Veröffentlichungen
Europe), 2019. Felix Hoffmann, Victor Soler, Andrei Mihaila and Nando Kaminski, Power Cycling Test on 3.3kV SiC MOSFETs and the Effects of Bipolar Degradation on the Temperature Estimation by VSD-Method , in [...] (Europe), Nuremberg, pp. 470‑476, June 2018 M. Hanf, C. Zorn, N. Kaminski, M. Domeij, F. Allerstam, B. Buono, J. Franchi, T. Neyer, “H³TRB Test on 1.2 kV SiC MOSFETs”, Proceedings of PCIM’18 (Europe), Nuremberg [...] Circuits, Devices & Systems, 8:3(168 - 175) Nando Kaminski and Oliver Hilt, SiC and GaN devices - wide bandgap is not all the same (2014), in: IET - Circuits, Devices & Systems, 8:3(227 - 236) Christian Zorn