechanisms in SnO 2 :N,H thin film grown by chemical vapor deposition Jie Jiang, Lars Ostheim, David Hartung, Yinmei Lu, Detlev M. Hofmann, Martin Eickhoff, Peter J. Klar Physica Status Solidi B 254 , 1700003 (2017) DOI : 10.1002/pssb.201700003 Study of the carrier transfer across the GaNP nanowire electrolyte interface by electron paramagnetic spin trapping Jan M. Philipps , Jan E. Stehr , Detlev M. Hofmann , Irina A. Buyanova , Martin Eickhoff Applied Physics Letters 110 , 222101 (2017) DOI : 10.1063/1.4984277 Influence of the cluster constituents’ reactivity on the desorption/ionization process induced by neutral SO 2 clusters A. Portz , M. Baur , C. R. Gebhardt , A. J. Frank , P. Neuderth , M. Eickhoff , M. Dürr Journal of Chemical Physics 146 , 134705 (2017) DOI : 10.1063/1.4979488 Photoluminescence Probing of Complex H 2 O Adsorption on InGaN/GaN Nanowires Konrad Maier, Andreas Helwig, Gerhard Müller, Pascal Hille, Jörg Teubert, Martin Eickhoff Nano Letters 17 , 615 (2017) DOI : 10.1021/acs.nanolett.6b03299 2016 Interfacial properties of self-assembled GaN nanowires on pre-processed Al2O3(0001) surfaces T. Koukoula, J. Kioseoglou, Th. Kehagias, F. Furtmayr, M. Eickhoff, H. Kirmse, Th. Karakostas, Ph. Komninou Materials Science in Semiconductor Processing 55 , 46 (2016) DOI : 10.1016/j.mssp.2016.03.015 Hydrogen induced mobility enhancement in RF sputtered Cu2O thin films K. P. Hering , C. Kandzia , J. Benz , B. G. Kramm , M. Eickhoff , P. J. Klar Journal of Applied Physics 120 , 185705 (2016) DOI : 10.1063/1.4966605 Ge doping of GaN beyond the Mott transition A. Ajay, J. Schörmann, M. Jiménez-Rodriguez, C. B. Lim, F. Walther, M. Rohnke, I. Mouton, L. Amichi, C. Bougerol, M. I. Den Hertog, M. Eickhoff Journal of Physics D: Applied Physics 49 , 445301 (2016) DOI : 10.1088/0022-3727/49/44/445301 Luminescent properties of ZnO and ZnMgO epitaxial layers under high hydrostatic pressure A. Kaminska, A. Duzynska, M. Nowakowska, A. Suchocki, T. A. Wassner, B. Laumer, M. Eickhoff Journal of Alloys and Compounds 672 , 125 (2016) DOI : 10.1016/j.jallcom.2016.02.128 Shift of optical absorption edge in SnO2 films with high concentrations of nitrogen grown by chemical vapor deposition Jie Jiang , Yinmei Lu , Bruno K. Meyer , Detlev M. Hofmann , Martin Eickhoff Journal of Applied Physics 119 , 245703 (2016) DOI : 10.1063/1.4954693 Nitrogen incorporation in SnO2 thin films grown by chemical vapor deposition Jie Jiang, Yinmei Lu, Benedikt Kramm, Fabian Michel, Christian T. Reindl, Max E. Kracht, Peter J. Klar, Bruno K. Meyer, Martin Eickhoff Physica Status Solidi B 253 , 1087 (2016) DOI : 10.1002/pssb.201552747 Short-wavelength, mid- and far-infrared intersubband absorption in nonpolar GaN/Al(Ga)N heterostructures Caroline B. Lim, Mark Beeler, Akhil Ajay, Jonas Lähnemann, Edith Bellet-Amalric, Catherine Bougerol, Jörg Schörmann, Martin Eickhoff, Eva Monroy Japanese Journal of Applied Physics 55 , 05FG05 (2016) DOI : 10.7567/JJAP.55.05FG05 UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices Jonas Lähnemann, Martien Den Hertog, Pascal Hille, Marı́a de la Mata, Thierry Fournier, Jörg Schörmann, Jordi Arbiol, Martin Eickhoff, Eva Monroy Nano Letters 16 , 3260 (2016) DOI : 10.1021/acs.nanolett.6b00806 Optical manipulation of a multilevel nuclear spin in ZnO: Master equation and experiment J. H. Buß, J. Rudolph, T. A. Wassner, M. Eickhoff, D. Hägele Physical Review B 93 , 155204 (2016) DOI : 10.1103/PhysRevB.93.155204 In situ monitoring of myenteric neuron activity using acetylcholinesterase-modified AlGaN/GaN solution-gate field-effect transistors Gesche Mareike Müntze, Ervice Pouokam, Julia Steidle, Wladimir Schäfer, Alexander Sasse, Kai Röth, Martin Diener, Martin Eickhoff Biosensors and Bioelectronics 77 , 1048 (2016) DOI : 10.1016/j.bios.2015.10.076 Plasma assisted molecular beam epitaxy of Cu2O on MgO(001): Influence of copper flux on epitaxial orientation M. Kracht, J. Schoermann, M. Eickhoff Journal of Crystal Growth 436 , 87 (2016) DOI : 10.1016/j.jcrysgro.2015.11.041 2015 Doping-induced universal conductance fluctuations in GaN nanowires Matthias T. Elm, Patrick Uredat, Jan Binder, Lars Ostheim, Markus Schäfer, Pascal Hille, Jan Müßener, Jörg Schörmann, Martin Eickhoff, Peter J. Klar Nano Letters 15 , 7822 (2015) DOI : 10.1021/acs.nanolett.5b02332 Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5-10 THz band C. B. Lim, A. Ajay, C. Bougerol, B. Haas, J. Schörmann, M. Beeler, J. Lähnemann, M. Eickhoff, E. Monroy Nanotechnology 26 , 435201 (2015) DOI : 10.1088/0957-4484/26/43/435201 Effect of water vapor and surface morphology on the low temperature response of metal oxide semiconductor gas sensors Konrad Maier, Andreas Helwig, Gerhard Müller, Pascal Hille, Martin Eickhoff Materials 8 , 6570 (2015) DOI : 10.3390/ma8095323 Self-assembly of ordered wurtzite/rock salt heterostructures - A new view on phase separation in MgxZn1-xO K. I. Gries , T. A. Wassner , S. Vogel , J. Bruckbauer , I. Häusler , R. Straubinger , A. Beyer , A. Chernikov , B. Laumer , M. Kracht , C. Heiliger , J. Janek , S. Chatterjee , K. Volz , M. Eickhoff Journal of Applied Physics 118 , 045706 (2015) DOI : 10.1063/1.4926776 Structural and electronic properties of GaN nanowires with embedded InxGa1-xN nanodisks J. Kioseoglou , Th. Pavloudis , Th. Kehagias , Ph. Komninou , Th. Karakostas , C. D. Latham , M. J. Rayson , P. R. Briddon , M. Eickhoff Journal of Applied Physics 118 , 034301 (2015) DOI : 10.1063/1.4926757 Long-lived excitons in GaN/AlN nanowire heterostructures M. Beeler, C. B. Lim, P. Hille, J. Bleuse, J. Schörmann, M. de la Mata, J. Arbiol, M. Eickhoff, E. Monroy Physical Review B 91 , 205440 (2015) DOI : 10.1103/PhysRevB.91.205440 Electrical transport properties of Ge-doped GaN nanowires M. Schäfer, M. Günther, C. Länger, J. Müßener, M. Feneberg, P. Uredat, M. T. Elm, P. Hille, J. Schörmann, J. Teubert, T. Henning, P. J. Klar, M. Eickhoff Nanotechnology 26 , 135704 (2015) DOI : 10.1088/0957-4484/26/13/135704 Quantitative analysis of immobilized penicillinase using enzyme-modified AlGaN/GaN field-effect transistors Gesche Mareike Müntze, Barbara Baur, Wladimir Schäfer, Alexander Sasse, John Howgate, Kai Röth, Martin Eickhoff Biosensors and Bioelectronics 64 , 605 (2015) DOI : 10.1016/j.bios.2014.09.062 Integration of an opto-chemical detector based on group III-nitride nanowire heterostructures R. Kleindienst, P. Becker, V. Cimalla, A. Grewe, P. Hille, M. Krüger, J. Schörmann, U. T. Schwarz, J. Teubert, M. Eickhoff, S. Sinzinger Applied Optics 54 , 839 (2015) DOI : 10.1364/AO.54.000839 2014 Probing the Internal Electric Field in GaN/AlGaN Nanowire Heterostructures Jan Müßener, Jörg Teubert, Pascal Hille, Markus Schäfer, Jörg Schörmann, Maria de la Mata, Jordi Arbiol, Martin Eickhoff Nano Letters 14 , 5118 (2014) DOI : 10.1021/nl501845m High Precision, Electrochemical Detection of Reversible Binding of Recombinant Proteins on Wide Bandgap GaN Electrodes Functionalized with Biomembrane Models Nataliya Frenkel, Jens Wallys, Sara Lippert, Jörg Teubert, Stefan Kaufmann, Aparna Das, Eva Monroy, Martin Eickhoff, Motomu Tanaka Advanced Functional Materials 24 , 4927 (2014) DOI : 10.1002/adfm.201400388 Detection of oxidising gases using an optochemical sensor system based on GaN/InGaN nanowires Konrad Maier, Andreas Helwig, Gerhard Müller, Pascal Becker, Pascal Hille, Jörg Schörmann, Jörg Teubert, Martin Eickhoff Sensors and Actuators B: Chemical 197 , 87 (2014 ) DOI : 10.1016/j.snb.2014.02.002 Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by germanium doping P. Hille , J. Müßener , P. Becker , M. de la Mata , N. Rosemann , C. Magén , J. Arbiol , J. Teubert , S. Chatterjee , J. Schörmann , M. Eickhoff Applied Physics Letters 104 , 102104 (2014) DOI : 10.1063/1.4868411 Intraband Absorption in Self-Assembled Ge-Doped GaN/AlN Nanowire Heterostructures M. Beeler†, P. Hille, J. Schörmann, J. Teubert, M. de la Mata, J. Arbiol, M. Eickhoff, E. Monroy Nano Letters 14 , 1665 (2014) DOI : 10.1021/nl5002247 2013 Contactless electroreflectance studies of free exciton binding energy in Zn1-xMgxO epilayers M. Wełna , R. Kudrawiec , A. Kaminska , A. Kozanecki , B. Laumer , M. Eickhoff , J. Misiewicz Applied Physics Letters 103 , 251908 (2013) DOI : 10.1063/1.4851215 Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires Th. Kehagias, G. P. Dimitrakopulos, P. Becker, J. Kioseoglou, F. Furtmayr, T. Koukoula, I. Häusler, A. Chernikov, S. Chatterjee, Th. Karakostas, H.-M. Solowan, U. T. Schwarz, M. Eickhoff, Ph. Komninou Nanotechnology 24 , 435702 (2013) DOI : 10.1088/0957-4484/24/43/435702 Germanium doping of self-assembled GaN nanowires grown by plasma-assisted molecular beam epitaxy Jörg Schörmann , Pascal Hille , Markus Schäfer , Jan Müßener , Pascal Becker , Peter J. Klar , Matthias Kleine-Boymann , Marcus Rohnke , Maria de la Mata , Jordi Arbiol , Detlev M. Hofmann , Jörg Teubert , Martin Eickhoff Journal of Applied Physics 114 , 103505 (2013) DOI : 10.1063/1.4820264 InGaN/GaN quantum dots as optical probes for the electric field at the GaN/electrolyte interface J. Teubert , S. Koslowski , S. Lippert , M. Schäfer , J. Wallys , G. Dimitrakopulos , Th. Kehagias , Ph. Komninou , A. Das , E. Monroy , M. Eickhoff Journal of Applied Physics 114 , 074313 (2013) DOI : 10.1063/1.4818624 Radical formation at the gallium nitride nanowire-electrolyte interface by photoactivated charge transfer J. M. Philipps, G. M. Müntze, P. Hille, J. Wallys, J. Schörmann, J. Teubert, D. M. Hofmann, M. Eickhoff Nanotechnology 24 , 325701 (2013) DOI : 10.1088/0957-4484/24/32/325701 Accurate determination of optical bandgap and lattice parameters of Zn1-xMgxO epitaxial films (0 <= x <= 0.3) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire Bernhard Laumer, Fabian Schuster , Martin Stutzmann , Andreas Bergmaier , Günther Dollinger , Martin Eickhoff Journal of Applied Physics 113 , 233512 (2013) DOI : 10.1063/1.4811693 Bandgap engineering in a nanowire: self-assembled 0, 1 and 2D quantum structures Jordi Arbiol, Maria de la Mata, Martin Eickhoff, Anna Fontcuberta i Morral Materials Today 16 , 213 (2013) DOI : 10.1016/j.mattod.2013.06.006 Optical properties of GaN-based nanowires containing a single Al0.14Ga0.86N/GaN quantum disc G. Jacopin, L. Rigutti, J. Teubert, F. H. Julien, F. Furtmayr, Ph. Komninou, Th. Kehagias, M. Eickhoff, M. Tchernycheva Nanotechnology 24 , 125201 (2013) DOI : 10.1088/0957-4484/24/12/125201 Probing carrier populations in ZnO quantum wells by screening of the internal electric fields A. Chernikov, S. Schäfer, M. Koch, S. Chatterjee, B. Laumer, M. Eickhoff Physical Review B 87 , 035309 (2013) DOI : 10.1103/PhysRevB.87.035309 A review of MBE grown 0D, 1D and 2D quantum structures in a nanowire Maria de la Mata, Xiang Zhou, Florian Furtmayr, Jörg Teubert, Silvija Gradečak, Martin Eickhoff, Anna Fontcuberta i Morral, Jordi Arbiol Journal of Materials Chemistry C 1 , 4300 (2013) DOI : 10.1039/C3TC30556B Effects of interface geometry on the thermoelectric properties of laterally microstructured ZnO-based thin films G. Homm, F. Gather, A. Kronenberger, S. Petznick, T. Henning, M. Eickhoff, B. K. Meyer, C. Heiliger, P. J. Klar Physica Status Solidi A 210 , 119 (2013) DOI : 10.1002/pssa.201228463 2012 Bias-Enhanced Optical pH Response of Group III-Nitride Nanowires Jens Wallys, Jörg Teubert, Florian Furtmayr, Detlev M. Hofmann, Martin Eickhoff Nano Letters 12 , 6180 (2012) DOI : 10.1021/nl303021v Opto-chemical sensor system for the detection of H-2 and hydrocarbons based on InGaN/GaN nanowires Sumit Paul, Andreas Helwig, Gerhard Müller, Florian Furtmayr, Jörg Teubert, Martin Eickhoff Sensors and Actuators B - Chemical 173 , 120 (2012) DOI : 10.1016/j.snb.2012.06.022 Growth study of nonpolar Zn1-xMgxO epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy Bernhard Laumer , Fabian Schuster , Martin Stutzmann , Andreas Bergmaier , Günther Dollinger , Stephen Vogel , Katharina I. Gries , Kerstin Volz , Martin Eickhoff Applied Physics Letters 101 , 122106 (2012) DOI : 10.1063/1.4754076 Binary copper oxide semiconductors: From materials towards devices B. K. Meyer, A. Polity, D. Reppin, M. Becker, P. Hering, P. J. Klar, Th. Sander, C. Reindl, J. Benz, M. Eickhoff, C. Heiliger, M. Heinemann, J. Bläsing, A. Krost, S. Shokovets, C. Müller, C. Ronning Physica Status Solidi B 249 , 1487 (2012) DOI : 10.1002/pssb.201248128 ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers Bernhard Laumer , Fabian Schuster , Thomas A. Wassner , Martin Stutzmann , Marcus Rohnke , Jörg Schörmann , Martin Eickhoff Journal of Applied Physics 111 , 113504 (2012) DOI : 10.1063/1.4723642 Polarity Assignment in ZnTe, GaAs, ZnO, and GaN-AlN Nanowires from Direct Dumbbell Analysis Maria de la Mata, Cesar Magen, Jaume Gazquez, Muhammad Iqbal Bakti Utama, Martin Heiss, Sergei Lopatin, Florian Furtmayr, Carlos J. Fernández-Rojas, Bo Peng, Joan Ramon Morante, Riccardo Rurali, Martin Eickhoff, Anna Fontcuberta i Morral, Qihua Xiong, Jordi Arbiol Nano Letters 12 , 2579 (2012) DOI : 10.1021/nl300840q Electrochemical properties of GaN nanowire electrodes-influence of doping and control by external bias J. Wallys, S. Hoffmann, F. Furtmayr, J. Teubert, M. Eickhoff Nanotechnology 23 , 165701 (2012) DOI : 10.1088/0957-4484/23/16/165701 Phonon-assisted luminescence of polar semiconductors: Frohlich coupling versus deformation-potential scattering A. Chernikov, V. Bornwasser, M. Koch, S. Chatterjee, C. N. Böttge, T. Feldtmann, M. Kira, S. W. Koch, T. Wassner, S. Lautenschläger, B. K. Meyer, M. Eickhoff Physical Review B 85 , 035201 (2012) DOI : 10.1103/PhysRevB.85.035201 Self-assembled GaN quantum wires on GaN/AlN nanowire templates Jordi Arbiol, Cesar Magen, Pascal Becker, Gwénolé Jacopin, Alexey Chernikov, Sören Schäfer, Florian Furtmayr, Maria Tchernycheva, Lorenzo Rigutti, Jörg Teubert, Sangam Chatterjee, Joan R. Morante, Martin Eickhoff Nanoscale 4 , 7517 (2012) DOI : 10.1039/C2NR32173D 2011 Intra-excitonic relaxation dynamics in ZnO Alexej Chernikov , Martin Koch , Bernhard Laumer , Thomas A. Wassner , Martin Eickhoff , Stephan W. Koch , Sangam Chatterjee Applied Physics Letters 99 , 231910 (2011) DOI : 10.1063/1.3668102 Carrier confinement in GaN/AlxGa1−xN nanowire heterostructures (0<x≤ 1) Florian Furtmayr, Jörg Teubert, Pascal Becker, Sonia Conesa-Boj, Joan Ramon Morante, Alexey Chernikov, Sören Schäfer, Sangam Chatterjee, Jordi Arbiol, Martin Eickhoff Physical Review B 84 , 205303 (2011) DOI : 10.1103/PhysRevB.84.205303 Exciton confinement in homo- and heteroepitaxial ZnO/Zn 1 − x Mg x O quantum wells with x < 0.1 Bernhard Laumer , Thomas A. Wassner , Fabian Schuster , Martin Stutzmann , Jörg Schörmann , Marcus Rohnke , Alexej Chernikov , Verena Bornwasser , Martin Koch , Sangam Chatterjee , Martin Eickhoff Journal of Applied Physics 110 , 093513 (2011) DOI : 10.1063/1.3658020 Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires G. Jacopin , L. Rigutti , L. Largeau , F. Fortuna , F. Furtmayr , F. H. Julien , M. Eickhoff , M. Tchernycheva Journal of Applied Physics 110 , 064313 (2011) DOI : 10.1063/1.3638698 GaN nanodiscs embedded in nanowires as optochemical transducers J. Teubert, P. Becker, F. Furtmayr, M. Eickhoff Nanotechnology 22 275505 (2011) DOI : 10.1088/0957-4484/22/27/275505 Optical properties of MgZnO alloys: Excitons and exciton-phonon complexes M. D. Neumann , C. Cobet , N. Esser , B. Laumer , T. A. Wassner , M. Eickhoff , M. Feneberg , R. Goldhahn Journal of Applied Physics 110 , 013520 (2011) DOI : 10.1063/1.3606414 Carrier dynamics in (ZnMg)O alloy materials Alexej Chernikov, Swantje Horst, Martin Koch, Kerstin Volz, Sangam Chatterjee, Stephan W. Koch, Thomas A. Wassner, Bernhard Laumer, Martin Eickhoff Physica Status Solidi C 8 , 1149 (2011) DOI : 10.1002/pssc.201000859 2010 Origin of energy dispersion in Al x Ga 1−x N/GaN nanowire quantum discs with low Al content L. Rigutti, J. Teubert, G. Jacopin, F. Fortuna, M. Tchernycheva, A. De Luna Bugallo, F. H. Julien, F. Furtmayr, M. Stutzmann, M. Eickhoff Physical Review B 82 , 235308 (2010) DOI : 10.1103/PhysRevB.82.235308 Investigation of carrier dynamics in Zn 1− x Mg x O by time-resolved photoluminescence A. Chernikov, S. Horst, M. Koch, K. Volz, S. Chatterjee, S. W. Koch, T. A. Wassner, B. Laumer, M. Eickhoff Journal of Luminescence 130 , 2256 (2010) DOI : 10.1016/j.jlumin.2010.06.030 Electron spin resonance of Zn 1− x Mg x O thin films grown by plasma-assisted molecular beam epitaxy T. A. Wassner , B. Laumer , M. Althammer , S. T. B. Goennenwein , M. Stutzmann , M. Eickhoff , M. S. Brandt Applied Physics Letters 97 , 092102 (2010) DOI : 10.1063/1.3477951 Photocatalytic Cleavage of Self‐Assembled Organic Monolayers by UV‐Induced Charge Transfer from GaN Substrates John Howgate, Sebastian J. Schoell, Marco Hoeb, Wiebke Steins, Barbara Baur, Samira Hertrich, Bert Nickel, Ian D. Sharp, Martin Stutzmann, Martin Eickhoff Advanced Materials 22 , 2632 (2010) DOI : 10.1002/adma.200903756 P‐type doping of semipolar GaN(11-22) by plasma‐assisted molecular‐beam epitaxy A. Das, L. Lahourcade, J. Pernot, S. Valdueza‐Felip, P. Ruterana, A. Laufer, M. Eickhoff, E. Monroy Physica Status Solidi C 7 , 1913 (2010) DOI : 10.1002/pssc.200983618 Optical characterization of AlGaN/GaN quantum disc structures in single nanowires L. Rigutti, F. Fortuna, M. Tchernycheva, A. De Luna Bugallo, G. Jacopin, F. H. Julien, F. Furtmayr, M. Stutzmann, M. Eickhoff Physica Status Solidi C 7 , 2243 (2010) DOI : 10.1002/pssc.200983513 Photoluminescence polarization properties of single GaN nanowires containing Al x Ga 1−x N/GaN quantum discs L. Rigutti, M. Tchernycheva, A. De Luna Bugallo, G. Jacopin, F. H. Julien, F. Furtmayr, M. Stutzmann, M. Eickhoff, R. Songmuang, F. Fortuna Physical Review B 81 , 045411 (2010) DOI : 10.1103/PhysRevB.81.045411 2009 Mg doping and its effect on the semipolar GaN(112-2) growth kinetics L. Lahourcade , J. Pernot , A. Wirthmüller , M. P. Chauvat , P. Ruterana , A. Laufer , M. Eickhoff , E. Monroy Applied Physics Letters 95 , 171908 (2009) DOI : 10.1063/1.3256189 Ultrathin GaN/AlN/GaN solution-gate field effect transistor with enhanced resolution at low source-gate voltage A. Bengoechea Encabo, J. Howgate, M. Stutzmann, M. Eickhoff, M. A. Sánchez-García, Sensors and Actuators B: Chemical 142 , 304 (2009) DOI : 10.1016/j.snb.2009.07.016 Gallium nitride electrodes for membrane-based electrochemical biosensors T. Schubert, G. Steinhoff, H.-G. von Ribbeck, M. Stutzmannn, M. Eickhoff, M. Tanaka, European Physical Journal E 30 , 233 (2009) DOI : 10.1140/epje/i2009-10511-x Strain effects and phonon–plasmon coupled modes in Si‐doped AlN M. Gómez‐Gómez, A. Cros, M. Hermann, M. Stutzmann, M. Eickhoff Physica Status Solidi A 206 , 1183 (2009) DOI : 10.1002/pssa.200880852 Analysis of polarization‐dependent photoreflectance studies for c ‐plane GaN films grown on a ‐plane sapphire Marcus Röppischer, Rüdiger Goldhahn, Carsten Buchheim, Florian Furtmayr, Thomas Wassner, Martin Eickhoff, Christoph Cobet, Norbert Esser Physica Status Solidi A 206 , 773 (2009) DOI : 10.1002/pssa.200881406 Triple-twin domains in Mg doped GaN wurtzite nanowires: structural and electronic properties of this zinc-blende-like stacking Jordi Arbiol, Sònia Estradé, Joan D Prades, Albert Cirera, Florian Furtmayr, Christoph Stark, Andreas Laufer, Martin Stutzmann, Martin Eickhoff, Mhairi H Gass, Andrew L Bleloch, Francesca Peiró, Joan R Morante Nanotechnology 20 , 145704 (2009) DOI : 10.1088/0957-4484/20/14/145704 GaN quantum dots as optical transducers for chemical sensors O. Weidemann , P. K. Kandaswamy , E. Monroy , G. Jegert , M. Stutzmann , M. Eickhoff Applied Physics Letters 94 , 113108 (2009) DOI : 10.1063/1.3100301 Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy Thomas A. Wassner , Bernhard Laumer , Stefan Maier , Andreas Laufer , Bruno K. Meyer , Martin Stutzmann , Martin Eickhoff Journal of Applied Physics 105 , 023505 (2009) DOI : 10.1063/1.3065535 GaN/AlN Axial Multi Quantum Well Nanowires for Optoelectronic Devices S. Conesa-Boj, J. Arbiol, F. Furtmayr, C. Stark, S. Schäfer, M. Stutzmann, M. Eickhoff, F. Peiro, J. R. Morante Proceedings of the 2009 Spanish Conference on Electron Devices DOI : 10.1109/SCED.2009.4800430 2008 Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping Florian Furtmayr , Martin Vielemeyer , Martin Stutzmann , Jordi Arbiol, Sònia Estradé , Francesca Peirò , Joan Ramon Morante , Martin Eickhoff Journal of Applied Physics 104 , 034309 (2008) DOI : 10.1063/1.2953087 Gas sensing properties of hydrogen-terminated diamond A. Helwig, G. Müller, J. A. Garrido, M. Eickhoff Sensors and Actuators B: Chemical 133 , 156 (2008) DOI : 10.1016/j.snb.2008.02.007 Functionalization of 6 H -SiC surfaces with organosilanes S. J. Schoell , M. Hoeb , I. D. Sharp , W. Steins , M. Eickhoff , M. Stutzmann , M. S. Brandt Applied Physics Letters 92 , 153301 (2008) DOI : 10.1063/1.2908871 The Surface Conductivity at the Diamond/Aqueous Electrolyte Interface Jose A. Garrido, Andreas Härtl, Markus Dankerl, Andreas Reitinger, Martin Eickhoff, Andreas Helwig, Gerhard Müller, Martin Stutzmann Journal of the American Chemical Society 130 , 4177 (2008) DOI : 10.1021/ja078207g Field Test of Water-Steam Separators for Direct Steam Generation in Parabolic Troughs Markus Eck, Holger Schmidt, Martin Eickhoff, Tobias Hirsch Journal of Solar Energy Engineering 130 , 011002 (2007) DOI : 10.1115/1.2804619 A novel GaN‐based multiparameter sensor system for biochemical analysis B. Lübbers, G. Kittler, P. Ort, S. Linkohr, D. Wegener, B. Baur, M. Gebinoga, F. Weise, M. Eickhoff, S. Maroldt, A. Schober, O. Ambacher Physica Status Solidi C 5 , 2361 (2007) DOI : 10.1002/pssc.200778726 Optical properties of Si- and Mg-doped gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy Florian Furtmayr , Martin Vielemeyer , Martin Stutzmann , Andreas Laufer , Bruno K. Meyer , Martin Eickhoff Journal of Applied Physics 104 , 074309 (2008) DOI : 10.1063/1.2980341 2007 Dissociative Gas Sensing at Metal Oxide Surfaces Andreas Helwig, Gerhard Muller, Martin Eickhoff, Giorgio Sberveglieri IEEE Sensors Journal 7 , 1675 (2007) DOI : 10.1109/JSEN.2007.909428 Gas Sensing Interactions at Hydrogenated Diamond Surfaces Andreas Helwig, Gerhard Muller, Olaf Weidemann, Andreas Hartl, Jose Antonio Garrido, Martin Eickhoff IEEE Sensors Journal 7 , 1349 (2007) DOI : 10.1109/JSEN.2007.905019 Stark shift of interband transitions in AlN/GaN superlattices C. Buchheim , R. Goldhahn , A. T. Winzer , G. Gobsch, U. Rossow , D. Fuhrmann , A. Hangleiter, F. Furtmayr , M. Eickhoff Applied Physics Letters 90 , 241906 (2007) DOI : 10.1063/1.2748313 Selective etching of AlInN/GaN heterostructures for MEMS technology E. Sillero, D. López-Romero, F. Calle, M. Eickhoff, J. F. Carlin, N. Grandjean, M. Ilegems Microelectronic Engineering 84 , 1152 (2007) DOI : 10.1016/j.mee.2007.01.150 Modulation spectroscopy of AlGaN/GaN heterostructures: The influence of electron–hole interaction R. Goldhahn, A. T. Winzer, A. Dadgar, A. Krost, O. Weidemann, M. Eickhoff Physica Status Solidi A 204 , 447 (2007) DOI : 10.1002/pssa.200673964 GaN Quantum Dots as Optical Transducers in Field Effect Chemical Sensors O. Weidemann, G. Jegert, S. Birner, M. Stutzmann, M. Eickhoff Sensors, 2007 IEEE 1-3 , 1175 (2007) DOI : 10.1109/ICSENS.2007.4388617 Fully unstrained GaN on sacrificial AlN layers by nano‐heteroepitaxy K. Tonisch, V. Cimalla, F. Niebelschütz, H. Romanus, M. Eickhoff, O. Ambacher Physica Status Solidi C 4 , 2248 (2007) DOI : 10.1002/pssc.200674813 Fabrication of freestanding GaN microstructures using AlN sacrificial layers E. Zaus, M. Hermann, M. Stutzmann, M. Eickhoff Physica Status Solidi Rapid Research Letters 1 , R10 (2007) DOI : 10.1002/pssr.200600063 2006 Impact of silicon incorporation on the formation of structural defects in AlN M. Hermann, F. Furtmayr, F. M. Morales, O. Ambacher, M. Stutzmann , M. Eickhoff Journal of Applied Physics 100 , 113531 (2006) DOI : 10.1063/1.2363239 Direct biofunctionalization of semiconductors: A survey Martin Stutzmann, Jose Antonio Garrido, Martin Eickhoff, Martin S. Brandt Physica Status Solidi A 203 , 3424 (2006) DOI : 10.1002/pssa.200622512 Catalytic activity of enzymes immobilized on AlGaN/GaN solution gate field-effect transistors B. Baur , J. Howgate , H.-G. von Ribbeck , Y. Gawlina , V. Bandalo , G. Steinhoff , M. Stutzmann , M. Eickhoff Applied Physics Letters 89 , 183901 (2006) DOI : 10.1063/1.2369534 Nearly stress-free substrates for GaN homoepitaxy M. Hermann, D. Gogova, D. Siche, M. Schmidbauer, B. Monemar, M. Stutzmann, M. Eickhoff Journal of Crystal Growth 293 , 462 (2006) DOI : 10.1016/j.jcrysgro.2006.05.058 Erratum: Recording of cell action potentials with AlGaN/GaN field-effect transistors [Appl. Phys. Lett. 86, 033901 (2005)] Georg Steinhoff , Barbara Baur, Günter Wrobel , Sven Ingebrandt , Andreas Offenhäusser, Armin Dadgar , Alois Krost, Martin Stutzmann, Martin Eickhoff Applied Physics Letters 89 , 019901 (2006) DOI : 10.1063/1.2219129 New Materials for Chemical and Biosensors A. Lloyd Spetz, S. Nakagomi, H. Wingbrant, M. Andersson, A. Salomonsson, S. Roy, G. Wingqvist, I. Katardjiev, M. Eickhoff, K. Uvdal, R. Yakimova Materials and Manufacturing Processes 21 , 253 (2006) DOI : 10.1080/10426910500464495 Luminescence properties of highly Si-doped AlN E. Monroy, J. Zenneck, G. Cherkashinin , O. Ambacher, M. Hermann , M. Stutzmann , M. Eickhoff Applied Physics Letters 88 , 071906 (2006) DOI : 10.1063/1.2173622 Electroreflectance spectroscopy of Pt/AlGaN/GaN heterostructures exposed to gaseous hydrogen A. T. Winzer , R. Goldhahn , G. Gobsch, A. Dadgar, A. Krost, O. Weidemann , M. Stutzmann , M. Eickhoff Applied Physics Letters 88 , 024101 (2006) DOI : 10.1063/1.2161394 2005 Chemical functionalization of GaN and AlN surfaces B. Baur , G. Steinhoff , J. Hernando, O. Purrucker, M. Tanaka, B. Nickel, M. Stutzmann, M. Eickhoff Applied Physics Letters 87 , 263901 (2005) DOI : 10.1063/1.2150280 Electrochemical stabilization of crystalline silicon with aromatic self‐assembled monolayers in aqueous electrolytes Murat Tutus, Oliver Purrucker, Klaus Adlkofer, Martin Eickhoff, Motomu Tanaka Physica Status Solidi B 242 , 2838 (2005) DOI : 10.1002/pssb.200541263 Highly Si-doped AlN grown by plasma-assisted molecular-beam epitaxy M. Hermann , F. Furtmayr, A. Bergmaier, G. Dollinger, M. Stutzmann, M. Eickhoff Applied Physics Letters 86 , 192108 (2005) DOI : 10.1063/1.1923180 Determination of the polarization discontinuity at the AlGaN/GaN interface by electroreflectance spectroscopy A. T. Winzer , R. Goldhahn , G. Gobsch, A. Link, M. Eickhoff, U. Rossow , A. Hangleiter Applied Physics Letters 86 , 181912 (2005) DOI : 10.1063/1.1923748 Mn-rich clusters in GaN: Hexagonal or cubic symmetry? G. Martínez-Criado , A. Somogyi , S. Ramos, J. Campo, R. Tucoulou , M. Salome , J. Susin, M. Hermann , M. Eickhoff , M. Stutzmann Applied Physics Letters 86 , 131927 (2005) DOI : 10.1063/1.1886908 Influence of thermal oxidation on the electronic properties of Pt Schottky contacts on GaN grown by molecular-beam epitaxy O. Weidemann, E. Monroy, E. Hahn, M. Stutzmann , M. Eickhoff Applied Physics Letters 86 , 083507 (2005) DOI : 10.1063/1.1868863 Recording of cell action potentials with AlGaN/GaN field-effect transistors Georg Steinhoff , Barbara Baur, Günter Wrobel , Sven Ingebrandt , Andreas Offenhäusser, Armin Dadgar , Alois Krost, Martin Stutzmann , Martin Eickhoff Applied Physics Letters 86 , 033901 (2005) DOI : 10.1063/1.1853531 AlGaN/GaN Electrolyte-Gate Field-Effect Transistors as Transducers for Bioelectronic Devices Georg Steinhoff, Barbara Baur, Hans-Georg von Ribbeck, Günter Wrobel, Sven Ingebrandt, Andreas Offenhäusser, Martin Stutzmann, Martin Eickhoff Advances in Solid State Physics 45 , 363 (2005) DOI : 10.1007/11423256_29 Phase transition by Mg doping of N‐face polarity GaN E. Sarigiannidou, E. Monroy, M. Hermann, T. Andreev, P. Holliger, S. Monnoye, H. Mank, B. Daudin, M. Eickhoff Physica Status Solidi C 2 , 2216 (2005) DOI : 10.1002/pssc.200461429 2004 Structural and interface properties of an AlN diamond ultraviolet light emitting diode C. R. Miskys , J. A. Garrido , M. Hermann , M. Eickhoff , C. E. Nebel , M. Stutzmann, G. Vogg Applied Physics Letters 85 , 3699 (2004) DOI : 10.1063/1.1811382 Polytype transition of N-face GaN:Mg from wurtzite to zinc-blende E. Monroy, M. Hermann, E. Sarigiannidou , T. Andreev, P. Holliger, S. Monnoye , H. Mank, B. Daudin, M. Eickhoff Journal of Applied Physics 96 , 3709 (2004) DOI : 10.1063/1.1787142 Anisotropic propagation of surface acoustic waves on nitride layers J. Pedrós, F. Calle, J. Grajal, R. J. Jiménez Riobóo, C. Prieto, J. L. Pau, J. Pereiro, M. Hermann, M. Eickhoff, Z. Bougrioua Superlattices and Microstructures 36 , 815 (2004) DOI : 10.1016/j.spmi.2004.09.044 Electron injection-induced effects in Mn-doped GaN William Burdett , Olena Lopatiuk , Leonid Chernyak, Martin Hermann , Martin Stutzmann , Martin Eickhoff Journal of Applied Physics 96 , 3556 (2004) DOI : 10.1063/1.1780606 Piezoresistive properties of single crystalline, polycrystalline, and nanocrystalline n -type 3C-SiC M. Eickhoff, M. Möller, G. Kroetz, M. Stutzmann Journal of Applied Physics 96 , 2872 (2004) DOI : 10.1063/1.1775052 Influence of crystal defects on the piezoresistive properties of 3C–SiC M. Eickhoff, M. Stutzmann Journal of Applied Physics 96 , 2878 (2004) DOI : 10.1063/1.1775043 High quality heteroepitaxial AlN films on diamond G. Vogg, C. R. Miskys , J. A. Garrido , M. Hermann , M. Eickhoff , M. Stutzmann Journal of Applied Physics 96 , 895 (2004) DOI : 10.1063/1.1759088 Influence of crystal quality on the electronic properties of n -type 3C-SiC grown by low temperature low pressure chemical vapor deposition M. Eickhoff, H. Möller, J. Stoemenos, S. Zappe, G. Kroetz, M. Stutzmann Journal of Applied Physics 95 , 7908 (2004) DOI : 10.1063/1.1728311 Direct Observation of Mn Clusters in GaN by X-ray Scanning Microscopy Gema Martínez-Criado, Andrea Somogyi, Martin Hermann, Martin Eickhoff, Martin Stutzmann Japanese Journal of Applied Physics 43 , L695 (2004) DOI : 10.1143/JJAP.43.L695 Photoreflectance studies of (Al)Ga- and N-face AlGaN/GaN heterostructures C. Buchheim, A. T. Winzer, R. Goldhahn, G. Gobsch, O. Ambacher, A. Link, M. Eickhoff, M. Stutzmann Thin Solid Films 450 , 155 (2004) DOI : 10.1016/j.tsf.2003.10.062 Temperature-dependent electric fields in GaN Schottky diodes studied by electroreflectance S. Shokhovets, D. Fuhrmann, R. Goldhahn, G. Gobsch, O. Ambacher, M. Hermann, M. Eickhoff Thin Solid Films 450 , 163 (2004) DOI : 10.1016/j.tsf.2003.10.064 Improved 3C-SiC Films Epitaxially Grown on Si by Flash Lamp Processing J. Stoemenos, D. Panknin, M. Eickhoff, V. Heera, W. Skorupa Journal of the Electrochemical Society 151 , G136 (2002) DOI : 10.1149/1.1639167 2003 Al x Ga 1– x N—A New Material System for Biosensors G. Steinhoff, O. Purrucker, M. Tanaka, M. Stutzmann, M. Eickhoff Advanced Functional Materials 13 , 841 (2003) DOI : 10.1002/adfm.200304397 AlN/Diamond np-junctions Christoph E. Nebel, Claudio R. Miskys, Jose, A. Garrido, Martin Hermann, Oliver Ambacher, Martin Eickhoff, Martin Stutzmann Diamond and Related Materials 12 , 1873 (2003) DOI : 10.1016/S0925-9635(03)00313-3 Hydrosilylation of crystalline silicon (111) and hydrogenated amorphous silicon surfaces: A comparative x-ray photoelectron spectroscopy study A. Lehner , G. Steinhoff , M. S. Brandt , M. Eickhoff , M. Stutzmann Journal of Applied Physics 94 , 2289 (2003) DOI : 10.1063/1.1593223 Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes O. Weidemann , M. Hermann , G. Steinhoff, H. Wingbrant , A. Lloyd Spetz, M. Stutzmann , M. Eickhoff Applied Physics Letters 83 , 773 (2003) DOI : 10.1063/1.1593794 p H response of GaN surfaces and its application for p H-sensitive field-effect transistors G. Steinhoff , M. Hermann, W. J. Schaff , L. F. Eastman, M. Stutzmann , M. Eickhoff Applied Physics Letters 83 , 177 (2003) DOI : 10.1063/1.1589188 Exciton quenching in Pt/GaN Schottky diodes with Ga- and N-face polarity S. Shokhovets , D. Fuhrmann , R. Goldhahn , G. Gobsch, O. Ambacher, M. Hermann , U. Karrer , M. Eickhoff Applied Physics Letters 82 , 1712 (2003) DOI : 10.1063/1.1561160 AlN/diamond heterojunction diodes C. R. Miskys , J. A. Garrido , C. E. Nebel , M. Hermann , O. Ambacher , M. Eickhoff , M. Stutzmann Applied Physics Letters 82 , 290 (2003) DOI : 10.1063/1.1532545 Hydrosilylation of silicon surfaces: Crystalline versus amorphous A. Lehner, G. Steinhoff, M. S. Brandt, M. Eickhoff, M. Stutzmann Materials Research Society Symposium Proceedings 762 , 473 (2003) Electroreflectance and photoreflectance studies of electric fields in Pt/GaN Schottky diodes and AlGaN/GaN heterostructures S. Shokhovets, R. Goldhahn, G. Gobsch, O. Ambacher, I. P. Smorchkova, J. S. Speck, U. Mishra, A. Link, M. Hermann, M. Eickhoff Materials Research Society Symposium Proceedings 743 , 279 (2003) Two-dimensional charge carrier systems for chemical sensors: AlGaN/GaN and diamond M. Stutzmann, J. A. Garrido, M. Eickhoff Proceedings of the IEEE Sensors 1-2 , 1153 (2003) DOI : 10.1109/ICSENS.2003.1279125 2002 Gas sensitive GaN/AlGaN-heterostructures J. Schalwig, G. Müller, M. Eickhoff, O. Ambacher, M. Stutzmann Sensors and Actuators B: Chemical 87 , 425 (2002) DOI : 10.1016/S0925-4005(02)00292-7 Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al 0.31 Ga 0.69 N E. Monroy, F. Calle, R. Ranchal, T. Palacios, M. Verdú, F. J. Sánchez, M. T. Montojo, M. Eickhoff, F. Omnès, Z. Bougrioua, I. Moerman Semiconductor Science and Technology 17 , L47 (2002) DOI : 10.1088/0268-1242/17/9/103 Observation of ion-induced changes in the channel current of high electron mobility AlGaN/GaN transistors (HEMT) Ralph Neuberger, Gerhard Müller, Martin Eickhoff, Oliver Ambacher, Martin Stutzmann Materials Science and Engineering: B 93 , 143 (2002) DOI : 10.1016/S0921-5107(02)00053-3 Nanotechnology for SAW devices on AlN epilayers T. Palacios, F. Calle, E. Monroy, J. Grajal, M. Eickhoff, O. Ambacher, C. Prieto Materials Science and Engineering: B 93 , 154 (2002) DOI : 10.1016/S0921-5107(02)00022-3 Group III-nitride-based gas sensors for combustion monitoring J. Schalwig, G. Müller, M. Eickhoff, O. Ambacher, M. Stutzmann Materials Science and Engineering: B 93 , 207 (2002) DOI : 10.1016/S0921-5107(02)00050-8 Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, L. F. Eastman Journal of Physics: Condensed Matter 14 , 3399 (2002) DOI : 10.1088/0953-8984/14/13/302 Thermoresistive and Piezoresistive Properties of Wurtzite N–GaN S. Mingiacchi, P. Lugli, A. Bonfiglio, G. Conte, M. Eickhoff, O. Ambacher, A. Rizzi, A. Passaseo, P. Visconti, R. Cingolani Physica Status Solidi A 190 , 281 (2002) DOI : 10.1002/1521-396X(200203)190:1%3C281::AID-PSSA281%3E3.0.CO;2-U GaN-based heterostructures for sensor applications M. Stutzmann, G. Steinhoff, M. Eickhoff, O. Ambacher, C. E. Nebel, J. Schalwig, R. Neuberger, G. Müller Diamond and Related Materials 11 , 886 (2002) DOI : 10.1016/S0925-9635(02)00026-2 Hydrogen response mechanism of Pt–GaN Schottky diodes J. Schalwig , G. Müller, U. Karrer , M. Eickhoff , O. Ambacher , M. Stutzmann, L. Görgens, G. Dollinger Applied Physics Letters 80 , 1222 (2002) DOI : 10.1063/1.1450044 Group III-nitride devices for field effect based gas detection M. Eickhoff, J. Schalwig, O. Weidemann, L. Gorgens, G. Muller, M. Stutzmann IEEE Semiconducting and Semi-Insulating Materials Conference , 64 (2002) High frequency SAW devices on AlGaN: fabrication, characterization and integration with optoelectronics T. Palacios, F. Calle, J. Grajal, E. Monroy, M. Eickhoff, O. Ambacher, F. Omnes Proceedings of the IEEE Ultrasonics Symposium 1-2 , 57 (2002) Novel sensor applications of group-III nitrides M. Eickhoff, O. Ambacher, G. Steinhoff, J. Schalwig, R. Neuberger, T. Palacios, E. Monroy, F. Calle, G. Muller, M. Stutzmann Materials Research Society Symposium Proceedings 693 , 781 (2002) High-resolution XRD investigations of the strain reduction in 3C-SiC thin films grown on Si(111) substrates P. Weih, V. Cimalla, C. Forster, J. Pezoldt, T. Stauden, L. Spiess, H. Romanus, M. Hermann, M. Eickhoff, P. Masri, O. Ambacher Materials Science Forum 433-4 , 233 (2002) Electronics and sensors based on pyroelectrc AlGaN/GaN heterostructures O. Ambacher, M. Eickhoff, G. Steinhoff, M. Hermann, L. Gorgens, V. Weiss, B. Baur, M. Stutzmann, R. Neuberger, J. Schalwig, G. Muller, V. Tilak, B. Green, B. Schaff, L. F. Eastman, F. Bernardini, V. Fiorentini Electrochemical Society Series 2002 , 335 (2002) 2001 The beneficial role of flash lamp annealing on the epitaxial growth of the 3C–SiC on Si D. Panknin, J. Stoemenos, M. Eickhoff, V. Heera, M. Voelskow, W. Skorupa Applied Surface Science 184 , 377 (2001) DOI : 10.1016/S0169-4332(01)00521-9 Playing with Polarity M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. J. Schuck, R. D. Grober Physica Status Solidi B 228 , 505 (2001) DOI : 10.1002/1521-3951(200111)228:2<505::AID-PSSB505>3.0.CO;2-U Wetting Behaviour of GaN Surfaces with Ga‐ or N‐Face Polarity M. Eickhoff, R. Neuberger, G. Steinhoff, O. Ambacher, G. Müller, M. Stutzmann Physica Status Solidi B 228 , 519 (2001) DOI : 10.1002/1521-3951(200111)228:2<519::AID-PSSB519>3.0.CO;2-A Etching characteristics and mechanical properties of a-SiC:H thin films U. Schmid, M. Eickhoff, Ch. Richter, G. Krötz, D. Schmitt-Landsiedel Sensors and Actuators A: Physical 94 , 87 (2001) DOI : 10.1016/S0924-4247(01)00691-4 Piezoresistivity of Al x Ga 1−x N layers and Al x Ga 1−x N/GaN heterostructures M. Eickhoff , O. Ambacher, G. Krötz, M. Stutzmann Journal of Applied Physics 90 , 3383 (2001) DOI : 10.1063/1.1398602 A highly stable SiC based microhotplate NO 2 gas-sensor F. Solzbacher, C. Imawan, H. Steffes, E. Obermeier, M. Eickhoff Sensors and Actuators B: Chemical 78 , 216 (2001) DOI : 10.1016/S0925-4005(01)00815-2 A new SiC/HfB 2 based low power gas sensor F. Solzbacher, C. Imawan, H. Steffes, E. Obermeier, M. Eickhoff Sensors and Actuators B: Chemical 77 , 111 (2001) DOI : 10.1016/S0925-4005(01)00681-5 Oxidation Dependence on Defect Density in 3C-SiC Films M. Eickhoff, N. Vouroutzis, A. Nielsen, G. Krötz, J. Stoemenos Journal of the Electrochemical Society 148 , G336 (2001) DOI : 10.1149/1.1370972 Suppression of Si Cavities at the SiC/Si Interface during Epitaxial Growth of 3C-SiC on Silicon-on-Insulator H. Möller, G. Krötz, M. Eickhoff, A. Nielsen, V. Papaioannou, J. Stoemenos Journal of the Electrochemical Society 148 , G16 (2001) DOI : 10.1149/1.1344557 Strain and strain relaxation in SOI materials J. Camassel, N. Planes, L. Falkovski, H. Moller, M. Eickhoff, G. Krotz Electrochemical Society Series 99 , 40 (2001) Improvement of the 3C-SiC/Si interface by flash lamp annealing D. Panknin, J. Stoemenos, M. Eickhoff, V. Heera, N. Vouroutzis, G. Krötz, Wolfgang Skorupa Materials Science Forum 353 , 151 (2001) DOI : 10.4028/www.scientific.net/MSF.353-356.151 Selective Deposition of 3C-SiC Epitaxially Grown on SOI Subtrates M. Eickhoff, S. Zappe, A. Nielsen, G. Krötz, E. Obermeier, N. Vouroutzis, J. Stoemenos Materials Science Forum 353 , 175 (2001) DOI : 10.4028/www.scientific.net/MSF.353-356.175 Dependence of Wet Oxidation on the Defect Density in 3C-SiC M. Eickhoff, N. Vouroutzis, A. Nielsen, G. Krötz, J. Stoemenos Materials Science Forum 353 , 663 (2001) DOI : 10.4028/www.scientific.net/MSF.353-356.663 High Temperature 10 Bar Pressure Sensor Based on 3C-SiC/SOI for Turbine Control Applications S. Zappe, J. Franklin, E. Obermeier, M. Eickhoff, H. Möller, G. Krötz, C. Rougeot, O. Lefort, J. Stoemenos Materials Science Forum 353 , 753 (2001) DOI : 10.4028/www.scientific.net/MSF.353-356.753 2000 Structural Characteristics of 3C-SiC Films Epitaxially Grown on the Si/Si 3 N 4 /SiO 2 System S. Zappe, H. Möller, G. Krötz, M. Eickhoff, Wolfgang Skorupa, E. Obermeier, J. Stoemenos Materials Science Forum 338 , 529 (2000) DOI : 10.4028/www.scientific.net/MSF.338-342.529 SOL Thinning Effects on 3C-SiC on SOI N. Planes, H. Möller, Jean Camassel, Y. Stoimenos, L. Falkovski, M. Eickhoff, G. Krötz Materials Science Forum 338 , 301 (2000) DOI : 10.4028/www.scientific.net/MSF.338-342.301 1999 and before Heteroepitaxial growth of 3C-SiC on SOI for sensor applications G. Krötz, H. Möller, M. Eickhoff, S. Zappe, R. Ziermann, E. Obermeier, J. Stoemenos Materials Science and Engineering: B 61 , 516 (1999) DOI : 10.1016/S0921-5107(98)00464-4 The evolution of cavities in Si at the 3C-SiC/Si interface during 3C-SiC deposition by LPCVD V. Papaioannou, H. Möller, M. Rapp, L. Vogelmeier, M. Eickhoff, G. Krötz, J. Stoemenos Materials Science and Engineering: B 61 , 539 (1999) DOI : 10.1016/S0921-5107(98)00469-3 Influence of the silicon overlayer thickness of SOI unibond substrates on β-SIC heteroepitaxy H. Möller, M. Eickhoff, L. Vogelmeier, M. Rapp, G. Krötz, V. Papaioannou, J. Stoemenos Materials Science and Engineering: B 61 , 567 (1999) DOI : 10.1016/S0921-5107(98)00475-9 High temperature piezoresistive β-SiC-on-SOI pressure sensor with on chip SiC thermistor R. Ziermann, J. von Berg, E. Obermeier, F. Wischmeyer, E. Niemann, H. Möller, M. Eickhoff, G. Krötz Materials Science and Engineering: B 61 , 576 (1999) DOI : 10.1016/S0921-5107(98)00477-2 SOL thickness dependence of residual strain in SOI material J. Camassel, N. Planes, L. Falkovsky, H. Moller, M. Eickhoff, G. Krotz Electronic Letters 35 , 1284 (1999) DOI : 10.1049/el:19990868 Selective growth of high-quality 3C-SiC using a SiO 2 sacrificial-layer technique M. Eickhoff, H. Möller, M. Rapp, G. Kroetz Thin Solid Films 345 , 197 (1999) DOI : 10.1016/S0040-6090(99)00233-3 A high temperature pressure sensor prepared by selective deposition of cubic silicon carbide on SOI substrates M. Eickhoff, H. Möller, G. Kroetz, J. v. Berg, R. Ziermann Sensors and Actuators A: Physical 74 , 56 (1999) DOI : 10.1016/S0924-4247(98)00302-1 Silicon compatible materials for harsh environment sensors Gerhard H. Kroetz, Martin H. Eickhoff, Helmut Moeller Sensors and Actuators A: Physical 74 , 182 (1999) DOI : 10.1016/S0924-4247(98)00296-9 High quality β-SiC films obtained by low-temperature heteroepitaxy combined with a fast carbonization step H. Möller, M. Eickhoff, M. Rapp, H. W. Grueninger, G. Krötz, Applied Physics A 68 , 461 (1999) DOI : 10.1007/s003390050924 Measurement of the cylinder pressure in combustion engines with a piezoresistive /spl beta/-SiC-on-SOI pressure sensor J. von Berg, R. Ziermann, W. Reichert, E. Obermeier, M. Eickhoff, G. Krotz, U. Thoma, C. Cavalloni, J. P. Nendza IEEE 1998 Fourth International High Temperature Electronics Conference , 245 (1998) DOI : 10.1109/HITEC.1998.676796 High Temperature Piezoresistive β-SiC-on-SOI Pressure Sensor for Combustion Engines J. von Berg, R. Ziermann, W. Reichert, E. Obermeier, M. Eickhoff, G. Krötz, U. Thoma, Th. Boltshauser, C. Cavalloni, J. P. Nendza Materials Science Forum 264 , 1101 (1998) DOI : 10.4028/www.scientific.net/MSF.264-268.1101 Rapid plasma etching of cubic SiC using NF 3 /O 2 gas mixtures Christoph Richter, Klaus Espertshuber, Christoph Wagner, Martin Eickhoff, Gerhard Krötz Materials Science and Engineering: B 46 , 160 (1997) DOI : 10.1016/S0921-5107(96)01969-1 A high temperature pressure sensor with beta-SiC piezoresistors on SOI substrates R. Ziermann, J. von Berg, W. Reichert, E. Obermeier, M. Eickhoff, G. Krotz IEEE Transducers 1-2 , 1411 (1997) The influence of crystal quality on the piezoresistive effect of beta-SiC between RT and 450 degrees C measured by using microstructures J. Strass, M. Eickhoff, G. Kroetz IEEE Transducers 1-2 , 1439 (1997)

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