Veröffentlichungen
924, pp. 581-584, 2018 C. Bödeker, E. Ayerbe, N. Kaminski, “Impact of a Kelvin Source Connection on Discrete High Power SiC-MOSFETs“, Proc. of ICSCRM’17, Washington DC, Mat. Sci. Forum, vol. 924, pp. 723-726 [...] Mat. Sci. Forum, vol. 924, pp. 805-810, 2018 C. Bödeker, M. Adelmund, N. Kaminski, “The M-Shunt Structure Applied to Printed Circuit Boards“, Proceedings of CIPS’18, Stuttgart, pp. 446-451, March 2018 F. [...] Nuremberg, pp. 470‑476, June 2018 M. Hanf, C. Zorn, N. Kaminski, M. Domeij, F. Allerstam, B. Buono, J. Franchi, T. Neyer, “H³TRB Test on 1.2 kV SiC MOSFETs”, Proceedings of PCIM’18 (Europe), Nuremberg, pp. 1506‑1511