Publikationen AG Eickhoff
Ambacher, M. Hermann , U. Karrer , M. Eickhoff Applied Physics Letters 82 , 1712 (2003) DOI : 10.1063/1.1561160 AlN/diamond heterojunction diodes C. R. Miskys , J. A. Garrido , C. E. Nebel , M. Hermann , O. Ambacher [...] 1-x Strain effects and phonon–plasmon coupled modes in Si‐doped AlN M. Gómez‐Gómez, A. Cros, M. Hermann, M. Stutzmann, M. Eickhoff Physica Status Solidi A 206 , 1183 (2009) DOI : 10.1002/pssa.200880852 [...] 200674813 Fabrication of freestanding GaN microstructures using AlN sacrificial layers E. Zaus, M. Hermann, M. Stutzmann, M. Eickhoff Physica Status Solidi Rapid Research Letters 1 , R10 (2007) DOI : 10.1002/pssr