Publikationen AG Eickhoff
516 (1999) DOI : 10.1016/S0921-5107(98)00464-4 The evolution of cavities in Si at the 3C-SiC/Si interface during 3C-SiC deposition by LPCVD V. Papaioannou, H. Möller, M. Rapp, L. Vogelmeier, M. Eickhoff [...] B. K. Meyer, A. Polity, D. Reppin, M. Becker, P. Hering, P. J. Klar, Th. Sander, C. Reindl, J. Benz, M. Eickhoff, C. Heiliger, M. Heinemann, J. Bläsing, A. Krost, S. Shokovets, C. Müller, C. Ronning Physica [...] Morante, Martin Eickhoff Nanoscale 4 , 7517 (2012) DOI : 10.1039/C2NR32173D 2011 Intra-excitonic relaxation dynamics in ZnO Alexej Chernikov , Martin Koch , Bernhard Laumer , Thomas A. Wassner , Martin Eickhoff