Veröffentlichungen
Devices & Systems, 8:3(168 - 175) Nando Kaminski and Oliver Hilt, SiC and GaN devices - wide bandgap is not all the same (2014), in: IET - Circuits, Devices & Systems, 8:3(227 - 236) Christian Zorn and Nando [...] Europe), 2019. Felix Hoffmann, Victor Soler, Andrei Mihaila and Nando Kaminski, Power Cycling Test on 3.3kV SiC MOSFETs and the Effects of Bipolar Degradation on the Temperature Estimation by VSD-Method , in [...] Effekte, Universität Bremen, IALB, 2019 2018 2018 C. Zorn, F. Hoffmann, M. Hanf, N. Kaminski, F. Allerstam, A. Konstantinov, T. Neyer, “H³TRB Test on 650 V SiC JBS Diodes“, Proc. of ICSCRM’17, Washington DC