Publikationen AG Eickhoff
doping of β-Ga 2 O 3 by molecular beam epitaxy J. P. McCandless, V. Protasenko, B. W. Morell, E. Steinbrunner, A. T. Neal, N. Tanen, Y. Cho, T. J. Asel, S. Mou, P. Vogt, H. G. Xing, D. Jena Appl. Phys. Lett [...] of the Fermi level energy on the adsorption of O-2 to monolayer MoS 2 Philip Klement, Christina Steinke, Sangam Chatterjee, Tim O. Wehling, Martin Eickhoff 2D Materials 5 , 045025 (2018) DOI : 10.1088 [...] UV‐Induced Charge Transfer from GaN Substrates John Howgate, Sebastian J. Schoell, Marco Hoeb, Wiebke Steins, Barbara Baur, Samira Hertrich, Bert Nickel, Ian D. Sharp, Martin Stutzmann, Martin Eickhoff Advanced