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gallium nitride (GaN) is an attractive material for next-generation power devices, especially in the automotive sector. In comparison to the already industrialized GaN high electron mobility transistors (HEMTs) [...] (MOSFETs) are better suited to achieve the high power densities and breakdown voltages required for automotive applications. After the previous dissertation focused on the gate dielectric breakdown behaviour
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gallium nitride (GaN) is an attractive material for next-generation power devices, especially in the automotive sector. In comparison to the already industrialized GaN high electron mobility transistors (HEMTs) [...] (MOSFETs) are better suited to achieve the high power densities and breakdown voltages required for automotive applications. After the previous work focused on the gate dielectric breakdown behaviour in the
of electronic gears aims to further optimise the electrical performance of the XS Cross Hybrid automotive inverter by operating only the necessary switch (Si IGBT or SiC MOSFET) depending on different