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MBE-by-Design

Sub-group leader Dr. Patrick Vogt

The 'MBE-by-Design' group (led by Dr. Patrick Vogt) focuses on the discovery and identification of novel reaction mechanisms and new compound formations in MBE. The research goal is the development of new MBE variants and the growth of functional materials with properties superior to any known. This is achieved by investigating, understanding, and modeling the reaction kinetics and thermodynamics of thin films grown by oxide and nitride MBE.  
 
The group collaborates with Cornell University (NY, USA), Penn State University (PA, USA), and Max-Planck-Institut für Eisenforschung (MPIE), for the experimental and theoretical exploration in new directions in synthesis-science.   

Short Bio: 

Patrick Vogt received his Ph.D. (with distinction) from the Paul Drude Institute, Berlin. He subsequently joined the groups of Prof. James S. Speck at UC Santa Barbara (UCSB) and Prof. Darrell G. Schlom at Cornell University where he invented new directions in MBE growth. He received the Lise Meitner Prize (Humboldt University) for his studies on oxide MBE growth kinetics and thermodynamics, has published multiple papers on new MBE growth mechanisms as well as MBE variants and holds a US patent on the recently invented suboxide MBE (S-MBE) technique.

Selected (project relevant) publications:

 

Metal-Exchange Catalysis in the Growth of Sesquioxides: Towards Heterostructures of Transparent Oxide Semiconductors

Patrick Vogt, Oliver Brandt, Henning Riechert, Jonas Lähnemann, Oliver Bierwagen

Physical Review Letters 119, 196001 (2017)

DOI: 10.1103/PhysRevLett.119.196001

 

 

Metal-oxide catalyzed epitaxy (MOCATAXY): the example of the O plasma-assisted molecular beam epitaxy of β-(AlxGa1−x)2O3/β-Ga2O3 heterostructures

Patrick Vogt, Akhil Mauze, Feng Wu, Bastien Bonef, James S. Speck

Applied Physics Express 11, 115503 (2018)

DOI: 10.7567/APEX.11.115503

 

 

Quantitative subcompound-mediated reaction model for the molecular beam epitaxy of III-VI and IV-VI thin films: Applied to Ga2O3, In2O3, and SnO2

Patrick Vogt, Oliver Bierwagen

Physical Review Materials 2, 120401(R) (2018)

DOI: 10.1103/PhysRevMaterials.2.120401

 

 

Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy

Patrick Vogt, Felix V. E. Hensling, Kathy Azizie, Celesta S. Chang, David Turner, Jisung Park, Jonathan P. McCandless, Hanjong Paik, Brandon J. Bocklund, Georg Hoffman, Oliver Bierwagen, Debdeep Jena, Huili G. Xing, Shin Mou, David A. Muller, Shun-Li Shang, Zi-Kui Liu, Darrell G. Schlom

APL Materials 9, 031101 (2021)

DOI: https://doi.org/10.1063/5.0035469