Publikationen AG Eickhoff
1002/pssa.202100669 Enhanced epitaxial growth of Ga 2 O 3 using an ultrathin SnO 2 layer A. Karg, M. Kracht, P. Vogt, A. Messow, N. Braud, J. Schörmann, M. Rohnke, J. Janek, J. Falta, M. Eickhoff Journal of [...] Properties of Metastable (01(1)over-bar2) α -Ga 2 O 3 Grown by Plasma-Assisted Molecular Beam Epitaxy M. Kracht, A. Karg, M. Feneberg, J. Bläsing, J. Schörmann, R. Goldhahn, M. Eickhoff Physical Review Applied [...] (2017) DOI : 10.1063/1.5000115 Tin-Assisted Synthesis of ε−Ga 2 O 3 by Molecular Beam Epitaxy M. Kracht, A. Karg, J. Schörmann, M. Weinhold, D. Zink, F. Michel, M. Rohnke, M. Schowalter, B. Gerken, A.