Sub-group leader Dr. Patrick Vogt
The 'MBE-by-Design' group (led by Dr. Patrick Vogt) focuses on the discovery and identification of novel reaction mechanisms and new compound formations in MBE. The research goal is the development of new MBE variants and the growth of functional materials with properties superior to any known. This is achieved by investigating, understanding, and modeling the reaction kinetics and thermodynamics of thin films grown by oxide and nitride MBE.
The group collaborates with Cornell University (NY, USA), Penn State University (PA, USA), and Max-Planck-Institut für Eisenforschung (MPIE), for the experimental and theoretical exploration in new directions in synthesis-science.
Patrick Vogt received his Ph.D. (with distinction) from the Paul Drude Institute, Berlin. He subsequently joined the groups of Prof. James S. Speck at UC Santa Barbara (UCSB) and Prof. Darrell G. Schlom at Cornell University where he invented new directions in MBE growth. He received the Lise Meitner Prize (Humboldt University) for his studies on oxide MBE growth kinetics and thermodynamics, has published multiple papers on new MBE growth mechanisms as well as MBE variants and holds a US patent on the recently invented suboxide MBE (S-MBE) technique.
Selected (project relevant) publications:
Metal-Exchange Catalysis in the Growth of Sesquioxides: Towards Heterostructures of Transparent Oxide Semiconductors
Patrick Vogt, Oliver Brandt, Henning Riechert, Jonas Lähnemann, Oliver Bierwagen
Physical Review Letters 119, 196001 (2017)
Metal-oxide catalyzed epitaxy (MOCATAXY): the example of the O plasma-assisted molecular beam epitaxy of β-(AlxGa1−x)2O3/β-Ga2O3 heterostructures
Patrick Vogt, Akhil Mauze, Feng Wu, Bastien Bonef, James S. Speck
Applied Physics Express 11, 115503 (2018)
Quantitative subcompound-mediated reaction model for the molecular beam epitaxy of III-VI and IV-VI thin films: Applied to Ga2O3, In2O3, and SnO2
Patrick Vogt, Oliver Bierwagen
Physical Review Materials 2, 120401(R) (2018)
Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy
Patrick Vogt, Felix V. E. Hensling, Kathy Azizie, Celesta S. Chang, David Turner, Jisung Park, Jonathan P. McCandless, Hanjong Paik, Brandon J. Bocklund, Georg Hoffman, Oliver Bierwagen, Debdeep Jena, Huili G. Xing, Shin Mou, David A. Muller, Shun-Li Shang, Zi-Kui Liu, Darrell G. Schlom
APL Materials 9, 031101 (2021)