Publikationen
relaxation in Bi mediated Ge epitaxy on Si(111) J. Falta, Th. Schmidt, G. Materlik, J. Zeysing, G. Falkenberg and R.L. Johnson, Appl. Surf. Sci., 162-163 (2000) 256 Initial stage of the Bi surfactant mediated [...] growth of Ge on Si(111): A structural study Th. Schmidt, J. Falta, G. Materlik, J. Zeysing, G. Falkenberg and R.L. Johnson, Appl. Surf. Sci., 166 (2000) 399 X-ray interface characterization of buried InAs [...] Perfect surfactant for Ge growth on Si(111)? Th. Schmidt, J. Falta, G. Materlik, J. Zeysing, G. Falkenberg and R.L. Johnson, Appl. Phys. Lett. 74(10) (1999) 1391 [Download] X-ray photon stimulated desorption